CCPAK1212 Packaging to Further Enhance Nexperia's Power MOSFET Performance - 산업 동향 | Heisener Electronics
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CCPAK1212 Packaging to Further Enhance Nexperia's Power MOSFET Performance

에 게시 12월 16, 2024

Nexperia has launched 16 new 80V and 100V power MOSFETs with an innovative copper clip CCPA12 packaging design, offering industry-leading power density, high current handling, low parasitic inductance, and excellent thermal performance. These devices are ideal for motor control, power supplies, renewable energy systems, and other high-power applications. The series also includes application-specific MOSFETs (ASFETs) for AI server hot-swapping. The CCPA12 package provides both top and bottom heat dissipation options, and all devices are JEDEC registered with interactive datasheets for easy integration.

The benchmark device, PSMN1R0-100ASF, is a 100V power MOSFET with a low on-resistance of 0.99 mΩ, capable of handling 460 A of current and dissipating up to 1.55 kW of power, all in a compact 12mm×12mm circuit board space. The top-side cooling version, PSMN1R0-100CSF, offers similar performance.

The exceptional performance of these devices is closely related to their internal structure. In the CCPA12 package, "CC" stands for Copper Clip, meaning the power MOSFET's die is sandwiched between two copper clips, one acting as a drain heat sink and the other as a source clip. This optimized design eliminates the need for wire bonding, which lowers conduction resistance and parasitic inductance, improving the maximum rated current and thermal performance.

The CCPA12 NextPower 80/100V MOSFETs are suitable for high-efficiency, high-reliability power-hungry industrial applications such as brushless DC (BLDC) motor control, switch-mode power supplies (SMPS), battery management systems (BMS), and renewable energy storage. These large-power MOSFETs in a single package reduce the need for parallel components, simplifying designs and providing more compact, cost-effective solutions.

Nexperia’s new CCPA12 series also includes MOSFETs (ASFETs) specifically designed for AI server hot-swap operations. These devices feature enhanced Safe Operating Area (SOA), ensuring excellent thermal stability during linear mode transitions.

The devices offer both top and bottom heat dissipation options, providing engineers with flexibility in thermal management, particularly in designs where direct PCB cooling is not possible due to certain thermally-sensitive components.

Chris Boyce, General Manager of Nexperia’s Product Division, commented: "Despite our market-leading performance, we know that some customers may hesitate to design with relatively new packages. To address this, we have registered the CCPA12 package with the JEDEC standards organization, reference number MO-359. We applied the same approach when launching the first LFPAK MOSFET package, and now there are many compatible devices on the market. When innovation delivers true value to customers, the market responds quickly."

All new CCPA12 MOSFET devices are supported by a suite of advanced design tools, including thermal compensation simulation models. Nexperia has also upgraded traditional PDF datasheets to user-friendly interactive datasheets, with a new "graph-to-csv" feature that allows engineers to download, analyze, and interpret the data behind each device’s key characteristics. This not only simplifies the design process but also boosts confidence in design choices.

Nexperia plans to extend the CCPA12 packaging to power MOSFETs across all voltage ranges and its AEC-Q101-compliant product portfolio, ensuring ultra-high current handling and exceptional thermal performance to meet the evolving demands of next-generation systems.