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Alpha & Omega Semiconductor Inc. |
IGBT 650V 15A TO263
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 30A
- Current - Collector Pulsed (Icm): 45A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
- Power - Max: 214W
- Switching Energy: 290µJ (on), 200µJ (off)
- Input Type: Standard
- Gate Charge: 32nC
- Td (on/off) @ 25°C: 13ns/116ns
- Test Condition: 400V, 15A, 20 Ohm, 15V
- Reverse Recovery Time (trr): 317ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
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패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고5,328 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
- Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (3x3)
- Package / Case: 8-VDFN Exposed Pad
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패키지: 8-VDFN Exposed Pad |
재고3,984 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 17A TO251A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1187pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251A
- Package / Case: TO-251-3 Stub Leads, IPak
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패키지: TO-251-3 Stub Leads, IPak |
재고7,584 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 80V 15A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 40V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta), 333W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고3,056 |
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Alpha & Omega Semiconductor Inc. |
MOSFET NCH 100V 105A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6775pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta), 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고6,016 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V 3A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 41W (Tc)
- Rds On (Max) @ Id, Vgs: 94 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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패키지: TO-220-3 Full Pack |
재고7,184 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 900V 4A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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패키지: TO-220-3 Full Pack |
재고3,792 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N CH 400V 2.6A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 Ohm @ 1A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고208,104 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N CH 30V 10A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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패키지: 8-SOIC (0.154", 3.90mm Width) |
재고620,172 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 42A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1.92W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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패키지: TO-220-3 |
재고38,004 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 140A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta), 330W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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패키지: TO-220-3 |
재고402,180 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V 52A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2388pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 7.4W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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패키지: 8-PowerSMD, Flat Leads |
재고3,472 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH DUAL DFN
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-DFN (2x5)
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패키지: 6-WDFN Exposed Pad |
재고134,220 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 30V 6A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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패키지: 8-SOIC (0.154", 3.90mm Width) |
재고2,000 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 30V 6A 8-SOIC
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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패키지: - |
재고6,192 |
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Alpha & Omega Semiconductor Inc. |
IC REG BUCK DFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 18V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 18V
- Current - Output: 3A
- Frequency - Switching: 500kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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패키지: - |
재고3,136 |
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Alpha & Omega Semiconductor Inc. |
IC REGULATOR BUCK SOIC
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 16V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 16V
- Current - Output: 3A
- Frequency - Switching: 500kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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패키지: 8-SOIC (0.154", 3.90mm Width) |
재고4,080 |
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Alpha & Omega Semiconductor Inc. |
IC REG BUCK ADJ 4A SYNC 24QFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 2.7V
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 5.5V
- Current - Output: 4A
- Frequency - Switching: 500kHz, 1MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-WFQFN Exposed Pad
- Supplier Device Package: 24-QFN (4x4)
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패키지: 24-WFQFN Exposed Pad |
재고7,136 |
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Alpha & Omega Semiconductor Inc. |
5-16V HIGH CURRENT LSW
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 12V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 6A
- Rds On (Typ): 23 mOhm
- Input Type: Non-Inverting
- Features: Slew Rate Controlled, Status Flag
- Fault Protection: Over Temperature, UVLO
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 12-WFDFN Exposed Pad
- Supplier Device Package: 12-DFN (3x3)
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패키지: 12-WFDFN Exposed Pad |
재고3,984 |
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Alpha & Omega Semiconductor Inc. |
IC USB 2.0 SWITCH 16QFN
- Switch Circuit: DPDT
- Multiplexer/Demultiplexer Circuit: 2:2
- Number of Circuits: 2
- On-State Resistance (Max): 400mOhm
- Channel-to-Channel Matching (ΔRon): 30mOhm
- Voltage - Supply, Single (V+): 1.65V ~ 4.3V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 60ns, 40ns
- -3db Bandwidth: 55MHz
- Charge Injection: 22pC
- Channel Capacitance (CS(off), CD(off)): 16pF
- Current - Leakage (IS(off)) (Max): 50nA
- Crosstalk: -70dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-WFQFN Exposed Pad
- Supplier Device Package: 16-QFN (3x3)
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패키지: 16-WFQFN Exposed Pad |
재고3,472 |
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Alpha & Omega Semiconductor Inc. |
POWER IC ECPOWER
- Switch Type: USB Switch
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 3.4V ~ 23V
- Voltage - Supply (Vcc/Vdd): 3.4V ~ 23V
- Current - Output (Max): 6A
- Rds On (Typ): 17.8mOhm
- Input Type: Non-Inverting
- Features: Status Flag
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 12-VFDFN Exposed Pad
- Supplier Device Package: 12-DFN (3x3)
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패키지: 12-VFDFN Exposed Pad |
재고7,808 |
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Alpha & Omega Semiconductor Inc. |
30V N-CHANNEL MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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패키지: - |
재고6,444 |
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Alpha & Omega Semiconductor Inc. |
5V/3A ECPOWER PROTECTION SWITCH
- Switch Type: USB Switch
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 3.4V ~ 5.5V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3.5A
- Rds On (Typ): 39mOhm
- Input Type: Non-Inverting
- Features: Latch Function, Status Flag
- Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 12-VFDFN Exposed Pad
- Supplier Device Package: 12-DFN (3x3)
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패키지: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
25V/65A DRMOS SMOD EN CONTROL TH
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive, Capacitive
- Technology: DrMOS
- Rds On (Typ): -
- Current - Output / Channel: 65A
- Current - Peak Output: 120A
- Voltage - Supply: 4.5V ~ 5.5V
- Voltage - Load: 4.5V ~ 25V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection: Over Temperature, Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: 31-PowerVFQFN Module
- Supplier Device Package: 31-QFN (5x5)
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패키지: - |
재고8,916 |
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Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 16700 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 10W (Ta), 428W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLLA
- Package / Case: 8-PowerSFN
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패키지: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
IGBT 60A
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
- Power - Max: 74 W
- Switching Energy: 2.36mJ (on), 1.17mJ (off)
- Input Type: Standard
- Gate Charge: 84 nC
- Td (on/off) @ 25°C: 35ns/168ns
- Test Condition: 400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr): 318 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF
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패키지: - |
Request a Quote |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 5A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 63mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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