페이지 26 - Diodes Incorporated 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Diodes Incorporated 제품 - 다이오드 - 정류기 - 단일

기록 2,626
페이지  26/94
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
BAT54Q-7-F
Diodes Incorporated

DIODE SCHOTT 30V 200MA SOT23 3K

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
재고36,000
30 V
200mA
800 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
-65°C ~ 150°C
B130-13-F-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
30 V
1A
500 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 30 V
110pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
SDT10A45P5-7
Diodes Incorporated

DIODE SCHOTTKY 45V 10A PDI5 1.5K

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI™ 5
  • Supplier Device Package: PowerDI™ 5
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고3,075
45 V
10A
470 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 45 V
-
Surface Mount
PowerDI™ 5
PowerDI™ 5
-55°C ~ 150°C
DFLS1100-7-G
Diodes Incorporated

DIODE SCHOTTKY 100V 1A PWRDI123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 350 nA @ 100 V
  • Capacitance @ Vr, F: 36pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI®123
  • Supplier Device Package: PowerDI™ 123
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
100 V
1A
770 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
350 nA @ 100 V
36pF @ 5V, 1MHz
Surface Mount
POWERDI®123
PowerDI™ 123
-55°C ~ 175°C
FES2DE-7
Diodes Incorporated

DIODE GEN PURP 200V 2A F1A T&R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 32pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AA
  • Supplier Device Package: F1A (DO219AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
200 V
2A
920 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
5 µA @ 200 V
32pF @ 4V, 1MHz
Surface Mount
DO-219AA
F1A (DO219AA)
-55°C ~ 150°C
UG1003_HF
Diodes Incorporated

DIODE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
200 V
1A
1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 200 V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
BAS521Q-13-2462
Diodes Incorporated

DIODE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 150 nA @ 250 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
300 V
250mA
1.1 V @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
150 nA @ 250 V
5pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
-65°C ~ 150°C
SD101CW-7-F-79
Diodes Incorporated

DIODE SCHOTTKY 40V 15MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 15mA
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 30 V
  • Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: -
Request a Quote
40 V
15mA
900 mV @ 15 mA
Small Signal =< 200mA (Io), Any Speed
1 ns
200 nA @ 30 V
2.2pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 125°C
S1MWFM-7
Diodes Incorporated

DIODE GEN PURP 1KV 1A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고6,708
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
3 µs
5 µA @ 1000 V
4pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 150°C
PD3S220L-7-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 160 µA @ 20 V
  • Capacitance @ Vr, F: 46pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI™ 323
  • Supplier Device Package: PowerDI™ 323
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: -
Request a Quote
20 V
2A
490 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
160 µA @ 20 V
46pF @ 10V, 1MHz
Surface Mount
PowerDI™ 323
PowerDI™ 323
-65°C ~ 125°C
SBR12E45LH1-13R
Diodes Incorporated

DIODE SBR 45V 12A POWERDI5SP

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 12 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI™ 5SP
  • Supplier Device Package: PowerDI5SP™
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
45 V
12A
520 mV @ 12 A
Standard Recovery >500ns, > 200mA (Io)
-
300 µA @ 45 V
-
Surface Mount
PowerDI™ 5SP
PowerDI5SP™
-65°C ~ 150°C
UG1007_HF-A52
Diodes Incorporated

ULTRAFAST RECOVERY RECTIFIER DO-

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1 kV
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
1000 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 1 kV
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
DTH8E06FP
Diodes Incorporated

DIODE GEN PURP 600V 8A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC (Type WX)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고129
600 V
8A
2.9 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
30 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC (Type WX)
-55°C ~ 175°C
SDT15H50P5-7
Diodes Incorporated

DIODE SCHOTT 50V 15A PDI5 1 .5K

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI™ 5
  • Supplier Device Package: PowerDI™ 5
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고4,500
50 V
15A
470 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 50 V
-
Surface Mount
PowerDI™ 5
PowerDI™ 5
-55°C ~ 150°C
1N5404-A
Diodes Incorporated

DIODE GPP 3A DO-201AD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
PD3S130H-7-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI™ 323
  • Supplier Device Package: PowerDI™ 323
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
30 V
1A
450 mV @ 700 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
40pF @ 10V, 1MHz
Surface Mount
PowerDI™ 323
PowerDI™ 323
-65°C ~ 150°C
PDS340-13-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI™ 5
  • Supplier Device Package: PowerDI™ 5
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
40 V
3A
490 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
-
Surface Mount
PowerDI™ 5
PowerDI™ 5
-65°C ~ 150°C
B350CE-13
Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 50 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
50 V
3A
650 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 50 V
110pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 150°C
ZHCS350TA-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 350mA
  • Voltage - Forward (Vf) (Max) @ If: 810 mV @ 350 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.6 ns
  • Current - Reverse Leakage @ Vr: 12 µA @ 30 V
  • Capacitance @ Vr, F: 3.3pF @ 25V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: 125°C
패키지: -
Request a Quote
40 V
350mA
810 mV @ 350 mA
Fast Recovery =< 500ns, > 200mA (Io)
1.6 ns
12 µA @ 30 V
3.3pF @ 25V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
125°C
MURS160Q-13-F
Diodes Incorporated

DIODE GEN PURP 600V 1A SMB TR 3K

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고8,970
600 V
1A
1.25 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 600 V
10pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
S1B-13-G
Diodes Incorporated

DIODE GENERAL PURPOSE SMA

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SBRFP2M60P1Q-7
Diodes Incorporated

SUPER BARRIER RECTIFIER PDI123 T

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 ns
  • Current - Reverse Leakage @ Vr: 12 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI®123
  • Supplier Device Package: PowerDI™ 123
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
60 V
2A
580 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
15 ns
12 µA @ 60 V
-
Surface Mount
POWERDI®123
PowerDI™ 123
-55°C ~ 175°C
1N5408-A
Diodes Incorporated

MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1 kV
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
1000 V
3A
1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1 kV
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
BAT1000-7-F-79
Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOT23-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 12 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 175pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: -
Request a Quote
40 V
1A
500 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
12 ns
100 µA @ 30 V
175pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
-40°C ~ 125°C
DTH1506D
Diodes Incorporated

FRED GPP RECTIFIER TO220AC TUBE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 45 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO220AC (Type WX)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고150
600 V
15A
2.9 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
45 µA @ 600 V
-
Through Hole
TO-220-2
TO220AC (Type WX)
-55°C ~ 150°C
MURS460C
Diodes Incorporated

DIODE GEN PURP 600V 4A SMC TR 3K

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고16,842
600 V
4A
1.28 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 600 V
40pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 150°C
DFLS260-7-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: 67pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI®123
  • Supplier Device Package: PowerDI™ 123
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
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60 V
2A
620 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
67pF @ 10V, 1MHz
Surface Mount
POWERDI®123
PowerDI™ 123
-65°C ~ 150°C
DTH810FP
Diodes Incorporated

DIODE GEN PURP 1KV 8A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC (Type WX)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고135
1000 V
8A
2 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
5 µA @ 1000 V
40pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC (Type WX)
-55°C ~ 150°C