Diodes Incorporated 제품

DMN1019USN-7

Diodes Incorporated

MOSFET N-CH 12V 9.3A SC59

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
• Vgs(th) (Max) @ Id: 800mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50.6nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 2426pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 680mW (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 9.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-59
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

DMP3099L-7

Diodes Incorporated

MOSFET P-CH 30V SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.08W (Ta)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

DMC4029SK4-13

Diodes Incorporated

MOSFET N/P-CH 40V 8.3A TO252

• FET Type: N and P-Channel Complementary
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 8.3A
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
• Power - Max: 1.5W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: TO-252-4L

패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD

DMP2200UDW-13

Diodes Incorporated

MOSFET 2P-CH 20V 0.9A SOT363

• FET Type: 2 P-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 900mA
• Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
• Power - Max: 450mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

FMMT555TA

Diodes Incorporated

TRANS PNP 150V 1A SOT23-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
• Power - Max: 500mW
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

AZ23C3V6-7

Diodes Incorporated

DIODE ZENER ARRAY 3.6V SOT23-3

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

MBR5200VPB-E1

Diodes Incorporated

DIODE SCHOTTKY 200V 5A DO27

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-27
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AA, DO-27, Axial

MBR20H100CT-G1

Diodes Incorporated

DIODE ARRAY SCHOTTKY 100V TO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4.5µA @ 100V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

패키지: TO-220-3

GBU406

Diodes Incorporated

RECT BRIDGE GPP 4A 600V GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

패키지: 4-SIP, GBU

ZRC250A02STZ

Diodes Incorporated

IC VREF SHUNT 2.5V TO92-3

• Reference Type: Shunt
• Output Type: Fixed
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Current - Output: 5mA
• Tolerance: ±2%
• Temperature Coefficient: 90ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: 60µVrms
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 20µA
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

PT8A3307HWE

Diodes Incorporated

HEATER CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

DRDNB21D-7

Diodes Incorporated

ARRAY DUAL RLY DVR SOT-363

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: Bipolar
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 100mA
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

ZXLD1350ET5TA

Diodes Incorporated

IC LED DRIVER RGLTR DIM TSOT23-5

• Type: DC DC Regulator
• Topology: Step-Down (Buck)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 7V
• Voltage - Supply (Max): 30V
• Voltage - Output: 30V
• Current - Output / Channel: 350mA
• Frequency: 1MHz
• Dimming: PWM
• Applications: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-5 Thin, TSOT-23-5
• Supplier Device Package: TSOT-23-5

패키지: SOT-23-5 Thin, TSOT-23-5

AP9214L-AK-HSBR-7

Diodes Incorporated

IC BATT PROT LI-ION U-DFN2535

• Function: Battery Protection
• Battery Chemistry: Lithium-Ion/Polymer
• Number of Cells: 1
• Fault Protection: Over Current, Over Voltage, Short Circuit
• Interface: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2535-6

패키지: 6-UDFN Exposed Pad

74LVC244AT20-13

Diodes Incorporated

IC BUFF/DVR TRI-ST DUAL 20TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

패키지: 20-TSSOP (0.173", 4.40mm Width)

PT8A2647PE

Diodes Incorporated

PIR CONTROLLER PDIP-16

• Type: Infrared (IR)
• Input Type: -
• Output Type: -
• Interface: -
• Current - Supply: 120µA
• Operating Temperature: -20°C ~ 70°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PI5A100WE

Diodes Incorporated

IC SWITCH QUAD SPDT 16SOIC

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 4
• On-State Resistance (Max): 10 Ohm
• Channel-to-Channel Matching (ΔRon): 800 mOhm
• Voltage - Supply, Single (V+): 2 V ~ 6 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 15ns, 7ns
• -3db Bandwidth: 230MHz
• Charge Injection: 10pC (Max)
• Channel Capacitance (CS(off), CD(off)): 8pF, 14pF
• Current - Leakage (IS(off)) (Max): 10µA (Typ)
• Crosstalk: -100dB @ 10MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

SMBJ10CA-13

Diodes Incorporated

TVS DIODE 10VWM 17VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 17V
• Current - Peak Pulse (10/1000µs): 35.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB

패키지: DO-214AA, SMB

SMCJ54CA-13-F

Diodes Incorporated

TVS DIODE 54VWM 87.1VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 54V
• Voltage - Breakdown (Min): 60V
• Voltage - Clamping (Max) @ Ipp: 87.1V
• Current - Peak Pulse (10/1000µs): 17.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC

패키지: DO-214AB, SMC

D5V0F4U6SO-7

Diodes Incorporated

TVS DIODE 5.5VWM 12VC SOT26

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5.5V (Max)
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 3A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: Yes
• Applications: HDMI
• Capacitance @ Frequency: 0.5pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

패키지: SOT-23-6

MMBZ6V2AL-7-F

Diodes Incorporated

TVS DIODE 3VWM 8.7VC SOT23-3

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 3V
• Voltage - Breakdown (Min): 5.89V
• Voltage - Clamping (Max) @ Ipp: 8.7V
• Current - Peak Pulse (10/1000µs): 2.76A
• Power - Peak Pulse: 24W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

PI3EQX10904ZHE

Diodes Incorporated

IC REDRIVER ETHERNET 42TQFN

• Type: Buffer, ReDriver
• Applications: Ethernet
• Input: CML
• Output: CML
• Data Rate (Max): 10Gbps
• Number of Channels: 4
• Delay Time: -
• Signal Conditioning: Input Equalization
• Capacitance - Input: -
• Voltage - Supply: 3.3V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: -
• Package / Case: 42-VFQFN Exposed Pad
• Supplier Device Package: 42-TQFN (9x3.5)

패키지: 42-VFQFN Exposed Pad

AP9101CAK-BOTRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT25

• Function: Battery Protection
• Battery Chemistry: Lithium Ion/Polymer
• Number of Cells: 1
• Fault Protection: Over Current, Over Voltage
• Interface: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

패키지: SC-74A, SOT-753

HBS810-13

Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE HBS T&R

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 8 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: HBS

패키지: -

DMN1019USNQ-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V SC59 T&R 3K

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12 V
• Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 800mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 680mW (Ta)
• Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-59-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: -

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GBP410

Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE GBP TUB

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 4 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBP
• Supplier Device Package: GBP

패키지: -

DMTH48M3SFVWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
• Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI3333-8 (SWP) Type UX
• Package / Case: 8-PowerVDFN

패키지: -

DMP21D1UT-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 260mW (Ta)
• Rds On (Max) @ Id, Vgs: 710mOhm @ 400mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-523
• Package / Case: SOT-523

패키지: -

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