Diodes Incorporated 제품

DMP3012LPS-13

Diodes Incorporated

MOSFET P-CH 30V 45A POWERDI

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6807pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.29W (Ta)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

ZXMN2B03E6TA

Diodes Incorporated

MOSFET N-CH 20V 4.3A SOT23-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-6
• Package / Case: SOT-23-6

패키지: SOT-23-6

DMG7702SFG-13

Diodes Incorporated

MOSFET N-CH 30V 12A POWERDI

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 15V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 890mW (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerWDFN

패키지: 8-PowerWDFN

ZTX1151ASTZ

Diodes Incorporated

TRANS PNP 40V 3A E-LINE

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 240mV @ 250mA, 3A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 145MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

FZT649TA

Diodes Incorporated

TRANS NPN 25V 3A SOT-223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
• Power - Max: 2W
• Frequency - Transition: 240MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-4

패키지: TO-261-4, TO-261AA

DDTA114TCA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

DCX143TU-7

Diodes Incorporated

TRANS PREBIAS NPN/PNP SOT363

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

BZX84B47-7-F

Diodes Incorporated

DIODE ZENER 47V SOT23

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

GDZ5V6LP3-7

Diodes Incorporated

DIODE ZENER 5.6V 250MW 2DFN

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±5%
• Power - Max: 250mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 1µA @ 2.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 2-XFDFN
• Supplier Device Package: 2-X3-DFN0603

패키지: 2-XFDFN

DFLU1400-7

Diodes Incorporated

DIODE GEN 400V 1A POWERDI123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 14pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: POWERDI?123

AP7311-28WG-7

Diodes Incorporated

IC REG LINEAR 2.8V 150MA SOT25

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.3V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 75µA ~ 85µA
• PSRR: 65dB (100Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

패키지: SC-74A, SOT-753

AP7340-23FS4-7

Diodes Incorporated

IC REG LINEAR 2.3V 150MA 4DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 2.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.36V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 50µA ~ 100µA
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4

패키지: 4-XDFN Exposed Pad

AP130-28YL-13

Diodes Incorporated

IC REG LINEAR 2.8V 300MA SOT89-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 100µA
• PSRR: 58dB (100Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

패키지: TO-243AA

ZHT431F01TC

Diodes Incorporated

IC VREF SHUNT ADJ SOT23

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 20V
• Current - Output: 100mA
• Tolerance: ±1%
• Temperature Coefficient: 67ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 50µA
• Operating Temperature: -55°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

PT8A3242WE

Diodes Incorporated

HEATER CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PT8A3295WEX

Diodes Incorporated

HEATER CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

AP2141MPG-13

Diodes Incorporated

IC PWR SW USB 1CH 0.5A 8-MSOP

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 2.7 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 500mA
• Rds On (Typ): 95 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
• Supplier Device Package: 8-MSOP-EP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad

AH285-PL-B

Diodes Incorporated

IC MOTOR DRIVER ON/OFF 5SIP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Low Side (2)
• Interface: On/Off
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Fan Motor Driver
• Current - Output: 500mA
• Voltage - Supply: 3.8 V ~ 20 V
• Voltage - Load: 3.8 V ~ 20 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 5-SIP
• Supplier Device Package: 5-SIP

패키지: 5-SIP

DGD2117S8-13

Diodes Incorporated

IC GATE DRVR HIGH SIDE 8SO

• Driven Configuration: High-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 6V, 9.5V
• Current - Peak Output (Source, Sink): 290mA, 600mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 75ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

74AUP1G14FS3-7

Diodes Incorporated

IC INV SCHMITT-TRIG DFN1010-6

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: Schmitt Trigger
• Voltage - Supply: 0.8 V ~ 3.6 V
• Current - Quiescent (Max): 0.5µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.15 V ~ 0.88 V
• Logic Level - High: 0.65 V ~ 2.32 V
• Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN0808-4
• Package / Case: 4-UFDFN Exposed Pad

패키지: 4-UFDFN Exposed Pad

PI74FCT16245ATVEX

Diodes Incorporated

IC TXRX 16BIT BIDIR 48SSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 64mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-BSSOP (0.295", 7.50mm Width)
• Supplier Device Package: 48-SSOP

패키지: 48-BSSOP (0.295", 7.50mm Width)

PI5A4157CEX-1612

Diodes Incorporated

IC SWITCH SPDT 0.8 OHM 6-SOT363

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 1
• On-State Resistance (Max): 1.2 Ohm
• Channel-to-Channel Matching (ΔRon): 10 mOhm
• Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 18ns, 20ns
• -3db Bandwidth: 150MHz
• Charge Injection: 35pC
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 20nA
• Crosstalk: -70dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: -
• Supplier Device Package: -

패키지: -

SMBJ64A-13

Diodes Incorporated

TVS DIODE 64VWM 103VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 5.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB

패키지: DO-214AA, SMB

MMBZ9V1AL-7-F

Diodes Incorporated

TVS DIODE 6VWM 14VC SOT23-3

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6V
• Voltage - Breakdown (Min): 8.65V
• Voltage - Clamping (Max) @ Ipp: 14V
• Current - Peak Pulse (10/1000µs): 1.7A
• Power - Peak Pulse: 24W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

SBR20A45CTB-13

Diodes Incorporated

DIODE ARR SBR 45V 20A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 45 V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

패키지: -

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AZ432BZ-G1

Diodes Incorporated

IC VREF SHUNT ADJ 1% TO92

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): 18 V
• Current - Output: 100 mA
• Tolerance: ±1%
• Temperature Coefficient: 20ppm/°C Typical
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 80 µA
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Supplier Device Package: TO-92

패키지: -

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DMN7022LFGQ-13

Diodes Incorporated

MOSFET N-CH 75V 23A POWERDI3333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75 V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2737 pF @ 35 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerVDFN

패키지: -

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DMNH6069SFVWQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI3333-8 (SWP) Type UX
• Package / Case: 8-PowerVDFN

패키지: -

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