Diodes Incorporated 제품

ZXMN6A25N8TA

Diodes Incorporated

MOSFET N-CH 60V 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

DMN13H750S-7

Diodes Incorporated

MOSFET N-CH 130V 1A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 130V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 770mW (Ta)
• Rds On (Max) @ Id, Vgs: 750 mOhm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

MMBTA06-7

Diodes Incorporated

TRANS NPN 80V 0.5A SOT23-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

BC857C-7-F

Diodes Incorporated

TRANS PNP 45V 0.1A SOT23-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 200MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

SD830-B

Diodes Incorporated

DIODE SCHOTTKY 30V 8A AXIAL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Capacitance @ Vr, F: 550pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

B330A-13

Diodes Incorporated

DIODE SCHOTTKY 30V 3A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

BAV21WS-7

Diodes Incorporated

DIODE GEN PURP 200V 200MA SOD323

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: SC-76, SOD-323

SBR1045SD1-T

Diodes Incorporated

DIODE SBR 45V 10A DO201AD

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 450µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

BAS40W-05-7

Diodes Incorporated

DIODE ARRAY SCHOTTKY 40V SOT323

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 200nA @ 30V
• Operating Temperature - Junction: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

BAV99-13-F

Diodes Incorporated

DIODE ARRAY GP 75V 300MA SOT23

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io) (per Diode): 300mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 2.5µA @ 75V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

AZ1085D-1.8TRE1

Diodes Incorporated

IC REG LINEAR 1.8V 3A TO252-2

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 12V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.5V @ 3A
• Current - Output: 3A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 72dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

PAM2305CGF250

Diodes Incorporated

IC REG BUCK 2.5V 1A SYNC 6DFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Fixed
• Number of Outputs: 1
• Voltage - Input (Min): 2.5V
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Current - Output: 1A
• Frequency - Switching: 1.5MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-DFN (2x2)

패키지: 6-WDFN Exposed Pad

AP2815AMMTR-G1

Diodes Incorporated

IC USB POWER SWITCH 8MSOP

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 2.7 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.5A
• Rds On (Typ): 60 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

AP2511AMP-13

Diodes Incorporated

USB POWER SWITCH 8MSOP

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 2.7 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 70 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled, Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
• Supplier Device Package: 8-MSOP-EP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad

AH5771-PG-B

Diodes Incorporated

IC MOTOR DRIVER ON/OFF 4SIP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: On/Off
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Fan Motor Driver
• Current - Output: 400mA
• Voltage - Supply: 2.5 V ~ 15 V
• Voltage - Load: 2.5 V ~ 15 V
• Operating Temperature: -40°C ~ 100°C (TA)
• Mounting Type: Through Hole
• Package / Case: 4-SIP
• Supplier Device Package: 4-SIP

패키지: 4-SIP

PI2EQX3201BLZFE

Diodes Incorporated

IC REDRIVER SATA2 2CH 36TQFN

• Type: Buffer, ReDriver
• Applications: SATA2
• Input: CML
• Output: CML
• Data Rate (Max): 3Gbps
• Number of Channels: 2
• Delay Time: 2.0ns
• Signal Conditioning: Input Equalization, Output De-Emphasis
• Capacitance - Input: -
• Voltage - Supply: 1.5 V, 1.8 V
• Current - Supply: 90mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: -
• Package / Case: 36-WFQFN Exposed Pad
• Supplier Device Package: 36-TQFN-EP (6x5)

패키지: 36-WFQFN Exposed Pad

PI7C9X1172BLEX

Diodes Incorporated

IC BRIDGE CTRLR I2C/SPI 24TQFN

• Protocol: I2C
• Function: Bridge, I2C/SPI to UART
• Interface: UART
• Standards: -
• Voltage - Supply: 1.8V, 2.5V, 3.3V
• Current - Supply: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PI5A4599ATEX

Diodes Incorporated

IC SWITCH SPDT SOT23-6

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 1
• On-State Resistance (Max): 8 Ohm
• Channel-to-Channel Matching (ΔRon): 100 mOhm
• Voltage - Supply, Single (V+): 2 V ~ 6 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 15ns, 10ns
• -3db Bandwidth: 30MHz
• Charge Injection: 1.5pC
• Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -80dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-23-6

패키지: SOT-23-6

AH9247Z3-G1

Diodes Incorporated

MAGNETIC SWITCH OMNIPOLAR TO92S

• Function: Omnipolar Switch
• Technology: Hall Effect
• Polarization: Either
• Sensing Range: ±5.5mT Trip, ±4.5mT Release
• Test Condition: 25°C
• Voltage - Supply: 2.5 V ~ 5.5 V
• Current - Supply (Max): 15µA
• Current - Output (Max): 2mA
• Output Type: Digital
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 3-SIP Module
• Supplier Device Package: TO-92S

패키지: 3-SIP Module

ZAMP002H6TC

Diodes Incorporated

IC AMP 800-2500MHZ SC70-6

• Frequency: 800MHz ~ 2.5GHz
• P1dB: 7dBm (5mW)
• Gain: 21dB ~ 22dB
• Noise Figure: 6dB
• RF Type: DBS, Set Top Box, SMR, General Purpose
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Supply: 21mA ~ 24mA
• Test Frequency: 950MHz
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: -

패키지: 6-TSSOP, SC-88, SOT-363

PT8A3514APEX

Diodes Incorporated

IRON CONTROLLER DIP-8

• Applications: Smart Iron Controller
• Current - Supply: 400µA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -10°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PAM3115ABA180

Diodes Incorporated

IC REG LINEAR 1.8V 1.5A SOT223

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 3.6V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.35V @ 1.5A
• Current - Output: 1.5A
• Current - Quiescent (Iq): 150µA
• Current - Supply (Max): 600µA
• PSRR: 55dB ~ 35dB (100Hz ~ 10kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

UG1007_HF-A52

Diodes Incorporated

ULTRAFAST RECOVERY RECTIFIER DO-

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1 kV
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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DMC3060LVTQ-13

Diodes Incorporated

MOSFET N/P-CH 30V 3.6A TSOT26

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
• Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
• Power - Max: 830mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSOT-26

패키지: -

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DMT8030LFDF-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V U-DFN2020

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta)
• Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6 (Type F)
• Package / Case: 6-UDFN Exposed Pad

패키지: -

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DMN62D2UTQ-7

Diodes Incorporated

2N7002 FAMILY SOT523 T&R 3K

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 334mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400mW (Ta)
• Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-523
• Package / Case: SOT-523

패키지: -

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DMP3011SFK-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V U-DFN2523-

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 1.04W (Ta)
• Rds On (Max) @ Id, Vgs: 12mOhm @ 9.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2523-6
• Package / Case: 6-PowerUDFN

패키지: -

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FZT4403TA

Diodes Incorporated

TRANS PNP SW -40V -600MA SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 600 mA
• Voltage - Collector Emitter Breakdown (Max): 40 V
• Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 1.5 W
• Frequency - Transition: 200MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-3

패키지: -

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