Diodes Incorporated 제품

FN5400024

Diodes Incorporated

OSCILLATOR XO 54.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 54MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 40mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.071" (1.80mm)

패키지: 4-SMD, No Lead

FD0180009

Diodes Incorporated

OSCILLATOR XO 1.8432MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 1.8432MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±25ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

패키지: 4-SMD, No Lead

NX53D3301Z

Diodes Incorporated

OSC XO 133.333333MHZ - SMD

• Type: XO (Standard)
• Frequency: 133.333333MHz
• Function: Enable/Disable
• Output: -
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 70mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.053" (1.35mm)

패키지: 6-SMD, No Lead

VN10LFTA

Diodes Incorporated

MOSFET N-CH 60V 150MA SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 330mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

FMMTL717TC

Diodes Incorporated

TRANS PNP 12V 1.25A SOT23-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.25A
• Voltage - Collector Emitter Breakdown (Max): 12V
• Vce Saturation (Max) @ Ib, Ic: 290mV @ 50mA, 1.25A
• Current - Collector Cutoff (Max): 10nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
• Power - Max: 500mW
• Frequency - Transition: 205MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

BZT585B2V7T-7

Diodes Incorporated

DIODE ZENER 2.7V 350MW SOD523

• Voltage - Zener (Nom) (Vz): 2.7V
• Tolerance: ±2%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

패키지: SC-79, SOD-523

PD3Z284C3V9-7

Diodes Incorporated

DIODE ZENER 3.9V POWERDI323

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 323
• Supplier Device Package: PowerDI? 323

패키지: PowerDI? 323

ES2CA-13

Diodes Incorporated

DIODE GEN PURP 150V 2A SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

DFLS120LQ-7

Diodes Incorporated

DIODE SCHOTTKY 20V 1A POWERDI123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Capacitance @ Vr, F: 75pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: POWERDI?123

1N4448W-7-F

Diodes Incorporated

DIODE GEN PURP 75V 250MA SOD123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 2.5µA @ 75V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: SOD-123

MBR30100CTF-E1

Diodes Incorporated

DIODE ARRAY SCHOTTKY 100V TO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F-3

패키지: TO-220-3 Full Pack

DF10M

Diodes Incorporated

RECT BRIDGE GPP 1000V 1A DF-M

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-EDIP (0.300", 7.62mm)
• Supplier Device Package: DFM

패키지: 4-EDIP (0.300", 7.62mm)

AP2114DA-3.3TRG1

Diodes Incorporated

IC REG LINEAR 3.3V 1A TO252-2

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.75V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 90µA
• PSRR: 65dB (100Hz ~ 1kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

PT7M8202B12TA5EX

Diodes Incorporated

IC REG LINEAR 300MA SOT23-5

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

패키지: SC-74A, SOT-753

1.5KE33A-B

Diodes Incorporated

TVS DIODE 28.2VWM 45.7VC DO201

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 28.2V
• Voltage - Breakdown (Min): 31.4V
• Voltage - Clamping (Max) @ Ipp: 45.7V
• Current - Peak Pulse (10/1000µs): 33A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201

패키지: DO-201AA, DO-27, Axial

SMAJ40CA-13-F

Diodes Incorporated

TVS DIODE 40VWM 64.5VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 40V
• Voltage - Breakdown (Min): 44.4V
• Voltage - Clamping (Max) @ Ipp: 64.5V
• Current - Peak Pulse (10/1000µs): 6.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA

패키지: DO-214AC, SMA

PS8A0057NPEX

Diodes Incorporated

HEATER CONTROLLER DIP-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

B2100SAF-13

Diodes Incorporated

DIODE SCHOTTKY 100V 2A SMAF

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Capacitance @ Vr, F: 93pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: SMAF
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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ZLLS400TA-79

Diodes Incorporated

DIODE SCHOTTKY 40V 520MA SOD323

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 520mA
• Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 30 V
• Capacitance @ Vr, F: 15pF @ 30V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: 150°C

패키지: -

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FMMT494QTA

Diodes Incorporated

TRANS NPN 120V 1A SOT23-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 120 V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
• Power - Max: 500 mW
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: -

MMBD4448HTW-7-G

Diodes Incorporated

DIODE GENERAL PURPOSE SOT23

• Diode Configuration: -
• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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DMTH4007LPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 85A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.7W (Ta), 83.3W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI5060-8 (Type UX)
• Package / Case: 8-PowerTDFN

패키지: -

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AP22655WU-7

Diodes Incorporated

LOAD SWITCH TSOT26 T&R 3K

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 3V ~ 5.5V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.14A
• Rds On (Typ): 50mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled, Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSOT-26 (Type A1)

패키지: -

MMBZ5248BT-7-G

Diodes Incorporated

DIODE ZENER SOT523

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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DMTH3004LFGQ-13

Diodes Incorporated

MOSFET N-CH 30V 15A PWRDI3333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: POWERDI3333-8
• Package / Case: 8-PowerVDFN

패키지: -

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DMP2900UVQ-13

Diodes Incorporated

MOSFET 2P-CH 20V 0.85A SOT563

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
• Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V
• Power - Max: 500mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

패키지: -

DMTH45M5SPDWQ-13

Diodes Incorporated

MOSFET 2N-CH 40V 79A POWERDI50

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
• Power - Max: 3.3W (Ta), 60W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8 (Type UXD)

패키지: -

AP7347D-105FDZW-7B

Diodes Incorporated

LDO CMOS LOWCURR W-DFN2020-6 T&R

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.05V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.95V @ 500mA
• Current - Output: 500mA
• Current - Quiescent (Iq): 125 µA
• Current - Supply (Max): -
• PSRR: 75dB (1kHz)
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: W-DFN2020-6 (SWP) (Type A1)

패키지: -

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