페이지 295 - Diodes Incorporated 제품

부품 번호	제조업체	설명	패키지	재고
FK7770001	Diodes Incorporated	OSCILLATOR XO 77.76MHZ CMOS SMD Type: XO (Standard) Frequency: 77.76MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 3.3V Frequency Stability: ±50ppm Operating Temperature: -20°C ~ 70°C Current - Supply (Max): 18mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Height - Seated (Max): 0.045" (1.15mm)	패키지: 4-SMD, No Lead	재고2,430
LMN200B02-7	Diodes Incorporated	MCU LOAD SWITCH 200MA SOT-363 Transistor Type: PNP Pre-Biased, N-Channel Pre-Biased Applications: Load Switch Voltage - Rated: 50V PNP, 60V N-Channel Current Rating: 200mA PNP, 115mA N-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고48,348
ZVP2106ASTOA	Diodes Incorporated	MOSFET P-CH 60V 0.28A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	패키지: E-Line-3	재고5,440
DMNH6042SSDQ-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SO-8 T&R 2 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V Power - Max: 2.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,472
ZTX712STOA	Diodes Incorporated	TRANS PNP DARL 60V 0.8A E-LINE Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.25V @ 8mA, 800mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고5,392
ZUMT2369ATA	Diodes Incorporated	TRANSISTOR NPN 15V 200MA SC70-3 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고3,376
DSS60600MZ4-13	Diodes Incorporated	TRANS PNP 60V 6A SOT-223 Transistor Type: PNP Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Power - Max: 1.2W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고170,256
DDTA115GKA-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SC59-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,544
DDTC123TUA-7	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고29,064
MMSZ5236BS-7	Diodes Incorporated	DIODE ZENER 7.5V 200MW SOD323 Voltage - Zener (Nom) (Vz): 7.5V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 6 Ohms Current - Reverse Leakage @ Vr: 3µA @ 6V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323	패키지: SC-76, SOD-323	재고2,672
DDZ9709-7	Diodes Incorporated	DIODE ZENER 24V 500MW SOD123 Voltage - Zener (Nom) (Vz): 24V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): - Current - Reverse Leakage @ Vr: 50nA @ 18.2V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고432,000
AZ23C47-7	Diodes Incorporated	DIODE ZENER ARRAY 47V SOT23-3 Configuration: 1 Pair Common Anode Voltage - Zener (Nom) (Vz): 47V Tolerance: ±5% Power - Max: 300mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: - Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고5,472
LLSD101C-13	Diodes Incorporated	DIODE SCHOTTKY 40V 15MA MINIMELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 15mA (DC) Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 30V Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: Mini MELF Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-213AA	재고7,872
SBRT20U60SP5-7D	Diodes Incorporated	DIODE SBR 60V 20A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 180µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -55°C ~ 150°C	패키지: PowerDI? 5	재고7,952
DFLS2100Q-7	Diodes Incorporated	DIODE SCHOTTKY 100V POWERDI123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 860mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 36pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -55°C ~ 175°C	패키지: POWERDI?123	재고54,618
SBRT40V100CTE	Diodes Incorporated	DIODE SBR TO262 Diode Configuration: 1 Pair Common Cathode Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 730mV @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 100V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-262-3 Full Pack, I2Pak Supplier Device Package: TO-262	패키지: TO-262-3 Full Pack, I2Pak	재고5,296
AP7335-SNG-7	Diodes Incorporated	IC REG LIN POS ADJ 300MA 6DFN Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 0.8V Voltage - Output (Max): 5V Voltage Dropout (Max): 0.2V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 80µA PSRR: 65dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-DFN2020 (2x2)	패키지: 6-UDFN Exposed Pad	재고72,000
AP431QG-7	Diodes Incorporated	IC VREF SHUNT ADJ SOT25 Reference Type: Shunt Output Type: Adjustable Voltage - Output (Min/Fixed): 2.495V Voltage - Output (Max): 36V Current - Output: 200mA Tolerance: ±1% Temperature Coefficient: 30ppm/°C Noise - 0.1Hz to 10Hz: - Noise - 10Hz to 10kHz: - Voltage - Input: - Current - Supply: - Current - Cathode: 500µA Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-25	패키지: SC-74A, SOT-753	재고113,160
AP9214LA-AK-HSB-7	Diodes Incorporated	IC BATT PROT LI-ION U-DFN2535 Function: Battery Protection Battery Chemistry: Lithium-Ion/Polymer Number of Cells: 1 Fault Protection: Over Current, Over Voltage, Short Circuit Interface: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2535-6	패키지: 6-UDFN Exposed Pad	재고7,632
PI74FCT162245CTAE	Diodes Incorporated	IC TRANSCVR DUAL N-INV 48TSSOP Logic Type: Transceiver, Non-Inverting Number of Elements: 2 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 24mA, 24mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.240", 6.10mm Width) Supplier Device Package: 48-TSSOP	패키지: 48-TFSOP (0.240", 6.10mm Width)	재고5,408
PI4ULS5V106ZHDEX	Diodes Incorporated	INTERFACE ULS U-QFN3030-16 Translator Type: Voltage Level Channel Type: Bidirectional Number of Circuits: 1 Channels per Circuit: 6 Voltage - VCCA: 0.95V ~ 3.3V Voltage - VCCB: 1.8V ~ 5V Input Signal: - Output Signal: - Output Type: Tri-State, Non-Inverted Data Rate: 100MHz Operating Temperature: -40°C ~ 85°C Features: - Mounting Type: Surface Mount Package / Case: 16-UFQFN Exposed Pad Supplier Device Package: 16-UQFN (3x3)	패키지: 16-UFQFN Exposed Pad	재고2,784
74AHC1G126QSE-7	Diodes Incorporated	IC BUFFER NON-INVERT 5.5V SOT353 Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SOT-353	패키지: -	재고16,710
AP7361E-28FGE-7	Diodes Incorporated	LDO CMOS HICURR U-DFN3030-8 T&R Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.5V @ 1A Current - Output: 1A Current - Quiescent (Iq): 91 µA Current - Supply (Max): - PSRR: 75dB ~ 55dB (1kHz ~ 10kHz) Control Features: Enable, Power Good Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: U-DFN3030-8 (Type E)	패키지: -	Request a Quote
DMN21D1UDA-7B	Diodes Incorporated	MOSFET 2N-CH 20V 0.455A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	패키지: -	Request a Quote
DMT15H053SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 101V~250V POWERDI5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	패키지: -	Request a Quote
DMN3060LW-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT323 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	패키지: -	Request a Quote
DMC2991UDA-7B	Diodes Incorporated	MOSFET N/P-CH 20V 0.48A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	패키지: -	재고29,592
DMT12H065LFDF-13	Diodes Incorporated	MOSFET N-CH 115V 4.3A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 115 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	패키지: -	Request a Quote

FK7770001

Diodes Incorporated

OSCILLATOR XO 77.76MHZ CMOS SMD

Type: XO (Standard)
Frequency: 77.76MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Current - Supply (Max): 18mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Height - Seated (Max): 0.045" (1.15mm)

패키지: 4-SMD, No Lead

재고2,430

LMN200B02-7

Diodes Incorporated

MCU LOAD SWITCH 200MA SOT-363

Transistor Type: PNP Pre-Biased, N-Channel Pre-Biased
Applications: Load Switch
Voltage - Rated: 50V PNP, 60V N-Channel
Current Rating: 200mA PNP, 115mA N-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고48,348

ZVP2106ASTOA

Diodes Incorporated

MOSFET P-CH 60V 0.28A TO92-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: E-Line (TO-92 compatible)
Package / Case: E-Line-3

패키지: E-Line-3

재고5,440

DMNH6042SSDQ-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8 T&R 2

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,472

ZTX712STOA

Diodes Incorporated

TRANS PNP DARL 60V 0.8A E-LINE

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.25V @ 8mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고5,392

ZUMT2369ATA

Diodes Incorporated

TRANSISTOR NPN 15V 200MA SC70-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고3,376

DSS60600MZ4-13

Diodes Incorporated

TRANS PNP 60V 6A SOT-223

Transistor Type: PNP
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Power - Max: 1.2W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고170,256

DDTA115GKA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,544

DDTC123TUA-7

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고29,064

MMSZ5236BS-7

Diodes Incorporated

DIODE ZENER 7.5V 200MW SOD323

Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 6 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 6V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

재고2,672

DDZ9709-7

Diodes Incorporated

DIODE ZENER 24V 500MW SOD123

Voltage - Zener (Nom) (Vz): 24V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): -
Current - Reverse Leakage @ Vr: 50nA @ 18.2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

패키지: SOD-123

재고432,000

AZ23C47-7

Diodes Incorporated

DIODE ZENER ARRAY 47V SOT23-3

Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 47V
Tolerance: ±5%
Power - Max: 300mW
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: -
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고5,472

LLSD101C-13

Diodes Incorporated

DIODE SCHOTTKY 40V 15MA MINIMELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 15mA (DC)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 200nA @ 30V
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-213AA

재고7,872

SBRT20U60SP5-7D

Diodes Incorporated

DIODE SBR 60V 20A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 180µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -55°C ~ 150°C

패키지: PowerDI? 5

재고7,952

DFLS2100Q-7

Diodes Incorporated

DIODE SCHOTTKY 100V POWERDI123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 860mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 36pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -55°C ~ 175°C

패키지: POWERDI?123

재고54,618

SBRT40V100CTE

Diodes Incorporated

DIODE SBR TO262

Diode Configuration: 1 Pair Common Cathode
Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 730mV @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 100V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I2Pak
Supplier Device Package: TO-262

패키지: TO-262-3 Full Pack, I2Pak

재고5,296

AP7335-SNG-7

Diodes Incorporated

IC REG LIN POS ADJ 300MA 6DFN

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 5V
Voltage Dropout (Max): 0.2V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 80µA
PSRR: 65dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-DFN2020 (2x2)

패키지: 6-UDFN Exposed Pad

재고72,000

AP431QG-7

Diodes Incorporated

IC VREF SHUNT ADJ SOT25

Reference Type: Shunt
Output Type: Adjustable
Voltage - Output (Min/Fixed): 2.495V
Voltage - Output (Max): 36V
Current - Output: 200mA
Tolerance: ±1%
Temperature Coefficient: 30ppm/°C
Noise - 0.1Hz to 10Hz: -
Noise - 10Hz to 10kHz: -
Voltage - Input: -
Current - Supply: -
Current - Cathode: 500µA
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SOT-25

패키지: SC-74A, SOT-753

재고113,160

AP9214LA-AK-HSB-7

Diodes Incorporated

IC BATT PROT LI-ION U-DFN2535

Function: Battery Protection
Battery Chemistry: Lithium-Ion/Polymer
Number of Cells: 1
Fault Protection: Over Current, Over Voltage, Short Circuit
Interface: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2535-6

패키지: 6-UDFN Exposed Pad

재고7,632

PI74FCT162245CTAE

Diodes Incorporated

IC TRANSCVR DUAL N-INV 48TSSOP

Logic Type: Transceiver, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Supplier Device Package: 48-TSSOP

패키지: 48-TFSOP (0.240", 6.10mm Width)

재고5,408

PI4ULS5V106ZHDEX

Diodes Incorporated

INTERFACE ULS U-QFN3030-16

Translator Type: Voltage Level
Channel Type: Bidirectional
Number of Circuits: 1
Channels per Circuit: 6
Voltage - VCCA: 0.95V ~ 3.3V
Voltage - VCCB: 1.8V ~ 5V
Input Signal: -
Output Signal: -
Output Type: Tri-State, Non-Inverted
Data Rate: 100MHz
Operating Temperature: -40°C ~ 85°C
Features: -
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Supplier Device Package: 16-UQFN (3x3)

패키지: 16-UFQFN Exposed Pad

재고2,784

74AHC1G126QSE-7

Diodes Incorporated

IC BUFFER NON-INVERT 5.5V SOT353

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: 3-State
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SOT-353

패키지: -

재고16,710

AP7361E-28FGE-7

Diodes Incorporated

LDO CMOS HICURR U-DFN3030-8 T&R

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.5V @ 1A
Current - Output: 1A
Current - Quiescent (Iq): 91 µA
Current - Supply (Max): -
PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
Control Features: Enable, Power Good
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: U-DFN3030-8 (Type E)

패키지: -

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DMN21D1UDA-7B

Diodes Incorporated

MOSFET 2N-CH 20V 0.455A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
Power - Max: 310mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

패키지: -

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DMT15H053SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 101V~250V POWERDI5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.9W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI5060-8 (Type UX)
Package / Case: 8-PowerTDFN

패키지: -

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DMN3060LW-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT323 T&R

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323

패키지: -

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DMC2991UDA-7B

Diodes Incorporated

MOSFET N/P-CH 20V 0.48A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

패키지: -

재고29,592

DMT12H065LFDF-13

Diodes Incorporated

MOSFET N-CH 115V 4.3A 6UDFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 115 V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2020-6 (Type F)
Package / Case: 6-UDFN Exposed Pad

패키지: -

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