페이지 313 - Diodes Incorporated 제품

부품 번호	제조업체	설명	패키지	재고
FK0500002	Diodes Incorporated	OSCILLATOR XO 5.000MHZ CMOS SMD Type: XO (Standard) Frequency: 5MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 3.3V Frequency Stability: ±50ppm Operating Temperature: -40°C ~ 85°C Current - Supply (Max): 10mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Height - Seated (Max): 0.045" (1.15mm)	패키지: 4-SMD, No Lead	재고5,562
DMPH4015SPS-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI506 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.6W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	패키지: 8-PowerTDFN	재고3,888
DMC6070LND-13	Diodes Incorporated	MOSFET N/P-CH 60V 8POWERDI FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	패키지: 8-PowerVDFN	재고6,784
BCX5310TA	Diodes Incorporated	TRANS PNP 80V 1A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고222,840
DDTA124EE-7-F	Diodes Incorporated	TRANS PREBIAS PNP 150MW SOT523 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고36,000
DDTD143TU-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고1,505,760
DDTB122TU-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 220 Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고25,788
MMSZ5231BS-7-F	Diodes Incorporated	DIODE ZENER 5.1V 200MW SOD323 Voltage - Zener (Nom) (Vz): 5.1V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 17 Ohms Current - Reverse Leakage @ Vr: 5µA @ 2V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323	패키지: SC-76, SOD-323	재고143,340
ES3AB-13	Diodes Incorporated	DIODE GEN PURP 50V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고3,200
SBR3U60P1Q-7	Diodes Incorporated	DIODE SBR 60V 3A PDI123 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -65°C ~ 150°C	패키지: POWERDI?123	재고5,616
SBL1630CT	Diodes Incorporated	DIODE ARRAY SCHOTTKY 30V TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 16A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Operating Temperature - Junction: -65°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고5,216
BAT54ATA	Diodes Incorporated	DIODE ARRAY SCHOTTKY 30V SOT23-3 Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 4µA @ 25V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,220,000
AP2121N-3.2TRE1	Diodes Incorporated	IC REG LINEAR 3.2V 200MA SOT23-3 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 3.2V Voltage - Output (Max): - Voltage Dropout (Max): 0.5V @ 200mA Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 50µA PSRR: 70dB (1kHz) Control Features: - Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고3,136
AZ34063UP-E1	Diodes Incorporated	IC REG BCK BST INV ADJ 1.5A 8DIP Function: Step-Up, Step-Down Output Configuration: Positive or Negative Topology: Buck, Boost Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 3V Voltage - Input (Max): 36V Voltage - Output (Min/Fixed): 1.25V Voltage - Output (Max): 36V Current - Output: 1.5A (Switch) Frequency - Switching: Up to 180kHz Synchronous Rectifier: No Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	패키지: 8-DIP (0.300", 7.62mm)	재고301,620
APX810-31SAG-7	Diodes Incorporated	IC MPU RESET CIRC 3.08V SOT23-3 Type: Simple Reset/Power-On Reset Number of Voltages Monitored: 1 Output: Push-Pull, Totem Pole Reset: Active High Reset Timeout: 140 ms Minimum Voltage - Threshold: 3.08V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고72,756
AUR9807VSGD	Diodes Incorporated	IC BATT CHRGR LI-ION SGL 20QFN Battery Chemistry: Lithium-Ion Number of Cells: 1 Current - Charging: Constant - Programmable Programmable Features: Timer Fault Protection: Over Temperature, Over Voltage, Reverse Current, Short Circuit Charge Current - Max: 1.5A Battery Pack Voltage: 4.2V Voltage - Supply (Max): 6.3V Interface: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 20-WFQFN Exposed Pad Supplier Device Package: 20-QFN (4.5x3.5)	패키지: 20-WFQFN Exposed Pad	재고6,032
PI7C9X112SLFDEX	Diodes Incorporated	IC PCIE-PCIX BRIDGE 128LQFP Applications: PCI-to-PCI Bridge Interface: PCI Express Voltage - Supply: 3.3V Package / Case: - Supplier Device Package: - Mounting Type: -	패키지: -	재고7,424
PI3EQX6801ZDEX	Diodes Incorporated	IC REDRIVER SAS/SATA 20TQFN Type: Buffer, ReDriver Applications: SAS, SATA Input: CML Output: CML Data Rate (Max): 6.5Gbps Number of Channels: 2 Delay Time: - Signal Conditioning: Input Equalization, Output Pre-Emphasis Capacitance - Input: - Voltage - Supply: 1.5V, 3.3V Current - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,752
PI3DBS12412AZHEX	Diodes Incorporated	IC MUX/DEMUX 2:4 40TQFN Applications: Thunderbolt Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: - Number of Channels: 2 On-State Resistance (Max): - Voltage - Supply, Single (V+): 3.3V Voltage - Supply, Dual (V±): - -3db Bandwidth: 11.3GHz Features: Bi-Directional Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 40-WFQFN Exposed Pad Supplier Device Package: 40-TQFN (3x6)	패키지: 40-WFQFN Exposed Pad	재고3,152
1.5KE47CA-T	Diodes Incorporated	TVS DIODE 40.2VWM 64.8VC DO201A Type: Zener Unidirectional Channels: - Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 40.2V Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Current - Peak Pulse (10/1000µs): 23.2A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201	패키지: DO-201AA, DO-27, Axial	재고3,598
PI7C9X1172CZHE	Diodes Incorporated	SPI BRIDGE W-QFN5050-32 TRAY 490 Protocol: I²C Function: Bridge, I²C/SPI to UART Interface: UART Standards: - Voltage - Supply: 1.62 V ~ 3.63 V Current - Supply: 6mA Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 32-WFQFN Exposed Pad Supplier Device Package: 32-TQFN (5x5)	패키지: 32-WFQFN Exposed Pad	재고3,472
AP2331TDSA-7	Diodes Incorporated	USB POWER SWITCH,SOT23,T&R,3K Function: Current Switch Sensing Method: High-Side Accuracy: - Voltage - Input: 2.7 V ~ 5.2 V Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고3,232
AP2401B31KTR-G1	Diodes Incorporated	IC CURRENT LIMIT SWITCH Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,584
BAV99-7-G	Diodes Incorporated	DIODE ARRAY GP 75V 300MA SOT23-3 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io) (per Diode): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Operating Temperature - Junction: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote
1N4148WTQ-7	Diodes Incorporated	DIODE GEN PURP 80V 125MA SOD523 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 125mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	재고161,250
B250BE-13	Diodes Incorporated	DIODE SCHOTTKY 50V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 50 V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
DL4002-13-F	Diodes Incorporated	DIODE GEN PURP 100V 1A MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: MELF Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
DMTH15H053SPSW-13	Diodes Incorporated	MOSFET BVDSS: 101V~250V POWERDI5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	패키지: -	Request a Quote

FK0500002

Diodes Incorporated

OSCILLATOR XO 5.000MHZ CMOS SMD

Type: XO (Standard)
Frequency: 5MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Current - Supply (Max): 10mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Height - Seated (Max): 0.045" (1.15mm)

패키지: 4-SMD, No Lead

재고5,562

DMPH4015SPS-13

Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI506

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 2.6W (Ta)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.8A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI5060-8
Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

재고3,888

DMC6070LND-13

Diodes Incorporated

MOSFET N/P-CH 60V 8POWERDI

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8

패키지: 8-PowerVDFN

재고6,784

BCX5310TA

Diodes Incorporated

TRANS PNP 80V 1A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고222,840

DDTA124EE-7-F

Diodes Incorporated

TRANS PREBIAS PNP 150MW SOT523

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고36,000

DDTD143TU-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고1,505,760

DDTB122TU-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 220
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고25,788

MMSZ5231BS-7-F

Diodes Incorporated

DIODE ZENER 5.1V 200MW SOD323

Voltage - Zener (Nom) (Vz): 5.1V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

재고143,340

ES3AB-13

Diodes Incorporated

DIODE GEN PURP 50V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고3,200

SBR3U60P1Q-7

Diodes Incorporated

DIODE SBR 60V 3A PDI123

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -65°C ~ 150°C

패키지: POWERDI?123

재고5,616

SBL1630CT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V TO220AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 16A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고5,216

BAT54ATA

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V SOT23-3

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 4µA @ 25V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,220,000

AP2121N-3.2TRE1

Diodes Incorporated

IC REG LINEAR 3.2V 200MA SOT23-3

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 3.2V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.5V @ 200mA
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 50µA
PSRR: 70dB (1kHz)
Control Features: -
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고3,136

AZ34063UP-E1

Diodes Incorporated

IC REG BCK BST INV ADJ 1.5A 8DIP

Function: Step-Up, Step-Down
Output Configuration: Positive or Negative
Topology: Buck, Boost
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 3V
Voltage - Input (Max): 36V
Voltage - Output (Min/Fixed): 1.25V
Voltage - Output (Max): 36V
Current - Output: 1.5A (Switch)
Frequency - Switching: Up to 180kHz
Synchronous Rectifier: No
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

패키지: 8-DIP (0.300", 7.62mm)

재고301,620

APX810-31SAG-7

Diodes Incorporated

IC MPU RESET CIRC 3.08V SOT23-3

Type: Simple Reset/Power-On Reset
Number of Voltages Monitored: 1
Output: Push-Pull, Totem Pole
Reset: Active High
Reset Timeout: 140 ms Minimum
Voltage - Threshold: 3.08V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고72,756

AUR9807VSGD

Diodes Incorporated

IC BATT CHRGR LI-ION SGL 20QFN

Battery Chemistry: Lithium-Ion
Number of Cells: 1
Current - Charging: Constant - Programmable
Programmable Features: Timer
Fault Protection: Over Temperature, Over Voltage, Reverse Current, Short Circuit
Charge Current - Max: 1.5A
Battery Pack Voltage: 4.2V
Voltage - Supply (Max): 6.3V
Interface: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 20-WFQFN Exposed Pad
Supplier Device Package: 20-QFN (4.5x3.5)

패키지: 20-WFQFN Exposed Pad

재고6,032

PI7C9X112SLFDEX

Diodes Incorporated

IC PCIE-PCIX BRIDGE 128LQFP

Applications: PCI-to-PCI Bridge
Interface: PCI Express
Voltage - Supply: 3.3V
Package / Case: -
Supplier Device Package: -
Mounting Type: -

패키지: -

재고7,424

PI3EQX6801ZDEX

Diodes Incorporated

IC REDRIVER SAS/SATA 20TQFN

Type: Buffer, ReDriver
Applications: SAS, SATA
Input: CML
Output: CML
Data Rate (Max): 6.5Gbps
Number of Channels: 2
Delay Time: -
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Capacitance - Input: -
Voltage - Supply: 1.5V, 3.3V
Current - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,752

PI3DBS12412AZHEX

Diodes Incorporated

IC MUX/DEMUX 2:4 40TQFN

Applications: Thunderbolt
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: -
Number of Channels: 2
On-State Resistance (Max): -
Voltage - Supply, Single (V+): 3.3V
Voltage - Supply, Dual (V±): -
-3db Bandwidth: 11.3GHz
Features: Bi-Directional
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 40-WFQFN Exposed Pad
Supplier Device Package: 40-TQFN (3x6)

패키지: 40-WFQFN Exposed Pad

재고3,152

1.5KE47CA-T

Diodes Incorporated

TVS DIODE 40.2VWM 64.8VC DO201A

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 40.2V
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Current - Peak Pulse (10/1000µs): 23.2A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201

패키지: DO-201AA, DO-27, Axial

재고3,598

PI7C9X1172CZHE

Diodes Incorporated

SPI BRIDGE W-QFN5050-32 TRAY 490

Protocol: I²C
Function: Bridge, I²C/SPI to UART
Interface: UART
Standards: -
Voltage - Supply: 1.62 V ~ 3.63 V
Current - Supply: 6mA
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 32-WFQFN Exposed Pad
Supplier Device Package: 32-TQFN (5x5)

패키지: 32-WFQFN Exposed Pad

재고3,472

AP2331TDSA-7

Diodes Incorporated

USB POWER SWITCH,SOT23,T&R,3K

Function: Current Switch
Sensing Method: High-Side
Accuracy: -
Voltage - Input: 2.7 V ~ 5.2 V
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고3,232

AP2401B31KTR-G1

Diodes Incorporated

IC CURRENT LIMIT SWITCH

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,584

BAV99-7-G

Diodes Incorporated

DIODE ARRAY GP 75V 300MA SOT23-3

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

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1N4148WTQ-7

Diodes Incorporated

DIODE GEN PURP 80V 125MA SOD523

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 125mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

재고161,250

B250BE-13

Diodes Incorporated

DIODE SCHOTTKY 50V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

DL4002-13-F

Diodes Incorporated

DIODE GEN PURP 100V 1A MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: MELF
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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DMTH15H053SPSW-13

Diodes Incorporated

MOSFET BVDSS: 101V~250V POWERDI5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.3W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI5060-8 (Type UX)
Package / Case: 8-PowerTDFN

패키지: -

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