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Diodes Incorporated 제품

기록 22,098
페이지  376/790
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FN1320001
Diodes Incorporated

OSCILLATOR XO 13.288MHZ CMOS SMD

  • Type: XO (Standard)
  • Frequency: 13.288MHz
  • Function: Enable/Disable
  • Output: CMOS
  • Voltage - Supply: 3.3V
  • Frequency Stability: ±25ppm
  • Operating Temperature: -20°C ~ 70°C
  • Current - Supply (Max): 15mA
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
  • Height - Seated (Max): 0.071" (1.80mm)
패키지: 4-SMD, No Lead
재고4,050
hot ZXMN2A01E6TA
Diodes Incorporated

MOSFET N-CH 20V 2.44 A SOT-23-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 303pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6
  • Package / Case: SOT-23-6
패키지: SOT-23-6
재고1,347,420
ZTX458STOB
Diodes Incorporated

TRANS NPN 400V 0.3A E-LINE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
패키지: E-Line-3, Formed Leads
재고7,232
hot PD3Z284C20-7
Diodes Incorporated

DIODE ZENER 20V 500MW POWERDI323

  • Voltage - Zener (Nom) (Vz): 20V
  • Tolerance: ±6%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 14V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 323
  • Supplier Device Package: PowerDI? 323
패키지: PowerDI? 323
재고18,144
MMBZ5242BS-7-F
Diodes Incorporated

DIODE ZENER ARRAY 12V SOT363

  • Configuration: 2 Independent
  • Voltage - Zener (Nom) (Vz): 12V
  • Tolerance: ±5%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 9.1V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고46,170
hot 2A04-T
Diodes Incorporated

DIODE GEN PURP 400V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-204AC, DO-15, Axial
재고48,000
UG3005-T
Diodes Incorporated

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-201AD, Axial
재고7,280
RL207-T
Diodes Incorporated

DIODE GEN PURP 1KV 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-204AC, DO-15, Axial
재고4,048
hot ES2DA-13-F
Diodes Incorporated

DIODE GEN PURP 200V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AC, SMA
재고1,523,484
hot GBPC3510W
Diodes Incorporated

RECT BRIDGE GPP 35A 1000V GBPCW

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고33,396
ZSR900CL
Diodes Incorporated

IC REG LINEAR 9V 200MA TO92-3

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 20V
  • Voltage - Output (Min/Fixed): 9V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 600µA
  • PSRR: 57dB (120Hz)
  • Control Features: -
  • Protection Features: Over Temperature, Short Circuit
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고3,328
AP7343-295FS4-7B
Diodes Incorporated

IC REG LINEAR 2.95V 300MA 4DFN

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.25V
  • Voltage - Output (Min/Fixed): 2.95V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.3V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA
  • PSRR: 75dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: X2-DFN1010-4
패키지: 4-XDFN Exposed Pad
재고6,128
AP7361-33FGE-7
Diodes Incorporated

IC REG LINEAR 3.3V 1A DFN3030-8

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.7V @ 1A
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 90µA
  • PSRR: 65dB ~ 45dB (1kHz ~ 10kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: U-DFN3030-8 (Type E)
패키지: 8-UDFN Exposed Pad
재고7,376
AP9214LA-AE-HSB-7
Diodes Incorporated

IC BATT PROT LI-ION U-DFN2535

  • Function: Battery Protection
  • Battery Chemistry: Lithium-Ion/Polymer
  • Number of Cells: 1
  • Fault Protection: Over Current, Over Voltage, Short Circuit
  • Interface: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2535-6
패키지: 6-UDFN Exposed Pad
재고5,392
PI3VT3245-AQEX
Diodes Incorporated

IC XLATR BUS SWITCH LV 20QSOP

  • Type: Bus Switch
  • Circuit: 8 x 1:1
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 2.3 V ~ 2.7 V, 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,696
PI3B3257QEX-2017
Diodes Incorporated

BUS SWITCH 3V QSOP-16

  • Type: -
  • Circuit: -
  • Independent Circuits: -
  • Current - Output High, Low: -
  • Voltage Supply Source: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,032
hot PI3C3306LE
Diodes Incorporated

IC BUS SWITCH 8TSSOP

  • Type: Bus Switch
  • Circuit: 1 x 1:1
  • Independent Circuits: 2
  • Current - Output High, Low: -
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고48,336
74AUP1G04FW5-7
Diodes Incorporated

IC GATE INVERTER 1INPUT X1DFN-6

  • Logic Type: Inverter
  • Number of Circuits: 1
  • Number of Inputs: 1
  • Features: -
  • Voltage - Supply: 0.8 V ~ 3.6 V
  • Current - Quiescent (Max): 0.5µA
  • Current - Output High, Low: 4mA, 4mA
  • Logic Level - Low: 0.7 V ~ 0.9 V
  • Logic Level - High: 1.6 V ~ 2 V
  • Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: X1-DFN1010-6
  • Package / Case: 6-XDFN
패키지: 6-XDFN
재고7,568
74LVC2G17W6-7
Diodes Incorporated

IC BUFF NON-INV 5.5V SOT26

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 32mA, 32mA
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
패키지: SOT-23-6
재고28,110
hot TB1800M-13-F
Diodes Incorporated

THYRISTOR PROTECT BIDIR 50A SMB

  • Voltage - Breakover: 220V
  • Voltage - Off State: 160V
  • Voltage - On State: 3.5V
  • Current - Peak Pulse (8/20µs): 250A
  • Current - Peak Pulse (10/1000µs): 50A
  • Current - Hold (Ih): 150mA
  • Number of Elements: 1
  • Capacitance: 90pF
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
패키지: DO-214AA, SMB
재고160,800
DMP6050SPS-13
Diodes Incorporated

MOSFET P-CH 60V 5.7A PWRDI5060-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
패키지: -
재고17,256
BZT585B2V4TQ-13
Diodes Incorporated

TIGHT TOLERANCE ZENER DIODE SOD5

  • Voltage - Zener (Nom) (Vz): 2.4 V
  • Tolerance: ±2%
  • Power - Max: 350 mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 50 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
패키지: -
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DPS1155FEA-13
Diodes Incorporated

PD SWITCH V-QFN3025-20(TYPE_A) T

  • Switch Type: -
  • Number of Outputs: -
  • Ratio - Input:Output: -
  • Output Configuration: -
  • Output Type: -
  • Interface: -
  • Voltage - Load: -
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: -
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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DXTN22040DFGQ-7
Diodes Incorporated

PWR MID PERF TRANSISTOR POWERDI3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
  • Power - Max: 1.1 W
  • Frequency - Transition: 198MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
패키지: -
재고5,940
AP34063S8L-13
Diodes Incorporated

IC MULTI CONFIG ADJ 1.6A 8SOIC

  • Function: Step-Up, Step-Down
  • Output Configuration: Positive or Negative
  • Topology: Buck, Boost
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 3V
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 1.25V
  • Voltage - Output (Max): 40V (Switch)
  • Current - Output: 1.6A (Switch)
  • Frequency - Switching: 100kHz
  • Synchronous Rectifier: No
  • Operating Temperature: 0°C ~ 105°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
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ZHCS500QTC
Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOT23-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 30 V
  • Capacitance @ Vr, F: 20pF @ 25V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: 125°C (Max)
패키지: -
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BZX84C8V2Q-13-F
Diodes Incorporated

ZENER DIODE SOT23 T&R 10K

  • Voltage - Zener (Nom) (Vz): 8.2 V
  • Tolerance: ±6.1%
  • Power - Max: 300 mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 700 nA @ 5 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
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DMTH6002LPSW-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8289 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (SWP)
  • Package / Case: 8-PowerTDFN
패키지: -
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