페이지 399 - Diodes Incorporated 제품

부품 번호	제조업체	설명	패키지	재고
DMP1022UFDF-7	Diodes Incorporated	MOSFET P-CH 12V 9.5A U-DFN2020-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48.3nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2712pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 730mW (Ta) Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	패키지: 6-UDFN Exposed Pad	재고36,000
ZTX776	Diodes Incorporated	TRANS PNP 200V 1A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V Power - Max: 1W Frequency - Transition: 30MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3	재고2,912
MMBTA28-7-F	Diodes Incorporated	TRANS NPN DARL 80V 0.5A SOT23-3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 300mW Frequency - Transition: 125MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고265,680
ZXTP2008GTA	Diodes Incorporated	TRANS PNP 30V 5.5A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 5.5A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 210mV @ 500mA, 5.5A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 3W Frequency - Transition: 110MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고188,412
DCX53-13	Diodes Incorporated	TRANS PNP 80V 1A SOT89-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고173,016
FMMT618TA	Diodes Incorporated	TRANS NPN 20V 2.5A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2.5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Power - Max: 625mW Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,534,760
DDTC114GKA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SC59-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,688
DDTC114EE-7	Diodes Incorporated	TRANS PREBIAS NPN 150MW SOT523 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고3,520
MMBZ5234BW-7	Diodes Incorporated	DIODE ZENER 6.2V 200MW SOT323 Voltage - Zener (Nom) (Vz): 6.2V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 5µA @ 4V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고29,394
ZMV930TA	Diodes Incorporated	DIODE VAR CAP 8.7PF 12V SOD-323 Capacitance @ Vr, F: 2.9pF @ 4V, 50MHz Capacitance Ratio: - Capacitance Ratio Condition: - Voltage - Peak Reverse (Max): 12V Diode Type: Single Q @ Vr, F: 200 @ 4V, 50MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323	패키지: SC-76, SOD-323	재고16,236
1N5711WS-7	Diodes Incorporated	DIODE SCHOTTKY 70V 150MW SOD-323 Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 70V Current - Max: 15mA Capacitance @ Vr, F: 2pF @ 0V, 1MHz Resistance @ If, F: - Power Dissipation (Max): 150mW Operating Temperature: -55°C ~ 125°C (TJ) Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323	패키지: SC-76, SOD-323	재고150,000
LLSD103C-13	Diodes Incorporated	DIODE SCHOTTKY 20V 350MA MINMELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 350mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 10V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: Mini MELF Operating Temperature - Junction: -	패키지: DO-213AA	재고2,208
S1B-13	Diodes Incorporated	DIODE GEN PURP 100V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고181,356
DFLS240-7	Diodes Incorporated	DIODE SCHOTTKY 40V 2A POWERDI123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 40V Capacitance @ Vr, F: 28pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -65°C ~ 125°C	패키지: POWERDI?123	재고327,144
BAS70-06-7	Diodes Incorporated	DIODE ARRAY SCHOTTKY 70V SOT23-3 Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io) (per Diode): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 100nA @ 50V Operating Temperature - Junction: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,160
SBR30A100CT	Diodes Incorporated	DIODE ARRAY SBR 100V 15A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 800mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Operating Temperature - Junction: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고43,944
AP7312-1833W6-7	Diodes Incorporated	IC REG LINEAR 1.8V/3.3V SOT26 Output Configuration: Positive Output Type: Fixed Number of Regulators: 2 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 1.8V, 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.3V @ 150mA, 0.2V @ 150mA Current - Output: 150mA, 150mA Current - Quiescent (Iq): - Current - Supply (Max): 80µA PSRR: 65dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	패키지: SOT-23-6	재고105,984
ZRC250F03TC	Diodes Incorporated	IC VREF SHUNT 2.5V SOT23 Reference Type: Shunt Output Type: Fixed Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Current - Output: 5mA Tolerance: ±3% Temperature Coefficient: 90ppm/°C Noise - 0.1Hz to 10Hz: - Noise - 10Hz to 10kHz: 60µVrms Voltage - Input: - Current - Supply: - Current - Cathode: 20µA Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고5,808
ZRT062GC1TA	Diodes Incorporated	IC VREF SHUNT 6.17V SOT223 Reference Type: Shunt Output Type: Fixed Voltage - Output (Min/Fixed): 6.17V Voltage - Output (Max): - Current - Output: 50mA Tolerance: ±1% Temperature Coefficient: 50ppm/°C Noise - 0.1Hz to 10Hz: 50µVp-p Noise - 10Hz to 10kHz: - Voltage - Input: - Current - Supply: - Current - Cathode: 150µA Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고14,868
ZXMS6005N8Q-13	Diodes Incorporated	LOW SIDE INTELLIFET SO-8 Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,520
74AHC08S14-13	Diodes Incorporated	IC GATE AND 4CH 2-INP 14-SO Logic Type: AND Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 20µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5 V ~ 1.65 V Logic Level - High: 1.5 V ~ 3.85 V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 14-SO Package / Case: 14-SOIC (0.154", 3.90mm Width)	패키지: 14-SOIC (0.154", 3.90mm Width)	재고2,048
PT7C5036F1-2GWF	Diodes Incorporated	IC CLOCKING XO PLL: - Main Purpose: - Input: - Output: - Number of Circuits: - Ratio - Input:Output: - Differential - Input:Output: - Frequency - Max: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,160
TBZ363C7V0-7-F	Diodes Incorporated	TVS DIODE 4VWM SOT363 Type: Zener Unidirectional Channels: - Bidirectional Channels: 3 Voltage - Reverse Standoff (Typ): 4V Voltage - Breakdown (Min): - Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고201,600
AP9101CAK-BETRG1	Diodes Incorporated	MULTICELL BATT MANAGER SOT25 Function: Battery Protection Battery Chemistry: Lithium Ion/Polymer Number of Cells: 1 Fault Protection: Over Current, Over Voltage Interface: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-25	패키지: SC-74A, SOT-753	재고2,576
DMTH6009LPSQ-13	Diodes Incorporated	MOSFET N-CH 60V PWRDI5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	패키지: -	Request a Quote
DCX114YUQ-13R-F	Diodes Incorporated	PREBIAS TRANSISTOR SOT363 T&R 10 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote
B370-13-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 70 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote
DMN62D2UT-13	Diodes Incorporated	2N7002 FAMILY SOT523 T&R 10K FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 334mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	패키지: -	Request a Quote

DMP1022UFDF-7

Diodes Incorporated

MOSFET P-CH 12V 9.5A U-DFN2020-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48.3nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 2712pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2020-6 (Type F)
Package / Case: 6-UDFN Exposed Pad

패키지: 6-UDFN Exposed Pad

재고36,000

ZTX776

Diodes Incorporated

TRANS PNP 200V 1A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 30MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3

재고2,912

MMBTA28-7-F

Diodes Incorporated

TRANS NPN DARL 80V 0.5A SOT23-3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 300mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고265,680

ZXTP2008GTA

Diodes Incorporated

TRANS PNP 30V 5.5A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 5.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 210mV @ 500mA, 5.5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 3W
Frequency - Transition: 110MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고188,412

DCX53-13

Diodes Incorporated

TRANS PNP 80V 1A SOT89-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고173,016

FMMT618TA

Diodes Incorporated

TRANS NPN 20V 2.5A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Power - Max: 625mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,534,760

DDTC114GKA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SC59-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,688

DDTC114EE-7

Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고3,520

MMBZ5234BW-7

Diodes Incorporated

DIODE ZENER 6.2V 200MW SOT323

Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 4V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고29,394

ZMV930TA

Diodes Incorporated

DIODE VAR CAP 8.7PF 12V SOD-323

Capacitance @ Vr, F: 2.9pF @ 4V, 50MHz
Capacitance Ratio: -
Capacitance Ratio Condition: -
Voltage - Peak Reverse (Max): 12V
Diode Type: Single
Q @ Vr, F: 200 @ 4V, 50MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

재고16,236

1N5711WS-7

Diodes Incorporated

DIODE SCHOTTKY 70V 150MW SOD-323

Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 70V
Current - Max: 15mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): 150mW
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

재고150,000

LLSD103C-13

Diodes Incorporated

DIODE SCHOTTKY 20V 350MA MINMELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 350mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 5µA @ 10V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -

패키지: DO-213AA

재고2,208

S1B-13

Diodes Incorporated

DIODE GEN PURP 100V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고181,356

DFLS240-7

Diodes Incorporated

DIODE SCHOTTKY 40V 2A POWERDI123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 40V
Capacitance @ Vr, F: 28pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -65°C ~ 125°C

패키지: POWERDI?123

재고327,144

BAS70-06-7

Diodes Incorporated

DIODE ARRAY SCHOTTKY 70V SOT23-3

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Operating Temperature - Junction: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,160

SBR30A100CT

Diodes Incorporated

DIODE ARRAY SBR 100V 15A TO220AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고43,944

AP7312-1833W6-7

Diodes Incorporated

IC REG LINEAR 1.8V/3.3V SOT26

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 2
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.3V @ 150mA, 0.2V @ 150mA
Current - Output: 150mA, 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 80µA
PSRR: 65dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

패키지: SOT-23-6

재고105,984

ZRC250F03TC

Diodes Incorporated

IC VREF SHUNT 2.5V SOT23

Reference Type: Shunt
Output Type: Fixed
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Current - Output: 5mA
Tolerance: ±3%
Temperature Coefficient: 90ppm/°C
Noise - 0.1Hz to 10Hz: -
Noise - 10Hz to 10kHz: 60µVrms
Voltage - Input: -
Current - Supply: -
Current - Cathode: 20µA
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고5,808

ZRT062GC1TA

Diodes Incorporated

IC VREF SHUNT 6.17V SOT223

Reference Type: Shunt
Output Type: Fixed
Voltage - Output (Min/Fixed): 6.17V
Voltage - Output (Max): -
Current - Output: 50mA
Tolerance: ±1%
Temperature Coefficient: 50ppm/°C
Noise - 0.1Hz to 10Hz: 50µVp-p
Noise - 10Hz to 10kHz: -
Voltage - Input: -
Current - Supply: -
Current - Cathode: 150µA
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고14,868

ZXMS6005N8Q-13

Diodes Incorporated

LOW SIDE INTELLIFET SO-8

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,520

74AHC08S14-13

Diodes Incorporated

IC GATE AND 4CH 2-INP 14-SO

Logic Type: AND Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 20µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5 V ~ 1.65 V
Logic Level - High: 1.5 V ~ 3.85 V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SO
Package / Case: 14-SOIC (0.154", 3.90mm Width)

패키지: 14-SOIC (0.154", 3.90mm Width)

재고2,048

PT7C5036F1-2GWF

Diodes Incorporated

IC CLOCKING XO

PLL: -
Main Purpose: -
Input: -
Output: -
Number of Circuits: -
Ratio - Input:Output: -
Differential - Input:Output: -
Frequency - Max: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,160

TBZ363C7V0-7-F

Diodes Incorporated

TVS DIODE 4VWM SOT363

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 3
Voltage - Reverse Standoff (Typ): 4V
Voltage - Breakdown (Min): -
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고201,600

AP9101CAK-BETRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT25

Function: Battery Protection
Battery Chemistry: Lithium Ion/Polymer
Number of Cells: 1
Fault Protection: Over Current, Over Voltage
Interface: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: SC-74A, SOT-753
Supplier Device Package: SOT-25

패키지: SC-74A, SOT-753

재고2,576

DMTH6009LPSQ-13

Diodes Incorporated

MOSFET N-CH 60V PWRDI5060

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI5060-8
Package / Case: 8-PowerTDFN

패키지: -

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DCX114YUQ-13R-F

Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 10

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

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B370-13-F-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 70 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

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DMN62D2UT-13

Diodes Incorporated

2N7002 FAMILY SOT523 T&R 10K

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 334mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-523
Package / Case: SOT-523

패키지: -

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