Diodes Incorporated 제품

FN3270024

Diodes Incorporated

OSCILLATOR XO 32.768MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 32.768MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±25ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 25mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.071" (1.80mm)

패키지: 4-SMD, No Lead

ZVN4306GTC

Diodes Incorporated

MOSFET N-CH 60V 2.1A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

패키지: TO-261-4, TO-261AA

DMN2046U-13

Diodes Incorporated

MOSFET N-CH 20V 3.4A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 292pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 760mW (Ta)
• Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

DMG4710SSS-13

Diodes Incorporated

MOSFET N-CH 30V 12.7A 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1849pF @ 15V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 1.54W (Ta)
• Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

FZTA92TC

Diodes Incorporated

TRANS PNP 300V 0.5A SOT223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 250nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
• Power - Max: 2W
• Frequency - Transition: 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

BZX84C18-7

Diodes Incorporated

DIODE ZENER 18V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±6%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 12.6V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

1SMB5935B-13

Diodes Incorporated

DIODE ZENER 27V 3W SMB

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 23 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB

패키지: DO-214AA, SMB

N6075D

Diodes Incorporated

DIODE

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

SBR12M120P5-13

Diodes Incorporated

DIODE SB 120V 12A POWERDI5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 830mV @ 12A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 120V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI?5
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: PowerDI? 5

SBR1A20T5-7

Diodes Incorporated

DIODE SBR SOD523

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 15ns
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Capacitance @ Vr, F: 19pF @ 20V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: SC-79, SOD-523

SF163

Diodes Incorporated

DIODE ARRAY GP 150V 16A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 16A
• Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 150V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

SBR30A45CTB

Diodes Incorporated

DIODE ARRAY SBR 45V 15A TO263

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 45V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

GBJ2510-F

Diodes Incorporated

RECT BRIDGE GP 25A 1000V TH-HOLE

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

AP7201-1233FMG-7

Diodes Incorporated

IC REG LINEAR 1.2V/3.3V 6DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 2
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.2V, 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -, 0.15V @ 100mA
• Current - Output: 150mA, 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 45µA
• PSRR: 78dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-UFDFN Exposed Pad
• Supplier Device Package: 6-DFN2018 (2.0x1.8)

패키지: 6-UFDFN Exposed Pad

AP2114HA-3.3TRG1

Diodes Incorporated

IC REG LINEAR 3.3V 1A SOT223

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.75V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 90µA
• PSRR: 65dB (100Hz ~ 1kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

APX803L-24SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 2.4V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

AL8807MP-13

Diodes Incorporated

IC LED DRVR RGLTR DIM 1.3A 8MSOP

• Type: DC DC Regulator
• Topology: Step-Down (Buck)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 6V
• Voltage - Supply (Max): 36V
• Voltage - Output: -
• Current - Output / Channel: 1.3A (Switch)
• Frequency: 1MHz
• Dimming: Analog, PWM
• Applications: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
• Supplier Device Package: 8-MSOP-EP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad

PI5USB1468AZAE+CWX

Diodes Incorporated

USB SLEEP CHARGE W-DFN2020-8

• Function: -
• Battery Chemistry: -
• Number of Cells: -
• Fault Protection: -
• Interface: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

LM2903QM8-13

Diodes Incorporated

IC COMPARATOR DUAL DIFF MSOP-8

• Type: Differential
• Number of Elements: 2
• Output Type: -
• Voltage - Supply, Single/Dual (±): 2 V ~ 36 V, ±1 V ~ 18 V
• Voltage - Input Offset (Max): 2mV @ 5V
• Current - Input Bias (Max): 250nA @ 5V
• Current - Output (Typ): 16mA @ 5V
• Current - Quiescent (Max): 1.7mA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): -
• Hysteresis: -
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

PI3HDX511EZLSE

Diodes Incorporated

IC LEVEL SHIFTER 32TQFN

• Applications: HDMI Redriver, Level Shifter
• Interface: -
• Voltage - Supply: 3.3V
• Package / Case: 32-WFQFN Exposed Pad
• Supplier Device Package: 32-TQFN (3x6)
• Mounting Type: Surface Mount

패키지: 32-WFQFN Exposed Pad

SMBJ10A-13-F

Diodes Incorporated

TVS DIODE 10VWM 17VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 17V
• Current - Peak Pulse (10/1000µs): 35.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB

패키지: DO-214AA, SMB

AP7366-15SN-7

Diodes Incorporated

LDO CMOS HICURR U-DFN2020-6

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.7V @ 600mA
• Current - Output: 600mA
• Current - Quiescent (Iq): 80µA
• Current - Supply (Max): -
• PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2020-6

패키지: 6-UDFN Exposed Pad

BZX84B5V6Q-7-F

Diodes Incorporated

TIGHT TOLERANCE ZENER SOT23 T&R

• Voltage - Zener (Nom) (Vz): 5.6 V
• Tolerance: ±2%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 2 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: -

DMP31D1UFB4Q-7B

Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN1006-

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 15 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1006-3
• Package / Case: 3-XFDFN

패키지: -

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DMP2037U-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 1

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 800mW
• Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: -

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RS1MEWF-7

Diodes Incorporated

Rapid GPP Rectifier SOD123F T&R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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BC857CQ-7-F

Diodes Incorporated

TRANS PNP SOT23-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: -
• Frequency - Transition: 200MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: -

PDS3200-13-2477

Diodes Incorporated

DIODE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 780 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI™ 5
• Supplier Device Package: PowerDI™ 5
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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