페이지 475 - Diodes Incorporated 제품

부품 번호	제조업체	설명	패키지	재고
FZT600TC	Diodes Incorporated	TRANS NPN DARL 140V 2A SOT223 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 2W Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고7,712
LBN150B01-7	Diodes Incorporated	TRANS NPN/PNP 40V 0.2A SOT26 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	패키지: SOT-23-6	재고431,400
1N5225B-T	Diodes Incorporated	DIODE ZENER 3V 500MW DO35 Voltage - Zener (Nom) (Vz): 3V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 29 Ohms Current - Reverse Leakage @ Vr: 50µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	패키지: DO-204AH, DO-35, Axial	재고4,816
DDZ9691Q-13	Diodes Incorporated	DIODE ZENER 500MW SOD123 Voltage - Zener (Nom) (Vz): 6.2V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): - Current - Reverse Leakage @ Vr: 1µA @ 5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고4,912
D3Z3V6BF-7	Diodes Incorporated	DIODE ZENER 3.73V 400MW SOD323F Voltage - Zener (Nom) (Vz): 3.73V Tolerance: ±3% Power - Max: 400mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 5µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: SC-90, SOD-323F	재고36,000
BZT585B2V4T-7	Diodes Incorporated	DIODE ZENER 2.4V 350MW SOD523 Voltage - Zener (Nom) (Vz): 2.4V Tolerance: ±2% Power - Max: 350mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 50µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523	패키지: SC-79, SOD-523	재고5,600
BZX84C7V5S-7	Diodes Incorporated	DIODE ZENER ARRAY 7.5V SOT363 Configuration: 2 Independent Voltage - Zener (Nom) (Vz): 7.5V Tolerance: ±6% Power - Max: 200mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고21,912
ZC831BTA	Diodes Incorporated	DIODE VAR CAP 15PF 25V SOT23-3 Capacitance @ Vr, F: 15.75pF @ 2V, 1MHz Capacitance Ratio: 6 Capacitance Ratio Condition: C2/C20 Voltage - Peak Reverse (Max): 25V Diode Type: Single Q @ Vr, F: 300 @ 3V, 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고6,880
ZMV833ATC	Diodes Incorporated	DIODE VARACTOR 25V SOD323 Capacitance @ Vr, F: 36.3pF @ 2V, 1MHz Capacitance Ratio: 6.5 Capacitance Ratio Condition: C2/C20 Voltage - Peak Reverse (Max): 25V Diode Type: Single Q @ Vr, F: 200 @ 3V, 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323	패키지: SC-76, SOD-323	재고5,904
SD101BWS-7	Diodes Incorporated	DIODE SCHOTTKY 50V 15MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 15mA (DC) Voltage - Forward (Vf) (Max) @ If: 950mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 40V Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 125°C	패키지: SC-76, SOD-323	재고2,800
B350-13-F	Diodes Incorporated	DIODE SCHOTTKY 50V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AB, SMC	재고56,442
SBL1035CT	Diodes Incorporated	DIODE ARRAY SCHOTTKY 35V TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 35V Operating Temperature - Junction: -65°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고3,200
SBR10200CT	Diodes Incorporated	DIODE ARRAY SBR 200V 5A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 5A Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 100µA @ 200V Operating Temperature - Junction: -65°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고7,360
BAV23A-7	Diodes Incorporated	DIODE ARRAY GP 200V 400MA SOT23 Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 400mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Operating Temperature - Junction: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고6,256
AZ1085CS2-1.8TRG1	Diodes Incorporated	IC REG LINEAR 1.8V 3A TO263-2 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 12V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 1.5V @ 3A Current - Output: 3A Current - Quiescent (Iq): - Current - Supply (Max): 10mA PSRR: 72dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,504
PT7M6431CHTA3EX	Diodes Incorporated	IC SUPERVSOR 3.1V SOT23-3 Type: Simple Reset/Power-On Reset Number of Voltages Monitored: 1 Output: Push-Pull, Totem Pole Reset: Active High Reset Timeout: 120 ms Minimum Voltage - Threshold: 3.1V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,960
PI5C3257QE-2017	Diodes Incorporated	BUS SWITCH 5V NARROW QSOP-16 Type: - Circuit: - Independent Circuits: - Current - Output High, Low: - Voltage Supply Source: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,856
74LVC1G02FS3-7	Diodes Incorporated	IC GATE NOR 2INP X2DFN-4 Logic Type: NOR Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 1.65 V ~ 5.5 V Current - Quiescent (Max): 200µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: 0.7 V ~ 0.8 V Logic Level - High: 1.7 V ~ 2 V Max Propagation Delay @ V, Max CL: 1.7ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: X2-DFN0808-4 Package / Case: 4-XFDFN Exposed Pad	패키지: 4-XFDFN Exposed Pad	재고5,744
PI7C9X2G404ELZXAEX	Diodes Incorporated	IC PCIE PACKET SWITCH QFN Applications: Packet Switch, 4-Port/4-Lane Interface: PCI Express Voltage - Supply: - Package / Case: - Supplier Device Package: - Mounting Type: -	패키지: -	재고2,432
D5V0L4B5S-7	Diodes Incorporated	TVS DIODE 5VWM 14VC SOT353 Type: Zener Unidirectional Channels: - Bidirectional Channels: 4 Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 14V Current - Peak Pulse (10/1000µs): 6A (8/20µs) Power - Peak Pulse: 84W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SOT-353	패키지: 5-TSSOP, SC-70-5, SOT-353	재고5,832
DMP21D6UFD-7	Diodes Incorporated	MOSFET P-CH 20V 600MA 3DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 400mW Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DFN1212-3 Package / Case: 3-UDFN	패키지: -	재고62,661
74LVC3G17SS8-7	Diodes Incorporated	LOGICLVC3GATESSOP-8T&R3K Logic Type: Inverter Number of Elements: - Number of Bits per Element: - Input Type: - Output Type: - Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-LSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: 8-SSOP	패키지: -	재고9,000
DMTH47M2LPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	패키지: -	재고7,500
DMP1018UCB9-7	Diodes Incorporated	MOSFET P-CH 12V 7.6A U-WLB1515-9 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 6 V Vgs (Max): -6V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-WLB1515-9 Package / Case: 9-UFBGA, WLBGA	패키지: -	Request a Quote
RABF1510-13	Diodes Incorporated	BRIDGE RECT 1P 1KV 1.5A 4SOPA Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-SOPA	패키지: -	Request a Quote
DMN3009LFV-13	Diodes Incorporated	MOSFET N-CH 30V 60A POWERDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	패키지: -	Request a Quote
PI3HDX12211AZHEX	Diodes Incorporated	ACTIVE HDMI V-QFN3590-42 T&R 3.5 Type: Buffer, ReDriver Applications: HDMI, I2C Input: CML Output: CML Data Rate (Max): 12Gbps Number of Channels: 4 Delay Time: - Signal Conditioning: Input Equalization Capacitance - Input: - Voltage - Supply: 3V ~ 3.6V Current - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 42-VFQFN Exposed Pad Supplier Device Package: 42-TQFN (9x3.5)	패키지: -	재고10,470
DMN12M7UCA10-7	Diodes Incorporated	MOSFET 2N-CH 20.2A X4-DSN3015-10 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 20.2A (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: X4-DSN3015-10	패키지: -	재고14,910

FZT600TC

Diodes Incorporated

TRANS NPN DARL 140V 2A SOT223

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 2W
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고7,712

LBN150B01-7

Diodes Incorporated

TRANS NPN/PNP 40V 0.2A SOT26

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V / 32 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

패키지: SOT-23-6

재고431,400

1N5225B-T

Diodes Incorporated

DIODE ZENER 3V 500MW DO35

Voltage - Zener (Nom) (Vz): 3V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 29 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35

패키지: DO-204AH, DO-35, Axial

재고4,816

DDZ9691Q-13

Diodes Incorporated

DIODE ZENER 500MW SOD123

Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): -
Current - Reverse Leakage @ Vr: 1µA @ 5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

패키지: SOD-123

재고4,912

D3Z3V6BF-7

Diodes Incorporated

DIODE ZENER 3.73V 400MW SOD323F

Voltage - Zener (Nom) (Vz): 3.73V
Tolerance: ±3%
Power - Max: 400mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F

패키지: SC-90, SOD-323F

재고36,000

BZT585B2V4T-7

Diodes Incorporated

DIODE ZENER 2.4V 350MW SOD523

Voltage - Zener (Nom) (Vz): 2.4V
Tolerance: ±2%
Power - Max: 350mW
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523

패키지: SC-79, SOD-523

재고5,600

BZX84C7V5S-7

Diodes Incorporated

DIODE ZENER ARRAY 7.5V SOT363

Configuration: 2 Independent
Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: ±6%
Power - Max: 200mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고21,912

ZC831BTA

Diodes Incorporated

DIODE VAR CAP 15PF 25V SOT23-3

Capacitance @ Vr, F: 15.75pF @ 2V, 1MHz
Capacitance Ratio: 6
Capacitance Ratio Condition: C2/C20
Voltage - Peak Reverse (Max): 25V
Diode Type: Single
Q @ Vr, F: 300 @ 3V, 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고6,880

ZMV833ATC

Diodes Incorporated

DIODE VARACTOR 25V SOD323

Capacitance @ Vr, F: 36.3pF @ 2V, 1MHz
Capacitance Ratio: 6.5
Capacitance Ratio Condition: C2/C20
Voltage - Peak Reverse (Max): 25V
Diode Type: Single
Q @ Vr, F: 200 @ 3V, 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

재고5,904

SD101BWS-7

Diodes Incorporated

DIODE SCHOTTKY 50V 15MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 15mA (DC)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 200nA @ 40V
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 125°C

패키지: SC-76, SOD-323

재고2,800

B350-13-F

Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AB, SMC

재고56,442

SBL1035CT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 35V TO220AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 35V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고3,200

SBR10200CT

Diodes Incorporated

DIODE ARRAY SBR 200V 5A TO220AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 5A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고7,360

BAV23A-7

Diodes Incorporated

DIODE ARRAY GP 200V 400MA SOT23

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고6,256

AZ1085CS2-1.8TRG1

Diodes Incorporated

IC REG LINEAR 1.8V 3A TO263-2

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 12V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.5V @ 3A
Current - Output: 3A
Current - Quiescent (Iq): -
Current - Supply (Max): 10mA
PSRR: 72dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고7,504

PT7M6431CHTA3EX

Diodes Incorporated

IC SUPERVSOR 3.1V SOT23-3

Type: Simple Reset/Power-On Reset
Number of Voltages Monitored: 1
Output: Push-Pull, Totem Pole
Reset: Active High
Reset Timeout: 120 ms Minimum
Voltage - Threshold: 3.1V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,960

PI5C3257QE-2017

Diodes Incorporated

BUS SWITCH 5V NARROW QSOP-16

Type: -
Circuit: -
Independent Circuits: -
Current - Output High, Low: -
Voltage Supply Source: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,856

74LVC1G02FS3-7

Diodes Incorporated

IC GATE NOR 2INP X2DFN-4

Logic Type: NOR Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 1.65 V ~ 5.5 V
Current - Quiescent (Max): 200µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: 0.7 V ~ 0.8 V
Logic Level - High: 1.7 V ~ 2 V
Max Propagation Delay @ V, Max CL: 1.7ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN0808-4
Package / Case: 4-XFDFN Exposed Pad

패키지: 4-XFDFN Exposed Pad

재고5,744

PI7C9X2G404ELZXAEX

Diodes Incorporated

IC PCIE PACKET SWITCH QFN

Applications: Packet Switch, 4-Port/4-Lane
Interface: PCI Express
Voltage - Supply: -
Package / Case: -
Supplier Device Package: -
Mounting Type: -

패키지: -

재고2,432

D5V0L4B5S-7

Diodes Incorporated

TVS DIODE 5VWM 14VC SOT353

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 4
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Power - Peak Pulse: 84W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SOT-353

패키지: 5-TSSOP, SC-70-5, SOT-353

재고5,832

DMP21D6UFD-7

Diodes Incorporated

MOSFET P-CH 20V 600MA 3DFN

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 400mW
Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X1-DFN1212-3
Package / Case: 3-UDFN

패키지: -

재고62,661

74LVC3G17SS8-7

Diodes Incorporated

LOGICLVC3GATESSOP-8T&R3K

Logic Type: Inverter
Number of Elements: -
Number of Bits per Element: -
Input Type: -
Output Type: -
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-LSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: 8-SSOP

패키지: -

재고9,000

DMTH47M2LPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI5060-8 (Type UX)
Package / Case: 8-PowerTDFN

패키지: -

재고7,500

DMP1018UCB9-7

Diodes Incorporated

MOSFET P-CH 12V 7.6A U-WLB1515-9

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 6 V
Vgs (Max): -6V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-WLB1515-9
Package / Case: 9-UFBGA, WLBGA

패키지: -

Request a Quote

RABF1510-13

Diodes Incorporated

BRIDGE RECT 1P 1KV 1.5A 4SOPA

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-SOPA

패키지: -

Request a Quote

DMN3009LFV-13

Diodes Incorporated

MOSFET N-CH 30V 60A POWERDI3333

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN

패키지: -

Request a Quote

PI3HDX12211AZHEX

Diodes Incorporated

ACTIVE HDMI V-QFN3590-42 T&R 3.5

Type: Buffer, ReDriver
Applications: HDMI, I2C
Input: CML
Output: CML
Data Rate (Max): 12Gbps
Number of Channels: 4
Delay Time: -
Signal Conditioning: Input Equalization
Capacitance - Input: -
Voltage - Supply: 3V ~ 3.6V
Current - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 42-VFQFN Exposed Pad
Supplier Device Package: 42-TQFN (9x3.5)

패키지: -

재고10,470

DMN12M7UCA10-7

Diodes Incorporated

MOSFET 2N-CH 20.2A X4-DSN3015-10

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 20.2A (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: X4-DSN3015-10

패키지: -

재고14,910