페이지 493 - Diodes Incorporated 제품

부품 번호	제조업체	설명	패키지	재고
FL2500281	Diodes Incorporated	CRYSTAL 25.0000MHZ 18PF SMD Type: MHz Crystal Frequency: 25MHz Frequency Stability: ±50ppm Frequency Tolerance: ±20ppm Load Capacitance: 18pF ESR (Equivalent Series Resistance): 50 Ohm Operating Mode: Fundamental Operating Temperature: -20°C ~ 70°C Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Height - Seated (Max): 0.030" (0.75mm)	패키지: 4-SMD, No Lead	재고4,662
ZXMN3A01ZTA	Diodes Incorporated	MOSFET N-CH 30V 3.3A SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 186pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 970mW (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	패키지: TO-243AA	재고156,012
DMP2100UCB9-7	Diodes Incorporated	MOSFET 2P-CH 20V 3A 9UWLB FET Type: 2 P-Channel (Dual) Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-UFBGA, WLBGA Supplier Device Package: U-WLB1515-9	패키지: 9-UFBGA, WLBGA	재고103,860
DDTA114WKA-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SC59-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,304
DDTC144WCA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고144,000
BZX84C3V9W-7	Diodes Incorporated	DIODE ZENER 3.9V 200MW SOT323 Voltage - Zener (Nom) (Vz): 3.9V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 3µA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 125°C Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고7,840
MMBZ5233B-7	Diodes Incorporated	DIODE ZENER 6V 350MW SOT23-3 Voltage - Zener (Nom) (Vz): 6V Tolerance: ±5% Power - Max: 350mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 5µA @ 3.5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,904
BZX84C15W-7-F	Diodes Incorporated	DIODE ZENER 15V 200MW SOT323 Voltage - Zener (Nom) (Vz): 15V Tolerance: ±6% Power - Max: 200mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 100nA @ 10.5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 125°C Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고7,648
BZT585B8V2T-7	Diodes Incorporated	DIODE ZENER 8.2V 350MW SOD523 Voltage - Zener (Nom) (Vz): 8.2V Tolerance: ±2% Power - Max: 350mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 700nA @ 5V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523	패키지: SC-79, SOD-523	재고2,704
UF3006-T	Diodes Incorporated	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AD, Axial	재고4,784
B260AE-13	Diodes Incorporated	SCHOTTKY RECTIFIER SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고2,000
SDM1M40LP8-7	Diodes Incorporated	DIODE SCHOTTKY 40V 1A 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 660mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.4ns Current - Reverse Leakage @ Vr: 20µA @ 40V Capacitance @ Vr, F: 25pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 2-UFDFN Supplier Device Package: U-DFN1608-2 Operating Temperature - Junction: -65°C ~ 150°C	패키지: 2-UFDFN	재고3,424
MBR1535CT	Diodes Incorporated	DIODE ARRAY SCHOTTKY 35V TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Operating Temperature - Junction: -65°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고5,792
AP131-35WG-7	Diodes Incorporated	IC REG LINEAR 3.5V 300MA SOT25 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.5V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 100µA PSRR: 60dB (100Hz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-25	패키지: SC-74A, SOT-753	재고72,000
APX803L20-28SA-7	Diodes Incorporated	RESET GENERATOR SOT23 Type: Simple Reset/Power-On Reset Number of Voltages Monitored: 1 Output: Open Drain or Open Collector Reset: Active Low Reset Timeout: 143 ms Minimum Voltage - Threshold: 2.8V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,976
PI3CH800QE-2017	Diodes Incorporated	BUS SWITCH 3V QSOP-20 Type: - Circuit: - Independent Circuits: - Current - Output High, Low: - Voltage Supply Source: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,904
PI2PCIE2212ZHE	Diodes Incorporated	IC MUX/DEMUX 2X1 28TQFN Applications: PCIe Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: - Number of Channels: 2 On-State Resistance (Max): - Voltage - Supply, Single (V+): 1.5 V ~ 1.8 V Voltage - Supply, Dual (V±): - -3db Bandwidth: 3.8GHz Features: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 28-VFQFN Exposed Pad Supplier Device Package: 28-TQFN-EP (3.5x5.5)	패키지: 28-VFQFN Exposed Pad	재고7,152
P6SMAJ13ADF-13	Diodes Incorporated	TRANSIENTVOLTAGESUPPRESSORD-FLAT Type: - Unidirectional Channels: - Bidirectional Channels: - Voltage - Reverse Standoff (Typ): - Voltage - Breakdown (Min): - Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: - Applications: - Capacitance @ Frequency: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고96,360
AP7354D-28FS4-7	Diodes Incorporated	LDO CMOS LOWCURR X2-DFN1010-4 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.4V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): 0.6µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: X2-DFN1010-4 (Type B)	패키지: 4-XDFN Exposed Pad	재고5,024
AP7370-28Y-13	Diodes Incorporated	LDO CMOS LOWCURR SOT89 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 18V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 300mA Current - Quiescent (Iq): 2.5µA Current - Supply (Max): 300µA PSRR: - Control Features: - Protection Features: Over Current, Over Temperature, Reverse Current, Short Circuit Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고5,040
MMBT3906Q-7-F	Diodes Incorporated	GENERAL PURPOSE TRANSISTOR SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 310 mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	재고13,299
B0530W-7-G	Diodes Incorporated	DIODE SCHOTTKY 30V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 130 µA @ 30 V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C	패키지: -	Request a Quote
DXTN3C100PD-13	Diodes Incorporated	PWR LOW SAT TRANSISTOR POWERDI50 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V Power - Max: 1.47W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	패키지: -	재고7,440
GZ23C5V6-7	Diodes Incorporated	DIODE ZENER 5.6V 200MW SOT23 Voltage - Zener (Nom) (Vz): 5.6 V Tolerance: ±5.45% Power - Max: 200 mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote
DMTH43M7LFGQ-7-A	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	패키지: -	Request a Quote
S8M02600B	Diodes Incorporated	THYRISTOR TO220AB TUBE 50PCS Voltage - Off State: 600 V Voltage - Gate Trigger (Vgt) (Max): 1 V Current - Gate Trigger (Igt) (Max): 200 µA Voltage - On State (Vtm) (Max): 1.8 V Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): 8 A Current - Hold (Ih) (Max): 6 mA Current - Off State (Max): 10 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 80A @ 60Hz SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 110°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	재고450
AP7366EA-SN-7	Diodes Incorporated	IC REG LINEAR POS ADJ 600MA 6DFN Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 0.8V Voltage - Output (Max): 5V Voltage Dropout (Max): 0.85V @ 600mA Current - Output: 600mA Current - Quiescent (Iq): 80 µA Current - Supply (Max): - PSRR: 75dB ~ 55dB (1kHz ~ 10kHz) Control Features: Enable Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6	패키지: -	재고8,820
DMN32D0LVQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.68A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V Power - Max: 480mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote

FL2500281

Diodes Incorporated

CRYSTAL 25.0000MHZ 18PF SMD

Type: MHz Crystal
Frequency: 25MHz
Frequency Stability: ±50ppm
Frequency Tolerance: ±20ppm
Load Capacitance: 18pF
ESR (Equivalent Series Resistance): 50 Ohm
Operating Mode: Fundamental
Operating Temperature: -20°C ~ 70°C
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Height - Seated (Max): 0.030" (0.75mm)

패키지: 4-SMD, No Lead

재고4,662

ZXMN3A01ZTA

Diodes Incorporated

MOSFET N-CH 30V 3.3A SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 186pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 970mW (Ta)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

패키지: TO-243AA

재고156,012

DMP2100UCB9-7

Diodes Incorporated

MOSFET 2P-CH 20V 3A 9UWLB

FET Type: 2 P-Channel (Dual) Common Source
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLBGA
Supplier Device Package: U-WLB1515-9

패키지: 9-UFBGA, WLBGA

재고103,860

DDTA114WKA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,304

DDTC144WCA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고144,000

BZX84C3V9W-7

Diodes Incorporated

DIODE ZENER 3.9V 200MW SOT323

Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고7,840

MMBZ5233B-7

Diodes Incorporated

DIODE ZENER 6V 350MW SOT23-3

Voltage - Zener (Nom) (Vz): 6V
Tolerance: ±5%
Power - Max: 350mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 3.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,904

BZX84C15W-7-F

Diodes Incorporated

DIODE ZENER 15V 200MW SOT323

Voltage - Zener (Nom) (Vz): 15V
Tolerance: ±6%
Power - Max: 200mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 10.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고7,648

BZT585B8V2T-7

Diodes Incorporated

DIODE ZENER 8.2V 350MW SOD523

Voltage - Zener (Nom) (Vz): 8.2V
Tolerance: ±2%
Power - Max: 350mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 700nA @ 5V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523

패키지: SC-79, SOD-523

재고2,704

UF3006-T

Diodes Incorporated

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

재고4,784

B260AE-13

Diodes Incorporated

SCHOTTKY RECTIFIER SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고2,000

SDM1M40LP8-7

Diodes Incorporated

DIODE SCHOTTKY 40V 1A 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4ns
Current - Reverse Leakage @ Vr: 20µA @ 40V
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-UFDFN
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C

패키지: 2-UFDFN

재고3,424

MBR1535CT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 35V TO220AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고5,792

AP131-35WG-7

Diodes Incorporated

IC REG LINEAR 3.5V 300MA SOT25

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.5V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 100µA
PSRR: 60dB (100Hz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SOT-25

패키지: SC-74A, SOT-753

재고72,000

APX803L20-28SA-7

Diodes Incorporated

RESET GENERATOR SOT23

Type: Simple Reset/Power-On Reset
Number of Voltages Monitored: 1
Output: Open Drain or Open Collector
Reset: Active Low
Reset Timeout: 143 ms Minimum
Voltage - Threshold: 2.8V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,976

PI3CH800QE-2017

Diodes Incorporated

BUS SWITCH 3V QSOP-20

Type: -
Circuit: -
Independent Circuits: -
Current - Output High, Low: -
Voltage Supply Source: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,904

PI2PCIE2212ZHE

Diodes Incorporated

IC MUX/DEMUX 2X1 28TQFN

Applications: PCIe
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: -
Number of Channels: 2
On-State Resistance (Max): -
Voltage - Supply, Single (V+): 1.5 V ~ 1.8 V
Voltage - Supply, Dual (V±): -
-3db Bandwidth: 3.8GHz
Features: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 28-VFQFN Exposed Pad
Supplier Device Package: 28-TQFN-EP (3.5x5.5)

패키지: 28-VFQFN Exposed Pad

재고7,152

P6SMAJ13ADF-13

Diodes Incorporated

TRANSIENTVOLTAGESUPPRESSORD-FLAT

Type: -
Unidirectional Channels: -
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): -
Voltage - Breakdown (Min): -
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: -
Applications: -
Capacitance @ Frequency: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고96,360

AP7354D-28FS4-7

Diodes Incorporated

LDO CMOS LOWCURR X2-DFN1010-4

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.4V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): 0.6µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: X2-DFN1010-4 (Type B)

패키지: 4-XDFN Exposed Pad

재고5,024

AP7370-28Y-13

Diodes Incorporated

LDO CMOS LOWCURR SOT89

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 18V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 300mA
Current - Quiescent (Iq): 2.5µA
Current - Supply (Max): 300µA
PSRR: -
Control Features: -
Protection Features: Over Current, Over Temperature, Reverse Current, Short Circuit
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고5,040

MMBT3906Q-7-F

Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 310 mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

재고13,299

B0530W-7-G

Diodes Incorporated

DIODE SCHOTTKY 30V 500MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 130 µA @ 30 V
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C

패키지: -

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DXTN3C100PD-13

Diodes Incorporated

PWR LOW SAT TRANSISTOR POWERDI50

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Power - Max: 1.47W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

패키지: -

재고7,440

GZ23C5V6-7

Diodes Incorporated

DIODE ZENER 5.6V 200MW SOT23

Voltage - Zener (Nom) (Vz): 5.6 V
Tolerance: ±5.45%
Power - Max: 200 mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

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DMTH43M7LFGQ-7-A

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: POWERDI3333-8
Package / Case: 8-PowerVDFN

패키지: -

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S8M02600B

Diodes Incorporated

THYRISTOR TO220AB TUBE 50PCS

Voltage - Off State: 600 V
Voltage - Gate Trigger (Vgt) (Max): 1 V
Current - Gate Trigger (Igt) (Max): 200 µA
Voltage - On State (Vtm) (Max): 1.8 V
Current - On State (It (AV)) (Max): -
Current - On State (It (RMS)) (Max): 8 A
Current - Hold (Ih) (Max): 6 mA
Current - Off State (Max): 10 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A @ 60Hz
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 110°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: -

재고450

AP7366EA-SN-7

Diodes Incorporated

IC REG LINEAR POS ADJ 600MA 6DFN

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 5V
Voltage Dropout (Max): 0.85V @ 600mA
Current - Output: 600mA
Current - Quiescent (Iq): 80 µA
Current - Supply (Max): -
PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6

패키지: -

재고8,820

DMN32D0LVQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.68A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Power - Max: 480mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

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