페이지 514 - Diodes Incorporated 제품

부품 번호	제조업체	설명	패키지	재고
WT3253I0026.000000	Diodes Incorporated	OSC TCXO 26.000MHZ CLP SNWV SMD Type: TCXO Frequency: 26MHz Function: - Output: Clipped Sine Wave Voltage - Supply: 1.8V Frequency Stability: ±2ppm Operating Temperature: -30°C ~ 85°C Current - Supply (Max): 1.5mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Height - Seated (Max): 0.047" (1.20mm)	패키지: 4-SMD, No Lead	재고2,178
FN3680009	Diodes Incorporated	OSCILLATOR XO 36.864MHZ CMOS SMD Type: XO (Standard) Frequency: 36.864MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 3.3V Frequency Stability: ±50ppm Operating Temperature: -40°C ~ 85°C Current - Supply (Max): 25mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Height - Seated (Max): 0.071" (1.80mm)	패키지: 4-SMD, No Lead	재고5,454
JX7011D0104.000000	Diodes Incorporated	OSC XO 104.000MHZ CMOS SMD Type: XO (Standard) Frequency: 104MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 3.3V Frequency Stability: ±25ppm Operating Temperature: -40°C ~ 85°C Current - Supply (Max): 45mA Ratings: - Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Height - Seated (Max): 0.079" (2.00mm)	패키지: 6-SMD, No Lead	재고4,968
ZXMN6A25G	Diodes Incorporated	MOSFET N-CH 60V 4.8A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	패키지: TO-261-4, TO-261AA	재고7,760
ZXMN2A03E6TA	Diodes Incorporated	MOSFET N-CH 20V 3.6A SOT-23-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 837pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 7.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	패키지: SOT-23-6	재고1,627,668
DMC6040SSDQ-13	Diodes Incorporated	MOSFET N/P-CH 60V 5.1A 8SO FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 30V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V Power - Max: 1.24W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,064
DCP55-13	Diodes Incorporated	TRANS NPN 60V 1A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고30,000
ZTX751	Diodes Incorporated	TRANS PNP 60V 2A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 1W Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3	재고494,316
DFLZ39Q-7	Diodes Incorporated	DIODE ZENER POWERDI123 Voltage - Zener (Nom) (Vz): 39V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 5 Ohms Current - Reverse Leakage @ Vr: 1µA @ 30V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123	패키지: POWERDI?123	재고3,408
ZC836ATA	Diodes Incorporated	DIODE VAR CAP 100PF 25V SOT23-3 Capacitance @ Vr, F: 110pF @ 2V, 1MHz Capacitance Ratio: 6.5 Capacitance Ratio Condition: C2/C20 Voltage - Peak Reverse (Max): 25V Diode Type: Single Q @ Vr, F: 100 @ 3V, 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고5,648
GBJ3510-F	Diodes Incorporated	BRIDGE RECTIFIER GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 3.6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고2,512
AZ39151D5-5.0TRE1	Diodes Incorporated	IC REG LINEAR 5V 1.5A TO252-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 13.5V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.7V @ 1.5A Current - Output: 1.5A Current - Quiescent (Iq): - Current - Supply (Max): 10mA ~ 34mA PSRR: 65dB (120Hz) Control Features: Enable Protection Features: Over Current, Over Temperature, Reverse Polarity Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-252-6, DPak (5 Leads + Tab) Supplier Device Package: TO-252-5	패키지: TO-252-6, DPak (5 Leads + Tab)	재고6,992
AP7175SP-13	Diodes Incorporated	IC REG LINEAR POS ADJ 3A 8SO Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 3.65V Voltage - Output (Min/Fixed): 0.8V Voltage - Output (Max): 3.23V Voltage Dropout (Max): 0.42V @ 3A Current - Output: 3A Current - Quiescent (Iq): - Current - Supply (Max): 1.5mA PSRR: - Control Features: Enable, Power Good Protection Features: Over Current, Over Temperature, Power On Reset (POR), Short Circuit, Soft Start Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SO-EP	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고49,164
AP7361-33E-13	Diodes Incorporated	IC REG LINEAR 3.3V 1A SOT223 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.7V @ 1A Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): 90µA PSRR: 65dB ~ 45dB (1kHz ~ 10kHz) Control Features: - Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고273,414
AP2820EMM-G1	Diodes Incorporated	IC USB POWER SWITCH 8MSOP Switch Type: USB Switch Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 2.7 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.5A Rds On (Typ): 60 mOhm Input Type: Non-Inverting Features: Status Flag Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고6,240
PI3EQX1002BZLEX	Diodes Incorporated	IC REDRIVER USB 3.1 GEN-2 30TQFN Type: Buffer, ReDriver Applications: USB Input: CML Output: CML Data Rate (Max): 10Gbps Number of Channels: 1 Delay Time: - Signal Conditioning: Input Equalization Capacitance - Input: - Voltage - Supply: 3.3V Current - Supply: - Operating Temperature: 0°C ~ 70°C Mounting Type: - Package / Case: 30-WFQFN Exposed Pad Supplier Device Package: 30-TQFN (2.5x4.5)	패키지: 30-WFQFN Exposed Pad	재고6,704
PI5USB2544AZHE	Diodes Incorporated	IC USB HOST CONTROLLER 16TQFN Applications: - Multiplexer/Demultiplexer Circuit: - Switch Circuit: - Number of Channels: - On-State Resistance (Max): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): - -3db Bandwidth: - Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,104
PT7C5029C-5GWF	Diodes Incorporated	XOIC WAFER PLL: - Main Purpose: - Input: - Output: - Number of Circuits: - Ratio - Input:Output: - Differential - Input:Output: - Frequency - Max: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,112
PI3USB3200ZBBEX	Diodes Incorporated	USB3 SWITCH V-QFN4525-20 Applications: USB Multiplexer/Demultiplexer Circuit: 3:2 Switch Circuit: - Number of Channels: 3 On-State Resistance (Max): - Voltage - Supply, Single (V+): 2.7V ~ 4V Voltage - Supply, Dual (V±): - -3db Bandwidth: 7GHz Features: USB 2.0, USB 3.1 Operating Temperature: -40°C ~ 85°C Package / Case: 20-VFQFN Exposed Pad Supplier Device Package: 20-TQFN (2.5x4.5)	패키지: 20-VFQFN Exposed Pad	재고23,118
PI4GTL2002UEX	Diodes Incorporated	INTERFACE GTL 2.5K 8-MSOP Translator Type: Voltage Level Channel Type: Bidirectional Number of Circuits: 1 Channels per Circuit: 2 Voltage - VCCA: - Voltage - VCCB: - Input Signal: - Output Signal: - Output Type: Open Drain Data Rate: - Operating Temperature: -40°C ~ 85°C (TA) Features: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고20,610
BAS70LP-7B-79	Diodes Incorporated	DIODE SCHOTTKY 70V 70MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 70mA Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Current - Reverse Leakage @ Vr: 10 µA @ 70 V Capacitance @ Vr, F: 1pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote
DMN3066LVT-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 900mW Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	패키지: -	Request a Quote
ZXTN2005ZQTA	Diodes Incorporated	TRANS NPN 25V 5.5A SOT89-3 Transistor Type: NPN Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 150mA, 6.5A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V Power - Max: 1.5 W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: -	재고3,000
DMP4009SPSW-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 119W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	패키지: -	Request a Quote
DMN1021UCA4-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V X2-TSN0808- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 690mW Rds On (Max) @ Id, Vgs: 21mOhm @ 1.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-TSN0808-4 Package / Case: 4-XFDFN	패키지: -	Request a Quote
B260AE-13-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 60 V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
BZX84C36TQ-7-F	Diodes Incorporated	ZENER DIODE SOT523 T&R 3K Voltage - Zener (Nom) (Vz): 34 V Tolerance: ±2.94% Power - Max: 150 mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: -	Request a Quote
DMTH43M8LFG-13	Diodes Incorporated	MOSFET N-CH 40V PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	패키지: -	Request a Quote

WT3253I0026.000000

Diodes Incorporated

OSC TCXO 26.000MHZ CLP SNWV SMD

Type: TCXO
Frequency: 26MHz
Function: -
Output: Clipped Sine Wave
Voltage - Supply: 1.8V
Frequency Stability: ±2ppm
Operating Temperature: -30°C ~ 85°C
Current - Supply (Max): 1.5mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Height - Seated (Max): 0.047" (1.20mm)

패키지: 4-SMD, No Lead

재고2,178

FN3680009

Diodes Incorporated

OSCILLATOR XO 36.864MHZ CMOS SMD

Type: XO (Standard)
Frequency: 36.864MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Current - Supply (Max): 25mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Height - Seated (Max): 0.071" (1.80mm)

패키지: 4-SMD, No Lead

재고5,454

JX7011D0104.000000

Diodes Incorporated

OSC XO 104.000MHZ CMOS SMD

Type: XO (Standard)
Frequency: 104MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Current - Supply (Max): 45mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Height - Seated (Max): 0.079" (2.00mm)

패키지: 6-SMD, No Lead

재고4,968

ZXMN6A25G

Diodes Incorporated

MOSFET N-CH 60V 4.8A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

패키지: TO-261-4, TO-261AA

재고7,760

ZXMN2A03E6TA

Diodes Incorporated

MOSFET N-CH 20V 3.6A SOT-23-6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 837pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 55 mOhm @ 7.2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Package / Case: SOT-23-6

패키지: SOT-23-6

재고1,627,668

DMC6040SSDQ-13

Diodes Incorporated

MOSFET N/P-CH 60V 5.1A 8SO

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 30V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Power - Max: 1.24W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,064

DCP55-13

Diodes Incorporated

TRANS NPN 60V 1A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고30,000

ZTX751

Diodes Incorporated

TRANS PNP 60V 2A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 1W
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3

재고494,316

DFLZ39Q-7

Diodes Incorporated

DIODE ZENER POWERDI123

Voltage - Zener (Nom) (Vz): 39V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 5 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 30V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123

패키지: POWERDI?123

재고3,408

ZC836ATA

Diodes Incorporated

DIODE VAR CAP 100PF 25V SOT23-3

Capacitance @ Vr, F: 110pF @ 2V, 1MHz
Capacitance Ratio: 6.5
Capacitance Ratio Condition: C2/C20
Voltage - Peak Reverse (Max): 25V
Diode Type: Single
Q @ Vr, F: 100 @ 3V, 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고5,648

GBJ3510-F

Diodes Incorporated

BRIDGE RECTIFIER GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 3.6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고2,512

AZ39151D5-5.0TRE1

Diodes Incorporated

IC REG LINEAR 5V 1.5A TO252-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 13.5V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.7V @ 1.5A
Current - Output: 1.5A
Current - Quiescent (Iq): -
Current - Supply (Max): 10mA ~ 34mA
PSRR: 65dB (120Hz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-252-6, DPak (5 Leads + Tab)
Supplier Device Package: TO-252-5

패키지: TO-252-6, DPak (5 Leads + Tab)

재고6,992

AP7175SP-13

Diodes Incorporated

IC REG LINEAR POS ADJ 3A 8SO

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 3.65V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 3.23V
Voltage Dropout (Max): 0.42V @ 3A
Current - Output: 3A
Current - Quiescent (Iq): -
Current - Supply (Max): 1.5mA
PSRR: -
Control Features: Enable, Power Good
Protection Features: Over Current, Over Temperature, Power On Reset (POR), Short Circuit, Soft Start
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SO-EP

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고49,164

AP7361-33E-13

Diodes Incorporated

IC REG LINEAR 3.3V 1A SOT223

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.7V @ 1A
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): 90µA
PSRR: 65dB ~ 45dB (1kHz ~ 10kHz)
Control Features: -
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고273,414

AP2820EMM-G1

Diodes Incorporated

IC USB POWER SWITCH 8MSOP

Switch Type: USB Switch
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 2.7 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Rds On (Typ): 60 mOhm
Input Type: Non-Inverting
Features: Status Flag
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고6,240

PI3EQX1002BZLEX

Diodes Incorporated

IC REDRIVER USB 3.1 GEN-2 30TQFN

Type: Buffer, ReDriver
Applications: USB
Input: CML
Output: CML
Data Rate (Max): 10Gbps
Number of Channels: 1
Delay Time: -
Signal Conditioning: Input Equalization
Capacitance - Input: -
Voltage - Supply: 3.3V
Current - Supply: -
Operating Temperature: 0°C ~ 70°C
Mounting Type: -
Package / Case: 30-WFQFN Exposed Pad
Supplier Device Package: 30-TQFN (2.5x4.5)

패키지: 30-WFQFN Exposed Pad

재고6,704

PI5USB2544AZHE

Diodes Incorporated

IC USB HOST CONTROLLER 16TQFN

Applications: -
Multiplexer/Demultiplexer Circuit: -
Switch Circuit: -
Number of Channels: -
On-State Resistance (Max): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): -
-3db Bandwidth: -
Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,104

PT7C5029C-5GWF

Diodes Incorporated

XOIC WAFER

PLL: -
Main Purpose: -
Input: -
Output: -
Number of Circuits: -
Ratio - Input:Output: -
Differential - Input:Output: -
Frequency - Max: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,112

PI3USB3200ZBBEX

Diodes Incorporated

USB3 SWITCH V-QFN4525-20

Applications: USB
Multiplexer/Demultiplexer Circuit: 3:2
Switch Circuit: -
Number of Channels: 3
On-State Resistance (Max): -
Voltage - Supply, Single (V+): 2.7V ~ 4V
Voltage - Supply, Dual (V±): -
-3db Bandwidth: 7GHz
Features: USB 2.0, USB 3.1
Operating Temperature: -40°C ~ 85°C
Package / Case: 20-VFQFN Exposed Pad
Supplier Device Package: 20-TQFN (2.5x4.5)

패키지: 20-VFQFN Exposed Pad

재고23,118

PI4GTL2002UEX

Diodes Incorporated

INTERFACE GTL 2.5K 8-MSOP

Translator Type: Voltage Level
Channel Type: Bidirectional
Number of Circuits: 1
Channels per Circuit: 2
Voltage - VCCA: -
Voltage - VCCB: -
Input Signal: -
Output Signal: -
Output Type: Open Drain
Data Rate: -
Operating Temperature: -40°C ~ 85°C (TA)
Features: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고20,610

BAS70LP-7B-79

Diodes Incorporated

DIODE SCHOTTKY 70V 70MA 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70 V
Current - Average Rectified (Io): 70mA
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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DMN3066LVT-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 900mW
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSOT-26
Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: -

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ZXTN2005ZQTA

Diodes Incorporated

TRANS NPN 25V 5.5A SOT89-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 150mA, 6.5A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
Power - Max: 1.5 W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: -

재고3,000

DMP4009SPSW-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI5060-8 (Type UX)
Package / Case: 8-PowerTDFN

패키지: -

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DMN1021UCA4-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-TSN0808-

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 690mW
Rds On (Max) @ Id, Vgs: 21mOhm @ 1.8A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X2-TSN0808-4
Package / Case: 4-XFDFN

패키지: -

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B260AE-13-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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BZX84C36TQ-7-F

Diodes Incorporated

ZENER DIODE SOT523 T&R 3K

Voltage - Zener (Nom) (Vz): 34 V
Tolerance: ±2.94%
Power - Max: 150 mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: -

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DMTH43M8LFG-13

Diodes Incorporated

MOSFET N-CH 40V PWRDI3333

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: POWERDI3333-8
Package / Case: 8-PowerVDFN

패키지: -

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