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Diodes Incorporated 제품

기록 22,098
페이지  581/790
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FD2600030
Diodes Incorporated

OSCILLATOR XO 26.000MHZ CMOS SMD

  • Type: XO (Standard)
  • Frequency: 26MHz
  • Function: Enable/Disable
  • Output: CMOS
  • Voltage - Supply: 3.3V
  • Frequency Stability: ±50ppm
  • Operating Temperature: -40°C ~ 85°C
  • Current - Supply (Max): 15mA
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
  • Height - Seated (Max): 0.051" (1.30mm)
패키지: 4-SMD, No Lead
재고4,464
UX72F6214Z
Diodes Incorporated

OSC XO 156.25MHZ LVPECL SMD

  • Type: XO (Standard)
  • Frequency: 156.25MHz
  • Function: Enable/Disable
  • Output: LVPECL
  • Voltage - Supply: 3.3V
  • Frequency Stability: ±50ppm
  • Operating Temperature: -40°C ~ 85°C
  • Current - Supply (Max): 85mA
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
  • Height - Seated (Max): 0.061" (1.55mm)
패키지: 6-SMD, No Lead
재고3,240
hot ZXM64N035GTA
Diodes Incorporated

MOSFET N-CH 35V 6.7A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 6.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고317,796
DMG7N65SCT
Diodes Incorporated

MOSFET BVDSS: 501V 650V TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고7,920
DMN3020UFDF-7
Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1304pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.03W (Ta)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 4.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
패키지: 6-UDFN Exposed Pad
재고5,264
DMN10H700S-13
Diodes Incorporated

MOSFET NCH 100V 700MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: Standard
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고5,984
DMN2011UFDE-7
Diodes Incorporated

MOSFET N-CH 20V 11.7A UDFN2020-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 610mW (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type E)
  • Package / Case: 6-UDFN Exposed Pad
패키지: 6-UDFN Exposed Pad
재고79,518
UG3004-T
Diodes Incorporated

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-201AD, Axial
재고5,536
UG3003-T
Diodes Incorporated

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-201AD, Axial
재고2,864
B250AQ-13-F
Diodes Incorporated

DIODE SCHOTTKY 50V 2A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: 200pF @ 40V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-214AC, SMA
재고5,968
AP1084DL-U
Diodes Incorporated

IC REG LINEAR POS ADJ 5A TO252-3

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 12V
  • Voltage - Output (Min/Fixed): 1.25V
  • Voltage - Output (Max): 10.6V
  • Voltage Dropout (Max): 1.4V @ 5A
  • Current - Output: 5A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 10mA
  • PSRR: -
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,344
hot AP78L08YG-13
Diodes Incorporated

IC REG LINEAR 8V 100MA SOT89-3

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 23V
  • Voltage - Output (Min/Fixed): 8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 100mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 5.5mA
  • PSRR: 46dB (120Hz)
  • Control Features: -
  • Protection Features: Over Temperature, Short Circuit
  • Operating Temperature: -20°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
패키지: TO-243AA
재고732,000
hot AP130-15YL-13
Diodes Incorporated

IC REG LINEAR 1.5V 300MA SOT89-3

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.5V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 100µA
  • PSRR: 58dB (100Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
패키지: TO-243AA
재고168,276
AP3595FNTR-G1
Diodes Incorporated

IC REG CTRLR BUCK U-QFN4040-24

  • Output Type: Transistor Driver
  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Number of Outputs: 2
  • Output Phases: 2
  • Voltage - Supply (Vcc/Vdd): 10.8 V ~ 13.2 V
  • Frequency - Switching: 50kHz ~ 1MHz
  • Duty Cycle (Max): 40%
  • Synchronous Rectifier: Yes
  • Clock Sync: No
  • Serial Interfaces: -
  • Control Features: Enable, Frequency Control, Phase Control, Soft Start
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 24-VFQFN Exposed Pad
  • Supplier Device Package: U-QFN4040-24
패키지: 24-VFQFN Exposed Pad
재고4,144
PT8A3235PE
Diodes Incorporated

HEATER CONTROLLER PDIP-8

  • Applications: -
  • Current - Supply: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,408
74AVC1T45DW-7
Diodes Incorporated

IC TRANSCVR TRI-ST DL SPLY SOT36

  • Translator Type: Voltage Level
  • Channel Type: Bidirectional
  • Number of Circuits: 1
  • Channels per Circuit: 1
  • Voltage - VCCA: 1.2V ~ 3.6V
  • Voltage - VCCB: 1.2V ~ 3.6V
  • Input Signal: -
  • Output Signal: -
  • Output Type: Tri-State
  • Data Rate: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Features: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고2,256
PI3C3245QEX-2017
Diodes Incorporated

BUS SWITCH 3V QSOP-20

  • Type: -
  • Circuit: -
  • Independent Circuits: -
  • Current - Output High, Low: -
  • Voltage Supply Source: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,688
PI6C22405-1HWIEX
Diodes Incorporated

IC ZERO DELAY CLK BUFF 1:5 8SOIC

  • Type: -
  • PLL: Yes
  • Input: TTL
  • Output: TTL
  • Number of Circuits: 1
  • Ratio - Input:Output: 1:5
  • Differential - Input:Output: No/No
  • Frequency - Max: 220MHz
  • Divider/Multiplier: No/No
  • Voltage - Supply: 2.375 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,848
ZMY20TC
Diodes Incorporated

SENSOR LINEAR ANALOG SOT23-3

  • Type: Linear
  • Technology: Magnetoresistive
  • Axis: X, Y
  • Output Type: Analog Voltage
  • Sensing Range: -
  • Voltage - Supply: 12V
  • Current - Supply (Max): -
  • Current - Output (Max): -
  • Resolution: -
  • Bandwidth: -
  • Operating Temperature: -40°C ~ 150°C (TA)
  • Features: Internal Magnet
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고3,924
PT8A3294PEX
Diodes Incorporated

HEATER CONTROLLER DIP-8

  • Applications: Heating Controller
  • Current - Supply: -
  • Voltage - Supply: 3.5 V ~ 5.5 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,096
DSC08C065FP
Diodes Incorporated

SILICON CARBIDE RECTIFIER ITO-22

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 650 V
  • Capacitance @ Vr, F: 273pF @ 100mV, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC (Type WX)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고150
DMN90H8D5HCTI
Diodes Incorporated

MOSFET N-CH 900V 2.5A ITO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220AB
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
패키지: -
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ZTX857QSTZ
Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR EP3 AM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
  • Power - Max: 1.2 W
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
패키지: -
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RS5KP5-13
Diodes Incorporated

DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
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MMBT3906-7-F-79
Diodes Incorporated

IC TRANSISTOR ARRAY SMD

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
DMT35M7LFV-7
Diodes Incorporated

MOSFET N-CH 30V 76A POWERDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.98W (Ta)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8 (Type UX)
  • Package / Case: 8-PowerVDFN
패키지: -
재고6,000
MMSZ5246BQ-13-F
Diodes Incorporated

ZENER DIODE SOD123 T&R 10K

  • Voltage - Zener (Nom) (Vz): 16 V
  • Tolerance: ±5%
  • Power - Max: 370 mW
  • Impedance (Max) (Zzt): 17 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 12 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
패키지: -
재고30,000
SDM01U50CP3-7
Diodes Incorporated

DIODE SCHOT 50V 100MA X3WLB0603

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 50 V
  • Capacitance @ Vr, F: 7.5pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XDFN
  • Supplier Device Package: X3-WLB0603-2
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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