Diodes Incorporated 제품

GB1000015

Diodes Incorporated

CRYSTAL 10.0000MHZ 30PF TH

• Type: MHz Crystal
• Frequency: 10MHz
• Frequency Stability: ±30ppm
• Frequency Tolerance: ±30ppm
• Load Capacitance: 30pF
• ESR (Equivalent Series Resistance): 40 Ohm
• Operating Mode: Fundamental
• Operating Temperature: -20°C ~ 70°C
• Ratings: -
• Mounting Type: Through Hole
• Package / Case: HC49/US
• Size / Dimension: 0.441" L x 0.197" W (11.20mm x 5.00mm)
• Height - Seated (Max): 0.138" (3.50mm)

패키지: HC49/US

DMN2400UFD-7

Diodes Incorporated

MOSFET N-CH 20V 0.9A DFN1212-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 500nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 16V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 400mW (Ta)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 200mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X1-DFN1212-3
• Package / Case: 3-UDFN

패키지: 3-UDFN

2N7002E-7-F

Diodes Incorporated

MOSFET N-CH 60V 0.25A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 370mW (Ta)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

ZVN3310A

Diodes Incorporated

MOSFET N-CH 100V 200MA TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

패키지: TO-226-3, TO-92-3 (TO-226AA)

FMMT617TA

Diodes Incorporated

TRANS NPN 15V 3A SOT23-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 15V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 3A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
• Power - Max: 625mW
• Frequency - Transition: 120MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

ZTX694B

Diodes Incorporated

TRANS NPN 120V 0.5A E-LINE

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 200mA, 2V
• Power - Max: 1W
• Frequency - Transition: 130MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3
• Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3

ZXTD6717E6TC

Diodes Incorporated

TRANS NPN/PNP 15V/12V SOT23-6

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 1.5A, 1.25A
• Voltage - Collector Emitter Breakdown (Max): 15V, 12V
• Vce Saturation (Max) @ Ib, Ic: 245mV @ 20mA, 1.5A / 240mV @ 100mA, 1.25A
• Current - Collector Cutoff (Max): 10nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V / 200 @ 500mA, 2V
• Power - Max: 1.1W
• Frequency - Transition: 180MHz, 220MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

패키지: SOT-23-6

E9051

Diodes Incorporated

DIODE

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

SK36-7

Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Capacitance @ Vr, F: 300pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AB, SMC

SDT8A100P5-13

Diodes Incorporated

SCHOTTKY RECTIFIER PDI5

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI? 5
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: PowerDI? 5

AP131-29WG-7

Diodes Incorporated

IC REG LINEAR 2.9V 300MA SOT25

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 100µA
• PSRR: 60dB (100Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

패키지: SC-74A, SOT-753

AP7343D-20FS4-7B

Diodes Incorporated

IC REG LINEAR 2V 300MA 4DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.39V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4

패키지: 4-XDFN Exposed Pad

AZ7027RTR-E1

Diodes Incorporated

IC RESET GENERATOR

• Type: Voltage Detector
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active High/Active Low
• Reset Timeout: -
• Voltage - Threshold: 2.7V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

패키지: TO-243AA

APX809S00-26SR-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: 1 ms Minimum
• Voltage - Threshold: 2.63V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

ZNBG3210Q20TC

Diodes Incorporated

IC SW 3BIAS TONE H/V 2.2V 20QSOP

• Applications: Bias Controller
• Current - Supply: 25mA
• Voltage - Supply: 5 V ~ 10 V
• Operating Temperature: -40°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 20-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 20-QSOP

패키지: 20-SSOP (0.154", 3.90mm Width)

AH291-PG-B

Diodes Incorporated

IC MOTOR DRIVER ON/OFF SIP4L

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Low Side (2)
• Interface: On/Off
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Fan Motor Driver
• Current - Output: 400mA
• Voltage - Supply: 1.8 V ~ 5.75 V
• Voltage - Load: 1.8 V ~ 5.75 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP
• Supplier Device Package: 4-SIP

패키지: 4-SIP

AP3105VKTR-G1

Diodes Incorporated

IC PWM CTLR CURR MODE SOT23-6

• Output Isolation: Isolated
• Internal Switch(s): No
• Voltage - Breakdown: -
• Topology: Flyback
• Voltage - Start Up: 15.5V
• Voltage - Supply (Vcc/Vdd): 10 V ~ 25 V
• Duty Cycle: 75%
• Frequency - Switching: 65kHz
• Power (Watts): -
• Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
• Control Features: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-23-6
• Mounting Type: Surface Mount

패키지: SOT-23-6

74AUP1G00FW4-7

Diodes Incorporated

IC GATE NAND 1CH 2-INP 6-X2DFN

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 0.8 V ~ 3.6 V
• Current - Quiescent (Max): 0.5µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.7 V ~ 0.9 V
• Logic Level - High: 1.6 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1010-6
• Package / Case: 6-XFDFN

패키지: 6-XFDFN

PS391ESEEX

Diodes Incorporated

IC SWITCH QUAD SPST 16SOIC

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 45 Ohm
• Channel-to-Channel Matching (ΔRon): 500 mOhm
• Voltage - Supply, Single (V+): 3 V ~ 15 V
• Voltage - Supply, Dual (V±): ±3 V ~ 8 V
• Switch Time (Ton, Toff) (Max): 130ns, 75ns
• -3db Bandwidth: 100MHz
• Charge Injection: 3pC
• Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
• Current - Leakage (IS(off)) (Max): 100pA
• Crosstalk: -90dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

1.5KE75CA-B

Diodes Incorporated

TVS DIODE 64.1VWM 103VC DO201A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 64.1V
• Voltage - Breakdown (Min): 71.3V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 14.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201

패키지: DO-201AA, DO-27, Axial

S1MSP1M-7

Diodes Incorporated

DIODE GP 1KV 1A POWERDI123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.2 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: POWERDI®123
• Supplier Device Package: PowerDI™ 123
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

BAW56DW-7-F-79

Diodes Incorporated

DIODE GEN PURPOSE

• Diode Configuration: -
• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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PI5A23157UEX

Diodes Incorporated

ANALOG SWITCH 3V-5V MSOP-10 T&R

• Switch Circuit: SPDT - NO/NC
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 2
• On-State Resistance (Max): 15Ohm
• Channel-to-Channel Matching (ΔRon): 150mOhm
• Voltage - Supply, Single (V+): 1.65V ~ 5.5V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 12ns, 8ns
• -3db Bandwidth: 220MHz
• Charge Injection: 7pC
• Channel Capacitance (CS(off), CD(off)): 5.5pF
• Current - Leakage (IS(off)) (Max): 1µA
• Crosstalk: -66dB @ 10MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 10-MSOP

패키지: -

GBJ25L08

Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE GBJ TUB

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 25 A
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 12.5 A
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

패키지: -

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BAS40WQ-13-F

Diodes Incorporated

DIODE SCHOT 40V 200MA SOT323 10K

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 200 nA @ 30 V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

PI6C49CB04CQ2WEX

Diodes Incorporated

IC CLK BUFFER 1:4 160MHZ 8SOIC

• Type: Fanout Buffer (Distribution)
• Number of Circuits: 1
• Ratio - Input:Output: 1:4
• Differential - Input:Output: No/No
• Input: 3-State
• Output: 3-State
• Frequency - Max: 160 MHz
• Voltage - Supply: 1.425V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: -

DMP10H088SPS-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27.7 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 50 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta)
• Rds On (Max) @ Id, Vgs: 83mOhm @ 4.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI5060-8 (Type UX)
• Package / Case: 8-PowerTDFN

패키지: -

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DDZ9717-7-79

Diodes Incorporated

DIODE ZENER 43V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 43 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 50 nA @ 32.6 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: -

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