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Diodes Incorporated 제품

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페이지  631/790
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ZVN4310ASTZ
Diodes Incorporated

MOSFET N-CH 100V 0.9A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 850mW (Ta)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: E-Line (TO-92 compatible)
  • Package / Case: E-Line-3
패키지: E-Line-3
재고4,016
hot ZVN2106GTC
Diodes Incorporated

MOSFET N-CH 60V 0.71A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 710mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고120,012
hot DMN3024LSS-13
Diodes Incorporated

MOSFET N-CH 30V 6.4A 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고149,232
FMMT620TC
Diodes Incorporated

TRANS NPN 80V 1.5A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1.5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 160MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고4,752
hot MMDT3904V-7
Diodes Incorporated

TRANS 2NPN 40V 0.2A SOT563

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고1,453,488
DDZ9697Q-7
Diodes Incorporated

DIODE ZENER SOD123

  • Voltage - Zener (Nom) (Vz): 10V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): -
  • Current - Reverse Leakage @ Vr: 100nA @ 7.6V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
패키지: SOD-123
재고5,424
AZ23C4V7-7
Diodes Incorporated

DIODE ZENER ARRAY 4.7V SOT23-3

  • Configuration: 1 Pair Common Anode
  • Voltage - Zener (Nom) (Vz): 4.7V
  • Tolerance: ±5%
  • Power - Max: 300mW
  • Impedance (Max) (Zzt): 78 Ohms
  • Current - Reverse Leakage @ Vr: -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고6,432
BZX84C27S-7-F
Diodes Incorporated

DIODE ZENER ARRAY 27V SOT363

  • Configuration: 2 Independent
  • Voltage - Zener (Nom) (Vz): 27V
  • Tolerance: ±6%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 18.9V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고5,008
UF5A400D1
Diodes Incorporated

DIODE GEN PURP 400V 5A TO252-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 50pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-3
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,312
B140Q-13-F
Diodes Incorporated

DIODE SCHOTTKY 40V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-214AC, SMA
재고3,792
hot AP7215-33SG-13
Diodes Incorporated

IC REG LINEAR 3.3V 600MA 8SOP

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.25V @ 100mA
  • Current - Output: 600mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 80µA
  • PSRR: 55dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고39,852
AZ431LBKTR-G1
Diodes Incorporated

IC VREF SHUNT ADJ SOT25

  • Reference Type: Shunt
  • Output Type: Adjustable
  • Voltage - Output (Min/Fixed): 1.24V
  • Voltage - Output (Max): 18V
  • Current - Output: 100mA
  • Tolerance: ±1%
  • Temperature Coefficient: 20ppm/°C Typical
  • Noise - 0.1Hz to 10Hz: -
  • Noise - 10Hz to 10kHz: -
  • Voltage - Input: -
  • Current - Supply: -
  • Current - Cathode: 80µA
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-23-5
패키지: SC-74A, SOT-753
재고7,472
PT8A3301AWE
Diodes Incorporated

HEATER CONTROLLER SO-8

  • Applications: -
  • Current - Supply: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,472
PI3C3245QE-2017
Diodes Incorporated

BUS SWITCH 3V QSOP-20

  • Type: -
  • Circuit: -
  • Independent Circuits: -
  • Current - Output High, Low: -
  • Voltage Supply Source: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,664
PI74LCX16374AE
Diodes Incorporated

IC D-TYPE POS TRG DUAL 48TSSOP

  • Function: Standard
  • Type: D-Type
  • Output Type: Tri-State, Non-Inverted
  • Number of Elements: 2
  • Number of Bits per Element: 8
  • Clock Frequency: 170MHz
  • Max Propagation Delay @ V, Max CL: 6.2ns @ 3.3V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 2 V ~ 3.6 V
  • Current - Quiescent (Iq): 10µA
  • Input Capacitance: 3pF
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.240", 6.10mm Width)
패키지: 48-TFSOP (0.240", 6.10mm Width)
재고6,256
PI6C2501AWE
Diodes Incorporated

IC PLL CLOCK DRIVER 8-SOIC

  • Type: PLL Clock Driver
  • PLL: Yes with Bypass
  • Input: CMOS
  • Output: CMOS
  • Number of Circuits: 1
  • Ratio - Input:Output: 1:1
  • Differential - Input:Output: No/No
  • Frequency - Max: 134MHz
  • Divider/Multiplier: No/No
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,224
SMCJ8.0A-13
Diodes Incorporated

TVS DIODE 8VWM 13.6VC SMC

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 8V
  • Voltage - Breakdown (Min): 8.89V
  • Voltage - Clamping (Max) @ Ipp: 13.6V
  • Current - Peak Pulse (10/1000µs): 110.3A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
패키지: DO-214AB, SMC
재고3,708
PI7C9X20505GPBEVB
Diodes Incorporated

PI7C9X20505GPB EVAL BOARD

  • Applications: -
  • Interface: -
  • Voltage - Supply: -
  • Package / Case: -
  • Supplier Device Package: -
  • Mounting Type: -
패키지: -
재고2,336
BSS138WQ-13-F
Diodes Incorporated

BSS FAMILY SOT323 T&R 10K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
패키지: -
Request a Quote
G40H100CTFW
Diodes Incorporated

DIODE ARR SCHOTT 100V ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
패키지: -
재고120
BCV47TC
Diodes Incorporated

TRANSISTOR DARL NPN SOT23-3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 330 mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고59,994
DMN3732UFB4-7B
Diodes Incorporated

MOSFET BVDSS: 25V~30V X2-DFN1006

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 490mW (Ta)
  • Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1006-3
  • Package / Case: 3-XFDFN
패키지: -
Request a Quote
PI3EQX2024ZTFEX
Diodes Incorporated

USB3 EQX U-QFN2545-34 T&R 3.5K

  • Type: Buffer, ReDriver
  • Applications: USB
  • Input: CML
  • Output: CML
  • Data Rate (Max): 10Gbps
  • Number of Channels: 4
  • Delay Time: -
  • Signal Conditioning: Input Equalization
  • Capacitance - Input: -
  • Voltage - Supply: 3V ~ 3.6V
  • Current - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-UFQFN Exposed Pad
  • Supplier Device Package: 34-UTQFN (2.5x4.5)
패키지: -
재고10,431
DMP26M1UFG-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V POWERDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.67W (Ta), 3W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
패키지: -
Request a Quote
APT13003DU-E1
Diodes Incorporated

TRANS NPN DARL 450V 1.5A TO126

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 450 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
  • Power - Max: 1.1 W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
패키지: -
Request a Quote
ZXMS82120S14P-13
Diodes Incorporated

HIGH SIDE INTELLIFET SO-14EP T&R

  • Switch Type: General Purpose
  • Number of Outputs: 2
  • Ratio - Input:Output: 2 x 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: Logic
  • Voltage - Load: 5V ~ 28V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2.5A
  • Rds On (Typ): 100mOhm
  • Input Type: Non-Inverting
  • Features: Slew Rate Controlled
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 14-SO-EP
패키지: -
Request a Quote
DMN10H6D2LFDB-13
Diodes Incorporated

MOSFET 2N-CH 100V 0.27A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
패키지: -
Request a Quote
DMC2710UV-7
Diodes Incorporated

MOSFET N/P-CH 20V 1.1A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
  • Power - Max: 460mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: -
재고25,704