Diodes Incorporated 제품

G43270025

Diodes Incorporated

CRYSTAL 32.768KHZ 12.5PF SMD

• Type: kHz Crystal (Tuning Fork)
• Frequency: 32.768kHz
• Frequency Stability: -
• Frequency Tolerance: ±20ppm
• Load Capacitance: 12.5pF
• ESR (Equivalent Series Resistance): 50 kOhm
• Operating Mode: Fundamental
• Operating Temperature: -40°C ~ 85°C
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SOJ, 5.50mm pitch
• Size / Dimension: 0.311" L x 0.150" W (7.90mm x 3.80mm)
• Height - Seated (Max): 0.102" (2.60mm)

패키지: 4-SOJ, 5.50mm pitch

DMN10H220LE-13

Diodes Incorporated

MOSFET N-CH 100V 2.3A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 401pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

패키지: TO-261-4, TO-261AA

DSS5320T-7

Diodes Incorporated

TRANS PNP 20V 2A SOT23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
• Power - Max: 600mW
• Frequency - Transition: 180MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

BC847AW-7-F

Diodes Incorporated

TRANS NPN 45V 0.1A SC70-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 20nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

ZMV832BTC

Diodes Incorporated

DIODE VARACTOR 25V SOD323

• Capacitance @ Vr, F: 23.1pF @ 2V, 1MHz
• Capacitance Ratio: 6.5
• Capacitance Ratio Condition: C2/C20
• Voltage - Peak Reverse (Max): 25V
• Diode Type: Single
• Q @ Vr, F: 200 @ 3V, 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

ZDC833ATC

Diodes Incorporated

DIODE VAR CAP DUAL 33PF SOT23-3

• Capacitance @ Vr, F: 36.3pF @ 2V, 1MHz
• Capacitance Ratio: 6.5
• Capacitance Ratio Condition: C2/C20
• Voltage - Peak Reverse (Max): 25V
• Diode Type: 1 Pair Common Cathode
• Q @ Vr, F: 200 @ 3V, 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

KBJ608G

Diodes Incorporated

RECT BRIDGE GPP 6A 800V KBJ

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBJ
• Supplier Device Package: KBJ

패키지: 4-SIP, KBJ

AP7333-25SRG-7

Diodes Incorporated

IC REG LINEAR 2.5V 300MA SOT23R

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.55V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 75µA ~ 85µA
• PSRR: 65dB (100Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT23R

패키지: TO-236-3, SC-59, SOT-23-3

APX803S00-31SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 1 ms Minimum
• Voltage - Threshold: 3.08V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

APX803L20-19SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 143 ms Minimum
• Voltage - Threshold: 1.9V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

AP9101CK6-CGTRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT26

• Function: -
• Battery Chemistry: -
• Number of Cells: -
• Fault Protection: -
• Interface: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

AUR9807DIGD

Diodes Incorporated

IC BATT CHRGR LI-ION SGL 20QFN

• Battery Chemistry: Lithium-Ion
• Number of Cells: 1
• Current - Charging: Constant - Programmable
• Programmable Features: Timer
• Fault Protection: Over Temperature, Over Voltage, Reverse Current, Short Circuit
• Charge Current - Max: 1.5A
• Battery Pack Voltage: 4.2V
• Voltage - Supply (Max): 5.5V
• Interface: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 20-WFQFN Exposed Pad
• Supplier Device Package: 20-QFN (4.5x3.5)

패키지: 20-WFQFN Exposed Pad

PI4MSD5V9545CLEX

Diodes Incorporated

IC BUS SWITCH 4CH 20TSSOP

• Type: Bus Switch
• Circuit: 2 x 1:4
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PAM8902AZER

Diodes Incorporated

IC AMP AUD 30VPP CLASS D 16WCSP

• Type: Class D
• Output Type: 1-Channel (Mono)
• Max Output Power x Channels @ Load: -
• Voltage - Supply: 2.7 V ~ 5.5 V
• Features: Short-Circuit and Thermal Protection
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Supplier Device Package: 16-CSP (1.95x1.95)
• Package / Case: 16-WFBGA, WLCSP

패키지: 16-WFBGA, WLCSP

PI6C22409-1HWE

Diodes Incorporated

IC ZERO DELY CLK BUFF 1:9 16SOIC

• Type: -
• PLL: Yes with Bypass
• Input: TTL
• Output: TTL
• Number of Circuits: 1
• Ratio - Input:Output: 1:9
• Differential - Input:Output: No/No
• Frequency - Max: 220MHz
• Divider/Multiplier: No/No
• Voltage - Supply: 2.375 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

SMCJ17CA-13

Diodes Incorporated

TVS DIODE 17VWM 27.6VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 27.6V
• Current - Peak Pulse (10/1000µs): 53.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC

패키지: DO-214AB, SMC

ATS276H-PG-B-B

Diodes Incorporated

MAGNETIC SWITCH LATCH 4SDIP

• Function: Latch
• Technology: Hall Effect
• Polarization: Unidirectional
• Sensing Range: 7mT Trip, -7mT Release
• Test Condition: 25°C
• Voltage - Supply: 3.5 V ~ 20 V
• Current - Supply (Max): 25mA
• Current - Output (Max): -
• Output Type: Open Collector
• Features: -
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 4-SIP
• Supplier Device Package: 4-SDIP

패키지: 4-SIP

PT7C6035ALC-5GWF

Diodes Incorporated

XO CLOCK

• Logic Type: -
• Supply Voltage: -
• Number of Bits: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PT7M8216B25XZE

Diodes Incorporated

IC REG LINEAR 2.5V 300MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.18V @ 150mA (Typ)
• Current - Output: 300mA
• Current - Quiescent (Iq): 65µA
• Current - Supply (Max): -
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 4-UDFN (1x1)

패키지: 4-XDFN Exposed Pad

PT7C4363BZEEX

Diodes Incorporated

REALTIMECLOCKI2C W-DFN2030-8

• Type: Clock/Calendar
• Features: Alarm, Leap Year, Square Wave Output
• Memory Size: -
• Time Format: HH:MM:SS (24 hr)
• Date Format: YY-MM-DD-dd
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 1.3 V ~ 5.5 V
• Voltage - Supply, Battery: -
• Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WFDFN Exposed Pad
• Supplier Device Package: 8-TDFN (2x3)

패키지: 8-WFDFN Exposed Pad

DMN2310UWQ-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT323 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 450mW (Ta)
• Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

패키지: -

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MJD44H11Q-13

Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR TO252

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 8 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (Max): 1µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
• Power - Max: 1.5 W
• Frequency - Transition: 3MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)

패키지: -

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DCX143ZU-13R-F

Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 10

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

패키지: -

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DMN3060LWQ-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT323 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

패키지: -

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DMTH45M5SFVWQ-7

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.5W (Ta), 51W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI3333-8 (SWP) Type UX
• Package / Case: 8-PowerVDFN

패키지: -

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DMT4001LPS-13

Diodes Incorporated

MOSFET N-CH 40V 100A PWRDI5060-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.6W
• Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8 (Type K)
• Package / Case: 8-PowerTDFN

패키지: -

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DMP3056LSDQ-13

Diodes Incorporated

MOSFET 2P-CH 30V 6.9A 8SO

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
• Power - Max: 2.5W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

패키지: -

DMTH4002SCTBQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V TO263 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
• Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263AB (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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