페이지 11 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
페이지  11/271
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설명
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재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
3N258-E4/72
Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 800V 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고5,984
Standard
800V
2A
1.1V @ 3.14A
5µA @ 800V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
CBR6-040
Central Semiconductor Corp

RECT BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, CM
  • Supplier Device Package: CM
패키지: 4-Square, CM
재고2,864
Standard
400V
6A
1.1V @ 3A
10µA @ 400V
-65°C ~ 150°C (TJ)
Through Hole
4-Square, CM
CM
hot KBU4J
Fairchild/ON Semiconductor

IC BRIDGE RECT 4A 600V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
패키지: 4-SIP, KBU
재고56,232
Standard
600V
4A
1V @ 4A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
hot 2KBP10M
Fairchild/ON Semiconductor

DIODE BRIDGE 1000V 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고4,384
Standard
1000V
2A
1.1V @ 3.14A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
RS403L
Diodes Incorporated

RECT BRIDGE GPP 200V 4A RS-4L

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RS-4L
  • Supplier Device Package: RS-4L
패키지: 4-SIP, RS-4L
재고7,952
Standard
200V
4A
1V @ 3A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, RS-4L
RS-4L
VUO28-08NO7
IXYS

RECT BRIDGE 3PH 800V ECO-PAC1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 28A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Current - Reverse Leakage @ Vr: 300µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC1
  • Supplier Device Package: ECO-PAC1
패키지: ECO-PAC1
재고7,648
Standard
800V
28A
1.2V @ 10A
300µA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
ECO-PAC1
ECO-PAC1
KBU6A-E4/51
Vishay Semiconductor Diodes Division

DIODE 6A 50V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
패키지: 4-SIP, KBU
재고3,040
Standard
50V
6A
1V @ 6A
5µA @ 50V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
KBPC2510W
GeneSiC Semiconductor

DIODE BRIDGE 1000V 25A KBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-W
  • Supplier Device Package: KBPC-W
패키지: 4-Square, KBPC-W
재고5,472
Standard
1000V
25A
1.1V @ 12.5A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, KBPC-W
KBPC-W
GBJ2506-G-05
Comchip Technology

RECTIFIER BRIDGE 25A 600V GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: 4-SIP, GBJ
재고4,560
Standard
600V
25A
1V @ 12.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
BU1206-M3/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 12A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
패키지: 4-SIP, BU
재고4,016
Standard
600V
12A
1.05V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
GBL02-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 200V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고6,752
Standard
200V
3A
1.1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
B4M-E3/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 0.5A 400V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 500mA
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.500", 12.70mm)
  • Supplier Device Package: MBM
패키지: 4-DIP (0.500", 12.70mm)
재고7,376
Standard
400V
500mA
1V @ 500mA
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.500", 12.70mm)
MBM
MB2S-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 0.5A TO269AA

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: TO-269AA (MBS)
패키지: TO-269AA, 4-BESOP
재고30,438
Standard
200V
500mA
1V @ 400mA
5µA @ 200V
-55°C ~ 150°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
TO-269AA (MBS)
GBU25H08-M3-P
Vishay General Semiconductor - Diodes Division

SLGPP 800V IN GBU PACKAGE. INDUS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 4.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
재고30
Standard
800 V
4.5 A
1.05 V @ 12.5 A
10 µA @ 800 V
-55°C ~ 175°C (TJ)
Through Hole
4-SIP, GBU
GBU
HDBLS107G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 1A DBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
패키지: -
재고9,000
Standard
1 kV
1 A
1.7 V @ 1 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
GBLA005
Taiwan Semiconductor Corporation

DIODE BRIDGE 4A 50V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
Request a Quote
Standard
50 V
3 A
1 V @ 4 A
5 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
RDBF254-13
Diodes Incorporated

BRIDGE RECTIFIER DBF T&R 3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 2.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: DBF
패키지: -
Request a Quote
Standard
400 V
2.5 A
1.3 V @ 2.5 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Leads
DBF
MSCDC100H170AG
Microchip Technology

PM-DIODE-SIC-SBD-SP6C

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 1.7 kV
  • Current - Average Rectified (Io): 100 A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
  • Current - Reverse Leakage @ Vr: 400 µA @ 1700 V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6
패키지: -
Request a Quote
Silicon Carbide Schottky
1.7 kV
100 A
1.8 V @ 100 A
400 µA @ 1700 V
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6
TS240S-AU_R1_000A1
Panjit International Inc.

MICRO SURFACE MOUNT SCHOTTKY BRI

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 40 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Current - Reverse Leakage @ Vr: 50 µA @ 40 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-MicroDIP/SMD
패키지: -
Request a Quote
Schottky
40 V
2 A
500 mV @ 2 A
50 µA @ 40 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-MicroDIP/SMD
RPMS210_R2_00601
Panjit International Inc.

M4 PACKAGE,SURFACE MOUNT GLASS P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: M4
패키지: -
재고26,685
Standard
1 kV
2 A
1.3 V @ 1 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
M4
GBV15M
Diotec Semiconductor

BRIDGE 1-PH GBU 1000V 15A 150C

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 10.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
1 kV
10.5 A
1.1 V @ 7.5 A
5 µA @ 1000 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
BR3506-G
Comchip Technology

BRIDGE RECT 1PHASE 600V 35A BR

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-UFBGA, WLCSP
  • Supplier Device Package: 16-WLCSP (1.41x1.41)
패키지: -
Request a Quote
Standard
600 V
35 A
1.1 V @ 17.5 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Surface Mount
16-UFBGA, WLCSP
16-WLCSP (1.41x1.41)
DF02ST-HF
Comchip Technology

BRIDGE RECT 1PHASE 200V 1A DFS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DFS
패키지: -
Request a Quote
Standard
200 V
1 A
1.1 V @ 1 A
10 µA @ 200 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DFS
UG6KB40
SMC Diode Solutions

BRIDGE RECT 1PHASE 400V 6A D3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: D3K
패키지: -
Request a Quote
Standard
400 V
6 A
1.1 V @ 6 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
D3K
DF100AA160
SanRex Corporation

DIODE MODULE 1600V 100A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 100 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 A
  • Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
재고57
Standard
1.6 kV
100 A
1.2 V @ 100 A
15 mA @ 1600 V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
VS-130MT160C
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 3P 1.6KV 130A MTC

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 130 A
  • Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 300 A
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MTC
  • Supplier Device Package: MTC
패키지: -
Request a Quote
Standard
1.6 kV
130 A
2.05 V @ 300 A
-
-40°C ~ 150°C (TJ)
Chassis Mount
MTC
MTC
GBU8DL-6903E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 200V 3.9A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 3.9 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
200 V
3.9 A
1 V @ 8 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBP151G-C2
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 50V 1.5A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
패키지: -
Request a Quote
Standard
50 V
1.5 A
1.1 V @ 1.5 A
10 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP