페이지 123 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CBR35-010P	Central Semiconductor Corp	RECT BRIDGE 25A 100V 4CASE FP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 12.5A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, FP Supplier Device Package: 4-Case FP	패키지: 4-Square, FP	재고2,768	Standard	1000V	25A	1.2V @ 12.5A	10µA @ 100V	-65°C ~ 150°C (TJ)	QC Terminal	4-Square, FP	4-Case FP
MSDM50-18	Microsemi Corporation	MOD BRIDGE 3PH 1800V 50A M2-1 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1800V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: M2-1	패키지: Module	재고3,280	Standard	1800V	50A	1.8V @ 150A	300µA @ 1800V	-40°C ~ 150°C (TJ)	Chassis Mount	Module	M2-1
VBO52-16NO7	IXYS	DIODE BRIDGE 52A 1600V PWS-D Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 52A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-D Supplier Device Package: PWS-D	패키지: PWS-D	재고7,664	Standard	1600V	52A	1.8V @ 150A	300µA @ 1600V	-40°C ~ 150°C (TJ)	Chassis Mount	PWS-D	PWS-D
VUO34-12NO1	IXYS	RECT BRIDGE 3PH 36A 1200V V1-A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 36A Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A Current - Reverse Leakage @ Vr: 20µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V1-A Supplier Device Package: V1-A	패키지: V1-A	재고6,016	Standard	1200V	36A	1.13V @ 50A	20µA @ 1200V	-40°C ~ 150°C (TJ)	Chassis Mount	V1-A	V1-A
VBO54-16NO7	IXYS	DIODE BRIDGE 1600V 54A ECO-PAC1 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 54A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A Current - Reverse Leakage @ Vr: 40µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1 Supplier Device Package: ECO-PAC1	패키지: ECO-PAC1	재고5,936	Standard	1600V	54A	1.15V @ 20A	40µA @ 1600V	-40°C ~ 150°C (TJ)	Chassis Mount	ECO-PAC1	ECO-PAC1
BR82	GeneSiC Semiconductor	DIODE BRIDGE 200V 8A BR-8 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, BR-8 Supplier Device Package: BR-8	패키지: 4-Square, BR-8	재고4,816	Standard	200V	8A	1.1V @ 4A	10µA @ 200V	-65°C ~ 125°C (TJ)	Through Hole	4-Square, BR-8	BR-8
GBJ35005TB	SMC Diode Solutions	BRIDGE RECT 1PHASE 50V 35A GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 35A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-ESIP Supplier Device Package: GBJ	패키지: 4-ESIP	재고3,504	Standard	50V	35A	1.1V @ 35A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-ESIP	GBJ
GBL10-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT 4A GPP 1000V GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: 4-SIP, GBL	재고2,640	Standard	1000V	4A	1.1V @ 4A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
3KBP08M-M4/51	Vishay Semiconductor Diodes Division	BRIDGE RECT 3A 800V KBPM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM	패키지: 4-SIP, KBPM	재고6,288	Standard	50V	3A	1.05V @ 3A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBPM	KBPM
DBL101GHC1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 2µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: 4-DIP (0.300", 7.62mm)	재고6,944	Standard	50V	1A	1.1V @ 1A	2µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	DBL
GBU402TB	SMC Diode Solutions	BRIDGE RECT 1PHASE 200V 4A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-ESIP Supplier Device Package: GBU	패키지: 4-ESIP	재고5,856	Standard	200V	4A	1.1V @ 4A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-ESIP	GBU
EABS1G RGG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, SUPER FAST, 1A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Current - Reverse Leakage @ Vr: 1µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	패키지: 4-SMD, Gull Wing	재고6,256	Standard	400V	1A	1.2V @ 1A	1µA @ 400V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	ABS
ABF22TR	SMC Diode Solutions	BRIDGE RECT 1PHASE 200V 2A ABF Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABF	패키지: 4-SMD, Gull Wing	재고2,352	Standard	200V	2A	1V @ 2A	5µA @ 200V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	ABF
VUO36-16NO8	IXYS	RECT BRIDGE 27A 1600V FO-B Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 27A Voltage - Forward (Vf) (Max) @ If: 1.04V @ 15A Current - Reverse Leakage @ Vr: 40µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 5-Square, FO-B Supplier Device Package: FO-B	패키지: 5-Square, FO-B	재고7,552	Standard	1600V	27A	1.04V @ 15A	40µA @ 1600V	-40°C ~ 150°C (TJ)	QC Terminal	5-Square, FO-B	FO-B
GBU4B-E3/51	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 100V GPP GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고7,504	Standard	100V	3A	1V @ 4A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
KBU2504-G	Comchip Technology	RECT BRIDGE CELL 400V 25A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 3.6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	패키지: 4-SIP, KBU	재고11,652	Standard	400V	3.6A	1.1V @ 12.5A	10µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
BU1006-E3/45	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 600V 10A BU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 3.2A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU Supplier Device Package: isoCINK+? BU	패키지: 4-SIP, BU	재고3,488	Standard	600V	3.2A	1.05V @ 5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+? BU
GHXS010A060S-D1	Global Power Technologies Group	MOD SBD BRIDGE 600V 10A SOT227 Diode Type: Single Phase Technology: Silicon Carbide Schottky Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Current - Reverse Leakage @ Vr: 100µA @ 600V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,856	Silicon Carbide Schottky	600V	10A	1.7V @ 10A	100µA @ 600V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-26MB20A	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 200V 25A D-34A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, D-34 Supplier Device Package: D-34	패키지: 4-Square, D-34	재고7,024	Standard	200V	25A	-	10µA @ 200V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, D-34	D-34
GBJ5006-BP	Micro Commercial Co	50A, 600V BRIDGE RECTIFIER, GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고10,188	Standard	600V	50A	1.1V @ 25A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
KBPC5010	MDD	BRIDGE RECT 1P 1KV 50A KBPC Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, KBPC Supplier Device Package: KBPC	패키지: -	Request a Quote	Standard	1 kV	50 A	1.1 V @ 25 A	10 µA @ 1000 V	-50°C ~ 150°C (TJ)	Through Hole	4-Square, KBPC	KBPC
HDBL105GH	Taiwan Semiconductor Corporation	75NS, 1A, 600V, HIGH EFFICIENT R Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: -	재고15,000	Standard	600 V	1 A	1.7 V @ 1 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	DBL
KBP207G-C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 2A KBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP	패키지: -	Request a Quote	Standard	1 kV	2 A	1.2 V @ 2 A	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBP	KBP
GBLA02	Taiwan Semiconductor Corporation	DIODE BRIDGE 4A 200V GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: -	Request a Quote	Standard	200 V	3 A	1 V @ 4 A	5 µA @ 200 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
684-3	Microchip Technology	BRIDGE RECTIFIER Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 300 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Square, NA Supplier Device Package: NA	패키지: -	Request a Quote	Standard	300 V	10 A	1.2 V @ 2 A	5 µA @ 300 V	-65°C ~ 150°C (TJ)	Chassis Mount	4-Square, NA	NA
ABS20D	Diotec Semiconductor	IC Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	패키지: -	Request a Quote	Standard	200 V	2 A	1.1 V @ 2 A	5 µA @ 200 V	-50°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	ABS
TS15P05GH	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 15A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: -	Request a Quote	Standard	600 V	15 A	1.1 V @ 15 A	10 µA @ 600 V	-55°C ~ 125°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
BR5000	EIC SEMICONDUCTOR INC.	STD 50A, CASE TYPE: BR50 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Square, BR-50 Supplier Device Package: BR-50	패키지: -	Request a Quote	Standard	50 V	50 A	1.1 V @ 25 A	10 µA @ 50 V	-40°C ~ 150°C (TJ)	Chassis Mount	4-Square, BR-50	BR-50

CBR35-010P

Central Semiconductor Corp

RECT BRIDGE 25A 100V 4CASE FP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 12.5A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, FP
Supplier Device Package: 4-Case FP

패키지: 4-Square, FP

재고2,768

Standard

1000V

25A

1.2V @ 12.5A

10µA @ 100V

-65°C ~ 150°C (TJ)

QC Terminal

4-Square, FP

4-Case FP

MSDM50-18

Microsemi Corporation

MOD BRIDGE 3PH 1800V 50A M2-1

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1800V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1

패키지: Module

재고3,280

Standard

1800V

50A

1.8V @ 150A

300µA @ 1800V

-40°C ~ 150°C (TJ)

Chassis Mount

Module

M2-1

VBO52-16NO7

IXYS

DIODE BRIDGE 52A 1600V PWS-D

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 52A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-D
Supplier Device Package: PWS-D

패키지: PWS-D

재고7,664

Standard

1600V

52A

1.8V @ 150A

300µA @ 1600V

-40°C ~ 150°C (TJ)

Chassis Mount

PWS-D

VUO34-12NO1

IXYS

RECT BRIDGE 3PH 36A 1200V V1-A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 36A
Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
Current - Reverse Leakage @ Vr: 20µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V1-A
Supplier Device Package: V1-A

패키지: V1-A

재고6,016

Standard

1200V

36A

1.13V @ 50A

20µA @ 1200V

-40°C ~ 150°C (TJ)

Chassis Mount

V1-A

VBO54-16NO7

IXYS

DIODE BRIDGE 1600V 54A ECO-PAC1

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 54A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A
Current - Reverse Leakage @ Vr: 40µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Supplier Device Package: ECO-PAC1

패키지: ECO-PAC1

재고5,936

Standard

1600V

54A

1.15V @ 20A

40µA @ 1600V

-40°C ~ 150°C (TJ)

Chassis Mount

ECO-PAC1

BR82

GeneSiC Semiconductor

DIODE BRIDGE 200V 8A BR-8

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, BR-8
Supplier Device Package: BR-8

패키지: 4-Square, BR-8

재고4,816

Standard

200V

8A

1.1V @ 4A

10µA @ 200V

-65°C ~ 125°C (TJ)

Through Hole

4-Square, BR-8

BR-8

GBJ35005TB

SMC Diode Solutions

BRIDGE RECT 1PHASE 50V 35A GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 35A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP
Supplier Device Package: GBJ

패키지: 4-ESIP

재고3,504

Standard

50V

35A

1.1V @ 35A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-ESIP

GBJ

GBL10-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 1000V GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: 4-SIP, GBL

재고2,640

Standard

1000V

4A

1.1V @ 4A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

3KBP08M-M4/51

Vishay Semiconductor Diodes Division

BRIDGE RECT 3A 800V KBPM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

재고6,288

Standard

50V

3A

1.05V @ 3A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBPM

KBPM

DBL101GHC1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 2µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: DBL

패키지: 4-DIP (0.300", 7.62mm)

재고6,944

Standard

50V

1A

1.1V @ 1A

2µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

DBL

GBU402TB

SMC Diode Solutions

BRIDGE RECT 1PHASE 200V 4A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP
Supplier Device Package: GBU

패키지: 4-ESIP

재고5,856

Standard

200V

4A

1.1V @ 4A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-ESIP

GBU

EABS1G RGG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SUPER FAST, 1A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Reverse Leakage @ Vr: 1µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: ABS

패키지: 4-SMD, Gull Wing

재고6,256

Standard

400V

1A

1.2V @ 1A

1µA @ 400V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

ABS

ABF22TR

SMC Diode Solutions

BRIDGE RECT 1PHASE 200V 2A ABF

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: ABF

패키지: 4-SMD, Gull Wing

재고2,352

Standard

200V

2A

1V @ 2A

5µA @ 200V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

ABF

VUO36-16NO8

IXYS

RECT BRIDGE 27A 1600V FO-B

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 27A
Voltage - Forward (Vf) (Max) @ If: 1.04V @ 15A
Current - Reverse Leakage @ Vr: 40µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 5-Square, FO-B
Supplier Device Package: FO-B

패키지: 5-Square, FO-B

재고7,552

Standard

1600V

27A

1.04V @ 15A

40µA @ 1600V

-40°C ~ 150°C (TJ)

QC Terminal

5-Square, FO-B

FO-B

GBU4B-E3/51

Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 100V GPP GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고7,504

Standard

100V

3A

1V @ 4A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

KBU2504-G

Comchip Technology

RECT BRIDGE CELL 400V 25A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 3.6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

패키지: 4-SIP, KBU

재고11,652

Standard

400V

3.6A

1.1V @ 12.5A

10µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

BU1006-E3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 10A BU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 3.2A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Supplier Device Package: isoCINK+? BU

패키지: 4-SIP, BU

재고3,488

Standard

600V

3.2A

1.05V @ 5A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU

isoCINK+? BU

GHXS010A060S-D1

Global Power Technologies Group

MOD SBD BRIDGE 600V 10A SOT227

Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Current - Reverse Leakage @ Vr: 100µA @ 600V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,856

Silicon Carbide Schottky

600V

10A

1.7V @ 10A

100µA @ 600V

-55°C ~ 175°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

VS-26MB20A

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 200V 25A D-34A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, D-34
Supplier Device Package: D-34

패키지: 4-Square, D-34

재고7,024

Standard

200V

25A

-

10µA @ 200V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, D-34

D-34

GBJ5006-BP

Micro Commercial Co

50A, 600V BRIDGE RECTIFIER, GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고10,188

Standard

600V

50A

1.1V @ 25A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

KBPC5010

MDD

BRIDGE RECT 1P 1KV 50A KBPC

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC
Supplier Device Package: KBPC

패키지: -

Request a Quote

Standard

1 kV

50 A

1.1 V @ 25 A

10 µA @ 1000 V

-50°C ~ 150°C (TJ)

Through Hole

4-Square, KBPC

KBPC

HDBL105GH

Taiwan Semiconductor Corporation

75NS, 1A, 600V, HIGH EFFICIENT R

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: DBL

패키지: -

재고15,000

Standard

600 V

1 A

1.7 V @ 1 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

DBL

KBP207G-C2G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 2A KBP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Supplier Device Package: KBP

패키지: -

Request a Quote

Standard

1 kV

2 A

1.2 V @ 2 A

10 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBP

KBP

GBLA02

Taiwan Semiconductor Corporation

DIODE BRIDGE 4A 200V GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: -

Request a Quote

Standard

200 V

3 A

1 V @ 4 A

5 µA @ 200 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

684-3

Microchip Technology

BRIDGE RECTIFIER

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 300 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 4-Square, NA
Supplier Device Package: NA

패키지: -

Request a Quote

Standard

300 V

10 A

1.2 V @ 2 A

5 µA @ 300 V

-65°C ~ 150°C (TJ)

Chassis Mount

4-Square, NA

NA

ABS20D

Diotec Semiconductor

IC

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: ABS

패키지: -

Request a Quote

Standard

200 V

2 A

1.1 V @ 2 A

5 µA @ 200 V

-50°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

ABS

TS15P05GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 15A TS-6P

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: -

Request a Quote

Standard

600 V

15 A

1.1 V @ 15 A

10 µA @ 600 V

-55°C ~ 125°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

BR5000

EIC SEMICONDUCTOR INC.

STD 50A, CASE TYPE: BR50

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 4-Square, BR-50
Supplier Device Package: BR-50

패키지: -

Request a Quote

Standard

50 V

50 A

1.1 V @ 25 A

10 µA @ 50 V

-40°C ~ 150°C (TJ)

Chassis Mount

4-Square, BR-50

BR-50