페이지 124 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
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설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2KBP01M-E4/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 100V 1PH 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고3,344
Standard
100V
2A
1.1V @ 3.14A
5µA @ 100V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
2KBP005M-E4/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 50V 1PH 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고7,376
Standard
50V
2A
1.1V @ 3.14A
5µA @ 50V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
RB155
Micro Commercial Co

RECTIFIER BRIDGE 1.5A 600V RB-15

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, RB-15
  • Supplier Device Package: RB-15
패키지: 4-Circular, RB-15
재고6,000
Standard
600V
1.5A
1V @ 1.5A
10µA @ 600V
-55°C ~ 125°C (TJ)
Through Hole
4-Circular, RB-15
RB-15
SCBAR1
Semtech Corporation

BRIDGE RECT 9.5A 100V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 9.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 9A
  • Current - Reverse Leakage @ Vr: 6µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Round
  • Supplier Device Package: -
패키지: 4-Round
재고2,736
Standard
100V
9.5A
1V @ 9A
6µA @ 100V
-55°C ~ 150°C (TJ)
QC Terminal
4-Round
-
SCAJ6
Semtech Corporation

BRIDGE RECT 2A 600V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 2µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square
  • Supplier Device Package: -
패키지: 4-Square
재고4,256
Standard
600V
2A
1.1V @ 1A
2µA @ 600V
-55°C ~ 150°C (TJ)
Chassis Mount
4-Square
-
APTDC40H601G
Microsemi Corporation

POWER MODULE DIODE 600V 40A SP1

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
  • Current - Reverse Leakage @ Vr: 800µA @ 600V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고6,400
Silicon Carbide Schottky
600V
40A
1.8V @ 40A
800µA @ 600V
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
VS-60MT80KPBF
Vishay Semiconductor Diodes Division

MODULE 800V 60A 3-PHASE MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MT-K Module
  • Supplier Device Package: MT-K
패키지: MT-K Module
재고3,008
Standard
800V
60A
-
-
-40°C ~ 150°C (TJ)
Chassis Mount
MT-K Module
MT-K
VBO50-18NO7
IXYS

DIODE BRIDGE 50A 1800V PWS-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
  • Current - Reverse Leakage @ Vr: 100µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-A
  • Supplier Device Package: PWS-A
패키지: PWS-A
재고4,128
Standard
1800V
50A
1.14V @ 40A
100µA @ 1800V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-A
PWS-A
TS10P06GHD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 10A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고2,384
Standard
800V
10A
1.1V @ 10A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS8P01G C2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고3,984
Standard
50V
8A
1.1V @ 8A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBLA02-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 200V GBL

  • Diode Type: Single Phase
  • Technology: Avalanche
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고7,600
Avalanche
200V
3A
1.1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
HDBL106G C1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, HIGH EFFICIENT

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
패키지: 4-DIP (0.300", 7.62mm)
재고5,856
Standard
800V
1A
1.7V @ 1A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
DF08-G
Comchip Technology

RECTIFIER BRIDGE 1.0A 800V DF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: 4-DF
패키지: 4-EDIP (0.321", 8.15mm)
재고2,304
Standard
800V
1A
1.1V @ 1A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
4-DF
PB4010-E3/45
Vishay Semiconductor Diodes Division

RECT BRIDGE 40A 1000V ENHANCE PB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, PB
  • Supplier Device Package: isoCINK+? PB
패키지: 4-SIP, PB
재고6,992
Standard
1000V
40A
1.1V @ 20A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, PB
isoCINK+? PB
BU2510-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 25A 1000V BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
패키지: 4-SIP, BU
재고4,992
Standard
1000V
25A
1.05V @ 12.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
TS15P05G D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고2,960
Standard
600V
15A
1.1V @ 15A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
APT40DR160HJ
Microsemi Corporation

POWER MODULE FULL BRIDGE SOT-227

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 40A
  • Current - Reverse Leakage @ Vr: 20µA @ 1600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
패키지: SOT-227-4, miniBLOC
재고6,384
Standard
1600V
40A
1.3V @ 40A
20µA @ 1600V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
hot KBP208G
Diodes Incorporated

RECT BRIDGE GPP 2A 800V KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
패키지: 4-SIP, KBP
재고79,704
Standard
800V
2A
1.1V @ 2A
5µA @ 800V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, KBP
KBP
GBJ8J
Surge

8A -600V - GBJ - BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ-6
패키지: -
Request a Quote
Standard
600 V
8 A
1 V @ 4 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ-6
GBU15L06-TU
Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE GBU TUB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
600 V
15 A
900 mV @ 7.5 A
10 µA @ 600 V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
RDXK210_T0_00601
Panjit International Inc.

DXK,GLASS PASSIVATED FAST BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: DXK
패키지: -
재고16,800
Standard
1 kV
2 A
1.3 V @ 1 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP
DXK
GBU8JL-5300M3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3.9A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3.9 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
600 V
3.9 A
1 V @ 8 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
CBS810-HF
HY Electronic (Cayman) Limited

GLASS PASSIVATED BRIDGE RECTIFIE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: CBS
패키지: -
Request a Quote
Standard
1 kV
8 A
1 V @ 8 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
CBS
GBJ10G
GeneSiC Semiconductor

400V 10A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: -
Request a Quote
Standard
400 V
10 A
1.05 V @ 5 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
TT4V10
Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE TT T&R

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: TT
패키지: -
Request a Quote
Standard
1 kV
4 A
950 mV @ 2 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
TT
GBL01E-E3-P
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 100V 3A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 2.6 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
재고6,000
Standard
100 V
2.6 A
1 V @ 4 A
5 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
CSPB30M-HF
Comchip Technology

BRIDGE RECTIFIER 1000V 3A SPB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-SPB
패키지: -
Request a Quote
Standard
1 kV
3 A
1.15 V @ 3 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-SPB
UD2KB20-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: D3K
패키지: -
Request a Quote
Standard
200 V
2 A
1 V @ 1 A
10 µA @ 200 V
-55°C ~ 150°C
Through Hole
4-SIP
D3K