페이지 136 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CD2320-B1200	Bourns Inc.	RECT BRIDGE 1A 200V Diode Type: Single Phase Technology: Schottky Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Chip, Concave Terminals Supplier Device Package: 2320	패키지: Chip, Concave Terminals	재고5,968	Schottky	200V	1A	1V @ 1A	5µA @ 200V	-55°C ~ 175°C (TJ)	Surface Mount	Chip, Concave Terminals	2320
VSIB680-E3/45	Vishay Semiconductor Diodes Division	DIODE 6A 800V SGL BRIDGE 4SIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 2.8A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Current - Reverse Leakage @ Vr: 10µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GSIB-5S Supplier Device Package: GSIB-5S	패키지: 4-SIP, GSIB-5S	재고3,584	Standard	800V	2.8A	950mV @ 3A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GSIB-5S	GSIB-5S
MB156W-F	Diodes Incorporated	RECTIFIER BRIDGE 600V 15A MB-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, MB-W Supplier Device Package: MB-W	패키지: 4-Square, MB-W	재고5,056	Standard	600V	15A	1.1V @ 7.5A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, MB-W	MB-W
VBO36-08NO8	IXYS	RECT BRIDGE 30A 800V FO-B Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, FO-B Supplier Device Package: FO-B	패키지: 4-Square, FO-B	재고2,768	Standard	800V	30A	1.7V @ 150A	300µA @ 800V	-40°C ~ 150°C (TJ)	QC Terminal	4-Square, FO-B	FO-B
KBPC1004W-G	Comchip Technology	RECTIFIER BRIDGE 10A 400V KBPCW Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Supplier Device Package: KBPC-W	패키지: 4-Square, KBPC-W	재고6,912	Standard	400V	10A	1.1V @ 5A	10µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, KBPC-W	KBPC-W
BU2008-M3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 20A 800V BU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU Supplier Device Package: isoCINK+? BU	패키지: 4-SIP, BU	재고5,840	Standard	800V	20A	1.05V @ 10A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+? BU
KBJ2504G	GeneSiC Semiconductor	DIODE BRIDGE 400V 25A KBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBJ Supplier Device Package: KBJ	패키지: 4-SIP, KBJ	재고4,992	Standard	400V	25A	1.05V @ 12.5A	10µA @ 400V	-55°C ~ 125°C (TJ)	Through Hole	4-SIP, KBJ	KBJ
TS10P04GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 10A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고2,176	Standard	400V	10A	1.1V @ 10A	10µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
TS10P03G D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 10A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고6,832	Standard	200V	10A	1.1V @ 10A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
2W005M	GeneSiC Semiconductor	DIODE BRIDGE 50V 2A WOM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOM Supplier Device Package: WOM	패키지: 4-Circular, WOM	재고5,520	Standard	50V	2A	1.1V @ 2A	10µA @ 50V	-65°C ~ 125°C (TJ)	Through Hole	4-Circular, WOM	WOM
DB155G	GeneSiC Semiconductor	DIODE BRIDGE 600V 1.5A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	패키지: 4-EDIP (0.321", 8.15mm)	재고7,616	Standard	600V	1.5A	1.1V @ 1.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB
DF15005ST-G	Comchip Technology	RECTIFIER BRIDGE 1.5A 50V DFS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DFS	패키지: 4-SMD, Gull Wing	재고7,808	Standard	50V	1.5A	1.1V @ 1.5A	10µA @ 50V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	DFS
ABS2 RGG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	패키지: 4-SMD, Gull Wing	재고5,328	Standard	200V	800mA	950mV @ 400mA	10µA @ 200V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	ABS
BU1008A-M3/45	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 800V 10A BU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU Supplier Device Package: isoCINK+? BU	패키지: 4-SIP, BU	재고7,104	Standard	800V	10A	1.1V @ 5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+? BU
TS6K80 D3G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 6A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: TS4K	패키지: 4-SIP, GBL	재고6,592	Standard	800V	6A	1V @ 2A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	TS4K
GBU6G	Fairchild/ON Semiconductor	RECT BRIDGE GPP 6A 400V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고27,000	Standard	400V	6A	1V @ 6A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
VS-100MT160P-P	Vishay Semiconductor Diodes Division	MOD BRIDGE 3PH 100A 1600V MTP Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.51V @ 100A Current - Reverse Leakage @ Vr: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: 12-MTP Pressfit	패키지: 12-MTP Module	재고7,224	Standard	1600V	100A	1.51V @ 100A	-	-40°C ~ 150°C (TJ)	Chassis Mount	12-MTP Module	12-MTP Pressfit
NTE5335	NTE Electronics, Inc	R-SI BRIDGE 3-PHASE 60A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 60 A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 60 A Current - Reverse Leakage @ Vr: - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Rectangular Supplier Device Package: -	패키지: -	Request a Quote	Standard	600 V	60 A	1.35 V @ 60 A	-	-40°C ~ 125°C (TJ)	Chassis Mount	4-Rectangular	-
GBU10G-T	Diotec Semiconductor	IC Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 7 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	400 V	7 A	1.1 V @ 10 A	5 µA @ 400 V	-50°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
KBL406G-T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 4A KBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBL Supplier Device Package: KBL	패키지: -	Request a Quote	Standard	800 V	4 A	1.1 V @ 4 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBL	KBL
GBPC3504W-BP	Micro Commercial Co	BRIDGE RECT 1P 400V 35A GBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: -	Request a Quote	Standard	400 V	35 A	1.1 V @ 17.5 A	5 µA @ 400 V	-55°C ~ 150°C	Through Hole	4-Square, GBPC-W	GBPC-W
DBI20-08B	Diotec Semiconductor	IC Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 5-SIP Supplier Device Package: DBI-B	패키지: -	Request a Quote	Standard	800 V	3 A	1.3 V @ 20 A	10 µA @ 800 V	-50°C ~ 150°C (TJ)	Through Hole	5-SIP	DBI-B
D2SB80	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 2A GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: -	재고23,673	Standard	800 V	2 A	1.1 V @ 15 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
3N255-M	Central Semiconductor Corp	BRIDGE RECTIFIER Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP Supplier Device Package: B-M	패키지: -	Request a Quote	Standard	200 V	2 A	1.1 V @ 3.14 A	10 µA @ 200 V	-65°C ~ 150°C (TJ)	Through Hole	4-SIP	B-M
KBP310G	Diotec Semiconductor	BRIDGE 1-PH KBP 1000V 3A 150C Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP	패키지: -	Request a Quote	Standard	1 kV	3 A	1.1 V @ 3 A	5 µA @ 1000 V	-50°C ~ 150°C (TJ)	Through Hole	4-SIP, KBP	KBP
RBV5010	EIC SEMICONDUCTOR INC.	BRIGDE RECTIFIER 50A 1000V, CASE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, RBV-25 Supplier Device Package: RBV-25	패키지: -	Request a Quote	Standard	1 kV	50 A	1.1 V @ 25 A	10 µA @ 1000 V	-40°C ~ 150°C (TJ)	Through Hole	4-SIP, RBV-25	RBV-25
B500D	Diotec Semiconductor	1PH BRIDGE DIL 1000V 1A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.300", 7.62mm) Supplier Device Package: -	패키지: -	재고2,700	Standard	1 kV	1 A	1.1 V @ 1 A	5 µA @ 1000 V	-50°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.300", 7.62mm)	-
KBJ4JU	Good-Ark Semiconductor	BRIDGE RECTIFIER, GENERAL PURPOS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2.3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBJ Supplier Device Package: KBJ(3S)	패키지: -	재고2,151	Standard	600 V	2.3 A	1 V @ 2 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBJ	KBJ(3S)

CD2320-B1200

Bourns Inc.

RECT BRIDGE 1A 200V

Diode Type: Single Phase
Technology: Schottky
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Chip, Concave Terminals
Supplier Device Package: 2320

패키지: Chip, Concave Terminals

재고5,968

Schottky

200V

1A

1V @ 1A

5µA @ 200V

-55°C ~ 175°C (TJ)

Surface Mount

Chip, Concave Terminals

2320

VSIB680-E3/45

Vishay Semiconductor Diodes Division

DIODE 6A 800V SGL BRIDGE 4SIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 2.8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Supplier Device Package: GSIB-5S

패키지: 4-SIP, GSIB-5S

재고3,584

Standard

800V

2.8A

950mV @ 3A

10µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GSIB-5S

GSIB-5S

MB156W-F

Diodes Incorporated

RECTIFIER BRIDGE 600V 15A MB-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, MB-W
Supplier Device Package: MB-W

패키지: 4-Square, MB-W

재고5,056

Standard

600V

15A

1.1V @ 7.5A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, MB-W

MB-W

VBO36-08NO8

IXYS

RECT BRIDGE 30A 800V FO-B

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, FO-B
Supplier Device Package: FO-B

패키지: 4-Square, FO-B

재고2,768

Standard

800V

30A

1.7V @ 150A

300µA @ 800V

-40°C ~ 150°C (TJ)

QC Terminal

4-Square, FO-B

FO-B

KBPC1004W-G

Comchip Technology

RECTIFIER BRIDGE 10A 400V KBPCW

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Supplier Device Package: KBPC-W

패키지: 4-Square, KBPC-W

재고6,912

Standard

400V

10A

1.1V @ 5A

10µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, KBPC-W

KBPC-W

BU2008-M3/51

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 20A 800V BU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Supplier Device Package: isoCINK+? BU

패키지: 4-SIP, BU

재고5,840

Standard

800V

20A

1.05V @ 10A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU

isoCINK+? BU

KBJ2504G

GeneSiC Semiconductor

DIODE BRIDGE 400V 25A KBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Supplier Device Package: KBJ

패키지: 4-SIP, KBJ

재고4,992

Standard

400V

25A

1.05V @ 12.5A

10µA @ 400V

-55°C ~ 125°C (TJ)

Through Hole

4-SIP, KBJ

KBJ

TS10P04GHC2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 10A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

재고2,176

Standard

400V

10A

1.1V @ 10A

10µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

TS10P03G D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 10A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

재고6,832

Standard

200V

10A

1.1V @ 10A

10µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

2W005M

GeneSiC Semiconductor

DIODE BRIDGE 50V 2A WOM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 10µA @ 50V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOM
Supplier Device Package: WOM

패키지: 4-Circular, WOM

재고5,520

Standard

50V

2A

1.1V @ 2A

10µA @ 50V

-65°C ~ 125°C (TJ)

Through Hole

4-Circular, WOM

WOM

DB155G

GeneSiC Semiconductor

DIODE BRIDGE 600V 1.5A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

패키지: 4-EDIP (0.321", 8.15mm)

재고7,616

Standard

600V

1.5A

1.1V @ 1.5A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB

DF15005ST-G

Comchip Technology

RECTIFIER BRIDGE 1.5A 50V DFS

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Reverse Leakage @ Vr: 10µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: DFS

패키지: 4-SMD, Gull Wing

재고7,808

Standard

50V

1.5A

1.1V @ 1.5A

10µA @ 50V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

DFS

ABS2 RGG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: ABS

패키지: 4-SMD, Gull Wing

재고5,328

Standard

200V

800mA

950mV @ 400mA

10µA @ 200V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

ABS

BU1008A-M3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 10A BU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Supplier Device Package: isoCINK+? BU

패키지: 4-SIP, BU

재고7,104

Standard

800V

10A

1.1V @ 5A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU

isoCINK+? BU

TS6K80 D3G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: TS4K

패키지: 4-SIP, GBL

재고6,592

Standard

800V

6A

1V @ 2A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

TS4K

GBU6G

Fairchild/ON Semiconductor

RECT BRIDGE GPP 6A 400V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고27,000

Standard

400V

6A

1V @ 6A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

VS-100MT160P-P

Vishay Semiconductor Diodes Division

MOD BRIDGE 3PH 100A 1600V MTP

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.51V @ 100A
Current - Reverse Leakage @ Vr: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Supplier Device Package: 12-MTP Pressfit

패키지: 12-MTP Module

재고7,224

Standard

1600V

100A

1.51V @ 100A

-

-40°C ~ 150°C (TJ)

Chassis Mount

12-MTP Module

12-MTP Pressfit

NTE5335

NTE Electronics, Inc

R-SI BRIDGE 3-PHASE 60A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 60 A
Current - Reverse Leakage @ Vr: -
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 4-Rectangular
Supplier Device Package: -

패키지: -

Request a Quote

Standard

600 V

60 A

1.35 V @ 60 A

-

-40°C ~ 125°C (TJ)

Chassis Mount

4-Rectangular

-

GBU10G-T

Diotec Semiconductor

IC

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 7 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

Request a Quote

Standard

400 V

7 A

1.1 V @ 10 A

5 µA @ 400 V

-50°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

KBL406G-T0G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 4A KBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Supplier Device Package: KBL

패키지: -

Request a Quote

Standard

800 V

4 A

1.1 V @ 4 A

10 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBL

KBL

GBPC3504W-BP

Micro Commercial Co

BRIDGE RECT 1P 400V 35A GBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: -

Request a Quote

Standard

400 V

35 A

1.1 V @ 17.5 A

5 µA @ 400 V

-55°C ~ 150°C

Through Hole

4-Square, GBPC-W

GBPC-W

DBI20-08B

Diotec Semiconductor

IC

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 5-SIP
Supplier Device Package: DBI-B

패키지: -

Request a Quote

Standard

800 V

3 A

1.3 V @ 20 A

10 µA @ 800 V

-50°C ~ 150°C (TJ)

Through Hole

5-SIP

DBI-B

D2SB80

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 2A GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: -

재고23,673

Standard

800 V

2 A

1.1 V @ 15 A

10 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

3N255-M

Central Semiconductor Corp

BRIDGE RECTIFIER

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP
Supplier Device Package: B-M

패키지: -

Request a Quote

Standard

200 V

2 A

1.1 V @ 3.14 A

10 µA @ 200 V

-65°C ~ 150°C (TJ)

Through Hole

4-SIP

B-M

KBP310G

Diotec Semiconductor

BRIDGE 1-PH KBP 1000V 3A 150C

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Supplier Device Package: KBP

패키지: -

Request a Quote

Standard

1 kV

3 A

1.1 V @ 3 A

5 µA @ 1000 V

-50°C ~ 150°C (TJ)

Through Hole

4-SIP, KBP

KBP

RBV5010

EIC SEMICONDUCTOR INC.

BRIGDE RECTIFIER 50A 1000V, CASE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, RBV-25
Supplier Device Package: RBV-25

패키지: -

Request a Quote

Standard

1 kV

50 A

1.1 V @ 25 A

10 µA @ 1000 V

-40°C ~ 150°C (TJ)

Through Hole

4-SIP, RBV-25

RBV-25

B500D

Diotec Semiconductor

1PH BRIDGE DIL 1000V 1A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.300", 7.62mm)
Supplier Device Package: -

패키지: -

재고2,700

Standard

1 kV

1 A

1.1 V @ 1 A

5 µA @ 1000 V

-50°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.300", 7.62mm)

-

KBJ4JU

Good-Ark Semiconductor

BRIDGE RECTIFIER, GENERAL PURPOS

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2.3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Supplier Device Package: KBJ(3S)

패키지: -

재고2,151

Standard

600 V

2.3 A

1 V @ 2 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBJ

KBJ(3S)