페이지 142 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MSDM150-18	Microsemi Corporation	MOD BRIDGE 3PH 1800V 150A M3-1 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1800V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A Current - Reverse Leakage @ Vr: 500µA @ 1800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: M3-1 Supplier Device Package: M3-1	패키지: M3-1	재고5,312	Standard	1800V	150A	1.4V @ 150A	500µA @ 1800V	-40°C ~ 150°C (TJ)	Chassis Mount	M3-1	M3-1
GBU4A-E3/45	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 50V GPP GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고2,640	Standard	50V	3A	1V @ 4A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
112MT120KB	Vishay Semiconductor Diodes Division	RECT BRIDGE 1200V 110A MTK Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: 20mA @ 1200V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: MTK Supplier Device Package: MTK	패키지: MTK	재고4,944	Standard	1200V	110A	-	20mA @ 1200V	-40°C ~ 125°C (TJ)	Chassis Mount	MTK	MTK
GBJ602	Diodes Incorporated	RECT BRIDGE GPP 200V 6A GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고19,020	Standard	200V	6A	1V @ 3A	5µA @ 200V	-65°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
MB256W	Micro Commercial Co	RECT BRIDGE 25A 600V WIRE LEADS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 12.5A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, MB-35W Supplier Device Package: MB-35W	패키지: 4-Square, MB-35W	재고4,352	Standard	600V	25A	1.2V @ 12.5A	10µA @ 600V	-55°C ~ 125°C (TJ)	Through Hole	4-Square, MB-35W	MB-35W
APTDF200H120G	Microsemi Corporation	DIODE MODULE FULL BRIDGE SP6 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 235A Voltage - Forward (Vf) (Max) @ If: 3V @ 200A Current - Reverse Leakage @ Vr: 150µA @ 1200V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고3,840	Standard	1200V	235A	3V @ 200A	150µA @ 1200V	-40°C ~ 175°C (TJ)	Chassis Mount	SP6	SP6
GBJ3510-F	Diodes Incorporated	BRIDGE RECTIFIER GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 3.6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고2,512	Standard	1000V	3.6A	1.1V @ 17.5A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
TS8P06G C2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 8A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Current - Reverse Leakage @ Vr: 10µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고4,144	Standard	800V	8A	1.1V @ 8A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
BU1008-E3/45	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 800V 10A BU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 3.2A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU Supplier Device Package: isoCINK+? BU	패키지: 4-SIP, BU	재고2,112	Standard	800V	3.2A	1.05V @ 5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+? BU
CBR1F-D020	Central Semiconductor Corp	RECT BRIDGE 1A 200V A CASE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, A Case Supplier Device Package: A Case	패키지: 4-Circular, A Case	재고16,860	Standard	200V	1A	1.3V @ 1A	10µA @ 200V	-65°C ~ 150°C (TJ)	Through Hole	4-Circular, A Case	A Case
Z4GP210-HF	Comchip Technology	RECT BRIDGE GP 1000V 2A ABSZ4 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: ABS(Z4)	패키지: 4-SMD, No Lead	재고3,328	Standard	1000V	2A	950mV @ 2A	5µA @ 1000V	-55°C ~ 175°C (TJ)	Surface Mount	4-SMD, No Lead	ABS(Z4)
MB6S-E3/80	Vishay Semiconductor Diodes Division	RECT BRIDGE 600V .5A TO269AA Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-269AA, 4-BESOP Supplier Device Package: TO-269AA (MBS)	패키지: TO-269AA, 4-BESOP	재고4,200,528	Standard	600V	500mA	1V @ 400mA	5µA @ 600V	-55°C ~ 150°C (TJ)	Surface Mount	TO-269AA, 4-BESOP	TO-269AA (MBS)
GBPC2510W	GeneSiC Semiconductor	DIODE BRIDGE 1000V 25A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: 4-Square, GBPC-W	재고3,456	Standard	1000V	25A	1.1V @ 12.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
DF06-G	Comchip Technology	RECT BRIDGE GPP 600V 1A DF Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: 4-DF	패키지: 4-EDIP (0.321", 8.15mm)	재고16,584	Standard	600V	1A	1.1V @ 1A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	4-DF
MB10STR	SMC Diode Solutions	BRIDGE RECT 1PHASE 1KV 500MA MBS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: MBS	패키지: 4-SMD, Gull Wing	재고23,268	Standard	1000V	500mA	1.1V @ 800mA	5µA @ 1000V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	MBS
VS-GBPC3504A	Vishay Semiconductor Diodes Division	RECT BRIDGE 1-PH 400V 35A GBPC-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: 2mA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC-A Supplier Device Package: GBPC-A	패키지: 4-Square, GBPC-A	재고16,932	Standard	400V	35A	-	2mA @ 400V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-A	GBPC-A
CBRSDSH2-40 TR13	Central Semiconductor Corp	BRIDGE RECT 2A 40V 4SMDIP Diode Type: Single Phase Technology: Schottky Voltage - Peak Reverse (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A Current - Reverse Leakage @ Vr: 70µA @ 40V Operating Temperature: -50°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-SMDIP	패키지: 4-SMD, Gull Wing	재고26,514	Schottky	40V	2A	450mV @ 2A	70µA @ 40V	-50°C ~ 125°C (TJ)	Surface Mount	4-SMD, Gull Wing	4-SMDIP
DBLS156GH	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 1.5A DBLS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 2 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	패키지: -	재고9,000	Standard	800 V	1.5 A	1.1 V @ 1.5 A	2 µA @ 800 V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	DBLS
KBP4005G-BP	Micro Commercial Co	Interface Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: 4-SIP, GBP Supplier Device Package: GBP	패키지: -	Request a Quote	Standard	50 V	4 A	1.05 V @ 2 A	10 µA @ 50 V	-55°C ~ 150°C	Through Hole	4-SIP, GBP	GBP
GBJ6005-BP	Micro Commercial Co	Interface Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: -	Request a Quote	Standard	50 V	6 A	1 V @ 3 A	5 µA @ 50 V	-55°C ~ 150°C	Through Hole	4-SIP, GBJ	GBJ
UC1610J	Texas Instruments	BRIDGE RECTIFIER DIODE, SCHOTTKY Diode Type: - Technology: - Voltage - Peak Reverse (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-
GBJ2506ULV_T0_00601	Panjit International Inc.	ULTRA LOW VF BRIDGE RECTIFIER WI Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ-2	패키지: -	Request a Quote	Standard	600 V	25 A	920 mV @ 12.5 A	1 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ-2
GBU6ML-7001M3-45	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1PHASE 1KV 3.8A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3.8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	1 kV	3.8 A	1 V @ 6 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBJ5010_HF	Diodes Incorporated	MEDIUM/HIGH POWER BRIDGE GBJ TUB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: -	Request a Quote	Standard	1 kV	50 A	1.1 V @ 25 A	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
SM320A	JATTA	BRIDGE RECT 1P 600V 3.0A DO-214A Diode Type: - Technology: - Voltage - Peak Reverse (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-
RBV800	EIC SEMICONDUCTOR INC.	BRIGDE RECTIFIER 8A 50V, CASE TY Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, RBV-25 Supplier Device Package: RBV-25	패키지: -	Request a Quote	Standard	50 V	8 A	1 V @ 4 A	10 µA @ 50 V	-40°C ~ 150°C (TJ)	Through Hole	4-SIP, RBV-25	RBV-25
TS35P06G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 35A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: -	재고3,600	Standard	800 V	35 A	1.1 V @ 17.5 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
DB202L-BP	Micro Commercial Co	Interface Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DBL-1	패키지: -	Request a Quote	Standard	100 V	2 A	1.1 V @ 2 A	10 µA @ 100 V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DBL-1

MSDM150-18

Microsemi Corporation

MOD BRIDGE 3PH 1800V 150A M3-1

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1800V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3-1
Supplier Device Package: M3-1

패키지: M3-1

재고5,312

Standard

1800V

150A

1.4V @ 150A

500µA @ 1800V

-40°C ~ 150°C (TJ)

Chassis Mount

M3-1

GBU4A-E3/45

Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 50V GPP GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고2,640

Standard

50V

3A

1V @ 4A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

112MT120KB

Vishay Semiconductor Diodes Division

RECT BRIDGE 1200V 110A MTK

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 110A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: 20mA @ 1200V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: MTK
Supplier Device Package: MTK

패키지: MTK

재고4,944

Standard

1200V

110A

-

20mA @ 1200V

-40°C ~ 125°C (TJ)

Chassis Mount

MTK

GBJ602

Diodes Incorporated

RECT BRIDGE GPP 200V 6A GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고19,020

Standard

200V

6A

1V @ 3A

5µA @ 200V

-65°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

MB256W

Micro Commercial Co

RECT BRIDGE 25A 600V WIRE LEADS

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 12.5A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, MB-35W
Supplier Device Package: MB-35W

패키지: 4-Square, MB-35W

재고4,352

Standard

600V

25A

1.2V @ 12.5A

10µA @ 600V

-55°C ~ 125°C (TJ)

Through Hole

4-Square, MB-35W

MB-35W

APTDF200H120G

Microsemi Corporation

DIODE MODULE FULL BRIDGE SP6

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 235A
Voltage - Forward (Vf) (Max) @ If: 3V @ 200A
Current - Reverse Leakage @ Vr: 150µA @ 1200V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고3,840

Standard

1200V

235A

3V @ 200A

150µA @ 1200V

-40°C ~ 175°C (TJ)

Chassis Mount

SP6

GBJ3510-F

Diodes Incorporated

BRIDGE RECTIFIER GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 3.6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고2,512

Standard

1000V

3.6A

1.1V @ 17.5A

10µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

TS8P06G C2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

재고4,144

Standard

800V

8A

1.1V @ 8A

10µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

BU1008-E3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 10A BU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 3.2A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Supplier Device Package: isoCINK+? BU

패키지: 4-SIP, BU

재고2,112

Standard

800V

3.2A

1.05V @ 5A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU

isoCINK+? BU

CBR1F-D020

Central Semiconductor Corp

RECT BRIDGE 1A 200V A CASE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, A Case
Supplier Device Package: A Case

패키지: 4-Circular, A Case

재고16,860

Standard

200V

1A

1.3V @ 1A

10µA @ 200V

-65°C ~ 150°C (TJ)

Through Hole

4-Circular, A Case

A Case

Z4GP210-HF

Comchip Technology

RECT BRIDGE GP 1000V 2A ABSZ4

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: ABS(Z4)

패키지: 4-SMD, No Lead

재고3,328

Standard

1000V

2A

950mV @ 2A

5µA @ 1000V

-55°C ~ 175°C (TJ)

Surface Mount

4-SMD, No Lead

ABS(Z4)

MB6S-E3/80

Vishay Semiconductor Diodes Division

RECT BRIDGE 600V .5A TO269AA

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-269AA, 4-BESOP
Supplier Device Package: TO-269AA (MBS)

패키지: TO-269AA, 4-BESOP

재고4,200,528

Standard

600V

500mA

1V @ 400mA

5µA @ 600V

-55°C ~ 150°C (TJ)

Surface Mount

TO-269AA, 4-BESOP

TO-269AA (MBS)

GBPC2510W

GeneSiC Semiconductor

DIODE BRIDGE 1000V 25A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

재고3,456

Standard

1000V

25A

1.1V @ 12.5A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

DF06-G

Comchip Technology

RECT BRIDGE GPP 600V 1A DF

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: 4-DF

패키지: 4-EDIP (0.321", 8.15mm)

재고16,584

Standard

600V

1A

1.1V @ 1A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

4-DF

MB10STR

SMC Diode Solutions

BRIDGE RECT 1PHASE 1KV 500MA MBS

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: MBS

패키지: 4-SMD, Gull Wing

재고23,268

Standard

1000V

500mA

1.1V @ 800mA

5µA @ 1000V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

MBS

VS-GBPC3504A

Vishay Semiconductor Diodes Division

RECT BRIDGE 1-PH 400V 35A GBPC-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: 2mA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC-A
Supplier Device Package: GBPC-A

패키지: 4-Square, GBPC-A

재고16,932

Standard

400V

35A

-

2mA @ 400V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC-A

GBPC-A

CBRSDSH2-40 TR13

Central Semiconductor Corp

BRIDGE RECT 2A 40V 4SMDIP

Diode Type: Single Phase
Technology: Schottky
Voltage - Peak Reverse (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
Current - Reverse Leakage @ Vr: 70µA @ 40V
Operating Temperature: -50°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-SMDIP

패키지: 4-SMD, Gull Wing

재고26,514

Schottky

40V

2A

450mV @ 2A

70µA @ 40V

-50°C ~ 125°C (TJ)

Surface Mount

4-SMD, Gull Wing

4-SMDIP

DBLS156GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 800V 1.5A DBLS

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: DBLS

패키지: -

재고9,000

Standard

800 V

1.5 A

1.1 V @ 1.5 A

2 µA @ 800 V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

DBLS

KBP4005G-BP

Micro Commercial Co

Interface

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: 4-SIP, GBP
Supplier Device Package: GBP

패키지: -

Request a Quote

Standard

50 V

4 A

1.05 V @ 2 A

10 µA @ 50 V

-55°C ~ 150°C

Through Hole

4-SIP, GBP

GBP

GBJ6005-BP

Micro Commercial Co

Interface

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: -

Request a Quote

Standard

50 V

6 A

1 V @ 3 A

5 µA @ 50 V

-55°C ~ 150°C

Through Hole

4-SIP, GBJ

GBJ

UC1610J

Texas Instruments

BRIDGE RECTIFIER DIODE, SCHOTTKY

Diode Type: -
Technology: -
Voltage - Peak Reverse (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

GBJ2506ULV_T0_00601

Panjit International Inc.

ULTRA LOW VF BRIDGE RECTIFIER WI

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ-2

패키지: -

Request a Quote

Standard

600 V

25 A

920 mV @ 12.5 A

1 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ-2

GBU6ML-7001M3-45

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 3.8A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

Request a Quote

Standard

1 kV

3.8 A

1 V @ 6 A

5 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBJ5010_HF

Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE GBJ TUB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: -

Request a Quote

Standard

1 kV

50 A

1.1 V @ 25 A

10 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

SM320A

JATTA

BRIDGE RECT 1P 600V 3.0A DO-214A

Diode Type: -
Technology: -
Voltage - Peak Reverse (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

RBV800

EIC SEMICONDUCTOR INC.

BRIGDE RECTIFIER 8A 50V, CASE TY

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, RBV-25
Supplier Device Package: RBV-25

패키지: -

Request a Quote

Standard

50 V

8 A

1 V @ 4 A

10 µA @ 50 V

-40°C ~ 150°C (TJ)

Through Hole

4-SIP, RBV-25

RBV-25

TS35P06G

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 800V 35A TS-6P

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: -

재고3,600

Standard

800 V

35 A

1.1 V @ 17.5 A

10 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

DB202L-BP

Micro Commercial Co

Interface

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DBL-1

패키지: -

Request a Quote

Standard

100 V

2 A

1.1 V @ 2 A

10 µA @ 100 V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DBL-1