페이지 149 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
페이지  149/271
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FS3L30R07W2H3FB11BPSA1
Infineon Technologies

MOD DIODE BRIDGE EASY2B-2-1

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,392
-
-
-
-
-
-
-
-
-
2KBP10M-E4/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 1000V 1PH 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고2,320
Standard
1000V
2A
1.1V @ 3.14A
5µA @ 1000V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
2KBP02M-E4/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 200V 1PH 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고6,704
Standard
200V
2A
1.1V @ 3.14A
5µA @ 200V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
ME700803
Powerex Inc.

DIODE MOD 3PH BRDG 800V 30A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A
  • Current - Reverse Leakage @ Vr: 1.5mA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,720
Standard
800V
30A
1.1V @ 30A
1.5mA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
W08M-BP
Micro Commercial Co

IC BRIDGE RECT 1.5A 800V WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
패키지: 4-Circular, WOM
재고2,688
Standard
800V
1.5A
1V @ 1.5A
5µA @ 800V
-55°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
GBL01/1
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 4A 100V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고7,008
Standard
100V
3A
1.1V @ 4A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
VUO80-08NO1
IXYS

RECT BRIDGE 3PH 82A 800V V1-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 82A
  • Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
  • Current - Reverse Leakage @ Vr: 40µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1-A
  • Supplier Device Package: V1-A
패키지: V1-A
재고6,496
Standard
800V
82A
1.14V @ 30A
40µA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
V1-A
V1-A
TS35P05G D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 35A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고2,144
Standard
600V
35A
1.1V @ 17.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
KBU3506-G
Comchip Technology

RECTIFIER BRIDGE 35A 600V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
패키지: 4-SIP, KBU
재고6,352
Standard
600V
4.2A
1.1V @ 17.5A
10µA @ 600V
-55°C ~ 125°C (TJ)
Through Hole
4-SIP, KBU
KBU
GBU1005 D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 10A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고4,896
Standard
600V
10A
1.1V @ 10A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU6B-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 6A 100V GPP INLINE GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 3.8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고6,768
Standard
100V
3.8A
1V @ 6A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
DBL202G C1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
패키지: 4-DIP (0.300", 7.62mm)
재고7,840
Standard
100V
2A
1.15V @ 2A
2µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
HDBLS102G RDG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, HIGH EFFICIENT

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
패키지: 4-SMD, Gull Wing
재고6,512
Standard
100V
1A
1V @ 1A
5µA @ 100V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
3N248-M4/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 1.5A 200V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고7,472
Standard
200V
1.5A
1V @ 1A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
UG3KB05GTB
SMC Diode Solutions

BRIDGE RECT 1PHASE 50V 3A D3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: D3K
패키지: 4-ESIP
재고6,320
Standard
50V
3A
1.1V @ 3A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
D3K
DB104-BP
Micro Commercial Co

RECTIFIER BRIDGE 1A 400V DB-1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB-1
패키지: 4-EDIP (0.321", 8.15mm)
재고5,136
Standard
400V
1A
1.1V @ 1A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB-1
CDBHM2100L-HF
Comchip Technology

BRIDGE RECTIFIER 100V 2A MBS2

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: MBS-2
패키지: TO-269AA, 4-BESOP
재고5,104
Schottky
100V
2A
850mV @ 2A
1mA @ 100V
-55°C ~ 125°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
MBS-2
3KBP06M-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 3A 600V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고36,252
Standard
600V
3A
1.05V @ 3A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
hot DF1504S-T
Diodes Incorporated

RECTIFIER BRIDGE 400V 1.5A DF-S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DF-S
패키지: 4-SMD, Gull Wing
재고15,648
Standard
400V
1.5A
1.1V @ 1.5A
10µA @ 400V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DF-S
DF20NA160-F1
SanRex Corporation

DIOE MODULE 1600V 20A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
  • Current - Reverse Leakage @ Vr: 8 mA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 5-SIP Exposed Pad
  • Supplier Device Package: 5-SIP
패키지: -
Request a Quote
Standard
1.6 kV
20 A
1.2 V @ 20 A
8 mA @ 1600 V
-40°C ~ 150°C (TJ)
Through Hole
5-SIP Exposed Pad
5-SIP
GBJ15D
GeneSiC Semiconductor

200V 15A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: -
Request a Quote
Standard
200 V
15 A
1.05 V @ 7.5 A
10 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
MMB1G-HF
Comchip Technology

BRIDGE RECT 1P 100V 800MA MMB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 800 mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: MMB
패키지: -
Request a Quote
Standard
100 V
800 mA
1.1 V @ 800 mA
5 µA @ 100 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
MMB
G2SB80-M3-45
Vishay General Semiconductor - Diodes Division

DIODE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
Request a Quote
Standard
800 V
1.5 A
1 V @ 750 mA
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
RS804-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RS-6
  • Supplier Device Package: RS-6
패키지: -
Request a Quote
Standard
400 V
8 A
1.1 V @ 8 A
10 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, RS-6
RS-6
TBS30B-TP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TBS
패키지: -
Request a Quote
Standard
100 V
3 A
950 mV @ 1.5 A
5 µA @ 100 V
-55°C ~ 150°C
Surface Mount
4-SMD, Flat Leads
4-TBS
KBJL406-TU
Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE KBJL TU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJL
  • Supplier Device Package: KBJL
패키지: -
Request a Quote
Standard
600 V
4 A
1 V @ 2 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJL
KBJL
GBP808N
Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE GBP TUB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBP
  • Supplier Device Package: GBP
패키지: -
Request a Quote
Standard
800 V
8 A
1.05 V @ 4 A
1 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBP
GBP
GBU4JL-5303M3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
600 V
3 A
1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU