페이지 154 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
KBP08M-6E4/51	Vishay Semiconductor Diodes Division	BRIDGE RECT 1PH 800V 1.5A KBPM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.57A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM	패키지: 4-SIP, KBPM	재고2,224	Standard	800V	1.5A	1.3V @ 1.57A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBPM	KBPM
MSD30-18	Microsemi Corporation	MOD BRIDGE 3PH 1800V 30A M1 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1800V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A Current - Reverse Leakage @ Vr: 200µA @ 1800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: M1 Supplier Device Package: -	패키지: M1	재고5,296	Standard	1800V	30A	1.6V @ 100A	200µA @ 1800V	-40°C ~ 150°C (TJ)	Chassis Mount	M1	-
APT60DS20HJ	Microsemi Corporation	MOD DIODE 200V SOT-227 Diode Type: Single Phase Technology: Schottky Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 90A Voltage - Forward (Vf) (Max) @ If: 900mV @ 60A Current - Reverse Leakage @ Vr: 1mA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고2,512	Schottky	200V	90A	900mV @ 60A	1mA @ 200V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VSIB4A60-E3/45	Vishay Semiconductor Diodes Division	DIODE 4A 600V SGL BRIDGE 4SIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 2.3A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GSIB-5S Supplier Device Package: GSIB-5S	패키지: 4-SIP, GSIB-5S	재고5,104	Standard	600V	2.3A	1V @ 2A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GSIB-5S	GSIB-5S
GBJ1501	Diodes Incorporated	RECT BRIDGE GPP 100V 15A GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고2,560	Standard	100V	15A	1.05V @ 7.5A	10µA @ 100V	-65°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
RS405L	Diodes Incorporated	RECT BRIDGE GPP 600V 4A RS-4L Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, RS-4L Supplier Device Package: RS-4L	패키지: 4-SIP, RS-4L	재고34,800	Standard	600V	4A	1V @ 3A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, RS-4L	RS-4L
VUO34-16NO1	IXYS	RECT BRIDGE 3PH 36A 1600V V1-A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 36A Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A Current - Reverse Leakage @ Vr: 20µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V1-A Supplier Device Package: V1-A	패키지: V1-A	재고4,624	Standard	1600V	36A	1.13V @ 50A	20µA @ 1600V	-40°C ~ 150°C (TJ)	Chassis Mount	V1-A	V1-A
GBPC5008T	GeneSiC Semiconductor	DIODE BRIDGE 800V 50A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 25A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	패키지: 4-Square, GBPC	재고4,144	Standard	800V	50A	1.2V @ 25A	5µA @ 800V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC2510 T0G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 25A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	패키지: 4-Square, GBPC	재고2,144	Standard	1000V	25A	1.1V @ 12.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
TS6P01G C2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 6A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고7,360	Standard	50V	6A	1.1V @ 6A	10µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
BU10085S-E3/45	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 800V 10A BU-5S Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 3.2A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Supplier Device Package: isoCINK+? BU-5S	패키지: 4-SIP, BU-5S	재고7,264	Standard	800V	3.2A	1.05V @ 5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU-5S	isoCINK+? BU-5S
BU1010A-E3/45	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 1000V 10A BU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU Supplier Device Package: isoCINK+? BU	패키지: 4-SIP, BU	재고3,552	Standard	1000V	3A	1.1V @ 5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+? BU
KBP203	GeneSiC Semiconductor	DIODE BRIDGE 200V 2A KBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP	패키지: 4-SIP, KBP	재고5,904	Standard	200V	2A	1.1V @ 2A	10µA @ 200V	-50°C ~ 150°C (TJ)	Through Hole	4-SIP, KBP	KBP
3N246-E4/51	Vishay Semiconductor Diodes Division	DIODE BRIDGE 1.5A 50V KBPM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM	패키지: 4-SIP, KBPM	재고2,912	Standard	50V	1.5A	1V @ 1A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBPM	KBPM
2KBP04M-M4/51	Vishay Semiconductor Diodes Division	DIODE GPP 2A 400V KBPM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 165°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM	패키지: 4-SIP, KBPM	재고7,904	Standard	400V	2A	1.1V @ 3.14A	5µA @ 400V	-55°C ~ 165°C (TJ)	Through Hole	4-SIP, KBPM	KBPM
GBPC1202W	Fairchild/ON Semiconductor	RECT BRIDGE GPP 12A 200V GBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: 4-Square, GBPC-W	재고6,272	Standard	200V	12A	1.1V @ 6A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
M5060TB600	Crydom Co.	MODULE POWER 60A 600V 3PH BRIDGE Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 50A Current - Reverse Leakage @ Vr: - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고4,224	Standard	600V	60A	1.35V @ 50A	-	-40°C ~ 125°C (TJ)	Chassis Mount	Module	Module
GBJ2002-F	Diodes Incorporated	RECT BRIDGE GPP 200V 20A GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고5,872	Standard	200V	20A	1.05V @ 10A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
HD04-T	Diodes Incorporated	RECT BRIDGE GP 400V 0.8A MINIDIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-MiniDIP	패키지: 4-SMD, Gull Wing	재고2,127,720	Standard	400V	800mA	1V @ 400mA	5µA @ 400V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	4-MiniDIP
GBU4JL-7001E3-45	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1PHASE 600V 3A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
KBU1003G	Taiwan Semiconductor Corporation	DIODE BRIDGE 10A 200V KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	패키지: -	Request a Quote	Standard	200 V	10 A	1.1 V @ 10 A	5 µA @ 200 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
VS-2KBB05	Vishay General Semiconductor - Diodes Division	RECTIFIER BRIDGE 50V 1.9A D-37 Diode Type: - Technology: - Voltage - Peak Reverse (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-
800-4	Microchip Technology	BRIDGE RECTIFIER Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 150 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 150 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ME Supplier Device Package: ME	패키지: -	Request a Quote	Standard	150 V	40 A	950 mV @ 10 A	20 µA @ 150 V	-65°C ~ 150°C (TJ)	Chassis Mount	ME	ME
TS10KL80	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 10A KBJL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBJL Supplier Device Package: KBJL	패키지: -	재고5,994	Standard	800 V	10 A	1 V @ 2 A	5 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBJL	KBJL
TT10J-13	Diodes Incorporated	MEDIUM/HIGH POWER BRIDGE TTL T&R Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: TTL	패키지: -	Request a Quote	Standard	600 V	10 A	1.05 V @ 5 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	TTL
ABF22	SMC Diode Solutions	BRIDGE RECT 1PHASE 200V 2A ABF Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABF	패키지: -	Request a Quote	Standard	200 V	2 A	1 V @ 2 A	5 µA @ 200 V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	ABF
UG2KB60	SMC Diode Solutions	BRIDGE RECT 1PHASE 600V 2A D3K Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-ESIP Supplier Device Package: D3K	패키지: -	재고4,047	Standard	600 V	2 A	1.1 V @ 2 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-ESIP	D3K
KBP105G-C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 1A KBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP	패키지: -	Request a Quote	Standard	600 V	1 A	1 V @ 1 A	10 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBP	KBP

KBP08M-6E4/51

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PH 800V 1.5A KBPM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.57A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

재고2,224

Standard

800V

1.5A

1.3V @ 1.57A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBPM

KBPM

MSD30-18

Microsemi Corporation

MOD BRIDGE 3PH 1800V 30A M1

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1800V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Reverse Leakage @ Vr: 200µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M1
Supplier Device Package: -

패키지: M1

재고5,296

Standard

1800V

30A

1.6V @ 100A

200µA @ 1800V

-40°C ~ 150°C (TJ)

Chassis Mount

M1

-

APT60DS20HJ

Microsemi Corporation

MOD DIODE 200V SOT-227

Diode Type: Single Phase
Technology: Schottky
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 90A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 60A
Current - Reverse Leakage @ Vr: 1mA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고2,512

Schottky

200V

90A

900mV @ 60A

1mA @ 200V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

VSIB4A60-E3/45

Vishay Semiconductor Diodes Division

DIODE 4A 600V SGL BRIDGE 4SIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 2.3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Supplier Device Package: GSIB-5S

패키지: 4-SIP, GSIB-5S

재고5,104

Standard

600V

2.3A

1V @ 2A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GSIB-5S

GSIB-5S

GBJ1501

Diodes Incorporated

RECT BRIDGE GPP 100V 15A GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고2,560

Standard

100V

15A

1.05V @ 7.5A

10µA @ 100V

-65°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

RS405L

Diodes Incorporated

RECT BRIDGE GPP 600V 4A RS-4L

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, RS-4L
Supplier Device Package: RS-4L

패키지: 4-SIP, RS-4L

재고34,800

Standard

600V

4A

1V @ 3A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, RS-4L

RS-4L

VUO34-16NO1

IXYS

RECT BRIDGE 3PH 36A 1600V V1-A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 36A
Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
Current - Reverse Leakage @ Vr: 20µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V1-A
Supplier Device Package: V1-A

패키지: V1-A

재고4,624

Standard

1600V

36A

1.13V @ 50A

20µA @ 1600V

-40°C ~ 150°C (TJ)

Chassis Mount

V1-A

GBPC5008T

GeneSiC Semiconductor

DIODE BRIDGE 800V 50A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 25A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

패키지: 4-Square, GBPC

재고4,144

Standard

800V

50A

1.2V @ 25A

5µA @ 800V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC

GBPC

GBPC2510 T0G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

패키지: 4-Square, GBPC

재고2,144

Standard

1000V

25A

1.1V @ 12.5A

5µA @ 1000V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC

GBPC

TS6P01G C2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Current - Reverse Leakage @ Vr: 10µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

재고7,360

Standard

50V

6A

1.1V @ 6A

10µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

BU10085S-E3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 10A BU-5S

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 3.2A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Supplier Device Package: isoCINK+? BU-5S

패키지: 4-SIP, BU-5S

재고7,264

Standard

800V

3.2A

1.05V @ 5A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU-5S

isoCINK+? BU-5S

BU1010A-E3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1000V 10A BU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Supplier Device Package: isoCINK+? BU

패키지: 4-SIP, BU

재고3,552

Standard

1000V

3A

1.1V @ 5A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU

isoCINK+? BU

KBP203

GeneSiC Semiconductor

DIODE BRIDGE 200V 2A KBP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Supplier Device Package: KBP

패키지: 4-SIP, KBP

재고5,904

Standard

200V

2A

1.1V @ 2A

10µA @ 200V

-50°C ~ 150°C (TJ)

Through Hole

4-SIP, KBP

KBP

3N246-E4/51

Vishay Semiconductor Diodes Division

DIODE BRIDGE 1.5A 50V KBPM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

재고2,912

Standard

50V

1.5A

1V @ 1A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBPM

KBPM

2KBP04M-M4/51

Vishay Semiconductor Diodes Division

DIODE GPP 2A 400V KBPM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 165°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

재고7,904

Standard

400V

2A

1.1V @ 3.14A

5µA @ 400V

-55°C ~ 165°C (TJ)

Through Hole

4-SIP, KBPM

KBPM

GBPC1202W

Fairchild/ON Semiconductor

RECT BRIDGE GPP 12A 200V GBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

재고6,272

Standard

200V

12A

1.1V @ 6A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

M5060TB600

Crydom Co.

MODULE POWER 60A 600V 3PH BRIDGE

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 50A
Current - Reverse Leakage @ Vr: -
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고4,224

Standard

600V

60A

1.35V @ 50A

-

-40°C ~ 125°C (TJ)

Chassis Mount

Module

GBJ2002-F

Diodes Incorporated

RECT BRIDGE GPP 200V 20A GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고5,872

Standard

200V

20A

1.05V @ 10A

10µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

HD04-T

Diodes Incorporated

RECT BRIDGE GP 400V 0.8A MINIDIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-MiniDIP

패키지: 4-SMD, Gull Wing

재고2,127,720

Standard

400V

800mA

1V @ 400mA

5µA @ 400V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

4-MiniDIP

GBU4JL-7001E3-45

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

Request a Quote

Standard

600 V

3 A

1 V @ 4 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

KBU1003G

Taiwan Semiconductor Corporation

DIODE BRIDGE 10A 200V KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

패키지: -

Request a Quote

Standard

200 V

10 A

1.1 V @ 10 A

5 µA @ 200 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

VS-2KBB05

Vishay General Semiconductor - Diodes Division

RECTIFIER BRIDGE 50V 1.9A D-37

Diode Type: -
Technology: -
Voltage - Peak Reverse (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

800-4

Microchip Technology

BRIDGE RECTIFIER

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 150 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ME
Supplier Device Package: ME

패키지: -

Request a Quote

Standard

150 V

40 A

950 mV @ 10 A

20 µA @ 150 V

-65°C ~ 150°C (TJ)

Chassis Mount

ME

TS10KL80

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 10A KBJL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJL
Supplier Device Package: KBJL

패키지: -

재고5,994

Standard

800 V

10 A

1 V @ 2 A

5 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBJL

KBJL

TT10J-13

Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE TTL T&R

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: TTL

패키지: -

Request a Quote

Standard

600 V

10 A

1.05 V @ 5 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

TTL

ABF22

SMC Diode Solutions

BRIDGE RECT 1PHASE 200V 2A ABF

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: ABF

패키지: -

Request a Quote

Standard

200 V

2 A

1 V @ 2 A

5 µA @ 200 V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

ABF

UG2KB60

SMC Diode Solutions

BRIDGE RECT 1PHASE 600V 2A D3K

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP
Supplier Device Package: D3K

패키지: -

재고4,047

Standard

600 V

2 A

1.1 V @ 2 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-ESIP

D3K

KBP105G-C2G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 1A KBP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Supplier Device Package: KBP

패키지: -

Request a Quote

Standard

600 V

1 A

1 V @ 1 A

10 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBP

KBP