페이지 168 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
페이지  168/271
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설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CBR10F-J040
Central Semiconductor Corp

RECT BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, CM
  • Supplier Device Package: CM
패키지: 4-Square, CM
재고2,400
Standard
400V
10A
1.3V @ 5A
10µA @ 400V
-
Through Hole
4-Square, CM
CM
DBF60G
ON Semiconductor

DIODE BRIDGE 1PH 6A 600V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, DBF
  • Supplier Device Package: -
패키지: 4-SIP, DBF
재고3,104
Standard
600V
2.8A
1.05V @ 2.5A
10µA @ 600V
150°C (TJ)
Through Hole
4-SIP, DBF
-
VSIB640-E3/45
Vishay Semiconductor Diodes Division

DIODE 6A 400V SGL BRIDGE 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 2.8A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
패키지: 4-SIP, GSIB-5S
재고5,040
Standard
400V
2.8A
950mV @ 3A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
3N254-E4/45
Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 100V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고6,384
Standard
100V
2A
1.1V @ 3.14A
5µA @ 100V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
hot GBPC3508W
Diodes Incorporated

RECT BRIDGE GPP 800V 35A GBPCW

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고7,200
Standard
800V
35A
1.1V @ 17.5A
5µA @ 800V
-65°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
hot KBL04
Fairchild/ON Semiconductor

IC BRIDGE RECT 4A 400V KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고3,344
Standard
400V
4A
1.1V @ 4A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
W10G
Diodes Incorporated

RECT BRIDGE GPP 1000V 1.5A WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
패키지: 4-Circular, WOG
재고5,440
Standard
1000V
1.5A
1V @ 1.5A
5µA @ 1000V
-65°C ~ 150°C (TJ)
Through Hole
4-Circular, WOG
WOG
KBPC50005T
GeneSiC Semiconductor

DIODE BRIDGE 50V 50A KBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, KBPC-T
  • Supplier Device Package: KBPC
패키지: 4-Square, KBPC-T
재고5,120
Standard
50V
50A
1.1V @ 25A
5µA @ 50V
-55°C ~ 150°C (TJ)
Chassis Mount
4-Square, KBPC-T
KBPC
G5SBA20-M3/51
Vishay Semiconductor Diodes Division

DIODE 1PH 6A 200V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고5,312
Standard
200V
2.8A
1.05V @ 3A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
3KBP08M-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 3A 800V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고2,352
Standard
800V
3A
1.05V @ 3A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
EDF1DS-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1A 200V 50NS 4SMD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DFS
패키지: 4-SMD, Gull Wing
재고2,320
Standard
200V
1A
1.05V @ 1A
5µA @ 200V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DFS
DBLS159GHRDG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
  • Current - Reverse Leakage @ Vr: 2µA @ 1400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
패키지: 4-SMD, Gull Wing
재고6,528
Standard
1400V
1.5A
1.25V @ 1.5A
2µA @ 1400V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
ABS15JHREG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
패키지: 4-SMD, Gull Wing
재고3,088
Standard
600V
1.5A
1V @ 1.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
VS-26MB160A
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1600V 25A D-34A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 10µA @ 1600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, D-34
  • Supplier Device Package: D-34
패키지: 4-Square, D-34
재고7,904
Standard
1600V
25A
-
10µA @ 1600V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, D-34
D-34
Z4GP206-HF
Comchip Technology

RECT BRIDGE GP 600V 2A ABSZ4

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: ABS(Z4)
패키지: 4-SMD, No Lead
재고3,312
Standard
600V
2A
1V @ 2A
5µA @ 600V
-55°C ~ 175°C (TJ)
Surface Mount
4-SMD, No Lead
ABS(Z4)
GBPC602-E4/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 6A 200V GBPC6

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-6
  • Supplier Device Package: GBPC6
패키지: 4-Square, GBPC-6
재고13,728
Standard
200V
3A
1V @ 3A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-6
GBPC6
CBRHD-01 TR13
Central Semiconductor Corp

IC RECT BRIDGE 100V 0.5A HD DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-HD DIP
패키지: 4-SMD, Gull Wing
재고27,066
Standard
100V
500mA
1V @ 400mA
5µA @ 100V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-HD DIP
MDNA280UB2200PTED
IXYS

BIPOLARMODULE-RECTIFIER+BRAKE E2

  • Diode Type: Three Phase (Braking)
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 2.2 kV
  • Current - Average Rectified (Io): 280 A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 270 A
  • Current - Reverse Leakage @ Vr: 100 µA @ 2200 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
패키지: -
Request a Quote
Standard
2.2 kV
280 A
1.75 V @ 270 A
100 µA @ 2200 V
-40°C ~ 150°C (TJ)
Chassis Mount
E2
E2
NTE5745
NTE Electronics, Inc

R-3 PHASE BRIDGE 1600V

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 100 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
  • Current - Reverse Leakage @ Vr: 8 mA @ 1600 V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Standard
1.6 kV
100 A
1.3 V @ 100 A
8 mA @ 1600 V
-
Chassis Mount
Module
-
TS20P05G
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 20A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: -
재고7,314
Standard
600 V
20 A
1.1 V @ 20 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
MDMA120U1600VA
IXYS

3-PH. REC. BRIDGE, B6U

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 120 A
  • Voltage - Forward (Vf) (Max) @ If: 1.42 V @ 120 A
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: V1-A
패키지: -
재고6
Standard
1.6 kV
120 A
1.42 V @ 120 A
40 µA @ 1600 V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
V1-A
GBJ25005-05-G
Comchip Technology

BRIDGE RECT 1PHASE 50V 25A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: -
Request a Quote
Standard
50 V
25 A
1 V @ 12.5 A
10 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBU8JL-7014M3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3.9A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3.9 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
600 V
3.9 A
1 V @ 8 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU3008_T0_00601
Panjit International Inc.

GBU PACKAGE, 35A/1000V STANDARD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 30 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU-2
패키지: -
재고5,958
Standard
800 V
30 A
1.05 V @ 15 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU-2
RBV2504
EIC SEMICONDUCTOR INC.

BRIGDE RECTIFIER 25A 400V, CASE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RBV-25
  • Supplier Device Package: RBV-25
패키지: -
Request a Quote
Standard
400 V
25 A
1.1 V @ 12.5 A
10 µA @ 400 V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, RBV-25
RBV-25
MSB40M
MDD

BRIDGE RECT 1PHASE 1KV 4A UMSB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: UMSB
패키지: -
Request a Quote
Standard
1 kV
-
1.1 V @ 4 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Leads
UMSB
GBJ20M_T0_00101
Panjit International Inc.

GBJ-1, GENERAL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ-1
패키지: -
재고1,794
Standard
1 kV
20 A
1 V @ 10 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ-1
ABS2
SMC Diode Solutions

BRIDGE RECT 1P 200V 500MA ABS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 500 mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
패키지: -
Request a Quote
Standard
200 V
500 mA
1.1 V @ 800 mA
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS