페이지 191 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
RS605	Diodes Incorporated	RECT SILICON 600V 6A RADIAL LEAD Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, RS-6 Supplier Device Package: RS-6	패키지: 4-SIP, RS-6	재고32,808	Standard	600V	6A	1V @ 3A	10µA @ 600V	-55°C ~ 125°C (TJ)	Through Hole	4-SIP, RS-6	RS-6
APTDC40H1201G	Microsemi Corporation	POWER MODULE DIODE 1200V 40A SP1 Diode Type: Single Phase Technology: Silicon Carbide Schottky Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A Current - Reverse Leakage @ Vr: 800µA @ 1200V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고4,352	Silicon Carbide Schottky	1200V	40A	1.8V @ 40A	800µA @ 1200V	-40°C ~ 175°C (TJ)	Chassis Mount	SP1	SP1
VUO86-16NO7	IXYS	RECT BRIDGE 3PH 1600V ECO-PAC1 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 86A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A Current - Reverse Leakage @ Vr: 40µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1 Supplier Device Package: ECO-PAC1	패키지: ECO-PAC1	재고7,740	Standard	1600V	86A	1.14V @ 30A	40µA @ 1600V	-40°C ~ 150°C (TJ)	Chassis Mount	ECO-PAC1	ECO-PAC1
GBPC5001M T0G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 50A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC40-M Supplier Device Package: GBPC40-M	패키지: 4-Square, GBPC40-M	재고7,632	Standard	100V	50A	1.1V @ 25A	10µA @ 100V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC40-M	GBPC40-M
KBPC1501W	GeneSiC Semiconductor	DIODE BRIDGE 15A 100V 1PH KBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Supplier Device Package: KBPC-W	패키지: 4-Square, KBPC-W	재고7,152	Standard	100V	15A	1.1V @ 7.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, KBPC-W	KBPC-W
GSIB620N-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT 6A 200V GSIB-5S Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GSIB-5S Supplier Device Package: GSIB-5S	패키지: 4-SIP, GSIB-5S	재고2,576	Standard	200V	6A	950mV @ 3A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GSIB-5S	GSIB-5S
GBU4K-E3/51	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 800V GPP GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고26,460	Standard	800V	3A	1V @ 4A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBL06	GeneSiC Semiconductor	DIODE BRIDGE 600V 4A GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: 4-SIP, GBL	재고129,756	Standard	600V	4A	1.1V @ 4A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
DBL205G C1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 2A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Current - Reverse Leakage @ Vr: 2µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: 4-DIP (0.300", 7.62mm)	재고2,736	Standard	600V	2A	1.15V @ 2A	2µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	DBL
G2SBA80-E3/45	Vishay Semiconductor Diodes Division	DIODE GPP 1.5A 800V GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: 4-SIP, GBL	재고5,488	Standard	800V	1.5A	1V @ 750mA	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
DBLS203G C1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 2A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Current - Reverse Leakage @ Vr: 2µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	패키지: 4-SMD, Gull Wing	재고3,200	Standard	200V	2A	1.15V @ 2A	2µA @ 200V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	DBLS
3N253-E4/51	Vishay Semiconductor Diodes Division	DIODE BRIDGE 2A 50V 4SIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 165°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM	패키지: 4-SIP, KBPM	재고6,592	Standard	50V	2A	1.1V @ 3.14A	5µA @ 50V	-55°C ~ 165°C (TJ)	Through Hole	4-SIP, KBPM	KBPM
CBRHD-04 BK	Central Semiconductor Corp	RECT BRIDGE 500MA 400V 4HD DIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-HD DIP	패키지: 4-SMD, Gull Wing	재고2,000	Standard	400V	500mA	1V @ 400mA	5µA @ 400V	-65°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	4-HD DIP
DB101TB	SMC Diode Solutions	BRIDGE RECT 1PHASE 50V 1A DB-M Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB-M	패키지: 4-EDIP (0.321", 8.15mm)	재고6,656	Standard	50V	1A	1.1V @ 1A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB-M
GBU8D-E3/45	Vishay Semiconductor Diodes Division	DIODE GPP 8A 200V GPP INLINE GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고2,864	Standard	200V	3.9A	1V @ 8A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
DFB2580	Fairchild/ON Semiconductor	BRIDGE RECT 800V 25A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고16,716	Standard	800V	25A	1.1V @ 25A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
PB62-BP	Micro Commercial Co	RECTIFIER BRIDGE 6A 200V PB-6 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, PB-6 Supplier Device Package: PB-6	패키지: 4-Square, PB-6	재고31,722	Standard	200V	6A	1.1V @ 3A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, PB-6	PB-6
2W02G-E4/51	Vishay Semiconductor Diodes Division	DIODE BRIDGE 2A 200V 1PH WOG Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOG Supplier Device Package: WOG	패키지: 4-Circular, WOG	재고18,216	Standard	200V	2A	1.1V @ 2A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-Circular, WOG	WOG
PB25005-BP	Micro Commercial Co	Interface Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-ESIP, PB Supplier Device Package: PB	패키지: -	Request a Quote	Standard	50 V	25 A	1 V @ 12.5 A	5 µA @ 50 V	-55°C ~ 150°C (TJ)	Through Hole	4-ESIP, PB	PB
KBU407G-T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 4A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	패키지: -	Request a Quote	Standard	1 kV	4 A	1.1 V @ 4 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
HDBL104GH	Taiwan Semiconductor Corporation	50NS, 1A, 400V, HIGH EFFICIENT R Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: -	재고15,000	Standard	400 V	1 A	1.3 V @ 1 A	5 µA @ 400 V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	DBL
483-02	Microchip Technology	BRIDGE RECTIFIER Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 39 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: ME Supplier Device Package: ME	패키지: -	Request a Quote	Standard	400 V	25 A	1.3 V @ 39 A	1 µA @ 400 V	-65°C ~ 175°C (TJ)	Chassis Mount	ME	ME
RS607	Rectron USA	BRIDGE RECT GLASS 1000V 6A RS-6L Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A Current - Reverse Leakage @ Vr: 200 nA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, RS-6 Supplier Device Package: RS-6	패키지: -	Request a Quote	Standard	1 kV	6 A	1.05 V @ 6 A	200 nA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, RS-6	RS-6
803-4	Microchip Technology	BRIDGE RECTIFIER Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 150 V Current - Average Rectified (Io): 22.5 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Square, MB Supplier Device Package: MB	패키지: -	Request a Quote	Standard	150 V	22.5 A	950 mV @ 6 A	10 µA @ 150 V	-65°C ~ 150°C (TJ)	Chassis Mount	4-Square, MB	MB
DBL205G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 2A DBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: -	재고15,000	Standard	600 V	2 A	1.15 V @ 2 A	2 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	DBL
UR4KB80-B	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 4A D3K Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-ESIP Supplier Device Package: D3K	패키지: -	재고16,062	Standard	800 V	4 A	1 V @ 2 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-ESIP	D3K
TS25P07GH	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 25A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: -	재고3,600	Standard	1 kV	25 A	1.1 V @ 25 A	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
MF10S	Surge	1A -1000V - MBS (TO-269AA) - BRI Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 mA Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-269AA, 4-BESOP Supplier Device Package: TO-269AA (MBS)	패키지: -	Request a Quote	Standard	1 kV	500 mA	1.1 V @ 400 mA	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Surface Mount	TO-269AA, 4-BESOP	TO-269AA (MBS)

RS605

Diodes Incorporated

RECT SILICON 600V 6A RADIAL LEAD

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, RS-6
Supplier Device Package: RS-6

패키지: 4-SIP, RS-6

재고32,808

Standard

600V

6A

1V @ 3A

10µA @ 600V

-55°C ~ 125°C (TJ)

Through Hole

4-SIP, RS-6

RS-6

APTDC40H1201G

Microsemi Corporation

POWER MODULE DIODE 1200V 40A SP1

Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고4,352

Silicon Carbide Schottky

1200V

40A

1.8V @ 40A

800µA @ 1200V

-40°C ~ 175°C (TJ)

Chassis Mount

SP1

VUO86-16NO7

IXYS

RECT BRIDGE 3PH 1600V ECO-PAC1

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 86A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
Current - Reverse Leakage @ Vr: 40µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Supplier Device Package: ECO-PAC1

패키지: ECO-PAC1

재고7,740

Standard

1600V

86A

1.14V @ 30A

40µA @ 1600V

-40°C ~ 150°C (TJ)

Chassis Mount

ECO-PAC1

GBPC5001M T0G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 50A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC40-M
Supplier Device Package: GBPC40-M

패키지: 4-Square, GBPC40-M

재고7,632

Standard

100V

50A

1.1V @ 25A

10µA @ 100V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC40-M

GBPC40-M

KBPC1501W

GeneSiC Semiconductor

DIODE BRIDGE 15A 100V 1PH KBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Supplier Device Package: KBPC-W

패키지: 4-Square, KBPC-W

재고7,152

Standard

100V

15A

1.1V @ 7.5A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, KBPC-W

KBPC-W

GSIB620N-M3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT 6A 200V GSIB-5S

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Supplier Device Package: GSIB-5S

패키지: 4-SIP, GSIB-5S

재고2,576

Standard

200V

6A

950mV @ 3A

10µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GSIB-5S

GSIB-5S

GBU4K-E3/51

Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 800V GPP GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고26,460

Standard

800V

3A

1V @ 4A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBL06

GeneSiC Semiconductor

DIODE BRIDGE 600V 4A GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: 4-SIP, GBL

재고129,756

Standard

600V

4A

1.1V @ 4A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

DBL205G C1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Current - Reverse Leakage @ Vr: 2µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: DBL

패키지: 4-DIP (0.300", 7.62mm)

재고2,736

Standard

600V

2A

1.15V @ 2A

2µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

DBL

G2SBA80-E3/45

Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 800V GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: 4-SIP, GBL

재고5,488

Standard

800V

1.5A

1V @ 750mA

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

DBLS203G C1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Current - Reverse Leakage @ Vr: 2µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: DBLS

패키지: 4-SMD, Gull Wing

재고3,200

Standard

200V

2A

1.15V @ 2A

2µA @ 200V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

DBLS

3N253-E4/51

Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 50V 4SIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 165°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

재고6,592

Standard

50V

2A

1.1V @ 3.14A

5µA @ 50V

-55°C ~ 165°C (TJ)

Through Hole

4-SIP, KBPM

KBPM

CBRHD-04 BK

Central Semiconductor Corp

RECT BRIDGE 500MA 400V 4HD DIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-HD DIP

패키지: 4-SMD, Gull Wing

재고2,000

Standard

400V

500mA

1V @ 400mA

5µA @ 400V

-65°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

4-HD DIP

DB101TB

SMC Diode Solutions

BRIDGE RECT 1PHASE 50V 1A DB-M

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB-M

패키지: 4-EDIP (0.321", 8.15mm)

재고6,656

Standard

50V

1A

1.1V @ 1A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.321", 8.15mm)

DB-M

GBU8D-E3/45

Vishay Semiconductor Diodes Division

DIODE GPP 8A 200V GPP INLINE GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고2,864

Standard

200V

3.9A

1V @ 8A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

DFB2580

Fairchild/ON Semiconductor

BRIDGE RECT 800V 25A TS-6P

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

재고16,716

Standard

800V

25A

1.1V @ 25A

10µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

PB62-BP

Micro Commercial Co

RECTIFIER BRIDGE 6A 200V PB-6

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, PB-6
Supplier Device Package: PB-6

패키지: 4-Square, PB-6

재고31,722

Standard

200V

6A

1.1V @ 3A

10µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, PB-6

PB-6

2W02G-E4/51

Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 200V 1PH WOG

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOG
Supplier Device Package: WOG

패키지: 4-Circular, WOG

재고18,216

Standard

200V

2A

1.1V @ 2A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-Circular, WOG

WOG

PB25005-BP

Micro Commercial Co

Interface

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP, PB
Supplier Device Package: PB

패키지: -

Request a Quote

Standard

50 V

25 A

1 V @ 12.5 A

5 µA @ 50 V

-55°C ~ 150°C (TJ)

Through Hole

4-ESIP, PB

PB

KBU407G-T0G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 4A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

패키지: -

Request a Quote

Standard

1 kV

4 A

1.1 V @ 4 A

5 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

HDBL104GH

Taiwan Semiconductor Corporation

50NS, 1A, 400V, HIGH EFFICIENT R

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: DBL

패키지: -

재고15,000

Standard

400 V

1 A

1.3 V @ 1 A

5 µA @ 400 V

-55°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

DBL

483-02

Microchip Technology

BRIDGE RECTIFIER

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 39 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ME
Supplier Device Package: ME

패키지: -

Request a Quote

Standard

400 V

25 A

1.3 V @ 39 A

1 µA @ 400 V

-65°C ~ 175°C (TJ)

Chassis Mount

ME

RS607

Rectron USA

BRIDGE RECT GLASS 1000V 6A RS-6L

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, RS-6
Supplier Device Package: RS-6

패키지: -

Request a Quote

Standard

1 kV

6 A

1.05 V @ 6 A

200 nA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, RS-6

RS-6

803-4

Microchip Technology

BRIDGE RECTIFIER

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 150 V
Current - Average Rectified (Io): 22.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 4-Square, MB
Supplier Device Package: MB

패키지: -

Request a Quote

Standard

150 V

22.5 A

950 mV @ 6 A

10 µA @ 150 V

-65°C ~ 150°C (TJ)

Chassis Mount

4-Square, MB

MB

DBL205G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 2A DBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: DBL

패키지: -

재고15,000

Standard

600 V

2 A

1.15 V @ 2 A

2 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

DBL

UR4KB80-B

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 4A D3K

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP
Supplier Device Package: D3K

패키지: -

재고16,062

Standard

800 V

4 A

1 V @ 2 A

10 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-ESIP

D3K

TS25P07GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 25A TS-6P

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: -

재고3,600

Standard

1 kV

25 A

1.1 V @ 25 A

10 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

MF10S

Surge

1A -1000V - MBS (TO-269AA) - BRI

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-269AA, 4-BESOP
Supplier Device Package: TO-269AA (MBS)

패키지: -

Request a Quote

Standard

1 kV

500 mA

1.1 V @ 400 mA

5 µA @ 1000 V

-55°C ~ 150°C (TJ)

Surface Mount

TO-269AA, 4-BESOP

TO-269AA (MBS)