페이지 200 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
페이지  200/271
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설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CMFBR-6F BK
Central Semiconductor Corp

DIODE RECTIFIER BRIDGE SOT143

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 60V
  • Current - Average Rectified (Io): 140mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 20mA
  • Current - Reverse Leakage @ Vr: 10nA @ 50V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
패키지: TO-253-4, TO-253AA
재고4,960
Standard
60V
140mA
1V @ 20mA
10nA @ 50V
-65°C ~ 150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
VS-112MT120KPBF
Vishay Semiconductor Diodes Division

POWER MOD 3PH BRIDGE 110A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MT-K Module
  • Supplier Device Package: MT-K
패키지: MT-K Module
재고5,984
Standard
1200V
110A
-
-
-40°C ~ 150°C (TJ)
Chassis Mount
MT-K Module
MT-K
hot MSDM75-16
Microsemi Corporation

MOD BRIDGE 3PH 1600V 75A M2-1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
  • Current - Reverse Leakage @ Vr: 500µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: M2-1
패키지: Module
재고6,224
Standard
1600V
75A
1.6V @ 150A
500µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
M2-1
GBPC2504W-G
Comchip Technology

RECTIFIER BRIDGE 25A 400V GBPCW

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고3,456
Standard
400V
25A
1.1V @ 12.5A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
TS40P06GHC2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 40A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고4,480
Standard
800V
40A
1.1V @ 20A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS20P05GHC2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 20A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고2,352
Standard
600V
20A
1.1V @ 20A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
BU2508-E3/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 25A BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
패키지: 4-SIP, BU
재고6,352
Standard
800V
3.5A
1.05V @ 12.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
GSIB640N-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 6A 400V GSIB-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
패키지: 4-SIP, GSIB-5S
재고5,456
Standard
400V
6A
950mV @ 3A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GSIB2520-E3/45
Vishay Semiconductor Diodes Division

DIODE 25A 200V GSIB-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
패키지: 4-SIP, GSIB-5S
재고3,552
Standard
200V
3.5A
1V @ 12.5A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
G5SBA60-M3/51
Vishay Semiconductor Diodes Division

DIODE 1PH 6A 600V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고3,136
Standard
600V
2.8A
1.05V @ 3A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
NSR2030QMUTAG
ON Semiconductor

RECTIFIER BRIDGE 30V 2A 4UDFN

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
  • Current - Reverse Leakage @ Vr: 20µA @ 30V
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-UDFN (3.5x3.5)
패키지: 4-UDFN Exposed Pad
재고6,496
Schottky
30V
2A
650mV @ 2A
20µA @ 30V
125°C (TJ)
Surface Mount
4-UDFN Exposed Pad
4-UDFN (3.5x3.5)
DBLS107GHRDG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 2µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
패키지: 4-SMD, Gull Wing
재고6,800
Standard
1000V
1A
1.1V @ 1A
2µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
FTB4F-15FTR
SMC Diode Solutions

BRIDGE RECT 1PHASE 400V 1.5A ABF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABF
패키지: 4-SMD, Gull Wing
재고7,616
Standard
400V
1.5A
1.3V @ 1.5A
5µA @ 400V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABF
MB1FTR
SMC Diode Solutions

BRIDGE RECT 1PH 100V 500MA MBF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: MBF
패키지: 4-SMD, Gull Wing
재고3,984
Standard
100V
500mA
1.1V @ 800mA
5µA @ 100V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
MBF
GBJ1010-F
Diodes Incorporated

RECT BRIDGE GPP 1000V 10A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: 4-SIP, GBJ
재고581,322
Standard
1000V
10A
1.05V @ 5A
10µA @ 1000V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
CDBHD160L-G
Comchip Technology

DIODE SCHOTTKY 1A 60V TO-269AA

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 625mV @ 1A
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: Mini-Dip (TO-269AA)
패키지: TO-269AA, 4-BESOP
재고147,870
Schottky
60V
1A
625mV @ 1A
500µA @ 60V
-55°C ~ 125°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
Mini-Dip (TO-269AA)
B80C1000G-E4/51
Vishay Semiconductor Diodes Division

DIODE BRIDGE 1A 125V WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 125V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 125V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
패키지: 4-Circular, WOG
재고32,550
Standard
125V
1A
1V @ 1A
10µA @ 125V
-40°C ~ 125°C (TJ)
Through Hole
4-Circular, WOG
WOG
CBR35-020PW
Central Semiconductor Corp

BRIDGE RECT 1P 200V 4CASE FPW

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, FPW
  • Supplier Device Package: 4-Case FPW
패키지: -
Request a Quote
Standard
200 V
35 A
1.2 V @ 17.5 A
10 µA @ 200 V
-65°C ~ 150°C (TJ)
Through Hole
4-Square, FPW
4-Case FPW
TS15PL05G
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 15A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: -
재고3,600
Standard
600 V
15 A
900 mV @ 7.5 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
LMB16S-TP
Micro Commercial Co

BRIDGE RECT 60V 1A LMBS-1

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 60 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: LMBS-1
패키지: -
재고83,199
Schottky
60 V
1 A
650 mV @ 500 mA
500 µA @ 60 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
LMBS-1
GBU4MP_T0_00101
Panjit International Inc.

GBU-1, GENERAL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU-1
패키지: -
재고3,000
Standard
1 kV
4 A
1 V @ 2 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU-1
UMB10F
Rectron USA

BRDGE RCT GLASS 1000V .5A SOF2-4

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 500 mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 mA
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Lead
  • Supplier Device Package: 4-SOF2
패키지: -
Request a Quote
Standard
1 kV
500 mA
1.1 V @ 400 mA
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Lead
4-SOF2
T25JA07G-K
Taiwan Semiconductor Corporation

25A, 1000V, STANDARD BRIDGE RECT

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 25 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: -
재고4,314
Standard
1 kV
25 A
1.15 V @ 25 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBJ10J
GeneSiC Semiconductor

600V 10A GBJ SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: -
Request a Quote
Standard
600 V
10 A
1.05 V @ 5 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
KBJA4005-BP
Micro Commercial Co

DIODE BRIDGE 4A JB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JB
  • Supplier Device Package: JB
패키지: -
Request a Quote
Standard
50 V
4 A
1.05 V @ 2 A
10 µA @ 50 V
-55°C ~ 150°C
Through Hole
4-SIP, JB
JB
KBPC3510FP
Diotec Semiconductor

BRIDGE RECT 1000V 35A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, KBPC35
  • Supplier Device Package: KBPC35
패키지: -
재고1,197
Standard
1 kV
35 A
1.1 V @ 17.5 A
10 µA @ 1000 V
-50°C ~ 150°C (TJ)
Chassis Mount
4-Square, KBPC35
KBPC35
RBV2510
EIC SEMICONDUCTOR INC.

BRIGDE RECTIFIER 25A 1000V, CASE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RBV-25
  • Supplier Device Package: RBV-25
패키지: -
Request a Quote
Standard
1 kV
25 A
1.1 V @ 12.5 A
10 µA @ 1000 V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, RBV-25
RBV-25
KBJA606-BP
Micro Commercial Co

DIODE BRIDGE 6A JB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JB
  • Supplier Device Package: JB
패키지: -
Request a Quote
Standard
600 V
6 A
1.05 V @ 3 A
10 µA @ 600 V
-55°C ~ 150°C
Through Hole
4-SIP, JB
JB