페이지 214 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
KBP202G-BP	Micro Commercial Co	IC BRIDGE RECT 2A 200V GBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBP Supplier Device Package: GBP	패키지: 4-SIP, GBP	재고3,776	Standard	200V	2A	1.1V @ 2A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBP	GBP
VS-52MT120KPBF	Vishay Semiconductor Diodes Division	POWER MOD 3PH BRIDGE 55A MTK Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 55A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: MT-K Module Supplier Device Package: MT-K	패키지: MT-K Module	재고2,400	Standard	1200V	55A	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	MT-K Module	MT-K
VUC36-16GO2	IXYS	DIODE BRIDGE FAST 1600V KAMM-MOD Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 34A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 55A Current - Reverse Leakage @ Vr: 5mA @ 1600V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: KAMM Supplier Device Package: KAMM	패키지: KAMM	재고3,488	Standard	1600V	34A	1.85V @ 55A	5mA @ 1600V	-40°C ~ 125°C (TJ)	Chassis Mount	KAMM	KAMM
VBO45-16NO7	IXYS	DIODE BRIDGE 45A 1600V FO-T-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A Current - Reverse Leakage @ Vr: 500µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A Supplier Device Package: FO-T-A	패키지: FO-T-A	재고3,872	Standard	1600V	45A	1.7V @ 150A	500µA @ 1600V	-40°C ~ 150°C (TJ)	Chassis Mount	FO-T-A	FO-T-A
VBO25-12NO2	IXYS	DIODE BRIDGE 31A 1200V STD FO-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 38A Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A Current - Reverse Leakage @ Vr: 300µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, FO-A Supplier Device Package: FO-A	패키지: 4-Square, FO-A	재고3,568	Standard	1200V	38A	1.36V @ 55A	300µA @ 1200V	-40°C ~ 150°C (TJ)	QC Terminal	4-Square, FO-A	FO-A
TS15PL06GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 15A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 930mV @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고4,896	Standard	800V	15A	930mV @ 7.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
GBPC15005W-E4/51	Vishay Semiconductor Diodes Division	DIODE 1PH 15A 50V GBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: 4-Square, GBPC-W	재고6,320	Standard	50V	15A	1.1V @ 7.5A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC1208W-E4/51	Vishay Semiconductor Diodes Division	DIODE 1PH 12A 800V GBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: 4-Square, GBPC-W	재고2,176	Standard	800V	12A	1.1V @ 6A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
TS25P02GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 25A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고6,912	Standard	100V	25A	1.1V @ 25A	10µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
GBU1008	Diodes Incorporated	RECT BRIDGE GPP 10A 800V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1V @ 5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고5,440	Standard	800V	10A	1V @ 5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
BU1006-M3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 600V 10A BU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU Supplier Device Package: isoCINK+? BU	패키지: 4-SIP, BU	재고3,008	Standard	600V	10A	1.05V @ 5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+? BU
GSIB6A40-E3/45	Vishay Semiconductor Diodes Division	DIODE 6A 400V GSIB-5S Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 2.8A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GSIB-5S Supplier Device Package: GSIB-5S	패키지: 4-SIP, GSIB-5S	재고7,024	Standard	400V	2.8A	1V @ 3A	10µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GSIB-5S	GSIB-5S
GBU8B-E3/51	Vishay Semiconductor Diodes Division	DIODE GPP 8A 100V GPP INLINE GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고15,000	Standard	100V	3.9A	1V @ 8A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
G3SBA60-M3/51	Vishay Semiconductor Diodes Division	DIODE 1PH 4A 600V Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 2.3A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고3,312	Standard	600V	2.3A	1V @ 2A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
DBL106G C1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A Current - Reverse Leakage @ Vr: 2µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: 4-DIP (0.300", 7.62mm)	재고2,864	Standard	800V	1A	1.1V @ 15A	2µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	DBL
MBS10 RCG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 0.8A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-BESOP (0.173", 4.40mm Width) Supplier Device Package: MBS	패키지: 4-BESOP (0.173", 4.40mm Width)	재고2,032	Standard	1000V	800mA	1V @ 1.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Surface Mount	4-BESOP (0.173", 4.40mm Width)	MBS
GBJ1004-BP	Micro Commercial Co	RECT BRIDGE GPP 10A 400V GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고21,816	Standard	400V	10A	1.05V @ 5A	10µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
DF02S1	Fairchild/ON Semiconductor	BRIDGE RECT 1A 200V 4SDIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 3µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-SDIP	패키지: 4-SMD, Gull Wing	재고4,528	Standard	200V	1A	1.1V @ 1A	3µA @ 200V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	4-SDIP
TS20P01G	Taiwan Semiconductor Corporation	DIODE BRIDGE 50V 20A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: -	Request a Quote	Standard	50 V	20 A	1.1 V @ 20 A	10 µA @ 50 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
SBS36H	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 60V 3A ABS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 60 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	패키지: -	Request a Quote	Standard	60 V	3 A	500 mV @ 3 A	500 µA @ 60 V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	ABS
GBPC5012-BP	Micro Commercial Co	Interface Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Operating Temperature: -55°C ~ 150°C Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	패키지: -	Request a Quote	Standard	1.2 kV	50 A	1.1 V @ 25 A	5 µA @ 1200 V	-55°C ~ 150°C	QC Terminal	4-Square, GBPC	GBPC
801-2	Microchip Technology	SINGLE PHASE BRIDGE Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ME Supplier Device Package: ME	패키지: -	Request a Quote	Standard	100 V	25 A	950 mV @ 6 A	10 µA @ 100 V	-65°C ~ 150°C (TJ)	Chassis Mount	ME	ME
ABS10H	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 800MA ABS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 800 mA Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	패키지: -	재고15,000	Standard	1 kV	800 mA	950 mV @ 400 mA	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	ABS
KBJ1010GS-BP	Micro Commercial Co	BRIDGE RECTIFIERS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBJ Supplier Device Package: KBJ	패키지: -	Request a Quote	Standard	1 kV	10 A	1 V @ 5 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBJ	KBJ
DI1510_T0_00001	Panjit International Inc.	DIP, GENERAL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	패키지: -	재고615	Standard	1 kV	1.5 A	1.1 V @ 1 A	5 µA @ 1000 V	-55°C ~ 125°C (TJ)	Through Hole	4-EDIP (0.300", 7.62mm)	4-DIP
KBU405G-T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 4A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	패키지: -	Request a Quote	Standard	600 V	4 A	1.1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
KBP4M_T0_00101	Panjit International Inc.	KBP, GENERAL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-ESIP, KBP Supplier Device Package: KBP	패키지: -	재고1,845	Standard	1 kV	4 A	1.1 V @ 4 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-ESIP, KBP	KBP
GSIB2580-5401E3-45	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1P 800V 3.5A GSIB-5S Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GSIB-5S Supplier Device Package: GSIB-5S	패키지: -	Request a Quote	Standard	800 V	3.5 A	1 V @ 12.5 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GSIB-5S	GSIB-5S

KBP202G-BP

Micro Commercial Co

IC BRIDGE RECT 2A 200V GBP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBP
Supplier Device Package: GBP

패키지: 4-SIP, GBP

재고3,776

Standard

200V

2A

1.1V @ 2A

10µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBP

GBP

VS-52MT120KPBF

Vishay Semiconductor Diodes Division

POWER MOD 3PH BRIDGE 55A MTK

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 55A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Supplier Device Package: MT-K

패키지: MT-K Module

재고2,400

Standard

1200V

55A

-

-40°C ~ 150°C (TJ)

Chassis Mount

MT-K Module

MT-K

VUC36-16GO2

IXYS

DIODE BRIDGE FAST 1600V KAMM-MOD

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 34A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 55A
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: KAMM
Supplier Device Package: KAMM

패키지: KAMM

재고3,488

Standard

1600V

34A

1.85V @ 55A

5mA @ 1600V

-40°C ~ 125°C (TJ)

Chassis Mount

KAMM

VBO45-16NO7

IXYS

DIODE BRIDGE 45A 1600V FO-T-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 45A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-T-A
Supplier Device Package: FO-T-A

패키지: FO-T-A

재고3,872

Standard

1600V

45A

1.7V @ 150A

500µA @ 1600V

-40°C ~ 150°C (TJ)

Chassis Mount

FO-T-A

VBO25-12NO2

IXYS

DIODE BRIDGE 31A 1200V STD FO-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 38A
Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, FO-A
Supplier Device Package: FO-A

패키지: 4-Square, FO-A

재고3,568

Standard

1200V

38A

1.36V @ 55A

300µA @ 1200V

-40°C ~ 150°C (TJ)

QC Terminal

4-Square, FO-A

FO-A

TS15PL06GHD2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 7.5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

재고4,896

Standard

800V

15A

930mV @ 7.5A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

GBPC15005W-E4/51

Vishay Semiconductor Diodes Division

DIODE 1PH 15A 50V GBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

재고6,320

Standard

50V

15A

1.1V @ 7.5A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC1208W-E4/51

Vishay Semiconductor Diodes Division

DIODE 1PH 12A 800V GBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

재고2,176

Standard

800V

12A

1.1V @ 6A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

TS25P02GHC2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

재고6,912

Standard

100V

25A

1.1V @ 25A

10µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

GBU1008

Diodes Incorporated

RECT BRIDGE GPP 10A 800V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1V @ 5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고5,440

Standard

800V

10A

1V @ 5A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

BU1006-M3/51

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 10A BU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Supplier Device Package: isoCINK+? BU

패키지: 4-SIP, BU

재고3,008

Standard

600V

10A

1.05V @ 5A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU

isoCINK+? BU

GSIB6A40-E3/45

Vishay Semiconductor Diodes Division

DIODE 6A 400V GSIB-5S

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 2.8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Supplier Device Package: GSIB-5S

패키지: 4-SIP, GSIB-5S

재고7,024

Standard

400V

2.8A

1V @ 3A

10µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GSIB-5S

GSIB-5S

GBU8B-E3/51

Vishay Semiconductor Diodes Division

DIODE GPP 8A 100V GPP INLINE GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고15,000

Standard

100V

3.9A

1V @ 8A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

G3SBA60-M3/51

Vishay Semiconductor Diodes Division

DIODE 1PH 4A 600V

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 2.3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고3,312

Standard

600V

2.3A

1V @ 2A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

DBL106G C1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
Current - Reverse Leakage @ Vr: 2µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: DBL

패키지: 4-DIP (0.300", 7.62mm)

재고2,864

Standard

800V

1A

1.1V @ 15A

2µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

DBL

MBS10 RCG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 0.8A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-BESOP (0.173", 4.40mm Width)
Supplier Device Package: MBS

패키지: 4-BESOP (0.173", 4.40mm Width)

재고2,032

Standard

1000V

800mA

1V @ 1.5A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Surface Mount

4-BESOP (0.173", 4.40mm Width)

MBS

GBJ1004-BP

Micro Commercial Co

RECT BRIDGE GPP 10A 400V GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고21,816

Standard

400V

10A

1.05V @ 5A

10µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

DF02S1

Fairchild/ON Semiconductor

BRIDGE RECT 1A 200V 4SDIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 3µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-SDIP

패키지: 4-SMD, Gull Wing

재고4,528

Standard

200V

1A

1.1V @ 1A

3µA @ 200V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

4-SDIP

TS20P01G

Taiwan Semiconductor Corporation

DIODE BRIDGE 50V 20A TS-6P

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: -

Request a Quote

Standard

50 V

20 A

1.1 V @ 20 A

10 µA @ 50 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

SBS36H

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 60V 3A ABS

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: ABS

패키지: -

Request a Quote

Standard

60 V

3 A

500 mV @ 3 A

500 µA @ 60 V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

ABS

GBPC5012-BP

Micro Commercial Co

Interface

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

패키지: -

Request a Quote

Standard

1.2 kV

50 A

1.1 V @ 25 A

5 µA @ 1200 V

-55°C ~ 150°C

QC Terminal

4-Square, GBPC

GBPC

801-2

Microchip Technology

SINGLE PHASE BRIDGE

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ME
Supplier Device Package: ME

패키지: -

Request a Quote

Standard

100 V

25 A

950 mV @ 6 A

10 µA @ 100 V

-65°C ~ 150°C (TJ)

Chassis Mount

ME

ABS10H

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 800MA ABS

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: ABS

패키지: -

재고15,000

Standard

1 kV

800 mA

950 mV @ 400 mA

10 µA @ 1000 V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

ABS

KBJ1010GS-BP

Micro Commercial Co

BRIDGE RECTIFIERS

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Supplier Device Package: KBJ

패키지: -

Request a Quote

Standard

1 kV

10 A

1 V @ 5 A

5 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBJ

KBJ

DI1510_T0_00001

Panjit International Inc.

DIP, GENERAL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP

패키지: -

재고615

Standard

1 kV

1.5 A

1.1 V @ 1 A

5 µA @ 1000 V

-55°C ~ 125°C (TJ)

Through Hole

4-EDIP (0.300", 7.62mm)

4-DIP

KBU405G-T0G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 4A KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

패키지: -

Request a Quote

Standard

600 V

4 A

1.1 V @ 4 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

KBP4M_T0_00101

Panjit International Inc.

KBP, GENERAL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP, KBP
Supplier Device Package: KBP

패키지: -

재고1,845

Standard

1 kV

4 A

1.1 V @ 4 A

5 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-ESIP, KBP

KBP

GSIB2580-5401E3-45

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Supplier Device Package: GSIB-5S

패키지: -

Request a Quote

Standard

800 V

3.5 A

1 V @ 12.5 A

10 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GSIB-5S

GSIB-5S