페이지 220 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
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설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
3KBP06M-E4/72
Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 600V 3A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고3,552
Standard
600V
3A
1.05V @ 3A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
VUI72-16NOXT
IXYS

DIODE BRIDGE 1600V 75A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 40µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1A-PAK
  • Supplier Device Package: V1A-PAK
패키지: V1A-PAK
재고3,408
Standard
1600V
75A
1.1V @ 25A
40µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
V1A-PAK
V1A-PAK
VUO52-22NO1
IXYS

DIODE BRIDGE 2200V 60A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 2200V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.13V @ 20A
  • Current - Reverse Leakage @ Vr: 40µA @ 2200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1A-PAK
  • Supplier Device Package: V1A-PAK
패키지: V1A-PAK
재고3,296
Standard
2200V
60A
1.13V @ 20A
40µA @ 2200V
-40°C ~ 150°C (TJ)
Chassis Mount
V1A-PAK
V1A-PAK
APTDF60H601G
Microsemi Corporation

DIODE MODULE FULL BRDG 600V SP1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 92A
  • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 60A
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고4,496
Standard
600V
92A
2.3V @ 60A
25µA @ 600V
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
GBPC3501W T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 35A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고7,888
Standard
100V
35A
1.1V @ 17.5A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
KBPC3504-G
Comchip Technology

RECTIFIER BRIDGE 35A 400V KBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, KBPC
  • Supplier Device Package: KBPC
패키지: 4-Square, KBPC
재고7,568
Standard
400V
35A
1.1V @ 17.5A
10µA @ 400V
-55°C ~ 150°C (TJ)
Chassis Mount
4-Square, KBPC
KBPC
TS20P06GHD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 20A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고7,184
Standard
800V
20A
1.1V @ 20A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBJ3502TB
SMC Diode Solutions

BRIDGE RECT 1PHASE 200V 35A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 35A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBJ
패키지: 4-ESIP
재고7,952
Standard
200V
35A
1.1V @ 35A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBJ
DBL153G C1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
패키지: 4-DIP (0.300", 7.62mm)
재고6,224
Standard
200V
1.5A
1.1V @ 1.5A
2µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
DBL103GHC1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
패키지: 4-DIP (0.300", 7.62mm)
재고5,968
Standard
200V
1A
1.1V @ 1A
2µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
UG3KB40GTB
SMC Diode Solutions

BRIDGE RECT 1PHASE 400V 3A D3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: D3K
패키지: 4-ESIP
재고2,272
Standard
400V
3A
1.1V @ 3A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
D3K
GHXS020A060S-D1E
Global Power Technologies Group

MOD SBD BRIDGE 600V 20A SOT227

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
패키지: SOT-227-4, miniBLOC
재고5,536
Silicon Carbide Schottky
600V
20A
1.7V @ 20A
200µA @ 600V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
GBPC1506
Fairchild/ON Semiconductor

RECT BRIDGE GPP 15A 600V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고7,344
Standard
600V
15A
1.1V @ 7.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
hot DF04SA-E3/77
Vishay Semiconductor Diodes Division

DIODE GPP 1A 400V 4SMD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DFS
패키지: 4-SMD, Gull Wing
재고3,856
Standard
400V
1A
1.1V @ 1A
5µA @ 400V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DFS
VS-36MB120A
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1200V 35A D-34A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 10µA @ 1200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, D-34
  • Supplier Device Package: D-34
패키지: 4-Square, D-34
재고9,156
Standard
1200V
35A
-
10µA @ 1200V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, D-34
D-34
hot GBU810
Diodes Incorporated

RECT BRIDGE GPP 1000V 8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고11,232
Standard
1000V
8A
1V @ 4A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU8JL-5302E3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3.9A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3.9 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
600 V
3.9 A
1 V @ 8 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBJ410G-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJ
  • Supplier Device Package: KBJ
패키지: -
Request a Quote
Standard
1 kV
4 A
1 V @ 2 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJ
KBJ
NTE53508
NTE Electronics, Inc

3-PHASE BRIDGE 800V 35A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 40 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square
  • Supplier Device Package: -
패키지: -
Request a Quote
Standard
800 V
35 A
1.19 V @ 40 A
10 µA @ 800 V
-40°C ~ 150°C (TJ)
QC Terminal
4-Square
-
NTE53008
NTE Electronics, Inc

R-BRIDGE 600V 15A SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: 4-SIP
패키지: -
Request a Quote
Standard
600 V
15 A
1.05 V @ 7.5 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
4-SIP
GBL606
HY Electronic (Cayman) Limited

GLASS PASSIVATED BRIDGE RECTIFIE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: 2GBJ
패키지: -
Request a Quote
Standard
600 V
6 A
1 V @ 3 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
2GBJ
RS801-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RS-6
  • Supplier Device Package: RS-6
패키지: -
Request a Quote
Standard
50 V
8 A
1.1 V @ 8 A
10 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, RS-6
RS-6
MDMA660U1600PTEH
IXYS

BIPOLARMODULE-BRIDGE RECTIFIER E

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 660 A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A
  • Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E3
  • Supplier Device Package: E3
패키지: -
Request a Quote
Standard
1.6 kV
660 A
1.95 V @ 660 A
200 µA @ 1600 V
-40°C ~ 150°C (TJ)
Chassis Mount
E3
E3
GBJA8005-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JA
  • Supplier Device Package: JA
패키지: -
Request a Quote
Standard
50 V
8 A
1.1 V @ 4 A
10 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, JA
JA
TS15PL05GH
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 15A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: -
Request a Quote
Standard
600 V
15 A
900 mV @ 7.5 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
MSB22ML
Diodes Incorporated

LOW POWER BRIDGE MSB T&R 2.5K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2.2 A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Lead
  • Supplier Device Package: MSBL
패키지: -
Request a Quote
Standard
1 kV
2.2 A
920 mV @ 1.1 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Lead
MSBL
GBJ2510-05-G
Comchip Technology

BRIDGE RECT 1PHASE 1KV 25A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: -
Request a Quote
Standard
1 kV
25 A
1 V @ 12.5 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
DB104SP-HF
Comchip Technology

BRIDGE RECT 1PHASE 400V 1A DBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBS
패키지: -
Request a Quote
Standard
400 V
1 A
1.1 V @ 1 A
10 µA @ 400 V
-55°C ~ 150°C
Surface Mount
4-SMD, Gull Wing
DBS