페이지 224 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
GBPC1506W	Diodes Incorporated	RECT BRIDGE GPP 600V 15A GBPCW Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: 4-Square, GBPC-W	재고15,600	Standard	600V	15A	1.1V @ 7.5A	5µA @ 600V	-65°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
MB4S-E3/45	Vishay Semiconductor Diodes Division	RECT BRIDGE .5A 400V TO-269AA Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-269AA, 4-BESOP Supplier Device Package: TO-269AA (MBS)	패키지: TO-269AA, 4-BESOP	재고360,000	Standard	400V	500mA	1V @ 400mA	5µA @ 400V	-55°C ~ 150°C (TJ)	Surface Mount	TO-269AA, 4-BESOP	TO-269AA (MBS)
112MT160KB	Vishay Semiconductor Diodes Division	RECT BRIDGE 1600V 110A MTK Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: 20mA @ 1600V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: MTK Supplier Device Package: MTK	패키지: MTK	재고4,976	Standard	1600V	110A	-	20mA @ 1600V	-40°C ~ 125°C (TJ)	Chassis Mount	MTK	MTK
LVB2560-M3/45	Vishay Semiconductor Diodes Division	RECT BRIDGE 600V 25A GSIB-5S Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 920mV @ 12.5A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GSIB-5S Supplier Device Package: GSIB-5S	패키지: 4-SIP, GSIB-5S	재고3,216	Standard	600V	25A	920mV @ 12.5A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GSIB-5S	GSIB-5S
GBPC2508W T0G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 25A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: 4-Square, GBPC-W	재고6,064	Standard	800V	25A	1.1V @ 12.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3501TA	SMC Diode Solutions	BRIDGE RECT 1PHASE 100V 35A GBPC Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	패키지: 4-Square, GBPC	재고5,456	Standard	100V	35A	1.1V @ 17.5A	5µA @ 100V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
TS20P05G D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 20A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고7,264	Standard	600V	20A	1.1V @ 20A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
BU15065S-M3/45	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 15A 600V BU-5S Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Supplier Device Package: isoCINK+? BU-5S	패키지: 4-SIP, BU-5S	재고5,024	Standard	600V	15A	1.05V @ 6A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU-5S	isoCINK+? BU-5S
GSIB6A80-E3/45	Vishay Semiconductor Diodes Division	DIODE 6A 800V GSIB-5S Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 2.8A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Reverse Leakage @ Vr: 10µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GSIB-5S Supplier Device Package: GSIB-5S	패키지: 4-SIP, GSIB-5S	재고5,488	Standard	800V	2.8A	1V @ 3A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GSIB-5S	GSIB-5S
GBU801 D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 8A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고5,104	Standard	50V	8A	1.1V @ 8A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
3N255-M4/51	Vishay Semiconductor Diodes Division	RECT BRIDGE 1PHASE 200V 2A KBPM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 165°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM	패키지: 4-SIP, KBPM	재고4,288	Standard	200V	2A	1.1V @ 3.14A	5µA @ 200V	-55°C ~ 165°C (TJ)	Through Hole	4-SIP, KBPM	KBPM
CD-DF406S	Bourns Inc.	BRIDGE RECT 1PHASE 600V 4A SMD Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 0.95V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Chip, Concave Terminals Supplier Device Package: -	패키지: Chip, Concave Terminals	재고3,680	Standard	600V	4A	0.95V @ 2A	5µA @ 600V	-55°C ~ 175°C (TJ)	Surface Mount	Chip, Concave Terminals	-
DBLS101GHRDG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 2µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	패키지: 4-SMD, Gull Wing	재고2,816	Standard	50V	1A	1.1V @ 1A	2µA @ 50V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	DBLS
KBL04-E4/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 4A 400V KBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBL Supplier Device Package: KBL	패키지: 4-SIP, KBL	재고26,016	Standard	400V	4A	1.1V @ 4A	5µA @ 400V	-50°C ~ 150°C (TJ)	Through Hole	4-SIP, KBL	KBL
B05S-G	Comchip Technology	RECT BRIDGE GPP 50V 0.8A MBS Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-269AA, 4-BESOP Supplier Device Package: MBS	패키지: TO-269AA, 4-BESOP	재고27,330	Standard	50V	800mA	1.1V @ 800mA	5µA @ 50V	-55°C ~ 150°C (TJ)	Surface Mount	TO-269AA, 4-BESOP	MBS
GBU6G-T	Diotec Semiconductor	IC Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 4.2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	400 V	4.2 A	1 V @ 6 A	5 µA @ 400 V	-50°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
NTE5326	NTE Electronics, Inc	R-SI BRIDGE 600V 25A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square Supplier Device Package: -	패키지: -	Request a Quote	Standard	600 V	25 A	1.1 V @ 12.5 A	10 µA @ 600 V	-55°C ~ 125°C (TJ)	QC Terminal	4-Square	-
MDMA210UB1600PTED	IXYS	BIPOLARMODULE-RECTIFIER+BRAKE E2 Diode Type: Three Phase (Braking) Technology: Standard Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 210 A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 210 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	패키지: -	Request a Quote	Standard	1.6 kV	210 A	1.75 V @ 210 A	100 µA @ 1600 V	-40°C ~ 150°C (TJ)	Chassis Mount	E2	E2
VS-KBPC101	Vishay General Semiconductor - Diodes Division	BRIDGE RECTIFIER 100V 3.0A D-46 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, KBPC-1 Supplier Device Package: KBPC1	패키지: -	재고543	Standard	100 V	3 A	1.1 V @ 1.5 A	10 µA @ 100 V	-40°C ~ 150°C (TJ)	Through Hole	4-Square, KBPC-1	KBPC1
GBU4JL-7088E3-51	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1PHASE 600V 3A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBLA01	Taiwan Semiconductor Corporation	DIODE BRIDGE 4A 100V GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: -	Request a Quote	Standard	100 V	3 A	1 V @ 4 A	5 µA @ 100 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
GBU4JL-5300E3-51	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1PHASE 600V 3A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU2506-BP-HF	Micro Commercial Co	Interface Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	600 V	25 A	1 V @ 12.5 A	10 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
ABS6H	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 800MA ABS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 800 mA Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	패키지: -	재고15,000	Standard	600 V	800 mA	950 mV @ 400 mA	10 µA @ 600 V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	ABS
B80S15A	Diotec Semiconductor	BRIDGE 1PH SO-DIL 160V 1.5A 150C Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 160 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 160 V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-269AA, 4-BESOP Supplier Device Package: 4-SOIC	패키지: -	Request a Quote	Standard	160 V	1.5 A	1.1 V @ 1 A	5 µA @ 160 V	-50°C ~ 150°C (TJ)	Surface Mount	TO-269AA, 4-BESOP	4-SOIC
GBJ2508-03-G	Comchip Technology	BRIDGE RECT 1PHASE 800V 25A GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: -	Request a Quote	Standard	800 V	25 A	1 V @ 12.5 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBJ35S06	Diodes Incorporated	MEDIUM/HIGH POWER BRIDGE GBJ TUB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: -	Request a Quote	Standard	600 V	35 A	930 mV @ 17.5 A	10 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBU1007	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 10A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	재고5,997	Standard	1 kV	10 A	1.1 V @ 1.5 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU

GBPC1506W

Diodes Incorporated

RECT BRIDGE GPP 600V 15A GBPCW

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

재고15,600

Standard

600V

15A

1.1V @ 7.5A

5µA @ 600V

-65°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

MB4S-E3/45

Vishay Semiconductor Diodes Division

RECT BRIDGE .5A 400V TO-269AA

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-269AA, 4-BESOP
Supplier Device Package: TO-269AA (MBS)

패키지: TO-269AA, 4-BESOP

재고360,000

Standard

400V

500mA

1V @ 400mA

5µA @ 400V

-55°C ~ 150°C (TJ)

Surface Mount

TO-269AA, 4-BESOP

TO-269AA (MBS)

112MT160KB

Vishay Semiconductor Diodes Division

RECT BRIDGE 1600V 110A MTK

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 110A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: 20mA @ 1600V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: MTK
Supplier Device Package: MTK

패키지: MTK

재고4,976

Standard

1600V

110A

-

20mA @ 1600V

-40°C ~ 125°C (TJ)

Chassis Mount

MTK

LVB2560-M3/45

Vishay Semiconductor Diodes Division

RECT BRIDGE 600V 25A GSIB-5S

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 12.5A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Supplier Device Package: GSIB-5S

패키지: 4-SIP, GSIB-5S

재고3,216

Standard

600V

25A

920mV @ 12.5A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GSIB-5S

GSIB-5S

GBPC2508W T0G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

재고6,064

Standard

800V

25A

1.1V @ 12.5A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC3501TA

SMC Diode Solutions

BRIDGE RECT 1PHASE 100V 35A GBPC

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

패키지: 4-Square, GBPC

재고5,456

Standard

100V

35A

1.1V @ 17.5A

5µA @ 100V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC

GBPC

TS20P05G D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 20A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

재고7,264

Standard

600V

20A

1.1V @ 20A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

BU15065S-M3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 15A 600V BU-5S

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Supplier Device Package: isoCINK+? BU-5S

패키지: 4-SIP, BU-5S

재고5,024

Standard

600V

15A

1.05V @ 6A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU-5S

isoCINK+? BU-5S

GSIB6A80-E3/45

Vishay Semiconductor Diodes Division

DIODE 6A 800V GSIB-5S

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 2.8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Supplier Device Package: GSIB-5S

패키지: 4-SIP, GSIB-5S

재고5,488

Standard

800V

2.8A

1V @ 3A

10µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GSIB-5S

GSIB-5S

GBU801 D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고5,104

Standard

50V

8A

1.1V @ 8A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

3N255-M4/51

Vishay Semiconductor Diodes Division

RECT BRIDGE 1PHASE 200V 2A KBPM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 165°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

재고4,288

Standard

200V

2A

1.1V @ 3.14A

5µA @ 200V

-55°C ~ 165°C (TJ)

Through Hole

4-SIP, KBPM

KBPM

CD-DF406S

Bourns Inc.

BRIDGE RECT 1PHASE 600V 4A SMD

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 0.95V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Chip, Concave Terminals
Supplier Device Package: -

패키지: Chip, Concave Terminals

재고3,680

Standard

600V

4A

0.95V @ 2A

5µA @ 600V

-55°C ~ 175°C (TJ)

Surface Mount

Chip, Concave Terminals

-

DBLS101GHRDG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 2µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: DBLS

패키지: 4-SMD, Gull Wing

재고2,816

Standard

50V

1A

1.1V @ 1A

2µA @ 50V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

DBLS

KBL04-E4/51

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 4A 400V KBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Supplier Device Package: KBL

패키지: 4-SIP, KBL

재고26,016

Standard

400V

4A

1.1V @ 4A

5µA @ 400V

-50°C ~ 150°C (TJ)

Through Hole

4-SIP, KBL

KBL

B05S-G

Comchip Technology

RECT BRIDGE GPP 50V 0.8A MBS

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-269AA, 4-BESOP
Supplier Device Package: MBS

패키지: TO-269AA, 4-BESOP

재고27,330

Standard

50V

800mA

1.1V @ 800mA

5µA @ 50V

-55°C ~ 150°C (TJ)

Surface Mount

TO-269AA, 4-BESOP

MBS

GBU6G-T

Diotec Semiconductor

IC

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4.2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

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Standard

400 V

4.2 A

1 V @ 6 A

5 µA @ 400 V

-50°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

NTE5326

NTE Electronics, Inc

R-SI BRIDGE 600V 25A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square
Supplier Device Package: -

패키지: -

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Standard

600 V

25 A

1.1 V @ 12.5 A

10 µA @ 600 V

-55°C ~ 125°C (TJ)

QC Terminal

4-Square

-

MDMA210UB1600PTED

IXYS

BIPOLARMODULE-RECTIFIER+BRAKE E2

Diode Type: Three Phase (Braking)
Technology: Standard
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 210 A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 210 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

패키지: -

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Standard

1.6 kV

210 A

1.75 V @ 210 A

100 µA @ 1600 V

-40°C ~ 150°C (TJ)

Chassis Mount

E2

VS-KBPC101

Vishay General Semiconductor - Diodes Division

BRIDGE RECTIFIER 100V 3.0A D-46

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-1
Supplier Device Package: KBPC1

패키지: -

재고543

Standard

100 V

3 A

1.1 V @ 1.5 A

10 µA @ 100 V

-40°C ~ 150°C (TJ)

Through Hole

4-Square, KBPC-1

KBPC1

GBU4JL-7088E3-51

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

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Standard

600 V

3 A

1 V @ 4 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBLA01

Taiwan Semiconductor Corporation

DIODE BRIDGE 4A 100V GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: -

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Standard

100 V

3 A

1 V @ 4 A

5 µA @ 100 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

GBU4JL-5300E3-51

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

Request a Quote

Standard

600 V

3 A

1 V @ 4 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU2506-BP-HF

Micro Commercial Co

Interface

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

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Standard

600 V

25 A

1 V @ 12.5 A

10 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

ABS6H

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 800MA ABS

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: ABS

패키지: -

재고15,000

Standard

600 V

800 mA

950 mV @ 400 mA

10 µA @ 600 V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

ABS

B80S15A

Diotec Semiconductor

BRIDGE 1PH SO-DIL 160V 1.5A 150C

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 160 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 160 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-269AA, 4-BESOP
Supplier Device Package: 4-SOIC

패키지: -

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Standard

160 V

1.5 A

1.1 V @ 1 A

5 µA @ 160 V

-50°C ~ 150°C (TJ)

Surface Mount

TO-269AA, 4-BESOP

4-SOIC

GBJ2508-03-G

Comchip Technology

BRIDGE RECT 1PHASE 800V 25A GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: -

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Standard

800 V

25 A

1 V @ 12.5 A

10 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

GBJ35S06

Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE GBJ TUB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: -

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Standard

600 V

35 A

930 mV @ 17.5 A

10 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

GBU1007

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 10A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

재고5,997

Standard

1 kV

10 A

1.1 V @ 1.5 A

5 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU