페이지 39 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
페이지  39/271
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설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CBR6F-080
Central Semiconductor Corp

RECT BRIDGE

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,304
-
-
-
-
-
-
-
-
-
KBPM304G
GeneSiC Semiconductor

DIODE BRIDGE 400V 3A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고6,848
Standard
400V
3A
1.1V @ 3A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
hot KBP02M
Fairchild/ON Semiconductor

IC BRIDGE RECT 1.5A 200V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고7,512
Standard
200V
1.5A
1V @ 1A
5µA @ 200V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
2KBP005M/1
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 2A 50V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고3,664
Standard
50V
2A
1.1V @ 3.14A
5µA @ 50V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
3SBMC6
Semtech Corporation

BRIDGE RECT 3A 600V PCB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 2µA @ 600V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: -
패키지: 4-SIP
재고4,384
Standard
600V
3A
1V @ 3A
2µA @ 600V
-
Through Hole
4-SIP
-
VS-92MT160KPBF
Vishay Semiconductor Diodes Division

POWER MOD 3PH BRIDGE 55A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MT-K Module
  • Supplier Device Package: MT-K
패키지: MT-K Module
재고6,960
Standard
1600V
90A
-
-
-40°C ~ 150°C (TJ)
Chassis Mount
MT-K Module
MT-K
VUO16012NO7
IXYS

BRIDGE RECT 3 PHASE 1200V 175A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 175A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-E1
  • Supplier Device Package: PWS-E1
패키지: PWS-E1
재고3,232
Standard
1200V
175A
1.1V @ 60A
200µA @ 1200V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-E1
PWS-E1
APTDF100H100G
Microsemi Corporation

DIODE MODULE FULL BRIDGE SP4

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 130A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
패키지: SP4
재고2,704
Standard
1000V
130A
2.7V @ 100A
100µA @ 1000V
-40°C ~ 175°C (TJ)
Chassis Mount
SP4
SP4
VBO25-16NO2
IXYS

DIODE BRIDGE 31A 1600V AVAL FO-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 38A
  • Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, FO-A
  • Supplier Device Package: FO-A
패키지: 4-Square, FO-A
재고6,576
Standard
1600V
38A
1.36V @ 55A
300µA @ 1600V
-40°C ~ 150°C (TJ)
QC Terminal
4-Square, FO-A
FO-A
BR501L-G
Comchip Technology

RECTIFIER BRIDGE 100V 50A BR-L

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, with Heat Sink
  • Supplier Device Package: BR-L
패키지: 4-SIP, with Heat Sink
재고3,296
Standard
100V
50A
1.1V @ 25A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, with Heat Sink
BR-L
TS6K40 D3G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: TS4K
패키지: 4-SIP, GBL
재고2,768
Standard
400V
6A
1.1V @ 6A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
TS4K
DF02MA-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1A 200V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
패키지: 4-EDIP (0.300", 7.62mm)
재고6,924
Standard
200V
1A
1.1V @ 1A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
GBJ2008TB
SMC Diode Solutions

BRIDGE RECT 1PHASE 800V 20A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBJ
패키지: 4-ESIP
재고3,504
Standard
800V
20A
1.1V @ 20A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBJ
GBL206HD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고3,680
Standard
800V
2A
1V @ 2A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
CDBHM250L-HF
Comchip Technology

DIODE SCHOTTKY 50V 2A MBS-2

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Current - Reverse Leakage @ Vr: 1mA @ 50V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-269AA, 4-BESOP
  • Supplier Device Package: MBS-2
패키지: TO-269AA, 4-BESOP
재고6,944
Schottky
50V
2A
700mV @ 2A
1mA @ 50V
-55°C ~ 125°C (TJ)
Surface Mount
TO-269AA, 4-BESOP
MBS-2
hot W01M
GeneSiC Semiconductor

DIODE BRIDGE 100V 1.5A WOM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOM
  • Supplier Device Package: WOM
패키지: 4-Circular, WOM
재고145,692
Standard
100V
1.5A
1V @ 1A
10µA @ 100V
-65°C ~ 125°C (TJ)
Through Hole
4-Circular, WOM
WOM
ABS10A-13
Diodes Incorporated

BRIDGE RECT 1PH 1KV 1A 4SOPA

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SOPA
패키지: 4-SMD, Gull Wing
재고3,328
Standard
1000V
1A
1.1V @ 1A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SOPA
CBRLDSH2-60-TR13-PBFREE
Central Semiconductor Corp

BRIDGE RECT 1PHASE 60V 2A 4LPDIP

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 60 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-LPDIP
패키지: -
재고6,285
Schottky
60 V
2 A
700 mV @ 2 A
500 µA @ 60 V
-55°C ~ 125°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-LPDIP
GBU2008LV_T0_00601
Panjit International Inc.

GBU PACKAGE, 10A/800V LOW VF BRI

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU-2
패키지: -
재고5,775
Standard
800 V
20 A
920 mV @ 10 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU-2
802-4
Microchip Technology

SINGLE PHASE BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 150 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
  • Current - Reverse Leakage @ Vr: 20 µA @ 150 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, MA
  • Supplier Device Package: MA
패키지: -
Request a Quote
Standard
150 V
35 A
950 mV @ 10 A
20 µA @ 150 V
-65°C ~ 150°C (TJ)
Chassis Mount
4-Square, MA
MA
DF100NB160
SanRex Corporation

DIODE MODULE 1600V 100A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 100 A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 100 A
  • Current - Reverse Leakage @ Vr: 8 mA @ 1600 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 5-PowerDIP Module
  • Supplier Device Package: 5-DIP
패키지: -
Request a Quote
Standard
1.6 kV
100 A
1.35 V @ 100 A
8 mA @ 1600 V
-40°C ~ 150°C (TJ)
Through Hole
5-PowerDIP Module
5-DIP
DDB6U144N16RBPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2A-8111

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 100 A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
  • Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2A
패키지: -
Request a Quote
Standard
1.6 kV
100 A
1.65 V @ 150 A
5 mA @ 1600 V
150°C (TJ)
Chassis Mount
Module
AG-ECONO2A
RBV2502
EIC SEMICONDUCTOR INC.

BRIGDE RECTIFIER 25A 200V, CASE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RBV-25
  • Supplier Device Package: RBV-25
패키지: -
Request a Quote
Standard
200 V
25 A
1.1 V @ 12.5 A
10 µA @ 200 V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, RBV-25
RBV-25
GBJ2506-04-G
Comchip Technology

BRIDGE RECT 1PHASE 600V 25A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: -
Request a Quote
Standard
600 V
25 A
1 V @ 12.5 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
MSB40K-13
Diodes Incorporated

LOW POWER BRIDGE MSBL T&R 2.5K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Lead
  • Supplier Device Package: MSBL
패키지: -
Request a Quote
Standard
800 V
4 A
1.1 V @ 4 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Lead
MSBL
GBL408-BPC01
Micro Commercial Co

DIODE GPP SGL PHASE 4A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
Request a Quote
Standard
800 V
4 A
1 V @ 2 A
5 µA @ 800 V
-55°C ~ 150°C
Through Hole
4-SIP, GBL
GBL
RBV2502D
EIC SEMICONDUCTOR INC.

BRIGDE RECTIFIER 25A 200V, CASE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RBV-25
  • Supplier Device Package: RBV-25
패키지: -
Request a Quote
Standard
200 V
25 A
1.1 V @ 25 A
10 µA @ 200 V
-40°C ~ 150°C (TJ)
Through Hole
4-SIP, RBV-25
RBV-25
RTBL406-TP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: TBL
패키지: -
Request a Quote
Standard
600 V
4 A
1.3 V @ 2 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
TBL