페이지 60 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
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설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2KBP08ML-7001E4/72
Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 800V 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고2,944
Standard
800V
2A
1.1V @ 3.14A
5µA @ 800V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
CBR10A-J010
Central Semiconductor Corp

RECT BRIDGE

  • Diode Type: Single Phase
  • Technology: Avalanche
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: CM
패키지: -
재고7,520
Avalanche
100V
10A
1.2V @ 5A
10µA @ 100V
-
-
-
CM
MSDM200-18
Microsemi Corporation

MOD BRIDGE 3PH 1800V 200A M3-1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 200A
  • Current - Reverse Leakage @ Vr: 500µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M3-1
  • Supplier Device Package: M3-1
패키지: M3-1
재고5,376
Standard
1800V
200A
1.45V @ 200A
500µA @ 1800V
-40°C ~ 150°C (TJ)
Chassis Mount
M3-1
M3-1
VSIB480-E3/45
Vishay Semiconductor Diodes Division

DIODE 4A 800V SGL BRIDGE 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
패키지: 4-SIP, GSIB-5S
재고5,264
Standard
800V
2.3A
950mV @ 2A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GBPC3502W
Diodes Incorporated

RECT BRIDGE GPP 200V 35A GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고4,096
Standard
200V
35A
1.1V @ 17.5A
5µA @ 200V
-65°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
MB805
Micro Commercial Co

RECTIFIER BRIDGE 8A 50V BR-6

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-6
  • Supplier Device Package: BR-6
패키지: 4-Square, BR-6
재고3,616
Standard
50V
8A
1.1V @ 4A
10µA @ 50V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, BR-6
BR-6
SC3BH2F
Semtech Corporation

BRIDGE RECT 3A 200V

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 3µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Rectangle
  • Supplier Device Package: -
패키지: 4-Rectangle
재고5,632
Standard
200V
3A
1.1V @ 3A
3µA @ 200V
-55°C ~ 150°C (TJ)
Chassis Mount
4-Rectangle
-
SC3BJ05F
Semtech Corporation

BRIDGE RECT 1.5A 50V

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Current - Reverse Leakage @ Vr: 3µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 5-Rectangle
  • Supplier Device Package: -
패키지: 5-Rectangle
재고2,800
Standard
50V
1.5A
1.2V @ 1A
3µA @ 50V
-55°C ~ 150°C (TJ)
Chassis Mount
5-Rectangle
-
VBO19-12NO7
IXYS

DIODE BRIDGE 21A 1200V SLIM-PAC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 21A
  • Voltage - Forward (Vf) (Max) @ If: 1.12V @ 7A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Slim-PAC
  • Supplier Device Package: Slim-PAC
패키지: Slim-PAC
재고5,856
Standard
1200V
21A
1.12V @ 7A
300µA @ 1200V
-40°C ~ 150°C (TJ)
Chassis Mount
Slim-PAC
Slim-PAC
GSIB2560N-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 25A 600V GSIB-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
패키지: 4-SIP, GSIB-5S
재고7,440
Standard
600V
25A
1V @ 12.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
TS20P02GHC2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 20A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고6,656
Standard
100V
20A
1.1V @ 20A
10µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBJ2506-G
Comchip Technology

RECTIFIER BRIDGE 25A 600V GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: 4-SIP, GBJ
재고5,072
Standard
600V
25A
1V @ 12.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
TS10P01GHC2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 10A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고5,408
Standard
50V
10A
1.1V @ 10A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBU15J
GeneSiC Semiconductor

DIODE BRIDGE 600V 15A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고7,952
Standard
600V
15A
1.1V @ 15A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
CBR1-L100M
Central Semiconductor Corp

BRIDGE RECT 1P 1000V 1.5A B-M

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: B-M
패키지: 4-SIP
재고2,368
Standard
1000V
1.5A
1V @ 1A
10µA @ 1000V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP
B-M
GBU15005TB
SMC Diode Solutions

BRIDGE RECT 1PHASE 50V 15A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBU
패키지: 4-ESIP
재고7,520
Standard
50V
15A
1.1V @ 15A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU
3N247-M4/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 1.5A 100V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고2,160
Standard
100V
1.5A
1V @ 1A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
hot KBU8J-E4/51
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 8A 600V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
패키지: 4-SIP, KBU
재고8,328
Standard
600V
8A
1V @ 8A
10µA @ 600V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
GBJ606-F
Diodes Incorporated

RECT BRIDGE GPP 600V 6A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: 4-SIP, GBJ
재고7,904
Standard
600V
6A
1V @ 3A
5µA @ 600V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
DB156S
SMC Diode Solutions

BRIDGE RECT 1P 800V 1.5A DB-S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DB-S
패키지: -
Request a Quote
Standard
800 V
1.5 A
1.1 V @ 1.5 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DB-S
DBLS156G
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 800V 1.5A DBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
패키지: -
재고9,000
Standard
800 V
1.5 A
1.1 V @ 1.5 A
2 µA @ 800 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
GBPC3510W-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: -
Request a Quote
Standard
1 kV
35 A
1.1 V @ 17.5 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
FTB6F-15F
SMC Diode Solutions

BRIDGE RECT 1PHASE 600V 1.5A ABF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABF
패키지: -
재고39,897
Standard
600 V
1.5 A
1.3 V @ 1.5 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABF
MSCDC50X1701AG
Microchip Technology

PM-DIODE-SIC-SBD-SP1F

  • Diode Type: Three Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 1.7 kV
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
  • Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
재고18
Silicon Carbide Schottky
1.7 kV
50 A
1.8 V @ 50 A
200 µA @ 1700 V
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
GBI10B
Diotec Semiconductor

BRIDGE 1-PH GBI 100V 10A 150C

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBI
  • Supplier Device Package: GBI
패키지: -
Request a Quote
Standard
100 V
3 A
1.1 V @ 5 A
5 µA @ 100 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBI
GBI
GBLA06
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 4A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
Request a Quote
Standard
600 V
4 A
1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
KBJL1504G-BP
Micro Commercial Co

DIODE BRIDGE KBJL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJ
  • Supplier Device Package: KBJ
패키지: -
Request a Quote
Standard
400 V
15 A
1.05 V @ 7.5 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBJ
KBJ
SDB156-TP
Micro Commercial Co

BRIDGE RECT 1P 800V 1.5A SDB-1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: SDB-1
패키지: -
Request a Quote
Standard
800 V
1.5 A
1.1 V @ 1.5 A
10 µA @ 800 V
-55°C ~ 150°C
Surface Mount
4-SMD, Gull Wing
SDB-1