페이지 68 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
페이지  68/271
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부품 번호
제조업체
설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2KBP06ML-5303E4/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 600V 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고7,760
Standard
600V
2A
1.1V @ 3.14A
5µA @ 600V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
KBL01
Fairchild/ON Semiconductor

IC BRIDGE RECT 4A 100V KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고2,640
Standard
100V
4A
1.1V @ 4A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
MB358W-BP
Micro Commercial Co

RECT BRIDGE 35A 800V WIRE LEADS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 17.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, MB-35W
  • Supplier Device Package: MB-35W
패키지: 4-Square, MB-35W
재고4,704
Standard
800V
35A
1.2V @ 17.5A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, MB-35W
MB-35W
MB256W-BP
Micro Commercial Co

RECT BRIDGE 25A 600V WIRE LEADS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, MB-35W
  • Supplier Device Package: MB-35W
패키지: 4-Square, MB-35W
재고4,128
Standard
600V
25A
1.2V @ 12.5A
10µA @ 600V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, MB-35W
MB-35W
SC3BJ6F
Semtech Corporation

BRIDGE RECT 1.5A 600V

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 5-Rectangle
  • Supplier Device Package: -
패키지: 5-Rectangle
재고7,008
Standard
600V
1.5A
1.2V @ 1A
3µA @ 600V
-55°C ~ 150°C (TJ)
Chassis Mount
5-Rectangle
-
VBO130-08NO7
IXYS

BRIDGE RECTIFIER SINGLE PHASE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 122A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 120A
  • Current - Reverse Leakage @ Vr: 200µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: PWS-E
패키지: Module
재고7,472
Standard
800V
122A
1.1V @ 120A
200µA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
PWS-E
GBPC1510 T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고6,560
Standard
1000V
15A
1.1V @ 7.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
GBPC2510T
GeneSiC Semiconductor

DIODE BRIDGE 1000V 25A GBPC-T

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고4,080
Standard
1000V
25A
1.1V @ 12.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC
GBPC
KBPC35010T
GeneSiC Semiconductor

DIODE BRIDGE 1000V 35A KBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, KBPC-T
  • Supplier Device Package: KBPC-T
패키지: 4-Square, KBPC-T
재고6,720
Standard
1000V
35A
1.1V @ 17.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Chassis Mount
4-Square, KBPC-T
KBPC-T
KBPC1506T
GeneSiC Semiconductor

DIODE BRIDGE 600V 15A KBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, KBPC-T
  • Supplier Device Package: KBPC
패키지: 4-Square, KBPC-T
재고6,112
Standard
600V
15A
1.1V @ 7.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Chassis Mount
4-Square, KBPC-T
KBPC
TS10P03G C2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 10A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고7,568
Standard
200V
10A
1.1V @ 10A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
KBU2502-G
Comchip Technology

RECTIFIER BRIDGE 25A 200V KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
패키지: 4-SIP, KBU
재고3,632
Standard
200V
3.6A
1.1V @ 12.5A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
BR64
GeneSiC Semiconductor

DIODE BRIDGE 400V 6A BR-6

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-6
  • Supplier Device Package: BR-6
패키지: 4-Square, BR-6
재고5,328
Standard
400V
6A
1V @ 3A
10µA @ 400V
-65°C ~ 125°C (TJ)
Through Hole
4-Square, BR-6
BR-6
2KBP005M-M4/51
Vishay Semiconductor Diodes Division

DIODE GPP 2A 50V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고3,616
Standard
50V
2A
1.1V @ 3.14A
5µA @ 50V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
VS-KBPC110
Vishay Semiconductor Diodes Division

BRIDGE RECTIFIER 1000V 3.0A D-72

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, D-72
  • Supplier Device Package: D-72
패키지: 4-Square, D-72
재고7,008
Standard
1000V
3A
1.1V @ 1.5A
10µA @ 1000V
-40°C ~ 150°C (TJ)
Through Hole
4-Square, D-72
D-72
hot NMLU1210TWG
ON Semiconductor

IC FULL BRIDGE RECT 8-UDFN

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 20V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
  • Current - Reverse Leakage @ Vr: 40µA @ 20V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (4x4)
패키지: 8-UDFN Exposed Pad
재고679,020
Schottky
20V
3.2A
450mV @ 2A
40µA @ 20V
-55°C ~ 125°C (TJ)
Surface Mount
8-UDFN Exposed Pad
8-UDFN (4x4)
hot GBU802
Diodes Incorporated

RECT BRIDGE GPP 200V 8A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고5,280
Standard
200V
8A
1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBP210-BP
Micro Commercial Co

BRIDGE RECT 2A 1KV KBPR

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPR
  • Supplier Device Package: KBPR
패키지: 4-SIP, KBPR
재고28,254
Standard
1000V
2A
1.1V @ 2A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPR
KBPR
GBU401G
SMC Diode Solutions

BRIDGE RECT 1PHASE 100V 4A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
100 V
4 A
1.1 V @ 4 A
5 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU
DB25-02
Diotec Semiconductor

BRIDGE 3-PH DB 200V 25A 150C

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 5-Square, DB-35
  • Supplier Device Package: DB
패키지: -
Request a Quote
Standard
200 V
25 A
1.05 V @ 12.5 A
10 µA @ 200 V
-50°C ~ 150°C (TJ)
Chassis Mount
5-Square, DB-35
DB
GBL04E-E3-P
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 400V 3A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
Request a Quote
Standard
400 V
3 A
1 V @ 4 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
RC207
Rectron USA

BRIDGE RECT GLASS 1000V 2A RC-2

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
  • Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, RC-2
  • Supplier Device Package: RC-2
패키지: -
Request a Quote
Standard
1 kV
2 A
1.05 V @ 2 A
200 nA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-Circular, RC-2
RC-2
GBPC3508W-BP
Micro Commercial Co

35ABRIDGE RECTIFIERGBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: -
재고1,707
Standard
800 V
35 A
1.1 V @ 17.5 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBU10A-T
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 7 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
50 V
7 A
1.1 V @ 10 A
5 µA @ 50 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
W04MG-G
Comchip Technology

BRIDGE RECT

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOBM
  • Supplier Device Package: WOBM
패키지: -
Request a Quote
Standard
400 V
1.5 A
1.1 V @ 1.5 A
10 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-Circular, WOBM
WOBM
GBU4DL-5303M3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 200V 3A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
200 V
3 A
1 V @ 4 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
CBR1U-D020S-TR13-H
Central Semiconductor Corp

BRIDGE RECT 1P 200V 1A 4SMDIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SMDIP
패키지: -
Request a Quote
Standard
200 V
1 A
1.05 V @ 1 A
5 µA @ 200 V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SMDIP
GBL06L-6832E3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
Request a Quote
Standard
600 V
3 A
1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL