페이지 272 - 다이오드 - 정류기 - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 어레이

기록 16,443
페이지  272/588
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부품 번호
제조업체
설명
패키지
재고
수량
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
MBRF12030
GeneSiC Semiconductor

DIODE SCHOTTKY 30V 60A TO244AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244AB
패키지: TO-244AB
재고5,280
Schottky
30V
60A
700mV @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-55°C ~ 150°C
Chassis Mount
TO-244AB
TO-244AB
hot MBR10150CTP
Diodes Incorporated

DIODE ARRAY SCHOTTKY 150V ITO220

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 910mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 150V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220S
패키지: TO-220-3 Full Pack, Isolated Tab
재고150,708
Schottky
150V
5A
910mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 150V
-65°C ~ 175°C
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220S
MBR25H35CT-E3/45
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 35V TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 640mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 35V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고7,168
Schottky
35V
15A
640mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-65°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
MURTA40060R
GeneSiC Semiconductor

DIODE GEN PURP 600V 200A 3 TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
패키지: Three Tower
재고2,048
Standard
600V
200A
1.7V @ 200A
Standard Recovery >500ns, > 200mA (Io)
-
25µA @ 600V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
FST16030
GeneSiC Semiconductor

DIODE MODULE 30V 160A TO249AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 160A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-249AB
  • Supplier Device Package: TO-249AB
패키지: TO-249AB
재고5,312
Schottky
30V
160A (DC)
750mV @ 160A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-55°C ~ 150°C
Chassis Mount
TO-249AB
TO-249AB
MSCD120-12
Microsemi Corporation

DIODE MODULE 1.2KV 120A D1

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
패키지: D1
재고6,480
Standard
1200V
120A
1.43V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
6mA @ 1200V
-
Chassis Mount
D1
D1
87CNQ020
SMC Diode Solutions

DIODE SCHOTTKY 20V 40A PRM2

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 510mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5.5mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: PRM2
  • Supplier Device Package: PRM2
패키지: PRM2
재고3,984
Schottky
20V
40A
510mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
5.5mA @ 20V
-55°C ~ 150°C
Chassis Mount
PRM2
PRM2
VBT4045C-M3/8W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40A 45V TO-263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 45V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,040
Schottky
45V
20A
580mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 45V
-40°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
VS-12CTQ040PBF
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 40V TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 6A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 40V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,248
Schottky
40V
6A
600mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 40V
-55°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
VBT3080C-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 80V TO-263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 820mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 80V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,176
Schottky
80V
15A
820mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 80V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
VB30M120C-E3/8W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 120V TO-263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 120V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,104
Schottky
120V
15A
980mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 120V
-40°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
SBS822-S-TL-W
ON Semiconductor

DIODE ARRAY SCHOTTKY 20V 5MCPH

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io) (per Diode): 1A
  • Voltage - Forward (Vf) (Max) @ If: 460mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 110µA @ 10V
  • Operating Temperature - Junction: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: 5-MCPH
패키지: 6-SMD (5 Leads), Flat Lead
재고4,048
Schottky
20V
1A
460mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
10ns
110µA @ 10V
-55°C ~ 125°C
Surface Mount
6-SMD (5 Leads), Flat Lead
5-MCPH
hot RB225NS-40TL
Rohm Semiconductor

DIODE ARRAY SCHOTTKY 40V LPDS

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고49,500
Schottky
40V
15A
550mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
150°C (Max)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
LPDS
hot V50100PW-M3/4W
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO3PW

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 25A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PW
패키지: TO-3P-3 Full Pack
재고14,340
Schottky
100V
25A
840mV @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
-40°C ~ 150°C
Through Hole
TO-3P-3 Full Pack
TO-3PW
DPG20C300PN
IXYS

DIODE ARRAY GP 300V 10A TO220FP

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.27V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 1µA @ 300V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220ABFP
패키지: TO-220-3 Full Pack, Isolated Tab
재고6,976
Standard
300V
10A
1.27V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 300V
-55°C ~ 175°C
Through Hole
TO-220-3 Full Pack, Isolated Tab
TO-220ABFP
BAS16HTWQ-13
Diodes Incorporated

DIODE FS 100V 200MA SOT363

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고6,656
Standard
100V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
500nA @ 80V
-65°C ~ 150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
BAS101S,215
Nexperia USA Inc.

DIODE ARRAY GP 300V 200MA SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 150nA @ 250V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고77,082
Standard
300V
200mA (DC)
1.1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
50ns
150nA @ 250V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
UGB15HT-E3-45
Vishay General Semiconductor - Diodes Division

DIODE ARRAY GP 500V TO263AB

  • Diode Configuration: -
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 500 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
패키지: -
Request a Quote
Standard
500 V
-
1.75 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
30 µA @ 500 V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
1S2836-T1B-A
Renesas Electronics Corporation

DIODE

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MBR3035CT
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 35V 30A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35 V
  • Current - Average Rectified (Io) (per Diode): 30A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 35 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: -
Request a Quote
Schottky
35 V
30A (DC)
820 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 35 V
-55°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
BAS70-05Q-13-F
Diodes Incorporated

DIODE ARR SCHOT 70V 70MA SOT23-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io) (per Diode): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 2.5 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Operating Temperature - Junction: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고30,000
Schottky
70 V
70mA (DC)
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
2.5 ns
100 nA @ 50 V
-55°C ~ 125°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
VX60M60PWHM3-P
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 60V 30A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 650 µA @ 60 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: -
Request a Quote
Schottky
60 V
30A
630 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
650 µA @ 60 V
-40°C ~ 175°C
Through Hole
TO-247-3
TO-247AD
V10KM150CHM3-H
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 150V 3.5A FLTPK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io) (per Diode): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 150 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: FlatPAK (5x6)
패키지: -
Request a Quote
Schottky
150 V
3.5A
1.08 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 150 V
-40°C ~ 175°C
Surface Mount
8-PowerTDFN
FlatPAK (5x6)
MUR1610CTR
Motorola

DIODE ARRAY GP 100V 8A TO220AB

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: -
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Standard
100 V
8A
1.2 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
5 µA @ 100 V
-65°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
MBR1040DC_R2_00001
Panjit International Inc.

DIODE ARR SCHOTT 40V 10A TO263

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 40 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263
패키지: -
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Schottky
40 V
10A
700 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 40 V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263
DSSK28-006BS-TRL
IXYS

DIODE ARR SCHOTT 60V 15A TO263AA

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 60 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
패키지: -
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Schottky
60 V
15A
560 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 mA @ 60 V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
V10K150CHM3-I
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 150V 3A FLATPAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io) (per Diode): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 150 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: FlatPAK (5x6)
패키지: -
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Schottky
150 V
3A
1.08 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 150 V
-40°C ~ 150°C
Surface Mount
8-PowerTDFN
FlatPAK (5x6)
MBR3U200-TP
Micro Commercial Co

DIODE ARR SCHOTT 200V 3A TO277

  • Diode Configuration: -
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 3A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 200 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277
패키지: -
재고11,850
Schottky
200 V
3A
850 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 200 V
-55°C ~ 150°C
Surface Mount
TO-277, 3-PowerDFN
TO-277