페이지 291 - 다이오드 - 정류기 - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 어레이

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제조업체
설명
패키지
재고
수량
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
UFT5010A
Microsemi Corporation

RECTIFIER ARRAY 200V 50A TO-3

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 25A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 15µA @ 100V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,720
Standard
100V
25A
1V @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
15µA @ 100V
-65°C ~ 175°C
-
-
-
MBRB20H100CTHE3/81
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO263

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4.5µA @ 100V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,152
Schottky
100V
10A
770mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
4.5µA @ 100V
-65°C ~ 175°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot 88CNQ060ASM
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 60V D618SM

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 640µA @ 60V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: D-61-8-SM
  • Supplier Device Package: D-61-8-SM
패키지: D-61-8-SM
재고9,972
Schottky
60V
40A
580mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
640µA @ 60V
-55°C ~ 150°C
Through Hole
D-61-8-SM
D-61-8-SM
HFA30TA60CSTRL
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 600V 15A D2PAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 15A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,904
Standard
600V
15A (DC)
1.7V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
VSKDL240-06S10
Vishay Semiconductor Diodes Division

DIODE MODULE 600V 250A MAGNAPAK

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 250A
  • Voltage - Forward (Vf) (Max) @ If: 1.57V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1µs
  • Current - Reverse Leakage @ Vr: 50mA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
패키지: 3-MAGN-A-PAK?
재고6,864
Standard
600V
250A
1.57V @ 800A
Standard Recovery >500ns, > 200mA (Io)
1µs
50mA @ 600V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
DD710N16K
Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE MOD 1600V 1100A

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,024
-
-
-
-
-
-
-
-
-
-
-
MBRT40035R
GeneSiC Semiconductor

DIODE MODULE 35V 400A 3TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 400A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
패키지: Three Tower
재고5,520
Schottky, Reverse Polarity
35V
400A (DC)
750mV @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
MBR20035CT
GeneSiC Semiconductor

DIODE MODULE 35V 200A 2TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 200A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
패키지: Twin Tower
재고4,944
Schottky
35V
200A (DC)
650mV @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 20V
-
Chassis Mount
Twin Tower
Twin Tower
MSKD200-12
Microsemi Corporation

DIODE MODULE 1.2KV 200A SD2

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: SD2
패키지: D2
재고7,680
Standard
1200V
200A
1.3V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1200V
-
Chassis Mount
D2
SD2
VS-UFL130FA60
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 130A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 130A
  • Voltage - Forward (Vf) (Max) @ If: 1.88V @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 105ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
패키지: SOT-227-4, miniBLOC
재고3,344
Standard
600V
130A
1.88V @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
105ns
50µA @ 600V
-55°C ~ 175°C
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-HFA50PA60CHN3
Vishay Semiconductor Diodes Division

DIODE STANDARD 600V 25A TO247AC

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 23ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고6,192
Standard
600V
25A
1.7V @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
23ns
20µA @ 600V
-55°C ~ 150°C
Through Hole
TO-247-3
TO-247AC
VS-20CTH03-N3
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 300V 10A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 20µA @ 300V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,792
Standard
300V
10A
1.25V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
20µA @ 300V
175°C (Max)
Through Hole
TO-220-3
TO-220AB
MBR20100PT C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (TO-3P)
패키지: TO-247-3
재고4,672
Schottky
100V
20A
950mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-55°C ~ 150°C
Through Hole
TO-247-3
TO-247AD (TO-3P)
BYVF32-50HE3/45
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 50V 18A ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io) (per Diode): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
패키지: TO-220-3 Full Pack, Isolated Tab
재고5,824
Standard
50V
18A
1.15V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 50V
-65°C ~ 150°C
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
SBAV70LT3G
ON Semiconductor

DIODE ARRAY GP 100V 200MA SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 6ns
  • Current - Reverse Leakage @ Vr: 100µA @ 70V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
패키지: TO-236-3, SC-59, SOT-23-3
재고7,952
Standard
100V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
6ns
100µA @ 70V
-55°C ~ 150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FYA3010DNTU
Fairchild/ON Semiconductor

DIODE ARRAY SCHOTTKY 100V TO3P

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고7,200
Schottky
100V
30A
1.05V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
-65°C ~ 150°C
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot MMBD2838LT1G
ON Semiconductor

DIODE ARRAY GP 50V 100MA SOT23-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
패키지: TO-236-3, SC-59, SOT-23-3
재고2,654,832
Standard
50V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 50V
-55°C ~ 150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot STTH200L06TV1
STMicroelectronics

DIODE MODULE 600V 120A ISOTOP

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 120ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: ISOTOP?
패키지: ISOTOP
재고5,408
Standard
600V
120A
1.55V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
100µA @ 600V
150°C (Max)
Chassis Mount
ISOTOP
ISOTOP?
hot BAT54AFILM
STMicroelectronics

DIODE ARRAY SCHOTTKY 40V SOT23-3

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 300mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 1µA @ 30V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고69,096
Schottky
40V
300mA (DC)
900mV @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
1µA @ 30V
-40°C ~ 150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
USD245CR
Microchip Technology

DIODE ARRAY SCHOTTKY 45V 4A TO39

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io) (per Diode): 4A
  • Voltage - Forward (Vf) (Max) @ If: 680 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 mA @ 45 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
패키지: -
Request a Quote
Schottky, Reverse Polarity
45 V
4A
680 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 mA @ 45 V
-65°C ~ 175°C
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
MBR2545CT_T0_00001
Panjit International Inc.

DIODE ARR SCHOTT 45V 25A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 45 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: -
재고5,544
Schottky
45 V
25A
700 mV @ 12.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 45 V
-65°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
BAW56S-DG-B3X
Nexperia USA Inc.

DIODE ARRAY GP 90V 250MA

  • Diode Configuration: 2 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io) (per Diode): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
Standard
90 V
250mA (DC)
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
500 nA @ 80 V
150°C (Max)
Surface Mount
-
-
BAS70-05W-QF
Nexperia USA Inc.

DIODE ARR SCHOTT 70V 70MA SOT323

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io) (per Diode): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 70 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
패키지: -
Request a Quote
Schottky
70 V
70mA (DC)
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
-
10 µA @ 70 V
150°C
Surface Mount
SC-70, SOT-323
SOT-323
SBM2060VCT_T0_00001
Panjit International Inc.

DIODE ARR SCHOTT 60V 10A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 220 µA @ 60 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: -
재고5,094
Schottky
60 V
10A
570 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
220 µA @ 60 V
-55°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
NTE645
NTE Electronics, Inc

DIODE ARRAY GP 8A TO220

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
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Standard
-
8A
1.3 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
10 µA @ 600 V
-65°C ~ 175°C
Through Hole
TO-220-3
TO-220
VS-8DKH02HM3-H
Vishay General Semiconductor - Diodes Division

DIODE ARRAY GP 200V 4A FLATPAK

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 4A
  • Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 200 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: FlatPAK 5x6 (Dual)
패키지: -
재고3,840
Standard
200 V
4A
960 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
2 µA @ 200 V
-55°C ~ 175°C
Surface Mount
8-PowerTDFN
FlatPAK 5x6 (Dual)
GD2X30MPS12D
GeneSiC Semiconductor

DIODE ARR SIC 1200V 55A TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 55A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고3,615
SiC (Silicon Carbide) Schottky
1200 V
55A (DC)
1.8 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 1200 V
-55°C ~ 175°C
Through Hole
TO-247-3
TO-247-3
MBRB2060CTT4
onsemi

DIODE ARR SCHOTT 60V 10A D2PAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 60 V
  • Operating Temperature - Junction: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: -
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Schottky
60 V
10A
950 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 60 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK