페이지 356 - 다이오드 - 정류기 - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 어레이

기록 16,443
페이지  356/588
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제조업체
설명
패키지
재고
수량
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
IDW24G65C5BXKSA1
Infineon Technologies

DIODE SCHOTTKY 650V 12A TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 190µA @ 650V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고5,168
Silicon Carbide Schottky
650V
12A (DC)
1.7V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
190µA @ 650V
-55°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
FST7340M
GeneSiC Semiconductor

DIODE SCHOTTKY 40V 35A D61-3M

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: D61-3M
  • Supplier Device Package: D61-3M
패키지: D61-3M
재고5,920
Schottky
40V
35A
700mV @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-55°C ~ 150°C
Chassis Mount
D61-3M
D61-3M
MBRT30045L
GeneSiC Semiconductor

DIODE SCHOTTKY 45V 150A 3 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 45V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
패키지: Three Tower
재고6,016
Schottky
45V
150A
600mV @ 150A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 45V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
STPS10SM80CFP
STMicroelectronics

DIODE ARRAY SCHOTTKY 80V TO220FP

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 745mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15µA @ 80V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220 Full Pack
패키지: TO-220-3 Full Pack
재고5,072
Schottky
80V
5A
745mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
15µA @ 80V
175°C (Max)
Through Hole
TO-220-3 Full Pack
TO-220 Full Pack
MBR25H35CTHE3/45
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 35V TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 640mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 35V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고3,776
Schottky
35V
15A
640mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
-65°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
hot SS8P4CHM3/86A
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 40V TO277A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 4A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 40V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
패키지: TO-277, 3-PowerDFN
재고123,600
Schottky
40V
4A
580mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 40V
-55°C ~ 150°C
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
NSR15SDW1T1G
ON Semiconductor

DIODE ARRAY SCHOTTKY 15V SC88

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io) (per Diode): 30mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 680mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50nA @ 1V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고3,392
Schottky
15V
30mA (DC)
680mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
50nA @ 1V
-65°C ~ 150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot 30CTQ040
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 40V TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 40V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고15,552
Schottky
40V
15A
620mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 40V
-55°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
309CNQ135
SMC Diode Solutions

DIODE SCHOTTKY 135V 150A PRM4

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 135V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.03V @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 135V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: PRM4
  • Supplier Device Package: PRM4 (Non-Isolated)
패키지: PRM4
재고3,072
Schottky
135V
150A
1.03V @ 150A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 135V
-55°C ~ 175°C
Chassis Mount
PRM4
PRM4 (Non-Isolated)
MBR200150CT
GeneSiC Semiconductor

DIODE SCHOTTKY 150V 100A 2 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 150V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
패키지: Twin Tower
재고3,008
Schottky
150V
100A
880mV @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 150V
-55°C ~ 150°C
Chassis Mount
Twin Tower
Twin Tower
VI40150C-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40A 150V TO-262AA

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.43V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 150V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고2,736
Schottky
150V
20A
1.43V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 150V
-55°C ~ 150°C
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262AA
BYV410X-600,127
WeEn Semiconductors

DIODE ARRAY UF 600V 10A TO220-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220-3
패키지: TO-220-3 Full Pack, Isolated Tab
재고5,616
Standard
600V
10A
2.1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
50µA @ 600V
150°C (Max)
Through Hole
TO-220-3 Full Pack, Isolated Tab
TO-220-3
SRS2060 MNG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,792
Standard
60V
20A
700mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
hot MBR20200CTF-E1
Diodes Incorporated

DIODE ARRAY SCHOTTKY 200V TO220

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 200V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-3
패키지: TO-220-3 Full Pack
재고16,680
Schottky
200V
10A
900mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 200V
-65°C ~ 150°C
Through Hole
TO-220-3 Full Pack
TO-220F-3
TSF30U100C C0G
TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 30A, 10

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 740mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
패키지: TO-220-3 Full Pack, Isolated Tab
재고5,936
Schottky
100V
15A
740mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
-55°C ~ 150°C
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
MBR2X100A180
GeneSiC Semiconductor

DIODE SCHOTTKY 180V 200A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 180V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 180V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
패키지: SOT-227-4, miniBLOC
재고6,704
Schottky
180V
200A
920mV @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 180V
-40°C ~ 150°C
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
hot BAV70
Panasonic Electronic Components

DIODE ARRAY GP 80V 200MA SOT23-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100nA @ 80V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고39,008,592
Standard
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
-
100nA @ 80V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
GB20SLT12-247D
GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 25A TO247D

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고8,592
Silicon Carbide Schottky
1200V
25A
1.8V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 1200V
-55°C ~ 175°C
Through Hole
TO-247-3
TO-247
BAS70-05
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 70V 70MA SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io) (per Diode): 70mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Operating Temperature - Junction: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: -
Request a Quote
Schottky
70 V
70mA
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
100 nA @ 50 V
-55°C ~ 125°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MBR10150CTL
Diodes Incorporated

DIODE SCHOTTKY TO220

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MBR1045CTH
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 45V 10A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 45 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: -
Request a Quote
Schottky
45 V
10A
800 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 45 V
-55°C ~ 150°C
Through Hole
TO-220-3
TO-220AB
UC3611J
Texas Instruments

DIODE ARRAY SCHOTT 50V 1A 8CDIP

  • Diode Configuration: 4 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io) (per Diode): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 50 V
  • Operating Temperature - Junction: 0°C ~ 70°C
  • Mounting Type: Through Hole
  • Package / Case: 8-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 8-CDIP
패키지: -
Request a Quote
Schottky
50 V
1A
1.2 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
20 ns
100 µA @ 50 V
0°C ~ 70°C
Through Hole
8-CDIP (0.300", 7.62mm)
8-CDIP
NTST30100CTH
onsemi

DIODE ARR SCHOTT 100V 15A TO220

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 100 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
Request a Quote
Schottky
100 V
15A
850 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 100 V
-40°C ~ 150°C
Through Hole
TO-220-3
TO-220
CBAT54C-TR-PBFREE
Central Semiconductor Corp

DIODE ARR SCHOTT 30V 200MA SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io) (per Diode): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: -
재고14,601
Schottky
30 V
200mA
800 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
-65°C ~ 150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
SBL1040CT804HE3-45
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 40V 5A TO220-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Operating Temperature - Junction: -40°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: -
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Schottky
40 V
5A
550 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
-40°C ~ 125°C
Through Hole
TO-220-3
TO-220-3
FERD30L60CTS
STMicroelectronics

DIODE ARRAY FERD 60V 15A TO220

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: FERD (Field Effect Rectifier Diode)
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 545 mV @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 820 µA @ 60 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
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FERD (Field Effect Rectifier Diode)
60 V
15A
545 mV @ 15 A
No Recovery Time > 500mA (Io)
-
820 µA @ 60 V
150°C (Max)
Through Hole
TO-220-3
TO-220
DCA100AA60
SanRex Corporation

DIODE MODULE GP 600V 100A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300 ns
  • Current - Reverse Leakage @ Vr: 100 mA @ 600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
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Standard
600 V
100A
1.3 V @ 100 A
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
100 mA @ 600 V
-40°C ~ 150°C
Chassis Mount
Module
-
V8K202DUHM3-H
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOTT 200V 1.8A FLTPK

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 1.8A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: FlatPAK 5x6 (Dual)
패키지: -
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Schottky
200 V
1.8A
920 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 200 V
-40°C ~ 150°C
Surface Mount
8-PowerTDFN
FlatPAK 5x6 (Dual)