페이지 1018 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
HS183100R	Microsemi Corporation	DIODE MODULE 100V 180A HALF-PAK Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 180A Voltage - Forward (Vf) (Max) @ If: 910mV @ 180A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 100V Capacitance @ Vr, F: 4800pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	패키지: HALF-PAK	재고4,640	100V	180A	910mV @ 180A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 100V	4800pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
LLSD101C-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 15MA MINIMELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 15mA (DC) Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-213AC, MINI-MELF, SOD-80	재고7,312	40V	15mA (DC)	900mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 30V	-	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-55°C ~ 150°C
MUR450PFRLG	ON Semiconductor	DIODE GEN PURP 520V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 520V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95ns Current - Reverse Leakage @ Vr: 5µA @ 520V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-201AA, DO-27, Axial	재고2,832	520V	4A	1.15V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	95ns	5µA @ 520V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C
SBM540-13	Diodes Incorporated	DIODE SCHOTTKY 40V 5A POWERMITE3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Powermite?3 Supplier Device Package: Powermite 3 Operating Temperature - Junction: -55°C ~ 125°C	패키지: Powermite?3	재고5,424	40V	5A	520mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	250pF @ 4V, 1MHz	Surface Mount	Powermite?3	Powermite 3	-55°C ~ 125°C
30WQ06FNTR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 3.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고113,100	60V	3.5A	610mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 60V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
VS-30ETH06FP-N3	Vishay Semiconductor Diodes Division	DIODE FRED 30A 600V TO-220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-220-2 Full Pack	재고4,256	600V	30A	2.6V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220FP	-65°C ~ 175°C
VI20100SGHM3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20A 100V TO-262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.07V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 350µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고3,888	100V	20A	1.07V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	350µA @ 100V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-40°C ~ 150°C
BYV28-050-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 50V 3.5A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-64, Axial	재고7,280	50V	3.5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 50V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
SR803 B0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-201AD, Axial	재고3,440	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
GF1GHE3/5CA	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214BA	재고5,840	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 400V	-	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
ES2FAHM2G	TSC America Inc.	DIODE, SUPER FAST, 2A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고5,104	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N4944GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고6,176	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
BAT54-HE3-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 200MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 125°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고5,744	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	125°C (Max)
RB578VAM100TR	Rohm Semiconductor	DIODE SCHOTTKY 100V 700MA TUMD2M Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 850mV @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max)	패키지: 2-SMD, Flat Lead	재고3,376	100V	700mA	850mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200nA @ 100V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)
US1G-TP	Micro Commercial Co	DIODE GEN PURP 400V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214AC, SMA	재고3,728	400V	1A	1.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
MBRM120LT3G	ON Semiconductor	DIODE SCHOTTKY 20V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-216AA	재고947,448	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
RF505BGE6STL	Rohm Semiconductor	DIODE GEN PURP 600V 5A TO252GE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C	패키지: -	재고7,413	600 V	5A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252GE	150°C
NTE6045	NTE Electronics, Inc	DIODE GEN PURP 1KV 60A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	1000 V	60A	1.4 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 1000 V	-	Stud Mount	DO-203AA, DO-5, Stud	DO-5	-65°C ~ 175°C
SK5200L-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 200 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	5A	900 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 200 V	200pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
1N1344RA	Solid State Inc.	DIODE GEN PURP REV 200V 16A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	200 V	16A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
SBR2U10LP-13	Diodes Incorporated	DIODE SBR 10V 2A 3DFN Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 10 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 460 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 2 mA @ 10 V Capacitance @ Vr, F: 102pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 3-UDFN Supplier Device Package: 3-X1-DFN1411 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	10 V	2A	460 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	2 mA @ 10 V	102pF @ 5V, 1MHz	Surface Mount	3-UDFN	3-X1-DFN1411	-65°C ~ 150°C
JANTX1N6659R	Microchip Technology	DIODE GEN PURP 200V 15A TO254 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 150pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254 Operating Temperature - Junction: -	패키지: -	Request a Quote	200 V	15A	1.2 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	150pF @ 10V, 1MHz	Through Hole	TO-254-3, TO-254AA	TO-254	-
JAN1N6911UTK2CS	Microchip Technology	DIODE SCHOTTKY 30V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	30 V	25A	540 mV @ 25 A	No Recovery Time > 500mA (Io)	-	1.2 mA @ 30 V	-	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 150°C
VS-100BGQ015-N4	Vishay General Semiconductor - Diodes Division	SCHOTTKY RECT 15V 100A POWLRTAB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 15 V Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: PowerTab® Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	15 V	100A	520 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 15 V	3800pF @ 5V, 1MHz	Through Hole	PowerTab®	PowerTab®	-55°C ~ 125°C
S4D15120A	SMC Diode Solutions	DIODE SIL CARB 1.2KV 15A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 35 µA @ 1200 V Capacitance @ Vr, F: 1200pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC (TO-220-2) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고834	1200 V	15A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	35 µA @ 1200 V	1200pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC (TO-220-2)	-55°C ~ 175°C
FR306BULK	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	800 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	10 µA @ 800 V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
S6D02065E	SMC Diode Solutions	650V, 2A, DPAK, SIC SCHOTTKY DIO Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고498	-	-	-	-	-	-	-	-	-	-	-
RBR3L40ADDTE25	Rohm Semiconductor	DIODE SCHOTTKY 40V 3A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	패키지: -	재고4,635	40 V	3A	690 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C

HS183100R

Microsemi Corporation

DIODE MODULE 100V 180A HALF-PAK

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 180A
Voltage - Forward (Vf) (Max) @ If: 910mV @ 180A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 100V
Capacitance @ Vr, F: 4800pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

패키지: HALF-PAK

재고4,640

100V

180A

910mV @ 180A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 100V

4800pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

-

LLSD101C-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 15MA MINIMELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 15mA (DC)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 200nA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-213AC, MINI-MELF, SOD-80

재고7,312

40V

15mA (DC)

900mV @ 15mA

Small Signal =< 200mA (Io), Any Speed

1ns

200nA @ 30V

-

Surface Mount

DO-213AC, MINI-MELF, SOD-80

Mini MELF

-55°C ~ 150°C

MUR450PFRLG

ON Semiconductor

DIODE GEN PURP 520V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 520V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95ns
Current - Reverse Leakage @ Vr: 5µA @ 520V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-201AA, DO-27, Axial

재고2,832

520V

4A

1.15V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

95ns

5µA @ 520V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 175°C

SBM540-13

Diodes Incorporated

DIODE SCHOTTKY 40V 5A POWERMITE3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: Powermite?3
Supplier Device Package: Powermite 3
Operating Temperature - Junction: -55°C ~ 125°C

패키지: Powermite?3

재고5,424

40V

5A

520mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

250pF @ 4V, 1MHz

Surface Mount

Powermite?3

Powermite 3

-55°C ~ 125°C

30WQ06FNTR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3.5A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고113,100

60V

3.5A

610mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 60V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

VS-30ETH06FP-N3

Vishay Semiconductor Diodes Division

DIODE FRED 30A 600V TO-220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-220-2 Full Pack

재고4,256

600V

30A

2.6V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220FP

-65°C ~ 175°C

VI20100SGHM3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 100V TO-262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.07V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 350µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고3,888

100V

20A

1.07V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

350µA @ 100V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-40°C ~ 150°C

BYV28-050-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 50V 3.5A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-64, Axial

재고7,280

50V

3.5A

1.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 50V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

SR803 B0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-201AD, Axial

재고3,440

30V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

GF1GHE3/5CA

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214BA

재고5,840

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 400V

-

Surface Mount

DO-214BA

DO-214BA (GF1)

-65°C ~ 175°C

ES2FAHM2G

TSC America Inc.

DIODE, SUPER FAST, 2A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고5,104

300V

2A

1.3V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 300V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N4944GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고6,176

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

BAT54-HE3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 125°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고5,744

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

125°C (Max)

RB578VAM100TR

Rohm Semiconductor

DIODE SCHOTTKY 100V 700MA TUMD2M

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 850mV @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200nA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)

패키지: 2-SMD, Flat Lead

재고3,376

100V

700mA

850mV @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

-

200nA @ 100V

-

Surface Mount

2-SMD, Flat Lead

TUMD2M

150°C (Max)

US1G-TP

Micro Commercial Co

DIODE GEN PURP 400V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AC, SMA

재고3,728

400V

1A

1.4V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 175°C

MBRM120LT3G

ON Semiconductor

DIODE SCHOTTKY 20V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-216AA

재고947,448

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 20V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

RF505BGE6STL

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO252GE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C

패키지: -

재고7,413

600 V

5A

1.7 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252GE

150°C

NTE6045

NTE Electronics, Inc

DIODE GEN PURP 1KV 60A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

1000 V

60A

1.4 V @ 60 A

Standard Recovery >500ns, > 200mA (Io)

-

10 mA @ 1000 V

-

Stud Mount

DO-203AA, DO-5, Stud

DO-5

-65°C ~ 175°C

SK5200L-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

5A

900 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 200 V

200pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

1N1344RA

Solid State Inc.

DIODE GEN PURP REV 200V 16A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

200 V

16A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

SBR2U10LP-13

Diodes Incorporated

DIODE SBR 10V 2A 3DFN

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 10 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 2 mA @ 10 V
Capacitance @ Vr, F: 102pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Supplier Device Package: 3-X1-DFN1411
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

10 V

2A

460 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

2 mA @ 10 V

102pF @ 5V, 1MHz

Surface Mount

3-UDFN

3-X1-DFN1411

-65°C ~ 150°C

JANTX1N6659R

Microchip Technology

DIODE GEN PURP 200V 15A TO254

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA
Supplier Device Package: TO-254
Operating Temperature - Junction: -

패키지: -

Request a Quote

200 V

15A

1.2 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

150pF @ 10V, 1MHz

Through Hole

TO-254-3, TO-254AA

TO-254

-

JAN1N6911UTK2CS

Microchip Technology

DIODE SCHOTTKY 30V 25A THINKEY2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 25 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.2 mA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

30 V

25A

540 mV @ 25 A

No Recovery Time > 500mA (Io)

-

1.2 mA @ 30 V

-

Surface Mount

ThinKey™2

-65°C ~ 150°C

VS-100BGQ015-N4

Vishay General Semiconductor - Diodes Division

SCHOTTKY RECT 15V 100A POWLRTAB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 100 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 15 V
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: PowerTab®
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

15 V

100A

520 mV @ 100 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 mA @ 15 V

3800pF @ 5V, 1MHz

Through Hole

PowerTab®

-55°C ~ 125°C

S4D15120A

SMC Diode Solutions

DIODE SIL CARB 1.2KV 15A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 35 µA @ 1200 V
Capacitance @ Vr, F: 1200pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC (TO-220-2)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고834

1200 V

15A

1.8 V @ 15 A

No Recovery Time > 500mA (Io)

0 ns

35 µA @ 1200 V

1200pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC (TO-220-2)

-55°C ~ 175°C

FR306BULK

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

800 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

10 µA @ 800 V

60pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

S6D02065E

SMC Diode Solutions

650V, 2A, DPAK, SIC SCHOTTKY DIO

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고498

-

RBR3L40ADDTE25

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

패키지: -

재고4,635

40 V

3A

690 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 40 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C