페이지 1034 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTXV1N5802	Microsemi Corporation	DIODE GEN PURP 50V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	패키지: A, Axial	재고4,352	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
AR3PDHM3/87A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.8A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 44pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-277, 3-PowerDFN	재고7,808	200V	1.8A (DC)	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	10µA @ 200V	44pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
80SQ045N	ON Semiconductor	DIODE SCHOTTKY 45V 8A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-201AA, DO-27, Axial	재고6,848	45V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C
301U140 G R BL	Vishay Semiconductor Opto Division	DIODE GEN PURP 1.4KV 300A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.22V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-205AB, DO-9, Stud	재고7,440	1400V	300A	1.22V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 1400V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
VS-VSKE56/08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 60A ADDAPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: ADD-A-PAK (3) Supplier Device Package: ADD-A-PAK? Operating Temperature - Junction: -40°C ~ 150°C	패키지: ADD-A-PAK (3)	재고2,400	800V	60A	-	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 800V	-	Chassis Mount	ADD-A-PAK (3)	ADD-A-PAK?	-40°C ~ 150°C
VS-25FR10M	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 25A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 78A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-203AA, DO-4, Stud	재고4,960	100V	25A	1.3V @ 78A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
PF170	Semtech Corporation	DIODE GEN PURP 16KV 3MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 16000V Current - Average Rectified (Io): 3mA Voltage - Forward (Vf) (Max) @ If: 52V @ 20mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100nA @ 16000V Capacitance @ Vr, F: 4pF @ 5V, 1MHz Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고4,240	16000V	3mA	52V @ 20mA	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100nA @ 16000V	4pF @ 5V, 1MHz	-	-	-	-
UFS320GE3/TR13	Microsemi Corporation	DIODE GEN PURP 200V 3A DO215AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-215AB, SMC Gull Wing	재고4,928	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 200V	-	Surface Mount	DO-215AB, SMC Gull Wing	DO-215AB	-55°C ~ 175°C
FESB16HT-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 145pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,216	500V	16A	1.5V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 500V	145pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
HSM320JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 3A 20V SMCJ Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고2,528	-	-	-	-	-	-	-	-	-	-	-
SRAS890 MNG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,488	90V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
NSR0170P2T5G	ON Semiconductor	DIODE SCHOTTKY 70V 70MA SOD923 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 730mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3µA @ 70V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C	패키지: SOD-923	재고2,667,012	70V	70mA (DC)	730mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	3µA @ 70V	2pF @ 0V, 1MHz	Surface Mount	SOD-923	SOD-923	-55°C ~ 150°C
RS1PBHM3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-220AA	재고5,488	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
S1JL RVG	TSC America Inc.	DIODE, 1A, 600V, SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-219AB	재고630,000	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
TS4148C RZG	TSC America Inc.	DIODE, SWITCHING & ARRAY, 0.1A, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Operating Temperature - Junction: -55°C ~ 150°C	패키지: 0603 (1608 Metric)	재고4,928	75V	150mA	1.25V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	0603 (1608 Metric)	0603	-55°C ~ 150°C
STPS3L40S	STMicroelectronics	DIODE SCHOTTKY 40V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: 150°C (Max)	패키지: DO-214AB, SMC	재고1,110,504	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	DO-214AB, SMC	SMC	150°C (Max)
RF081L2STE25	Rohm Semiconductor	DIODE GEN PURP 200V 1A PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1.1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	패키지: DO-214AC, SMA	재고108,000	200V	1A	980mV @ 1.1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 200V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
SURA8120T3G	ON Semiconductor	DIODE GEN PURP 200V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214AC, SMA	재고625,632	200V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 200V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
STPS0530Z	STMicroelectronics	DIODE SCHOTTKY 30V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 130µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max)	패키지: SOD-123	재고394,380	30V	500mA	430mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	130µA @ 30V	-	Surface Mount	SOD-123	SOD-123	150°C (Max)
BAS70W-7-F	Diodes Incorporated	DIODE SCHOTTKY 70V 70MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 125°C	패키지: SC-70, SOT-323	재고2,941,884	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	5ns	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 125°C
1N2464	Microchip Technology	DIODE GEN PURP 350V 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 350 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 350 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	350 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 350 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
1N3595US-1	Microchip Technology	DIODE GP 125V 200MA SQ-MELF B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 1 nA @ 125 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	125 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
DSC06A065FP	Diodes Incorporated	SILICON CARBIDE RECTIFIER ITO-22 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: 273pF @ 100mV, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC (Type WX) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고150	650 V	6A	1.5 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	273pF @ 100mV, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC (Type WX)	-55°C ~ 175°C
S3DB-HF	Comchip Technology	DIODE GP 200V 3A SMB/DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	35pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C
PNE20040EPX	Nexperia USA Inc.	PNE20040EP/SOD128/FLATPOWER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C	패키지: -	Request a Quote	200 V	4A	930 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 200 V	55pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	175°C
S8GCH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고8,985	400 V	8A	985 mV @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SMD310HE1Q-TP	Micro Commercial Co	DIODE SCHOTTKY 100V 3A SOD-123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE1 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	100 V	3A	800 mV @ 3 A	No Recovery Time > 500mA (Io)	-	5 µA @ 100 V	100pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE1	-55°C ~ 175°C
RB168VYM-40FHTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A TUMD2M Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6.7 ns Current - Reverse Leakage @ Vr: 500 nA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max)	패키지: -	재고11,178	40 V	1A	790 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	6.7 ns	500 nA @ 40 V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)

JANTXV1N5802

Microsemi Corporation

DIODE GEN PURP 50V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

패키지: A, Axial

재고4,352

50V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 50V

25pF @ 10V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

AR3PDHM3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.8A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

재고7,808

200V

1.8A (DC)

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

10µA @ 200V

44pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

80SQ045N

ON Semiconductor

DIODE SCHOTTKY 45V 8A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-201AA, DO-27, Axial

재고6,848

45V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 175°C

301U140 G R BL

Vishay Semiconductor Opto Division

DIODE GEN PURP 1.4KV 300A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.22V @ 942A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-205AB, DO-9, Stud

재고7,440

1400V

300A

1.22V @ 942A

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 1400V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

VS-VSKE56/08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 60A ADDAPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: ADD-A-PAK (3)
Supplier Device Package: ADD-A-PAK?
Operating Temperature - Junction: -40°C ~ 150°C

패키지: ADD-A-PAK (3)

재고2,400

800V

60A

-

Standard Recovery >500ns, > 200mA (Io)

-

10mA @ 800V

-

Chassis Mount

ADD-A-PAK (3)

ADD-A-PAK?

-40°C ~ 150°C

VS-25FR10M

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 25A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 78A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-203AA, DO-4, Stud

재고4,960

100V

25A

1.3V @ 78A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 175°C

PF170

Semtech Corporation

DIODE GEN PURP 16KV 3MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 16000V
Current - Average Rectified (Io): 3mA
Voltage - Forward (Vf) (Max) @ If: 52V @ 20mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 100nA @ 16000V
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고4,240

16000V

3mA

52V @ 20mA

Fast Recovery =< 500ns, > 200mA (Io)

200ns

100nA @ 16000V

4pF @ 5V, 1MHz

-

UFS320GE3/TR13

Microsemi Corporation

DIODE GEN PURP 200V 3A DO215AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-215AB, SMC Gull Wing

재고4,928

200V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 200V

-

Surface Mount

DO-215AB, SMC Gull Wing

DO-215AB

-55°C ~ 175°C

FESB16HT-E3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 16A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 500V
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,216

500V

16A

1.5V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 500V

145pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

HSM320JE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 3A 20V SMCJ

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고2,528

-

SRAS890 MNG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고7,488

90V

8A

950mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

NSR0170P2T5G

ON Semiconductor

DIODE SCHOTTKY 70V 70MA SOD923

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 730mV @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3µA @ 70V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SOD-923

재고2,667,012

70V

70mA (DC)

730mV @ 15mA

Small Signal =< 200mA (Io), Any Speed

-

3µA @ 70V

2pF @ 0V, 1MHz

Surface Mount

SOD-923

-55°C ~ 150°C

RS1PBHM3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

재고5,488

100V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 100V

9pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

S1JL RVG

TSC America Inc.

DIODE, 1A, 600V, SUB SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-219AB

재고630,000

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 600V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

TS4148C RZG

TSC America Inc.

DIODE, SWITCHING & ARRAY, 0.1A,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Supplier Device Package: 0603
Operating Temperature - Junction: -55°C ~ 150°C

패키지: 0603 (1608 Metric)

재고4,928

75V

150mA

1.25V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

0603 (1608 Metric)

0603

-55°C ~ 150°C

STPS3L40S

STMicroelectronics

DIODE SCHOTTKY 40V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AB, SMC

재고1,110,504

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

-

Surface Mount

DO-214AB, SMC

SMC

150°C (Max)

RF081L2STE25

Rohm Semiconductor

DIODE GEN PURP 200V 1A PMDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1.1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AC, SMA

재고108,000

200V

1A

980mV @ 1.1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 200V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C (Max)

SURA8120T3G

ON Semiconductor

DIODE GEN PURP 200V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AC, SMA

재고625,632

200V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 200V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

STPS0530Z

STMicroelectronics

DIODE SCHOTTKY 30V 500MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 130µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123

재고394,380

30V

500mA

430mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

130µA @ 30V

-

Surface Mount

SOD-123

150°C (Max)

BAS70W-7-F

Diodes Incorporated

DIODE SCHOTTKY 70V 70MA SOT323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SC-70, SOT-323

재고2,941,884

70V

70mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

5ns

100nA @ 50V

2pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

-55°C ~ 125°C

1N2464

Microchip Technology

DIODE GEN PURP 350V 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 350 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 350 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

350 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

25 µA @ 350 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 200°C

1N3595US-1

Microchip Technology

DIODE GP 125V 200MA SQ-MELF B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

125 V

200mA

1 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

3 µs

1 nA @ 125 V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 150°C

DSC06A065FP

Diodes Incorporated

SILICON CARBIDE RECTIFIER ITO-22

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: 273pF @ 100mV, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고150

650 V

6A

1.5 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 650 V

273pF @ 100mV, 1MHz

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC (Type WX)

-55°C ~ 175°C

S3DB-HF

Comchip Technology

DIODE GP 200V 3A SMB/DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

3A

1.1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 200 V

35pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 150°C

PNE20040EPX

Nexperia USA Inc.

PNE20040EP/SOD128/FLATPOWER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C

패키지: -

Request a Quote

200 V

4A

930 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

1 µA @ 200 V

55pF @ 4V, 1MHz

Surface Mount

SOD-128

SOD-128/CFP5

175°C

S8GCH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 8A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고8,985

400 V

8A

985 mV @ 8 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

48pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

SMD310HE1Q-TP

Micro Commercial Co

DIODE SCHOTTKY 100V 3A SOD-123HE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE1
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

100 V

3A

800 mV @ 3 A

No Recovery Time > 500mA (Io)

-

5 µA @ 100 V

100pF @ 4V, 1MHz

Surface Mount

SOD-123H

SOD-123HE1

-55°C ~ 175°C

RB168VYM-40FHTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A TUMD2M

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6.7 ns
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고11,178

40 V

1A

790 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

6.7 ns

500 nA @ 40 V

-

Surface Mount

2-SMD, Flat Lead

TUMD2M

150°C (Max)