페이지 1043 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SD101CWS-13-F	Diodes Incorporated	DIODE SCHOTTKY 40V 15MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 15mA (DC) Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 30V Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 125°C	패키지: SC-76, SOD-323	재고5,984	40V	15mA (DC)	900mV @ 15mA	Fast Recovery =< 500ns, > 200mA (Io)	1ns	200nA @ 30V	2.2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 125°C
SF10HG-A	Diodes Incorporated	DIODE GEN PURP 500V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고4,160	500V	1A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SMD23HE-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 2A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 125°C	패키지: SOD-123H	재고2,208	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 125°C
DLM10E-AT1	ON Semiconductor	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	패키지: DO-204AL, DO-41, Axial	재고7,824	400V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
AR3PDHM3/86A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.8A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 44pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-277, 3-PowerDFN	재고6,352	200V	1.8A (DC)	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	10µA @ 200V	44pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
RGP15KHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1.5A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AC, DO-15, Axial	재고2,864	800V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
SF30BG-T	Diodes Incorporated	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AD, Axial	재고3,280	100V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
SBL530	Diodes Incorporated	DIODE SCHOTTKY 30V 5A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-2	재고7,888	30V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
MBR3100	ON Semiconductor	DIODE SCHOTTKY 100V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-201AA, DO-27, Axial	재고73,092	100V	3A	790mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 100V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C
D3001N58T	Infineon Technologies Industrial Power and Controls Americas	RECTIFIER DIODE 6800V 2800A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고2,368	-	-	-	-	-	-	-	-	-	-	-
D770N20T	Infineon Technologies Industrial Power and Controls Americas	DIODE RECTIFIER 1200V 1590A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고2,944	-	-	-	-	-	-	-	-	-	-	-
VS-87HFR60	Vishay Semiconductor Diodes Division	DIODE GENERAL PURPOSE 85A DO-5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고2,208	600V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
SFF1607G C0G	TSC America Inc.	DIODE, SUPER FAST, 16A, 500V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3 Full Pack, Isolated Tab	재고4,416	500V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
FMC-G28S	Sanken	DIODE GEN PURP 800V 3A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70ns Current - Reverse Leakage @ Vr: 100µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-220-2 Full Pack	재고7,184	800V	3A	3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	100µA @ 800V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-40°C ~ 150°C
SS32HE3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AB, SMC	재고6,848	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
CDBZC0130R-HF	Comchip Technology	DIODE SCHOTTKY 30V 100MA 0201 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 460mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300nA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: 0201/DFN0603 Operating Temperature - Junction: -40°C ~ 150°C	패키지: 0201 (0603 Metric)	재고3,728	30V	100mA	460mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	300nA @ 10V	-	Surface Mount	0201 (0603 Metric)	0201/DFN0603	-40°C ~ 150°C
FMY-1106S	Sanken	DIODE GEN PURP 600V 10A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-220-2 Full Pack	재고67,284	600V	10A	1.15V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	30µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-40°C ~ 150°C
EU02V1	Sanken	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고5,440	400V	1A	1.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
MBRS3201T3G	ON Semiconductor	DIODE SCHOTTKY 200V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 840mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고942,120	200V	3A	840mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1mA @ 200V	-	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
ESH3D-R7	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	200 V	3A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	5 µA @ 200 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
FSU08D60	KYOCERA AVX	DIODE GP 600V 8A TO220 FULL-MOLD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220-2 Full-Mold Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	8A	2.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	20 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	TO-220-2 Full-Mold	-55°C ~ 175°C
R307030F	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
31DF4	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 20 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고7,500	400 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	20 µA @ 400 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
CMSH3-60M-TR13-PBFREE	Central Semiconductor Corp	DIODE SCHOTTKY 60V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 280pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	재고284,619	60 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	280pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
S31160	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
D2601NH90TXPSA1	Infineon Technologies	DIODE GEN PURP 9KV 1790A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 9000 V Current - Average Rectified (Io): 1790A Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 mA @ 9000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: - Operating Temperature - Junction: 0°C ~ 140°C	패키지: -	Request a Quote	9000 V	1790A	5.5 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	150 mA @ 9000 V	-	Chassis Mount	DO-200AE	-	0°C ~ 140°C
GS2KAFC_R1_00001	Panjit International Inc.	DIODE GEN PURP 800V 2A SMAF-C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	800 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	18pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 150°C
IDWD75E120D7XKSA1	Infineon Technologies	INDUSTRY 14 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고720	-	-	-	-	-	-	-	-	-	-	-

SD101CWS-13-F

Diodes Incorporated

DIODE SCHOTTKY 40V 15MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 15mA (DC)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 200nA @ 30V
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 125°C

패키지: SC-76, SOD-323

재고5,984

40V

15mA (DC)

900mV @ 15mA

Fast Recovery =< 500ns, > 200mA (Io)

1ns

200nA @ 30V

2.2pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 125°C

SF10HG-A

Diodes Incorporated

DIODE GEN PURP 500V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 500V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고4,160

500V

1A

1.5V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 500V

50pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

SMD23HE-TP

Micro Commercial Co

DIODE SCHOTTKY 30V 2A SOD123HE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SOD-123H

재고2,208

30V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 125°C

DLM10E-AT1

ON Semiconductor

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

패키지: DO-204AL, DO-41, Axial

재고7,824

400V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)

AR3PDHM3/86A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.8A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

재고6,352

200V

1.8A (DC)

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

10µA @ 200V

44pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

RGP15KHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1.5A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AC, DO-15, Axial

재고2,864

800V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

SF30BG-T

Diodes Incorporated

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

재고3,280

100V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 100V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

SBL530

Diodes Incorporated

DIODE SCHOTTKY 30V 5A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2

재고7,888

30V

5A

550mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

MBR3100

ON Semiconductor

DIODE SCHOTTKY 100V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-201AA, DO-27, Axial

재고73,092

100V

3A

790mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

600µA @ 100V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 175°C

D3001N58T

Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE 6800V 2800A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고2,368

-

D770N20T

Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 1200V 1590A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고2,944

-

VS-87HFR60

Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고2,208

600V

85A

1.2V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

SFF1607G C0G

TSC America Inc.

DIODE, SUPER FAST, 16A, 500V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 500V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3 Full Pack, Isolated Tab

재고4,416

500V

16A

1.7V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 500V

50pF @ 4V, 1MHz

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

FMC-G28S

Sanken

DIODE GEN PURP 800V 3A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 100µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-2 Full Pack

재고7,184

800V

3A

3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

70ns

100µA @ 800V

-

Through Hole

TO-220-2 Full Pack

TO-220F-2L

-40°C ~ 150°C

SS32HE3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AB, SMC

재고6,848

20V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 125°C

CDBZC0130R-HF

Comchip Technology

DIODE SCHOTTKY 30V 100MA 0201

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 460mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300nA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: 0201/DFN0603
Operating Temperature - Junction: -40°C ~ 150°C

패키지: 0201 (0603 Metric)

재고3,728

30V

100mA

460mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

300nA @ 10V

-

Surface Mount

0201 (0603 Metric)

0201/DFN0603

-40°C ~ 150°C

FMY-1106S

Sanken

DIODE GEN PURP 600V 10A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-2 Full Pack

재고67,284

600V

10A

1.15V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

30µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220F-2L

-40°C ~ 150°C

EU02V1

Sanken

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고5,440

400V

1A

1.4V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

MBRS3201T3G

ON Semiconductor

DIODE SCHOTTKY 200V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고942,120

200V

3A

840mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

1mA @ 200V

-

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

ESH3D-R7

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

200 V

3A

900 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

5 µA @ 200 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 175°C

FSU08D60

KYOCERA AVX

DIODE GP 600V 8A TO220 FULL-MOLD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220-2 Full-Mold
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

600 V

8A

2.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

20 µA @ 600 V

-

Through Hole

TO-220-2 Full Pack

TO-220-2 Full-Mold

-55°C ~ 175°C

R307030F

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

31DF4

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고7,500

400 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

20 µA @ 400 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-40°C ~ 150°C

CMSH3-60M-TR13-PBFREE

Central Semiconductor Corp

DIODE SCHOTTKY 60V 3A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

재고284,619

60 V

3A

750 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

280pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

S31160

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

D2601NH90TXPSA1

Infineon Technologies

DIODE GEN PURP 9KV 1790A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 9000 V
Current - Average Rectified (Io): 1790A
Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: -
Operating Temperature - Junction: 0°C ~ 140°C

패키지: -

Request a Quote

9000 V

1790A

5.5 V @ 4000 A

Standard Recovery >500ns, > 200mA (Io)

-

150 mA @ 9000 V

-

Chassis Mount

DO-200AE

-

0°C ~ 140°C

GS2KAFC_R1_00001

Panjit International Inc.

DIODE GEN PURP 800V 2A SMAF-C

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

800 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 800 V

18pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF-C

-55°C ~ 150°C

IDWD75E120D7XKSA1

Infineon Technologies

INDUSTRY 14

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고720

-