페이지 1050 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
N6200D	Diodes Incorporated	DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고3,648	-	-	-	-	-	-	-	-	-	-	-
JAN1N1202AR	Microsemi Corporation	DIODE GEN PURP 200V 12A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고3,248	200V	12A	1.35V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
SS2P6HE3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-220AA	재고4,416	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	80pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
STTA506B-TR	STMicroelectronics	DIODE GEN PURP 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: 150°C (Max)	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,064	600V	5A	1.75V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	150°C (Max)
80EPF10	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 80A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-247-3	재고6,192	1000V	80A	1.35V @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	480ns	100µA @ 1000V	-	Through Hole	TO-247-3	TO-247AC	-65°C ~ 175°C
1N4007	Micro Commercial Co	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고33,049,872	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 1000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
R7220408ESOO	Powerex Inc.	DIODE MODULE 400V 800A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 800A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	패키지: DO-200AB, B-PUK	재고4,768	400V	800A	1.65V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 400V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
R6201640XXOO	Powerex Inc.	DIODE MODULE 1.6KV 400A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 9µs Current - Reverse Leakage @ Vr: 50mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	패키지: DO-200AA, A-PUK	재고3,200	1600V	400A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	9µs	50mA @ 1600V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
VS-VSKE236/04PBF	Vishay Semiconductor Diodes Division	DIODE MODULE 400V INT-A-PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 230A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3) Supplier Device Package: INT-A-PAK Operating Temperature - Junction: -	패키지: INT-A-PAK (3)	재고2,448	400V	230A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis Mount	INT-A-PAK (3)	INT-A-PAK	-
VS-12FR80	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.26V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-203AA, DO-4, Stud	재고2,784	800V	12A	1.26V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
SFAF2002GHC0G	TSC America Inc.	DIODE, SUPER FAST, 20A, 100V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 975mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack	재고6,464	100V	20A	975mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	170pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
RGP15J-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1.5A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AC, DO-15, Axial	재고72,000	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
LL4003G L0G	TSC America Inc.	DIODE, 1A, 200V, MELF (PLASTIC) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-213AB, MELF	재고5,552	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
RS1KL M2G	TSC America Inc.	DIODE, FAST, 0.8A, 800V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고4,688	800V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SK510B R5G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 5A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고3,520	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
VS-1N2128A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 60A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 188A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-203AB, DO-5, Stud	재고3,952	50V	60A	1.3V @ 188A	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 200°C
VS-15ETH03SPBF	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 15A 300V D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32ns Current - Reverse Leakage @ Vr: 40µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고15,576	300V	15A	1.25V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	32ns	40µA @ 300V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
SD101AW-E3-08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 400MW 60V SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 30mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	패키지: SOD-123	재고26,112	60V	30mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
VS-HFA16TB120-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 16A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 3V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135ns Current - Reverse Leakage @ Vr: 20µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고12,498	1200V	16A	3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	20µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
D1481N65TXPSA1	Infineon Technologies	DIODE GEN PURP 6.5KV 2200A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 6500 V Current - Average Rectified (Io): 2200A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 6500 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	패키지: -	Request a Quote	6500 V	2200A	1.8 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 6500 V	-	Clamp On	DO-200AC, K-PUK	-	-40°C ~ 160°C
GN3A	Good-Ark Semiconductor	RECTIFIER, GENERAL PURPOSE, 3A, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,000	50 V	3A	1.15 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.8 µs	10 µA @ 50 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
UF803_T0_00001	Panjit International Inc.	DIODE GEN PURP 300V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고6,000	300 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 300 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
1N6761	Microchip Technology	DIODE SCHOTTKY 100V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO041, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	100 V	1A	690 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	70pF @ 5V, 1MHz	Through Hole	DO-204AL, DO041, Axial	DO-41	-65°C ~ 150°C
EM513	Diotec Semiconductor	DIODE GEN PURP 1.6KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-41, Axial Supplier Device Package: DO-204AC (DO-41) Operating Temperature - Junction: -50°C ~ 175°C	패키지: -	재고28,962	1600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1600 V	-	Through Hole	DO-204AC, DO-41, Axial	DO-204AC (DO-41)	-50°C ~ 175°C
SF24G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고10,500	200 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
TR00278	onsemi	REC MICRO BUTTON SPECIAL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MSC030SDA330B	Microchip Technology	DIODE SIL CARB 3.3KV 30A TO247 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 3300 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -	패키지: -	Request a Quote	3300 V	30A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	Through Hole	TO-247-2	TO-247	-
SS36HM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	60 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

N6200D

Diodes Incorporated

DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고3,648

-

JAN1N1202AR

Microsemi Corporation

DIODE GEN PURP 200V 12A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고3,248

200V

12A

1.35V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

SS2P6HE3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

재고4,416

60V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

80pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

STTA506B-TR

STMicroelectronics

DIODE GEN PURP 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: 150°C (Max)

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,064

600V

5A

1.75V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

150°C (Max)

80EPF10

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 80A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-247-3

재고6,192

1000V

80A

1.35V @ 80A

Fast Recovery =< 500ns, > 200mA (Io)

480ns

100µA @ 1000V

-

Through Hole

TO-247-3

TO-247AC

-65°C ~ 175°C

1N4007

Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고33,049,872

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 1000V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

R7220408ESOO

Powerex Inc.

DIODE MODULE 400V 800A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 800A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 50mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

패키지: DO-200AB, B-PUK

재고4,768

400V

800A

1.65V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

2µs

50mA @ 400V

-

Chassis Mount

DO-200AB, B-PUK

-

R6201640XXOO

Powerex Inc.

DIODE MODULE 1.6KV 400A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 400A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9µs
Current - Reverse Leakage @ Vr: 50mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

패키지: DO-200AA, A-PUK

재고3,200

1600V

400A

1.5V @ 800A

Standard Recovery >500ns, > 200mA (Io)

9µs

50mA @ 1600V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

VS-VSKE236/04PBF

Vishay Semiconductor Diodes Division

DIODE MODULE 400V INT-A-PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 230A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3)
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -

패키지: INT-A-PAK (3)

재고2,448

400V

230A

-

Standard Recovery >500ns, > 200mA (Io)

-

Chassis Mount

INT-A-PAK (3)

INT-A-PAK

-

VS-12FR80

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.26V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-203AA, DO-4, Stud

재고2,784

800V

12A

1.26V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

12mA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 175°C

SFAF2002GHC0G

TSC America Inc.

DIODE, SUPER FAST, 20A, 100V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack

재고6,464

100V

20A

975mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 100V

170pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

RGP15J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AC, DO-15, Axial

재고72,000

600V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

LL4003G L0G

TSC America Inc.

DIODE, 1A, 200V, MELF (PLASTIC)

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-213AB, MELF

재고5,552

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

MELF

-65°C ~ 150°C

RS1KL M2G

TSC America Inc.

DIODE, FAST, 0.8A, 800V, 500NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고4,688

800V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

SK510B R5G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고3,520

100V

5A

850mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

VS-1N2128A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 60A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 188A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-203AB, DO-5, Stud

재고3,952

50V

60A

1.3V @ 188A

Standard Recovery >500ns, > 200mA (Io)

-

10mA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 200°C

VS-15ETH03SPBF

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 15A 300V D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32ns
Current - Reverse Leakage @ Vr: 40µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고15,576

300V

15A

1.25V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

32ns

40µA @ 300V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

SD101AW-E3-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 400MW 60V SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 30mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 200nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SOD-123

재고26,112

60V

30mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

1ns

200nA @ 50V

2pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 125°C

VS-HFA16TB120-N3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 16A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 3V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135ns
Current - Reverse Leakage @ Vr: 20µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고12,498

1200V

16A

3V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

135ns

20µA @ 1200V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

D1481N65TXPSA1

Infineon Technologies

DIODE GEN PURP 6.5KV 2200A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 6500 V
Current - Average Rectified (Io): 2200A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 mA @ 6500 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 160°C

패키지: -

Request a Quote

6500 V

2200A

1.8 V @ 2500 A

Standard Recovery >500ns, > 200mA (Io)

-

50 mA @ 6500 V

-

Clamp On

DO-200AC, K-PUK

-

-40°C ~ 160°C

GN3A

Good-Ark Semiconductor

RECTIFIER, GENERAL PURPOSE, 3A,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고18,000

50 V

3A

1.15 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

1.8 µs

10 µA @ 50 V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

UF803_T0_00001

Panjit International Inc.

DIODE GEN PURP 300V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고6,000

300 V

8A

1.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

1 µA @ 300 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

1N6761

Microchip Technology

DIODE SCHOTTKY 100V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO041, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

100 V

1A

690 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

70pF @ 5V, 1MHz

Through Hole

DO-204AL, DO041, Axial

DO-41

-65°C ~ 150°C

EM513

Diotec Semiconductor

DIODE GEN PURP 1.6KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-41, Axial
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C

패키지: -

재고28,962

1600 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 1600 V

-

Through Hole

DO-204AC, DO-41, Axial

DO-204AC (DO-41)

-50°C ~ 175°C

SF24G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고10,500

200 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

40pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

TR00278

onsemi

REC MICRO BUTTON SPECIAL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

MSC030SDA330B

Microchip Technology

DIODE SIL CARB 3.3KV 30A TO247

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 3300 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -

패키지: -

Request a Quote

3300 V

30A

-

No Recovery Time > 500mA (Io)

0 ns

-

Through Hole

TO-247-2

TO-247

-

SS36HM3_A-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

60 V

3A

750 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C