페이지 1104 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
A451PM	Powerex Inc.	DIODE MODULE 1.6KV 2500A DO200AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 2500A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 5000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AC, K-PUK Supplier Device Package: DO-200AC, K-PUK Operating Temperature - Junction: -	패키지: DO-200AC, K-PUK	재고6,128	1600V	2500A	1.4V @ 5000A	Standard Recovery >500ns, > 200mA (Io)	-	50mA @ 1600V	-	Chassis Mount	DO-200AC, K-PUK	DO-200AC, K-PUK	-
1N5831R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 35V DO4 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 580mV @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고7,200	35V	25A	580mV @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 20V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
1N6545	Microsemi Corporation	DIODE RECT ULT FAST REC A-PKG Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고3,456	-	-	-	-	-	-	-	-	-	-	-
1N486BUR	Microsemi Corporation	DIODE RECT STD RECOVERY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고2,928	-	-	-	-	-	-	-	-	-	-	-
VS-8EWF02STR-M3	Vishay Semiconductor Diodes Division	DIODE FAST RECOVERY 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,184	200V	8A	1.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	100µA @ 200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
SSL32HR7G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 410mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AB, SMC	재고6,864	20V	3A	410mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
SDT8A100P5-13	Diodes Incorporated	SCHOTTKY RECTIFIER PDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -55°C ~ 150°C	패키지: PowerDI? 5	재고5,600	100V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-55°C ~ 150°C
UG4A-M3/73	Vishay Semiconductor Diodes Division	DIODE 4A 50V 20NS DO-201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고4,912	50V	4A	950mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR302HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-201AD, Axial	재고2,640	20V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SK36AHM2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고3,888	60V	3A	720mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
MUR240RLG	ON Semiconductor	DIODE GEN PURP 400V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고204,384	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C
UPR20E3/TR7	Microsemi Corporation	DIODE GEN PURP 200V 2A POWERMITE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-216AA	재고7,072	200V	2A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
DB3X207K0L	Panasonic Electronic Components	DIODE GEN PURP 20V 1A MINI3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12ns Current - Reverse Leakage @ Vr: 1.5mA @ 6V Capacitance @ Vr, F: 43pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G3-B Operating Temperature - Junction: 125°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,688	20V	1A	400mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	12ns	1.5mA @ 6V	43pF @ 10V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G3-B	125°C (Max)
VS-HFA15TB60-1-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 15A TO220-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고2,361	600 V	15A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 600 V	-	Through Hole	TO-220-3	TO-220-3	-55°C ~ 150°C
SIDC38D60C8X1SA1	Infineon Technologies	DIODE GEN PURP 600V 150A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	600 V	150A	1.9 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 150°C
SK110-LTP-HF	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	100 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SGLW	Taiwan Semiconductor Corporation	DIODE GP 400V 800MA SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	400 V	800mA	1.1 V @ 800 mA	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	7pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
LSIC2SD065D08A	Littelfuse Inc.	DIODE SIL CARB 650V 8A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 23 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -	패키지: -	Request a Quote	650 V	8A	1.5 V @ 23 A	No Recovery Time > 500mA (Io)	0 ns	-	-	Through Hole	TO-220-2	TO-220AC	-
SK1010C	MDD	DIODE SCHOTTKY 100V 10A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 100 V Capacitance @ Vr, F: 500pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	100 V	10A	850 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	500pF @ 4V, 1MHz	Surface Mount	-	-	-
TSSE3H45H	Taiwan Semiconductor Corporation	3A, 45V, TRENCH SCHOTTKY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	45 V	3A	570 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
S1MSP1M-7	Diodes Incorporated	DIODE GP 1KV 1A POWERDI123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI®123 Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고8,175	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	10 µA @ 1000 V	2.8pF @ 4V, 1MHz	Surface Mount	POWERDI®123	PowerDI™ 123	-55°C ~ 150°C
JANTX1N6875UTK2-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MBR745-BP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: 400pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	45 V	7.5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	400pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
BAS40WQ-13-F	Diodes Incorporated	DIODE SCHOT 40V 200MA SOT323 10K Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 200 nA @ 30 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	재고30,000	40 V	200mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	200 nA @ 30 V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 125°C
SRAS20100H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 20A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	100 V	20A	920 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
5-1616379-9	TE Connectivity Aerospace, Defense and Marine	60106003=DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SK32AH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	20 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BASH21MX2WT5G	onsemi	100V & 200V SW DIODE IN X2DFNW2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Supplier Device Package: 2-X2DFNW (1x0.6) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	250 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	3pF @ 0V, 1MHz	Surface Mount, Wettable Flank	2-XDFN	2-X2DFNW (1x0.6)	-55°C ~ 175°C

A451PM

Powerex Inc.

DIODE MODULE 1.6KV 2500A DO200AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 2500A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 5000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AC, K-PUK
Supplier Device Package: DO-200AC, K-PUK
Operating Temperature - Junction: -

패키지: DO-200AC, K-PUK

재고6,128

1600V

2500A

1.4V @ 5000A

Standard Recovery >500ns, > 200mA (Io)

-

50mA @ 1600V

-

Chassis Mount

DO-200AC, K-PUK

-

1N5831R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 35V DO4

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고7,200

35V

25A

580mV @ 25A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 20V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-55°C ~ 150°C

1N6545

Microsemi Corporation

DIODE RECT ULT FAST REC A-PKG

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고3,456

-

1N486BUR

Microsemi Corporation

DIODE RECT STD RECOVERY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고2,928

-

VS-8EWF02STR-M3

Vishay Semiconductor Diodes Division

DIODE FAST RECOVERY 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,184

200V

8A

1.2V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

55ns

100µA @ 200V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

SSL32HR7G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 410mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AB, SMC

재고6,864

20V

3A

410mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 125°C

SDT8A100P5-13

Diodes Incorporated

SCHOTTKY RECTIFIER PDI5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -55°C ~ 150°C

패키지: PowerDI? 5

재고5,600

100V

8A

700mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

PowerDI? 5

-55°C ~ 150°C

UG4A-M3/73

Vishay Semiconductor Diodes Division

DIODE 4A 50V 20NS DO-201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고4,912

50V

4A

950mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 50V

20pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SR302HR0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-201AD, Axial

재고2,640

20V

3A

550mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

SK36AHM2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고3,888

60V

3A

720mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 60V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

MUR240RLG

ON Semiconductor

DIODE GEN PURP 400V 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고204,384

400V

2A

1.3V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

65ns

5µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

Axial

-65°C ~ 175°C

UPR20E3/TR7

Microsemi Corporation

DIODE GEN PURP 200V 2A POWERMITE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-216AA

재고7,072

200V

2A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 200V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 150°C

DB3X207K0L

Panasonic Electronic Components

DIODE GEN PURP 20V 1A MINI3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12ns
Current - Reverse Leakage @ Vr: 1.5mA @ 6V
Capacitance @ Vr, F: 43pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B
Operating Temperature - Junction: 125°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,688

20V

1A

400mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

12ns

1.5mA @ 6V

43pF @ 10V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G3-B

125°C (Max)

VS-HFA15TB60-1-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A TO220-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고2,361

600 V

15A

2 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

10 µA @ 600 V

-

Through Hole

TO-220-3

-55°C ~ 150°C

SIDC38D60C8X1SA1

Infineon Technologies

DIODE GEN PURP 600V 150A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

600 V

150A

1.9 V @ 150 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

-40°C ~ 150°C

SK110-LTP-HF

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

100 V

1A

850 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 100 V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

SGLW

Taiwan Semiconductor Corporation

DIODE GP 400V 800MA SOD123W

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

400 V

800mA

1.1 V @ 800 mA

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

7pF @ 4V, 1MHz

Surface Mount

SOD-123W

-55°C ~ 150°C

LSIC2SD065D08A

Littelfuse Inc.

DIODE SIL CARB 650V 8A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 23 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -

패키지: -

Request a Quote

650 V

8A

1.5 V @ 23 A

No Recovery Time > 500mA (Io)

0 ns

-

Through Hole

TO-220-2

TO-220AC

-

SK1010C

MDD

DIODE SCHOTTKY 100V 10A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

100 V

10A

850 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 100 V

500pF @ 4V, 1MHz

Surface Mount

-

TSSE3H45H

Taiwan Semiconductor Corporation

3A, 45V, TRENCH SCHOTTKY

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

45 V

3A

570 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 45 V

-

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

S1MSP1M-7

Diodes Incorporated

DIODE GP 1KV 1A POWERDI123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고8,175

1000 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.2 µs

10 µA @ 1000 V

2.8pF @ 4V, 1MHz

Surface Mount

POWERDI®123

PowerDI™ 123

-55°C ~ 150°C

JANTX1N6875UTK2-TR

Microchip Technology

POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

MBR745-BP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

45 V

7.5A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 45 V

400pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

BAS40WQ-13-F

Diodes Incorporated

DIODE SCHOT 40V 200MA SOT323 10K

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

재고30,000

40 V

200mA

1 V @ 40 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

200 nA @ 30 V

5pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

-55°C ~ 125°C

SRAS20100H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 20A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

100 V

20A

920 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

5-1616379-9

TE Connectivity Aerospace, Defense and Marine

60106003=DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

SK32AH

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

20 V

3A

550 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 20 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

BASH21MX2WT5G

onsemi

100V & 200V SW DIODE IN X2DFNW2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

250 V

200mA

1.25 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 200 V

3pF @ 0V, 1MHz

Surface Mount, Wettable Flank

2-XDFN

2-X2DFNW (1x0.6)

-55°C ~ 175°C