페이지 1116 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP10JHM3/73	Vishay Semiconductor Diodes Division	DIODE SW 1A 600V 250NS DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고7,824	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
MBRB1035HE3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,160	35V	10A	840mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
20ETF06FP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 20A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220AC Full Pack Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-220-2 Full Pack	재고7,104	600V	20A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220AC Full Pack	-40°C ~ 150°C
MBR760HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 7.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고7,888	60V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SS8P3LHM3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 570mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: 330pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고3,488	30V	8A	570mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	330pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
FR305G A0G	TSC America Inc.	DIODE, FAST, 3A, 600V, 250NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고2,880	600V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
BYD33MGPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고2,592	1000V	1A	-	Standard Recovery >500ns, > 200mA (Io)	300ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SE20PBHM3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1.6A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 13pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-220AA	재고7,616	100V	1.6A (DC)	1.05V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.2µs	5µA @ 100V	13pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
HER158G R0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1.5A, 100 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고7,104	-	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
BYG23M M2G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1.5A, 100 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65ns Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고5,200	-	1.5A	1.7V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	1µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
MMBD6050-HE3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 70V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고3,392	70V	200mA	1.1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C (Max)
ZLLS410TA	Diodes Incorporated	DIODE SCHOTTKY 10V 570MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 570mA (DC) Voltage - Forward (Vf) (Max) @ If: 380mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 6µA @ 10V Capacitance @ Vr, F: 26pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -	패키지: SC-76, SOD-323	재고121,776	10V	570mA (DC)	380mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	3ns	6µA @ 10V	26pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-
STPSC6H12B-TR1	STMicroelectronics	DIODE SCHOTTKY 1.2KV 6A DPAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 400µA @ 1200V Capacitance @ Vr, F: 330pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,152	1200V	6A	1.9V @ 6A	No Recovery Time > 500mA (Io)	0ns	400µA @ 1200V	330pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-40°C ~ 175°C
S2BA-13-F	Diodes Incorporated	DIODE GEN PURP 100V 1.5A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고240,000	100V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
1N2442	Solid State Inc.	DIODE GEN PURP 350V 150A DO8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 350 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 350 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	350 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 350 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C
STPST2H100ZF	STMicroelectronics	100 V, 2 A POWER SCHOTTKY TRENCH Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 805 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.7 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: 175°C	패키지: -	재고25,662	100 V	2A	805 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.7 µA @ 100 V	-	Surface Mount	SOD-123F	SOD-123F	175°C
SIDC14D60C8X1SA2	Infineon Technologies	DIODE GEN PURP 600V 50A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	600 V	50A	1.9 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 175°C
V8PL63HM3-I	Vishay General Semiconductor - Diodes Division	8A, 60V, SMPC TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 180 µA @ 60 V Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고19,488	60 V	8A	580 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	180 µA @ 60 V	1400pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
HER607-AP	Micro Commercial Co	DIODE GEN PURP 800V 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	800 V	6A	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 800 V	65pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
1N1192R	Solid State Inc.	DIODE GEN PURP REV 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	-	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
S1G-TP	Micro Commercial Co	DIODE GP 400V 1A DO214AA HSMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA, HSMB Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 400 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA, HSMB	-55°C ~ 150°C
DSEI12-12AZ-TUB	IXYS	DIODE GEN PURP 1.2KV 11A TO263HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 11A Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Capacitance @ Vr, F: 6pF @ 600V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고138	1200 V	11A	2.6 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	250 µA @ 1200 V	6pF @ 600V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263HV	-40°C ~ 150°C
VS-45APF06L-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 45A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 45 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	600 V	45A	1.31 V @ 45 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	Through Hole	TO-247-3	TO-247AD	-40°C ~ 150°C
SR104-TP	Micro Commercial Co	DIODE SCHOTTKY 1A DO-41 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-
SK520C	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고6,897	200 V	5A	950 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 200 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
FR501-TP	Micro Commercial Co	DIODE GEN PURP 50V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	50 V	5A	1.35 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 50 V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N6822R	Microchip Technology	DIODE SCHOTTKY 45V 150A THINKEY3 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	45 V	150A	760 mV @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	Surface Mount	ThinKey™3	ThinKey™3	-55°C ~ 150°C
SIDC09D60F6X1SA2	Infineon Technologies	DIODE GP 600V 30A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	600 V	30A	1.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C

RGP10JHM3/73

Vishay Semiconductor Diodes Division

DIODE SW 1A 600V 250NS DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고7,824

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

MBRB1035HE3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,160

35V

10A

840mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

20ETF06FP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 20A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-2 Full Pack

재고7,104

600V

20A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

160ns

100µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220AC Full Pack

-40°C ~ 150°C

MBR760HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 7.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고7,888

60V

7.5A

750mV @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SS8P3LHM3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 8A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고3,488

30V

8A

570mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

330pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

FR305G A0G

TSC America Inc.

DIODE, FAST, 3A, 600V, 250NS, DO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고2,880

600V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

BYD33MGPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고2,592

1000V

1A

-

Standard Recovery >500ns, > 200mA (Io)

300ns

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

SE20PBHM3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.6A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-220AA

재고7,616

100V

1.6A (DC)

1.05V @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.2µs

5µA @ 100V

13pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

HER158G R0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1.5A, 100

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고7,104

-

1.5A

1V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 1000V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

BYG23M M2G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1.5A, 100

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65ns
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고5,200

-

1.5A

1.7V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

65ns

1µA @ 1000V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

MMBD6050-HE3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 70V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고3,392

70V

200mA

1.1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C (Max)

ZLLS410TA

Diodes Incorporated

DIODE SCHOTTKY 10V 570MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 570mA (DC)
Voltage - Forward (Vf) (Max) @ If: 380mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 6µA @ 10V
Capacitance @ Vr, F: 26pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -

패키지: SC-76, SOD-323

재고121,776

10V

570mA (DC)

380mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

3ns

6µA @ 10V

26pF @ 10V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-

STPSC6H12B-TR1

STMicroelectronics

DIODE SCHOTTKY 1.2KV 6A DPAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,152

1200V

6A

1.9V @ 6A

No Recovery Time > 500mA (Io)

0ns

400µA @ 1200V

330pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

-40°C ~ 175°C

S2BA-13-F

Diodes Incorporated

DIODE GEN PURP 100V 1.5A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고240,000

100V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 100V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

1N2442

Solid State Inc.

DIODE GEN PURP 350V 150A DO8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 350 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 350 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

350 V

150A

1.1 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 350 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-8

-65°C ~ 200°C

STPST2H100ZF

STMicroelectronics

100 V, 2 A POWER SCHOTTKY TRENCH

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 805 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.7 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 175°C

패키지: -

재고25,662

100 V

2A

805 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2.7 µA @ 100 V

-

Surface Mount

SOD-123F

175°C

SIDC14D60C8X1SA2

Infineon Technologies

DIODE GEN PURP 600V 50A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

600 V

50A

1.9 V @ 50 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

-40°C ~ 175°C

V8PL63HM3-I

Vishay General Semiconductor - Diodes Division

8A, 60V, SMPC TRENCH SKY RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고19,488

60 V

8A

580 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

180 µA @ 60 V

1400pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

HER607-AP

Micro Commercial Co

DIODE GEN PURP 800V 6A R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

800 V

6A

1.7 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 800 V

65pF @ 4V, 1MHz

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

1N1192R

Solid State Inc.

DIODE GEN PURP REV 12A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

-

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

S1G-TP

Micro Commercial Co

DIODE GP 400V 1A DO214AA HSMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA, HSMB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

400 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

5 µA @ 400 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA, HSMB

-55°C ~ 150°C

DSEI12-12AZ-TUB

IXYS

DIODE GEN PURP 1.2KV 11A TO263HV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 11A
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고138

1200 V

11A

2.6 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

250 µA @ 1200 V

6pF @ 600V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263HV

-40°C ~ 150°C

VS-45APF06L-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 45A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 45A
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 45 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

600 V

45A

1.31 V @ 45 A

Fast Recovery =< 500ns, > 200mA (Io)

180 ns

100 µA @ 600 V

-

Through Hole

TO-247-3

TO-247AD

-40°C ~ 150°C

SR104-TP

Micro Commercial Co

DIODE SCHOTTKY 1A DO-41

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-

SK520C

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 5A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고6,897

200 V

5A

950 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 200 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

FR501-TP

Micro Commercial Co

DIODE GEN PURP 50V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

50 V

5A

1.35 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

10 µA @ 50 V

65pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

1N6822R

Microchip Technology

DIODE SCHOTTKY 45V 150A THINKEY3

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

45 V

150A

760 mV @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 45 V

-

Surface Mount

ThinKey™3

-55°C ~ 150°C

SIDC09D60F6X1SA2

Infineon Technologies

DIODE GP 600V 30A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

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600 V

30A

1.6 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C