페이지 1120 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 단일

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부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GI854-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 28pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -50°C ~ 150°C
패키지: DO-201AD, Axial
재고2,528
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
10µA @ 400V
28pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
S3MHE3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AB, SMC
재고2,688
1000V
3A
1.15V @ 2.5A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
10µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
hot RM400HA-24S
Powerex Inc.

DIODE MODULE 1.2KV 400A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 400A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 30mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
패키지: Module
재고4,592
1200V
400A
2V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
30mA @ 1200V
-
Chassis Mount
Module
Module
-
VS-50WQ06FNTRHM3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5.5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 60V
  • Capacitance @ Vr, F: 360pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,232
60V
5.5A
570mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 60V
360pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
EK 04W
Sanken

DIODE SCHOTTKY 40V 1A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: Axial
재고7,520
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 40V
-
Through Hole
Axial
-
-40°C ~ 150°C
SR502HB0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: DO-201AD, Axial
재고3,856
50V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
VS-MBRS140-M3/5BT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Capacitance @ Vr, F: 80pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AA, SMB
재고5,360
40V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
80pF @ 5V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
CDSER4148
Comchip Technology

DIODE GEN PURP 75V 150MA 0503

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 2.5µA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0503 (1308 Metric)
  • Supplier Device Package: 0503/SOD-723F
  • Operating Temperature - Junction: 125°C (Max)
패키지: 0503 (1308 Metric)
재고4,560
75V
150mA
1V @ 50mA
Small Signal =< 200mA (Io), Any Speed
4ns
2.5µA @ 75V
4pF @ 0V, 1MHz
Surface Mount
0503 (1308 Metric)
0503/SOD-723F
125°C (Max)
S8JC R7G
TSC America Inc.

DIODE, 8A, 600V, DO-214AB (SMC)

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 48pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AB, SMC
재고3,040
600V
8A
985mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 600V
48pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
hot UPS840/TR13
Microsemi Corporation

DIODE SCHOTTKY 40V 8A POWERMITE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: DO-216AA
재고600,000
40V
8A
450mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 40V
-
Surface Mount
DO-216AA
Powermite
-55°C ~ 125°C
PDS360Q-13
Diodes Incorporated

DIODE SCHOTTKY 60V 3A POWERDI5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 60V
  • Capacitance @ Vr, F: 38pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI?5
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: PowerDI? 5
재고2,944
60V
3A
620mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 60V
38pF @ 10V, 1MHz
Surface Mount
PowerDI? 5
PowerDI?5
-55°C ~ 150°C
hot ES2C-13-F
Diodes Incorporated

DIODE GEN PURP 150V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AA, SMB
재고696,000
150V
2A
920mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
CDBA3100-G
Comchip Technology

DIODE SCHOTTKY 100V 3A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AC, SMA
재고51,474
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
hot 1N5062GP-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-204AC, DO-15, Axial
재고97,464
800V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 175°C
1N2024R
Solid State Inc.

DIODE GEN PURP REV 350V 40A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 350 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 350 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 200°C
패키지: -
Request a Quote
350 V
40A
1.19 V @ 90 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 350 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 200°C
ER2JHE3-LTP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
600 V
2A
1.7 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
US3AC-HF
Comchip Technology

DIODE GEN PURP 50V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
50 V
3A
1 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 50 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SS14LS
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A SOD123HE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 40 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고185,508
40 V
1A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 µA @ 40 V
80pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
CD6640
Microchip Technology

SIGNAL/COMPUTER DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MMSD4148-D87Z
onsemi

DIODE GEN PURP 100V 200MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 75 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
Request a Quote
100 V
200mA
1 V @ 10 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
5 µA @ 75 V
4pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
150°C (Max)
ERT2GF_R1_00001
Panjit International Inc.

DIODE GEN PURP 400V 2A SMBF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBF
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고4,305
400 V
2A
1.25 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 400 V
25pF @ 4V, 1MHz
Surface Mount
DO-221AA, SMB Flat Leads
SMBF
-55°C ~ 150°C
PCFFS20120AF
onsemi

DIODE SIL CARBIDE 1.2KV 20A DIE

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
Request a Quote
1200 V
20A
1.723 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1200 V
-
Surface Mount
Die
Die
175°C (Max)
FX2000D
Diotec Semiconductor

DIODE GEN PURP 200V 20A P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 940 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 150°C
패키지: -
Request a Quote
200 V
20A
940 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
5 µA @ 200 V
-
Through Hole
P600, Axial
P600
-50°C ~ 150°C
NTE587
NTE Electronics, Inc

DIODE GEN PURP 200V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 53pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
200 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 200 V
53pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
RGP15D
NTE Electronics, Inc

DIODE GEN PURP 200V 1.5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -
패키지: -
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200 V
1.5A
1.3 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 200 V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-
FFSB10120A-F085
onsemi

DIODE SIL CARB 1.2KV 21A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 21A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: 612pF @ 1V, 100kHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고1,725
1200 V
21A
1.75 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1200 V
612pF @ 1V, 100kHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
US2BWF-HF
Comchip Technology

DIODE GEN PURP 100V 2A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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100 V
2A
1 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 100 V
-
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 150°C
SR215H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 2A DO204AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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150 V
2A
950 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 150 V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C