페이지 1138 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CR5F-080 BK	Central Semiconductor Corp	DIODE GEN PURP 800V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AD, Axial	재고6,352	800V	5A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	-	Through Hole	DO-201AD, Axial	DO-201	-65°C ~ 150°C
VS-8TQ100GPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 8A TO-220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 280µA @ 100V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고5,760	100V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	280µA @ 100V	500pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SS5P6HM3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 5A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고3,536	60V	5A	690mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	200pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
R5021210RSWA	Powerex Inc.	DIODE GEN PURP 1.2KV 100A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 45mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 150°C	패키지: DO-205AA, DO-8, Stud	재고7,360	1200V	100A	2.7V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	45mA @ 1200V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 150°C
1N6081	Semtech Corporation	D MET 5A SFST 150V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고3,696	-	-	-	-	-	-	-	-	-	-	-
PDS1040Q-13	Diodes Incorporated	DIODE SCHOTTKY 40V 10A POWERDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -65°C ~ 150°C	패키지: PowerDI? 5	재고2,048	40V	10A	510mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 40V	-	Surface Mount	PowerDI? 5	PowerDI?5	-65°C ~ 150°C
CDBA5150-G	Comchip Technology	DIODE SCHOTTKY 150V 5A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 870mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 150V Capacitance @ Vr, F: 380pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 175°C	패키지: DO-214AC, SMA	재고5,024	150V	5A (DC)	870mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 150V	380pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 175°C
S4PM-M3/87A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 4A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고7,776	1000V	4A	1.1V @ 4A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
SSL13 R3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 390mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AC, SMA	재고7,008	30V	1A	390mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
S3KB M4G	TSC America Inc.	DIODE, 3A, 800V, DO-214AA (SMB) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고3,408	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS210L RQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고7,216	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
UES1102SM	Microsemi Corporation	DIODE GEN PURP 100V 2.5A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: 150°C (Max)	패키지: SQ-MELF, A	재고7,392	100V	2.5A	-	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 100V	3.5pF @ 6V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	150°C (Max)
1N5397-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1.5A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고924,000	600V	1.5A	1.4V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
VS-15TQ060STRLPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 15A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 620mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 60V Capacitance @ Vr, F: 720pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고21,420	60V	15A	620mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 60V	720pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
PMEG045V050EPDZ	Nexperia USA Inc.	DIODE SCHOTTKY 45V 5A CFP15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 490mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 19ns Current - Reverse Leakage @ Vr: 300µA @ 45V Capacitance @ Vr, F: 580pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max)	패키지: 3-SMD, Flat Leads	재고31,644	45V	5A	490mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	19ns	300µA @ 45V	580pF @ 1V, 1MHz	Surface Mount	3-SMD, Flat Leads	CFP15	175°C (Max)
STPS745D	STMicroelectronics	DIODE SCHOTTKY 45V 7.5A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고349,044	45V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
1N5817	Fairchild/ON Semiconductor	DIODE SCHOTTKY 20V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-204AL, DO-41, Axial	재고8,897,652	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
PCDP0465G1_T0_00001	Panjit International Inc.	DIODE SIL CARB 650V 4A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 146pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고5,988	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	146pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SS320ALH	Taiwan Semiconductor Corporation	3A, 200V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 54pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 200 V	54pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
NRVTS360ETFSTAG	onsemi	DIODE SCHOTTKY 60V 3A 8WDFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	재고9,000	60 V	3A	900 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	12 µA @ 60 V	-	Surface Mount	8-PowerWDFN	8-WDFN (3.3x3.3)	-65°C ~ 175°C
HSM123JTL-E	Renesas Electronics Corporation	DIODE FOR HIGH SPEED SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CD3595	Microchip Technology	SIGNAL/COMPUTER DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
S4D10120E	SMC Diode Solutions	DIODE SIL CARBIDE 1.2KV 10A DPAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 30 µA @ 1200 V Capacitance @ Vr, F: 772pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고3,858	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	772pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 175°C
V3PM15HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 1.8A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1.8A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 150 V Capacitance @ Vr, F: 180pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	재고10,302	150 V	1.8A	760 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 150 V	180pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-40°C ~ 175°C
SS1H20LW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 1A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고76,410	200 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 nA @ 200 V	-	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 175°C
VS-A5PH3006LHN3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 30A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 46 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	30A	1.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	46 ns	20 µA @ 600 V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
JANTXV1N3172R	Microchip Technology	DIODE GP 800V 300A DO205AB DO9 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	800 V	300A	1.55 V @ 940 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 800 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C
1F6G-AP	Micro Commercial Co	DIODE GEN PURP 800V 1A R-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-1, Axial Supplier Device Package: R-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	800 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	12pF @ 4V, 1MHz	Through Hole	R-1, Axial	R-1	-55°C ~ 150°C

CR5F-080 BK

Central Semiconductor Corp

DIODE GEN PURP 800V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

재고6,352

800V

5A

1.3V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

-

Through Hole

DO-201AD, Axial

DO-201

-65°C ~ 150°C

VS-8TQ100GPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A TO-220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 280µA @ 100V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고5,760

100V

8A

720mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

280µA @ 100V

500pF @ 5V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

SS5P6HM3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 60V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고3,536

60V

5A

690mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 60V

200pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

R5021210RSWA

Powerex Inc.

DIODE GEN PURP 1.2KV 100A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 45mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: DO-205AA, DO-8, Stud

재고7,360

1200V

100A

2.7V @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

45mA @ 1200V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-40°C ~ 150°C

1N6081

Semtech Corporation

D MET 5A SFST 150V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고3,696

-

PDS1040Q-13

Diodes Incorporated

DIODE SCHOTTKY 40V 10A POWERDI5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 700µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -65°C ~ 150°C

패키지: PowerDI? 5

재고2,048

40V

10A

510mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

700µA @ 40V

-

Surface Mount

PowerDI? 5

PowerDI?5

-65°C ~ 150°C

CDBA5150-G

Comchip Technology

DIODE SCHOTTKY 150V 5A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 870mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 150V
Capacitance @ Vr, F: 380pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 175°C

패키지: DO-214AC, SMA

재고5,024

150V

5A (DC)

870mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 150V

380pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-50°C ~ 175°C

S4PM-M3/87A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 4A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고7,776

1000V

4A

1.1V @ 4A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

10µA @ 1000V

30pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

SSL13 R3G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 390mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AC, SMA

재고7,008

30V

1A

390mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

S3KB M4G

TSC America Inc.

DIODE, 3A, 800V, DO-214AA (SMB)

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고3,408

800V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 800V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SS210L RQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고7,216

100V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

UES1102SM

Microsemi Corporation

DIODE GEN PURP 100V 2.5A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: 150°C (Max)

패키지: SQ-MELF, A

재고7,392

100V

2.5A

-

Fast Recovery =< 500ns, > 200mA (Io)

25ns

2µA @ 100V

3.5pF @ 6V, 1MHz

Surface Mount

SQ-MELF, A

A-MELF

150°C (Max)

1N5397-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고924,000

600V

1.5A

1.4V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-50°C ~ 150°C

VS-15TQ060STRLPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 15A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 620mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 60V
Capacitance @ Vr, F: 720pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고21,420

60V

15A

620mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 60V

720pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

PMEG045V050EPDZ

Nexperia USA Inc.

DIODE SCHOTTKY 45V 5A CFP15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19ns
Current - Reverse Leakage @ Vr: 300µA @ 45V
Capacitance @ Vr, F: 580pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)

패키지: 3-SMD, Flat Leads

재고31,644

45V

5A

490mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

19ns

300µA @ 45V

580pF @ 1V, 1MHz

Surface Mount

3-SMD, Flat Leads

CFP15

175°C (Max)

STPS745D

STMicroelectronics

DIODE SCHOTTKY 45V 7.5A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고349,044

45V

7.5A

840mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 45V

-

Through Hole

TO-220-2

TO-220AC

175°C (Max)

1N5817

Fairchild/ON Semiconductor

DIODE SCHOTTKY 20V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-204AL, DO-41, Axial

재고8,897,652

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

110pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 125°C

PCDP0465G1_T0_00001

Panjit International Inc.

DIODE SIL CARB 650V 4A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 146pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고5,988

650 V

4A

1.7 V @ 4 A

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 650 V

146pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

SS320ALH

Taiwan Semiconductor Corporation

3A, 200V, SCHOTTKY RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 200 V

54pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

Thin SMA

-55°C ~ 150°C

NRVTS360ETFSTAG

onsemi

DIODE SCHOTTKY 60V 3A 8WDFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

재고9,000

60 V

3A

900 mV @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

-

12 µA @ 60 V

-

Surface Mount

8-PowerWDFN

8-WDFN (3.3x3.3)

-65°C ~ 175°C

HSM123JTL-E

Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

CD3595

Microchip Technology

SIGNAL/COMPUTER DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

S4D10120E

SMC Diode Solutions

DIODE SIL CARBIDE 1.2KV 10A DPAK

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Capacitance @ Vr, F: 772pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고3,858

1200 V

10A

1.8 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

30 µA @ 1200 V

772pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-55°C ~ 175°C

V3PM15HM3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 1.8A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1.8A
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

재고10,302

150 V

1.8A

760 mV @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 150 V

180pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-40°C ~ 175°C

SS1H20LW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 1A SOD123W

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고76,410

200 V

1A

850 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 nA @ 200 V

-

Surface Mount

SOD-123W

-55°C ~ 175°C

VS-A5PH3006LHN3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

600 V

30A

1.6 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

46 ns

20 µA @ 600 V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 175°C

JANTXV1N3172R

Microchip Technology

DIODE GP 800V 300A DO205AB DO9

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

800 V

300A

1.55 V @ 940 A

Standard Recovery >500ns, > 200mA (Io)

-

10 mA @ 800 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-205AB (DO-9)

-65°C ~ 200°C

1F6G-AP

Micro Commercial Co

DIODE GEN PURP 800V 1A R-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-1, Axial
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

800 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 800 V

12pF @ 4V, 1MHz

Through Hole

R-1, Axial

R-1

-55°C ~ 150°C