페이지 1188 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS22A20	Fairchild/ON Semiconductor	DIODE SCHOTTKY 20V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-214AA, SMB	재고7,440	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 125°C
S2KW16C-4P	Semtech Corporation	DIODE GEN PURP 16KV 6A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 16000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 16V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 2µA @ 16000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	패키지: Module	재고5,856	16000V	6A	16V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	2µs	2µA @ 16000V	-	Chassis Mount	Module	-	-55°C ~ 150°C
S150J	GeneSiC Semiconductor	DIODE GEN PURP 600V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-205AA, DO-8, Stud	재고6,160	600V	150A	1.2V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
MBRF1090 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 10A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack	재고7,056	90V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SF63G R0G	TSC America Inc.	DIODE, SUPER FAST, 6A, 150V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고7,712	150V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
EGL34A-E3/83	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 500MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AA (Glass)	재고7,248	50V	500mA	1.25V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
S3JHM6G	TSC America Inc.	DIODE, 3A, 600V, AEC-Q101, DO-21 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고3,552	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
SS1H9-E3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 175°C (Max)	패키지: DO-214AC, SMA	재고6,368	90V	1A	770mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	175°C (Max)
HS1ML MHG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 1000V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고3,280	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SD101BWS-G3-08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 150MW 50V SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 30mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 40V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	패키지: SC-76, SOD-323	재고5,232	50V	30mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 40V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C
1N4148_T26A	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AH, DO-35, Axial	재고6,976	100V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
STPSC4H065B-TR	STMicroelectronics	DIODE SCHOTTKY 650V 4A DPAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: 200pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: -40°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,048	650V	4A	1.75V @ 4A	No Recovery Time > 500mA (Io)	0ns	40µA @ 650V	200pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	-40°C ~ 175°C
EL 1V1	Sanken	DIODE GEN PURP 400V 1.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고3,264	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
CZSH5-40 TR	Central Semiconductor Corp	DIODE SCHOTTKY 40V 5A SOT223 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223 Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-261-4, TO-261AA	재고28,422	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 40V	-	Surface Mount	TO-261-4, TO-261AA	SOT-223	-65°C ~ 150°C
SS1200-LTP	Micro Commercial Co	DIODE SCHOTTKY 200V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C	패키지: DO-214AC, SMA	재고105,594	200V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 200V	110pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 150°C
1N2436	Solid State Inc.	DIODE GEN PURP 50V 150A DO8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	50 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 50 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C
SEG10FGHM3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 1A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고28,800	400 V	1A	1.1 V @ 700 mA	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	5 µA @ 400 V	7.3pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
JANS1N6638U-TR	Microchip Technology	DIODE GEN PURP 125V 300MA D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.5 ns Current - Reverse Leakage @ Vr: 500 nA @ 150 V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	125 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5 ns	500 nA @ 150 V	2.5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 175°C
RS2M_HF	Diodes Incorporated	FAST RECOVERY RECTIFIER SMB T&R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1 kV Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1000 V	1.5A	1.3 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1 kV	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
SD540S_S2_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 5A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	40 V	5A	550 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-55°C ~ 150°C
SE80PWTLGHM3-I	Vishay	8A, 400V, STD RECT, SLIMDPAK 2L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 280 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	400 V	8A	960 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	280 ns	5 µA @ 400 V	70pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-55°C ~ 175°C
CDS914UR-TR	Microchip Technology	SIGNAL OR COMPUTER DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CD214B-FS3D	Bourns Inc.	DIODE GEN PURP 200V 3A 2SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	200 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	19pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2-SMD	-65°C ~ 175°C
SIMLR3G	Taiwan Semiconductor Corporation	GLASS PASSIVATED SMD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
FR203GP-AP	Micro Commercial Co	DIODE GEN PURP 200V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 200 V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
HT15G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고15,000	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SCS302AJTLL	Rohm Semiconductor	DIODE SIL CARB 650V 2.15A LPTL Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 2.15A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V Capacitance @ Vr, F: 110pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max)	패키지: -	재고1,497	650 V	2.15A	1.5 V @ 2.15 A	No Recovery Time > 500mA (Io)	0 ns	10.8 µA @ 650 V	110pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	LPTL	175°C (Max)
1N1202	Solid State Inc.	DIODE GEN PURP 200V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	200 V	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C

SS22A20

Fairchild/ON Semiconductor

DIODE SCHOTTKY 20V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-214AA, SMB

재고7,440

20V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 20V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 125°C

S2KW16C-4P

Semtech Corporation

DIODE GEN PURP 16KV 6A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 16000V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 16V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 2µA @ 16000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Module

재고5,856

16000V

6A

16V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

2µs

2µA @ 16000V

-

Chassis Mount

Module

-

-55°C ~ 150°C

S150J

GeneSiC Semiconductor

DIODE GEN PURP 600V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-205AA, DO-8, Stud

재고6,160

600V

150A

1.2V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

MBRF1090 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack

재고7,056

90V

10A

850mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

SF63G R0G

TSC America Inc.

DIODE, SUPER FAST, 6A, 150V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고7,712

150V

6A

975mV @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 150V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

EGL34A-E3/83

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 500MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AA (Glass)

재고7,248

50V

500mA

1.25V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

7pF @ 4V, 1MHz

Surface Mount

DO-213AA (Glass)

DO-213AA (GL34)

-65°C ~ 175°C

S3JHM6G

TSC America Inc.

DIODE, 3A, 600V, AEC-Q101, DO-21

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고3,552

600V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

5µA @ 600V

30pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

SS1H9-E3/5AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)

패키지: DO-214AC, SMA

재고6,368

90V

1A

770mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1µA @ 90V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

175°C (Max)

HS1ML MHG

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 1000V

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고3,280

-

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 1000V

15pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

SD101BWS-G3-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150MW 50V SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 30mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 200nA @ 40V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SC-76, SOD-323

재고5,232

50V

30mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

1ns

200nA @ 40V

2pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 125°C

1N4148_T26A

Fairchild/ON Semiconductor

DIODE GEN PURP 100V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AH, DO-35, Axial

재고6,976

100V

200mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

STPSC4H065B-TR

STMicroelectronics

DIODE SCHOTTKY 650V 4A DPAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 40µA @ 650V
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: -40°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,048

650V

4A

1.75V @ 4A

No Recovery Time > 500mA (Io)

0ns

40µA @ 650V

200pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

-40°C ~ 175°C

EL 1V1

Sanken

DIODE GEN PURP 400V 1.5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고3,264

400V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

CZSH5-40 TR

Central Semiconductor Corp

DIODE SCHOTTKY 40V 5A SOT223

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-261-4, TO-261AA

재고28,422

40V

5A

550mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 40V

-

Surface Mount

TO-261-4, TO-261AA

SOT-223

-65°C ~ 150°C

SS1200-LTP

Micro Commercial Co

DIODE SCHOTTKY 200V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: DO-214AC, SMA

재고105,594

200V

1A

920mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 200V

110pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-50°C ~ 150°C

1N2436

Solid State Inc.

DIODE GEN PURP 50V 150A DO8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

50 V

150A

1.1 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 50 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-8

-65°C ~ 200°C

SEG10FGHM3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 1A DO219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고28,800

400 V

1A

1.1 V @ 700 mA

Standard Recovery >500ns, > 200mA (Io)

1.2 µs

5 µA @ 400 V

7.3pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

JANS1N6638U-TR

Microchip Technology

DIODE GEN PURP 125V 300MA D-5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

125 V

300mA

1.1 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

4.5 ns

500 nA @ 150 V

2.5pF @ 0V, 1MHz

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 175°C

RS2M_HF

Diodes Incorporated

FAST RECOVERY RECTIFIER SMB T&R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1 kV
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1000 V

1.5A

1.3 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 1 kV

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C

SD540S_S2_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 5A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

40 V

5A

550 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 40 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

-55°C ~ 150°C

SE80PWTLGHM3-I

Vishay

8A, 400V, STD RECT, SLIMDPAK 2L

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

400 V

8A

960 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

280 ns

5 µA @ 400 V

70pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

SlimDPAK

-55°C ~ 175°C

CDS914UR-TR

Microchip Technology

SIGNAL OR COMPUTER DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

CD214B-FS3D

Bourns Inc.

DIODE GEN PURP 200V 3A 2SMD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

200 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

19pF @ 4V, 1MHz

Surface Mount

2-SMD, No Lead

2-SMD

-65°C ~ 175°C

SIMLR3G

Taiwan Semiconductor Corporation

GLASS PASSIVATED SMD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

FR203GP-AP

Micro Commercial Co

DIODE GEN PURP 200V 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 200 V

40pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

HT15G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A TS-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고15,000

400 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 400 V

15pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

SCS302AJTLL

Rohm Semiconductor

DIODE SIL CARB 650V 2.15A LPTL

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 2.15A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)

패키지: -

재고1,497

650 V

2.15A

1.5 V @ 2.15 A

No Recovery Time > 500mA (Io)

0 ns

10.8 µA @ 650 V

110pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

LPTL

175°C (Max)

1N1202

Solid State Inc.

DIODE GEN PURP 200V 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

200 V

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C