페이지 1201 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP02-17E-M3S/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고3,888	-	-	-	-	-	-	-	-	-	-	-
RGP10MHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고7,568	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
DSB2I40SB	IXYS	DIODE SCHOTTKY 40V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고6,368	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
UPS115U/TR13	Microsemi Corporation	DIODE SCHOTTKY 15V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 15V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-216AA	재고2,944	15V	1A	220mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 15V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
GURB5H60HE3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 5A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,784	600V	5A	1.8V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	20µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
SRAS830 MNG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 125°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,456	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 125°C
SF45GHB0G	TSC America Inc.	DIODE, SUPER FAST, 4A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고6,448	300V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
BYV37-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 2A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-57, Axial	재고600,000	800V	2A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 800V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
MBR860STR	SMC Diode Solutions	DIODE SCHOTTKY 60V 8A TO277B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 650mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277B Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고4,752	60V	8A	650mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	400pF @ 5V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 150°C
SS13LHRHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-219AB	재고6,048	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
NSVBAS21HT3G	ON Semiconductor	DIODE GEN PURP 250V 200MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	패키지: SC-76, SOD-323	재고4,816	250V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
MBRS20H100CT MNG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 20A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 950mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,568	100V	20A	950mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 100V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 175°C
MA3XD1500L	Panasonic Electronic Components	DIODE SCHOTTKY 20V 1A MINI3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 20V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1 Operating Temperature - Junction: 125°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고108,000	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	120pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1	125°C (Max)
VS-1N1202A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-203AA, DO-4, Stud	재고7,968	200V	12A	1.35V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	2mA @ 200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 200°C
63SPB100A	SMC Diode Solutions	DIODE SCHOTTKY 100V 60A SPD-2A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 870mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: 1500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SPD-2A Supplier Device Package: SPD-2A Operating Temperature - Junction: -55°C ~ 175°C	패키지: SPD-2A	재고9,288	100V	60A	870mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	1500pF @ 5V, 1MHz	Surface Mount	SPD-2A	SPD-2A	-55°C ~ 175°C
JANTX1N6678T1	Microchip Technology	RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
UFR3270	Microchip Technology	DIODE GEN PURP 700V 30A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 700 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 15 µA @ 700 V Capacitance @ Vr, F: 100pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	700 V	30A	1.35 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	15 µA @ 700 V	100pF @ 10V, 1MHz	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
PCFA86561F	onsemi	MV7 60V SG WAFER SALES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
VS-8ESH02-M3-H	Vishay	FREDS - SMPC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	200 V	8A	980 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 200 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SK84-AQ	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	Request a Quote	40 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 150°C
PCDD0465GB_L2_00601	Panjit International Inc.	650V/4A IN TO-252AA PACKAGE SILI Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 261pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	650 V	4A	1.6 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	261pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
VS-MURB820TRL-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	재고23,985	200 V	8A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
SDS120J030H3-ISATH	Luminus Devices Inc.	DIODE 1200V-30A TO247-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 95A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 72 µA @ 1.2 kV Capacitance @ Vr, F: 2546pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2L Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	1200 V	95A	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	72 µA @ 1.2 kV	2546pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247-2L	-55°C ~ 175°C
1N6910UTK2	Microchip Technology	DIODE SCHOTTKY 15V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 15 V Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	15 V	25A	520 mV @ 25 A	No Recovery Time > 500mA (Io)	-	1.2 mA @ 15 V	2000pF @ 5V, 1MHz	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 150°C
STTH2004SW	STMicroelectronics	RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SS14HL-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 1A SOD323HL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323HL Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	재고12,843	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	45pF @ 4V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323HL	-55°C ~ 125°C
RFUH20NS4STL	Rohm Semiconductor	DIODE GEN PURP 430V 20A LPDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 430 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 430 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS Operating Temperature - Junction: 150°C	패키지: -	재고2,832	430 V	20A	1.7 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 430 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	LPDS	150°C
R714X	Microchip Technology	RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 1 mA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	400 V	15A	1.4 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	1 mA @ 400 V	-	Through Hole	TO-204AA, TO-3	TO-204AA (TO-3)	-65°C ~ 150°C

RGP02-17E-M3S/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고3,888

-

RGP10MHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고7,568

1000V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

DSB2I40SB

IXYS

DIODE SCHOTTKY 40V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고6,368

40V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

-

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

UPS115U/TR13

Microsemi Corporation

DIODE SCHOTTKY 15V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 15V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-216AA

재고2,944

15V

1A

220mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 15V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 150°C

GURB5H60HE3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,784

600V

5A

1.8V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

20µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

SRAS830 MNG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,456

30V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 30V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 125°C

SF45GHB0G

TSC America Inc.

DIODE, SUPER FAST, 4A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고6,448

300V

4A

1.3V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 300V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

BYV37-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 2A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-57, Axial

재고600,000

800V

2A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 800V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

MBR860STR

SMC Diode Solutions

DIODE SCHOTTKY 60V 8A TO277B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277B
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고4,752

60V

8A

650mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

400pF @ 5V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277B

-55°C ~ 150°C

SS13LHRHG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-219AB

재고6,048

30V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 30V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 125°C

NSVBAS21HT3G

ON Semiconductor

DIODE GEN PURP 250V 200MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SC-76, SOD-323

재고4,816

250V

200mA (DC)

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 200V

5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 150°C

MBRS20H100CT MNG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,568

100V

20A

950mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 100V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 175°C

MA3XD1500L

Panasonic Electronic Components

DIODE SCHOTTKY 20V 1A MINI3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 20V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Operating Temperature - Junction: 125°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고108,000

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 20V

120pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

125°C (Max)

VS-1N1202A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-203AA, DO-4, Stud

재고7,968

200V

12A

1.35V @ 12A

Standard Recovery >500ns, > 200mA (Io)

-

2mA @ 200V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 200°C

63SPB100A

SMC Diode Solutions

DIODE SCHOTTKY 100V 60A SPD-2A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 870mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: 1500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SPD-2A
Supplier Device Package: SPD-2A
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SPD-2A

재고9,288

100V

60A

870mV @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

1500pF @ 5V, 1MHz

Surface Mount

SPD-2A

-55°C ~ 175°C

JANTX1N6678T1

Microchip Technology

RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

UFR3270

Microchip Technology

DIODE GEN PURP 700V 30A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 700 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 15 µA @ 700 V
Capacitance @ Vr, F: 100pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

700 V

30A

1.35 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

15 µA @ 700 V

100pF @ 10V, 1MHz

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

PCFA86561F

onsemi

MV7 60V SG WAFER SALES

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

VS-8ESH02-M3-H

Vishay

FREDS - SMPC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

200 V

8A

980 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 200 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SK84-AQ

Diotec Semiconductor

IC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

Request a Quote

40 V

8A

550 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 40 V

-

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-50°C ~ 150°C

PCDD0465GB_L2_00601

Panjit International Inc.

650V/4A IN TO-252AA PACKAGE SILI

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Capacitance @ Vr, F: 261pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

650 V

4A

1.6 V @ 4 A

No Recovery Time > 500mA (Io)

0 ns

100 µA @ 650 V

261pF @ 1V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

VS-MURB820TRL-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

재고23,985

200 V

8A

975 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

SDS120J030H3-ISATH

Luminus Devices Inc.

DIODE 1200V-30A TO247-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 95A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 72 µA @ 1.2 kV
Capacitance @ Vr, F: 2546pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

1200 V

95A

1.5 V @ 30 A

No Recovery Time > 500mA (Io)

0 ns

72 µA @ 1.2 kV

2546pF @ 0V, 1MHz

Through Hole

TO-247-2

TO-247-2L

-55°C ~ 175°C

1N6910UTK2

Microchip Technology

DIODE SCHOTTKY 15V 25A THINKEY2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.2 mA @ 15 V
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

15 V

25A

520 mV @ 25 A

No Recovery Time > 500mA (Io)

-

1.2 mA @ 15 V

2000pF @ 5V, 1MHz

Surface Mount

ThinKey™2

-65°C ~ 150°C

STTH2004SW

STMicroelectronics

RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

SS14HL-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 1A SOD323HL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323HL
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

재고12,843

40 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

45pF @ 4V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323HL

-55°C ~ 125°C

RFUH20NS4STL

Rohm Semiconductor

DIODE GEN PURP 430V 20A LPDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 430 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C

패키지: -

재고2,832

430 V

20A

1.7 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

10 µA @ 430 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

LPDS

150°C

R714X

Microchip Technology

RECTIFIER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 1 mA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

400 V

15A

1.4 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

1 mA @ 400 V

-

Through Hole

TO-204AA, TO-3

TO-204AA (TO-3)

-65°C ~ 150°C