페이지 122 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DL4005-13	Diodes Incorporated	DIODE GEN PURP 600V 1A MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-213AB, MELF	재고7,280	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-55°C ~ 150°C
VS-100BGQ100HF4	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 100A POWERTAB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 630mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.4mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: PowerTab? Supplier Device Package: PowerTab? Operating Temperature - Junction: -55°C ~ 150°C	패키지: PowerTab?	재고2,464	30V	100A	630mV @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.4mA @ 30V	-	Through Hole	PowerTab?	PowerTab?	-55°C ~ 150°C
SRA8150 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C	패키지: TO-220-2	재고5,440	150V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
BYV29F-400-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-220-2 Full Pack, Isolated Tab	재고7,840	400V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-40°C ~ 150°C
SS3P4LHM3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 470mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고6,400	40V	3A	470mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 40V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
AP01C	Sanken	DIODE GEN PURP 1KV 200MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고4,512	1000V	200mA	4V @ 200mA	Small Signal =< 200mA (Io), Any Speed	200ns	100µA @ 1000V	-	Through Hole	Axial	-	-40°C ~ 150°C
SBE001-TL-W	ON Semiconductor	DIODE SCHOTTKY 30V 2A 6CPH Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 100µA @ 15V Capacitance @ Vr, F: 70pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-CPH Operating Temperature - Junction: -55°C ~ 125°C	패키지: SC-74, SOT-457	재고5,024	30V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	100µA @ 15V	70pF @ 10V, 1MHz	Surface Mount	SC-74, SOT-457	6-CPH	-55°C ~ 125°C
HS1JL RTG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 600V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고7,008	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1KLHRUG	TSC America Inc.	DIODE, 1A, 800V, AEC-Q101, SUB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-219AB	재고6,928	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
RL255GP-TP	Micro Commercial Co	DIODE GEN PURP 2.5A 600V R3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-3, Axial Supplier Device Package: R-3 Operating Temperature - Junction: -55°C ~ 150°C	패키지: R-3, Axial	재고3,792	600V	2.5A	1.1V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	40pF @ 4V, 1MHz	Through Hole	R-3, Axial	R-3	-55°C ~ 150°C
SK34B R5G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AA, SMB	재고3,248	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
UF5407-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 36pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고7,568	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	36pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
NXPLQSC10650Q	WeEn Semiconductors	DIODE SCHOTTKY 650V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 230µA @ 650V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고46,644	650V	10A	1.85V @ 10A	No Recovery Time > 500mA (Io)	0ns	230µA @ 650V	250pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
VS-T40HF60	Vishay Semiconductor Diodes Division	DIODE MODULE 600V 40A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	패키지: D-55 T-Module	재고17,910	600V	40A	-	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 600V	-	Chassis Mount	D-55 T-Module	D-55	-
S5X	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 1800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	Request a Quote	1800 V	8A	1.1 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1800 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 150°C
1N6911UTK2CS	Microchip Technology	DIODE SCHOTTKY 30V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 30 V Capacitance @ Vr, F: 1250pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	30 V	25A	540 mV @ 25 A	No Recovery Time > 500mA (Io)	-	1.2 mA @ 30 V	1250pF @ 5V, 1MHz	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 150°C
MURS3060F-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	5 µA @ 600 V	200pF @ 4V, 1MHz	Through Hole	TO-220-2 Isolated Tab	ITO-220AC	-55°C ~ 175°C
S2GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,000	400 V	2A	1.15 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	1 µA @ 400 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JR3	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	1 µA @ 600 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S34160	Microchip Technology	DIODE GEN PURP 1.6KV DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	1600 V	45A	1.15 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
S3JAL	Taiwan Semiconductor Corporation	3A, 600V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 14pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고83,400	600 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	14pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
S50460TS	Microchip Technology	DIODE GP 600V 300A DO205AB DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	600 V	300A	1.25 V @ 1000 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 600 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C
RFC02MM2STFTR	Rohm Semiconductor	DIODE GEN PURP 200V 500MA PMDU Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: -	재고18,000	200 V	500mA	950 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
SF17G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 500 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	500 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 500 V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
JANTX1N6942UTK3AS	Microchip Technology	DIODE SCHOTTKY 45V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 45 V Capacitance @ Vr, F: 7000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	45 V	150A	460 mV @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 45 V	7000pF @ 5V, 1MHz	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 150°C
BAT46WS	Diotec Semiconductor	DIODE SCHOTTKY 100V 150MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 10pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고12,240	100 V	150mA	450 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	6 ns	5 µA @ 75 V	10pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	-55°C ~ 150°C
DPG30IM400PC-TUB	IXYS	DIODE GEN PURP 400V 30A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 32pF @ 200V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	400 V	30A	1.43 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	1 µA @ 400 V	32pF @ 200V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)	-55°C ~ 175°C
1S2076TA-E	Renesas Electronics Corporation	DIODE FOR HIGH SPEED SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

DL4005-13

Diodes Incorporated

DIODE GEN PURP 600V 1A MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-213AB, MELF

재고7,280

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

MELF

-55°C ~ 150°C

VS-100BGQ100HF4

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 100A POWERTAB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.4mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: PowerTab?
Supplier Device Package: PowerTab?
Operating Temperature - Junction: -55°C ~ 150°C

패키지: PowerTab?

재고2,464

30V

100A

630mV @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

-

2.4mA @ 30V

-

Through Hole

PowerTab?

-55°C ~ 150°C

SRA8150 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C

패키지: TO-220-2

재고5,440

150V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 125°C

BYV29F-400-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-2 Full Pack, Isolated Tab

재고7,840

400V

8A

1.25V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-40°C ~ 150°C

SS3P4LHM3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고6,400

40V

3A

470mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 40V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

AP01C

Sanken

DIODE GEN PURP 1KV 200MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고4,512

1000V

200mA

4V @ 200mA

Small Signal =< 200mA (Io), Any Speed

200ns

100µA @ 1000V

-

Through Hole

Axial

-

-40°C ~ 150°C

SBE001-TL-W

ON Semiconductor

DIODE SCHOTTKY 30V 2A 6CPH

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 100µA @ 15V
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-CPH
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SC-74, SOT-457

재고5,024

30V

2A

550mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

100µA @ 15V

70pF @ 10V, 1MHz

Surface Mount

SC-74, SOT-457

6-CPH

-55°C ~ 125°C

HS1JL RTG

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고7,008

600V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 600V

15pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

S1KLHRUG

TSC America Inc.

DIODE, 1A, 800V, AEC-Q101, SUB S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-219AB

재고6,928

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 800V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

RL255GP-TP

Micro Commercial Co

DIODE GEN PURP 2.5A 600V R3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-3, Axial
Supplier Device Package: R-3
Operating Temperature - Junction: -55°C ~ 150°C

패키지: R-3, Axial

재고3,792

600V

2.5A

1.1V @ 2.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

40pF @ 4V, 1MHz

Through Hole

R-3, Axial

R-3

-55°C ~ 150°C

SK34B R5G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AA, SMB

재고3,248

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

UF5407-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고7,568

800V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 800V

36pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

NXPLQSC10650Q

WeEn Semiconductors

DIODE SCHOTTKY 650V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 230µA @ 650V
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고46,644

650V

10A

1.85V @ 10A

No Recovery Time > 500mA (Io)

0ns

230µA @ 650V

250pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

175°C (Max)

VS-T40HF60

Vishay Semiconductor Diodes Division

DIODE MODULE 600V 40A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

패키지: D-55 T-Module

재고17,910

600V

40A

-

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 600V

-

Chassis Mount

D-55 T-Module

D-55

-

S5X

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

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1800 V

8A

1.1 V @ 5 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 1800 V

-

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-50°C ~ 150°C

1N6911UTK2CS

Microchip Technology

DIODE SCHOTTKY 30V 25A THINKEY2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 25 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.2 mA @ 30 V
Capacitance @ Vr, F: 1250pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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30 V

25A

540 mV @ 25 A

No Recovery Time > 500mA (Io)

-

1.2 mA @ 30 V

1250pF @ 5V, 1MHz

Surface Mount

ThinKey™2

-65°C ~ 150°C

MURS3060F-BP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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600 V

30A

2 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

5 µA @ 600 V

200pF @ 4V, 1MHz

Through Hole

TO-220-2 Isolated Tab

ITO-220AC

-55°C ~ 175°C

S2GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고18,000

400 V

2A

1.15 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

1 µA @ 400 V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

S1JR3

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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600 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

1 µA @ 600 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

S34160

Microchip Technology

DIODE GEN PURP 1.6KV DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 45A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

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1600 V

45A

1.15 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1600 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 200°C

S3JAL

Taiwan Semiconductor Corporation

3A, 600V, STANDARD RECOVERY RECT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고83,400

600 V

3A

1.1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 600 V

14pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

Thin SMA

-55°C ~ 150°C

S50460TS

Microchip Technology

DIODE GP 600V 300A DO205AB DO9

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

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600 V

300A

1.25 V @ 1000 A

Standard Recovery >500ns, > 200mA (Io)

-

75 µA @ 600 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-205AB (DO-9)

-65°C ~ 200°C

RFC02MM2STFTR

Rohm Semiconductor

DIODE GEN PURP 200V 500MA PMDU

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고18,000

200 V

500mA

950 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 200 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

SF17G

Taiwan Semiconductor Corporation

DIODE GEN PURP 500V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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500 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 500 V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

JANTX1N6942UTK3AS

Microchip Technology

DIODE SCHOTTKY 45V 150A THINKEY3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Capacitance @ Vr, F: 7000pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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45 V

150A

460 mV @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 45 V

7000pF @ 5V, 1MHz

Surface Mount

ThinKey™3

-65°C ~ 150°C

BAT46WS

Diotec Semiconductor

DIODE SCHOTTKY 100V 150MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고12,240

100 V

150mA

450 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

6 ns

5 µA @ 75 V

10pF @ 0V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323F

-55°C ~ 150°C

DPG30IM400PC-TUB

IXYS

DIODE GEN PURP 400V 30A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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400 V

30A

1.43 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

1 µA @ 400 V

32pF @ 200V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263 (D2PAK)

-55°C ~ 175°C

1S2076TA-E

Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-