페이지 135 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 단일

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부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
BAS5202VE6127XT
Infineon Technologies

DIODE SCHOTTKY 45V 750MA SC79-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 750mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 45V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
  • Operating Temperature - Junction: 150°C (Max)
패키지: SC-79, SOD-523
재고5,072
45V
750mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 45V
10pF @ 10V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
SB560-B
Diodes Incorporated

DIODE SCHOTTKY 60V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 670mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-201AD, Axial
재고3,488
60V
5A
670mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
D4020L52
Littelfuse Inc.

DIODE GEN PURP 400V 12.7A TO220

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 12.7A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 12.7A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4µs
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Isolated Tab, Formed Leads
  • Supplier Device Package: TO-220 Isolated Tab
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: TO-220-3 Isolated Tab, Formed Leads
재고4,320
400V
12.7A
1.6V @ 12.7A
Standard Recovery >500ns, > 200mA (Io)
4µs
10µA @ 400V
-
Through Hole
TO-220-3 Isolated Tab, Formed Leads
TO-220 Isolated Tab
-40°C ~ 125°C
MBRB1045TRR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,192
45V
10A
840mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 150°C
HFA06PB120
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 6A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-247-2
재고5,056
1200V
6A
3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
5µA @ 1200V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 150°C
VS-72HF60
Vishay Semiconductor Diodes Division

DIODE STD REC ISO LEAD 70A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 180°C
패키지: DO-203AB, DO-5, Stud
재고4,544
600V
70A
1.35V @ 220A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 180°C
1N3212
GeneSiC Semiconductor

DIODE GEN PURP 400V 15A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-203AB, DO-5, Stud
재고3,344
400V
15A
1.5V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 175°C
GP2D010A065A
Global Power Technologies Group

SIC SCHOTTKY RECTIFIER

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 30A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 650V
  • Capacitance @ Vr, F: 527pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고3,376
650V
30A (DC)
1.65V @ 10A
No Recovery Time > 500mA (Io)
-
100µA @ 650V
527pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
MBRB1660HE3_A/P
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 16A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,880
60V
16A
750mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
hot RHRP860_F102
Fairchild/ON Semiconductor

400V -600V 8A HYPERFAST DIODES

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고5,776
600V
8A
2.1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
100µA @ 600V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
LSM190JE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 1A 90V SMAJ

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
재고3,552
-
-
-
-
-
-
-
-
-
-
-
ES3FHE3_A/H
Vishay Semiconductor Diodes Division

DIODE UFAST 300V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AB, SMC
재고2,448
300V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
6A40GHR0G
TSC America Inc.

DIODE, 6A, 400V, AEC-Q101, R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: R6, Axial
재고3,072
400V
6A
1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
hot SS1F4HM3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO219AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 40V
  • Capacitance @ Vr, F: 85pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: 175°C (Max)
패키지: DO-219AB
재고183,840
40V
1A
520mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 40V
85pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
175°C (Max)
TSPB5H150S S1G
TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 5A, 150

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: SMPC4.0
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-277, 3-PowerDFN
재고2,464
150V
5A
840mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
hot 1N5820RLG
ON Semiconductor

DIODE SCHOTTKY 20V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: DO-201AA, DO-27, Axial
재고180,000
20V
3A
475mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 20V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 125°C
BAT754,215
Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
  • Operating Temperature - Junction: 125°C (Max)
패키지: TO-236-3, SC-59, SOT-23-3
재고27,546
30V
200mA (DC)
600mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
125°C (Max)
JANTX1N3168
Microchip Technology

DIODE GP 400V 300A DO205AB DO9

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB (DO-9)
  • Operating Temperature - Junction: -65°C ~ 200°C
패키지: -
Request a Quote
400 V
300A
1.55 V @ 940 A
Standard Recovery >500ns, > 200mA (Io)
-
10 mA @ 400 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-205AB (DO-9)
-65°C ~ 200°C
ES1GALH
Taiwan Semiconductor Corporation

35NS, 1A, 400V, SUPER FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: Thin SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
400 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 400 V
16pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
Thin SMA
-55°C ~ 150°C
S2VH
Taiwan Semiconductor Corporation

2A, 1400V, STANDARD RECOVERY REC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 1400 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고17,250
1400 V
2A
1.15 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
1 µA @ 1400 V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RS1BWF-HF
Comchip Technology

DIODE GEN PURP 100V 1A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
100 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 100 V
15pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 150°C
CRS20I40A-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 2A S-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 µA @ 40 V
  • Capacitance @ Vr, F: 35pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고3,465
40 V
2A
600 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
60 µA @ 40 V
35pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
MSQ1PGHM3-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 1A MICROSMP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 650 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: MicroSMP
  • Supplier Device Package: MicroSMP (DO-219AD)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
400 V
1A
1.2 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
650 ns
1 µA @ 400 V
4pF @ 4V, 1MHz
Surface Mount
MicroSMP
MicroSMP (DO-219AD)
-55°C ~ 175°C
1N3910A
Microchip Technology

FAST RECOVERY RECTIFIER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 15 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 150°C
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100 V
50A
1.4 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
15 µA @ 100 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 150°C
DL4935-13-F
Diodes Incorporated

DIODE GEN PURP 200V 1A MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
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200 V
1A
1.2 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
5 µA @ 200 V
15pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
MELF
-65°C ~ 150°C
ER3KB-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
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800 V
3A
1.7 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 800 V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
UF1D-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -50°C ~ 150°C
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200 V
1A
1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 200 V
17pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-50°C ~ 150°C
JANTXV1N6874UTK2
Microchip Technology

DIODE GEN PURP 400MA THINKEY2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -65°C ~ 175°C
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-
400mA
1 V @ 400 mA
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Surface Mount
ThinKey™2
ThinKey™2
-65°C ~ 175°C